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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFS4410ZPBF

Name: IRFS4410ZPBF
Brand: Infineon Technologies
SKU: IRFS4410ZPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFS4410ZPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRFS4410ZPBF.pdf

Description:: MOSFET N-CH 100V 97A D2PAK

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Product details

Overview

IRFS4410ZPBF from Infineon Technologies (formerly International Rectifier) is a 100V, 97A D2PAK-packaged N-channel HEXFET Power MOSFET optimized for high-frequency hard-switching and synchronous rectification in SMPS. It features 7.2 mΩ typical R_DS(on), 83 nC total gate charge, and enhanced body diode dV/dt and dI/dt capability-enabling robust operation in UPS and telecom power stages.

For engineers reviewing the IRFS4410ZPBF datasheet, IRFS4410ZPBF pinout, IRFS4410ZPBF application, or IRFS4410ZPBF equivalent, key selection criteria include its 100V V_DSS, low 0.65°C/W R_θJC, 390A pulsed drain rating, and validated avalanche energy of 230 mJ-critical for unclamped inductive switching reliability.

Technical Context

This MOSFET employs planar silicon-gate technology with optimized cell layout to achieve high current density and reduced Miller capacitance (C_rss = 170 pF). Its body diode exhibits 38–57 ns reverse recovery time (t_rr) and 53–80 nC Q_rr at 58A/85V, supporting efficient synchronous rectification without external Schottky replacement.

The device is characterized for linear SOA operation up to 100°C case temperature and supports repetitive avalanche stress up to 100 mJ per pulse under defined conditions (I_AS = 58A, L = 0.143 mH, R_G = 25 Ω), with thermal resistance R_θJA = 40°C/W on PCB mount.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Maximum blocking voltage before avalanche onset; enables use in 48V–72V bus systems with margin.
R_DS(on) typ.	7.2 mΩ @ V_GS = 10 V - Low conduction loss yielding ≤0.5 W dissipation at 97A DC, critical for high-efficiency SMPS output stages.
Q_g	83 nC - Total gate charge determines driver strength requirement; compatible with standard 1A peak gate drivers at ≤500 kHz switching.
t_r/t_f	52 ns / 57 ns - Fast switching transitions minimize overlap loss in hard-switched topologies like LLC resonant converters.
C_oss eff. (TR)	690 pF - Time-related effective output capacitance defines turn-off delay and snubber design in high-dV/dt applications.
E_AS	230 mJ - Single-pulse avalanche energy rating validates ruggedness against inductive kickback in motor drives and UPS hold-up circuits.
V_SD	1.3 V - Body diode forward voltage at 58A; lower than standard silicon diodes, reducing conduction loss in bidirectional current paths.

Pinout & Package

D2PAK (TO-263AB) surface-mount package with exposed drain pad for thermal enhancement; requires minimum 1"² FR-4 copper area