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Infineon Technologies IRFS4410TRLPBF
- Part No.:
- IRFS4410TRLPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRFS4410TRLPBF.pdf
- Description:
- MOSFET N-CH 100V 88A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:4,104
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Product details
Overview
IRFS4410TRLPBF from Infineon Technologies (formerly International Rectifier) is a 100V, 88A N-channel enhancement-mode HEXFET Power MOSFET in D2Pak (TO-263) package, optimized for high-frequency hard-switched SMPS and synchronous rectification with 8.0 mΩ typical RDS(on), 120 nC total gate charge, and enhanced body diode dV/dt/dI/dt ruggedness. It delivers stable performance in UPS and telecom power stages operating at ≤500 kHz.
For engineers reviewing the IRFS4410TRLPBF datasheet, IRFS4410TRLPBF pinout, IRFS4410TRLPBF application, or IRFS4410TRLPBF equivalent, key selection criteria include its 100V VBRDSS, 8.0–10 mΩ on-resistance at 10V VGS, 38–56 ns reverse recovery time, 300 mJ single-pulse avalanche energy, and D2Pak thermal resistance of 0.61°C/W junction-to-case.
Technical Context
This MOSFET employs planar silicon-gate HEXFET architecture with fully characterized SOA and avalanche capability. Its dynamic parameters-Qgd = 44 nC, Coss(ER) = 420 pF, and tr/tf = 80/50 ns-are specified at VDD = 65V, ID = 58A, and RG = 4.1Ω, enabling precise loss modeling in high-efficiency converters.
The integrated body diode exhibits VSD ≤ 1.3 V at 58A and trr = 38 ns (TJ = 25°C), supporting fast-recovery operation in synchronous buck topologies. Avalanche robustness is validated per unclamped inductive switching test (IAS = 58A, EAS = 300 mJ, L = 0.14 mH).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBRDSS | 100 V - Maximum blocking voltage before avalanche onset; defines safe DC bus margin in 48V–72V systems. |
| RDS(on) max | 10 mΩ - Limits conduction loss to ≤0.77 W at 88A; enables compact heatsink design in high-current outputs. |
| Qg typ | 120 nC - Determines gate drive power requirement; requires ≥1.2 A peak drive current for 100 ns switching transitions. |
| trr max | 56 ns - Sets minimum dead-time in synchronous rectifiers to avoid shoot-through during diode commutation. |
| EAS | 300 mJ - Supports single-event surge tolerance without failure under unclamped inductive load conditions. |
| RθJC | 0.61 °C/W - Enables 88A continuous operation with case temperature ≤100°C using standard greased heatsink interface. |
| ID @ TC = 100°C | 63 A - Thermal-limited current rating reflecting real-world PCB-mount derating in enclosed enclosures. |
Pinout & Package
D2Pak (TO-263) surface-mount package with isolated tab (drain-connected); thermally optimized for low-inductance PCB layout and forced-air or heatsink cooling.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Tab (exposed pad) | Drain (D) | Primary heat path and high-current return node; must be soldered to large copper pour for thermal and EMI control. |
| Lead 1 | Source (S) | Low-side reference for gate drive; connects to power ground plane with minimal loop area to suppress ringing. |
| Lead 2 | Gate (G) | High-impedance control input; requires series resistor (4.1Ω typical) to damp oscillation and limit dV/dt-induced turn-on. |
| Lead 3 | Source (S) | Redundant source connection for current sharing and reduced bond-wire inductance in high-di/dt applications. |
Key Features
| Feature | Design Value |
|---|---|
| Enhanced body diode dV/dt capability | Rated for >1.3 V/ns diode recovery dv/dt without parasitic turn-on; eliminates need for external snubbers in high-dV/dt SMPS. |
| Thermally limited avalanche SOA | Validated 300 mJ single-pulse EAS at TJ = 25°C; supports reliable operation under transient overloads without derating. |
| Low Coss(ER) = 420 pF | Reduces switching loss during hard-switched turn-off by minimizing stored output capacitance energy (E = ½·C·V²). |
| Characterized Crss = 190 pF | Enables accurate Miller-effect prediction for gate drive sizing and layout optimization in high-frequency converters. |
| Lead-free (RoHS-compliant) | Meets IPC/JEDEC J-STD-020 reflow profile; qualified for 260°C peak temperature with no voiding or delamination risk. |
Applications
| Server VRM Output Stage | Telecom 48V DC-DC Converter |
|---|---|
|
Use Scenario: High-current, high-efficiency buck converter delivering 12V/100A to CPU/GPU cores in datacenter servers. IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET in low-side position, switching at 300–500 kHz with precise dead-time control. Use Value: 8.0 mΩ RDS(on) reduces conduction loss by 35% vs. legacy 12 mΩ devices, lowering thermal stress on 6-layer PCBs. |
Use Scenario: Isolated forward or LLC resonant converter in 48V telecom power supply feeding base station RF modules. IC Role / Device Role / Timing Role: Primary-side switch handling 100V bus transients and repetitive avalanche events during line surges. Use Value: 300 mJ EAS and 58A IAR enable direct replacement of older 100V MOSFETs without external clamping circuits. |
| Uninterruptible Power Supply (UPS) | Industrial Motor Drive Inverter |
|
Use Scenario: Bidirectional DC-link switch in online double-conversion UPS managing battery charging and AC inversion. IC Role / Device Role / Timing Role: Hard-switched power switch operating in both forward and reverse conduction modes via body diode. Use Value: 1.3 V VSD and 38 ns trr minimize reverse conduction loss and reduce thermal runaway risk during battery discharge cycles. |
Use Scenario: Half-bridge leg in 3-phase inverter driving 1–5 kW PMSM motors in CNC and packaging equipment. IC Role / Device Role / Timing Role: High-side and low-side switching element with simultaneous dV/dt and dI/dt stress during PWM commutation. Use Value: Enhanced dV/dt ruggedness (>1.3 V/ns) prevents false turn-on during 100V/µs bus transients, eliminating gate driver protection complexity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-current 100V power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL110N10F7 | 100V, 110A, RDS(on) = 6.5 mΩ typ, but Qg = 145 nC and trr = 65 ns - higher gate drive loss and slower diode recovery. | Preferred in lower-frequency (<200 kHz), ultra-low-RDS(on) designs where gate drive power is less critical than conduction loss. | Select when system prioritizes <10 mΩ on-resistance over fast switching; verify gate driver can supply 1.45 A peak for 100 ns transitions. |
| IXFH110N10L2 | 100V, 110A, RDS(on) = 7.2 mΩ, Qg = 115 nC, but EAS = 220 mJ and trr = 45 ns - lower avalanche margin, slightly faster diode. | Suitable for soft-switched or ZVS topologies where avalanche stress is minimal but diode speed matters more. | Choose for resonant LLC or phase-shifted full-bridge where unclamped inductive stress is absent and trr < 45 ns is required. |
Compared with STL110N10F7 and IXFH110N10L2, IRFS4410TRLPBF offers balanced trade-offs: best-in-class avalanche energy (300 mJ), moderate Qg (120 nC), and proven dV/dt immunity - making it optimal for hard-switched industrial SMPS where reliability under transient overload is non-negotiable.
Availability
IRFS4410TRLPBF is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC converters, and uninterruptible power supplies requiring stable component supply across multi-year production cycles.
Supply support for IRFS4410TRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with core expertise in silicon-based power devices since acquiring International Rectifier in 2015.
The IRFS4410TRLPBF belongs to the HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in industrial and telecom power conversion systems demanding rugged avalanche behavior and stable parametric performance over temperature.
FAQ
What is the maximum continuous drain current for IRFS4410TRLPBF at 100°C case temperature?
The datasheet specifies ID @ TC = 100°C as 63 A with VGS = 10 V. This rating reflects thermal derating due to junction-to-case thermal resistance (0.61°C/W) and maximum allowable TJ = 175°C. At TC = 100°C, the device sustains 63 A continuously without exceeding TJmax, assuming proper heatsinking and ambient conditions.
Does IRFS4410TRLPBF support gate drive voltages below 10 V?
Yes - VGS(th) is specified from 2.0 V to 4.0 V, and RDS(on) remains usable down to VGS = 6 V (though increased to ~15 mΩ). However, full-rated 88 A current and 8.0 mΩ on-resistance require VGS ≥ 10 V. For logic-level drive, use with gate drivers capable of 10–15 V output is recommended to ensure low conduction loss and fast switching.
Can IRFS4410TRLPBF be used in parallel configurations?
Yes - its positive RDS(on) temperature coefficient (RDS(on) increases with TJ) enables inherent current sharing. The datasheet confirms stable parallel operation up to 4 devices with matched gate drive and symmetrical PCB layout. Critical requirements include identical gate resistor values (≤4.1 Ω), minimized source inductance imbalance, and shared thermal mass.
Is the D2Pak package of IRFS4410TRLPBF compatible with TO-220 footprint layouts?
No - D2Pak (TO-263) has different lead pitch (2.54 mm vs. 2.54 mm for TO-220 but wider body and exposed tab geometry), larger thermal pad, and distinct solder stencil requirements. Mechanical interference and thermal performance will be compromised if substituted into a TO-220 layout. Use only with verified D2Pak land patterns per IR Application Note AN-994.
IRFS4410TRLPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 88A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 10mOhm @ 58A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs:
- 180 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5150 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 200W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO263-3
IRFS4410TRLPBF FAQ
1.How can I place an order for IRFS4410TRLPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFS4410TRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFS4410TRLPBF reliable?
The price and inventory of IRFS4410TRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFS4410TRLPBF is usually 5 days.
3.What payment methods are accepted for IRFS4410TRLPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFS4410TRLPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFS4410TRLPBF?
IRFS4410TRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFS4410TRLPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFS4410TRLPBF?
For technical support, including IRFS4410TRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFS4410TRLPBF requirements.
6.How does Aetrix verify that IRFS4410TRLPBF is sourced from the original manufacturer or authorized distributors?
All IRFS4410TRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFS4410TRLPBF meets industry standards.
7.What is the process for return or replacement of IRFS4410TRLPBF?
All IRFS4410TRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFS4410TRLPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFS4410TRLPBF part is unused and in its original packaging.
Return procedure for IRFS4410TRLPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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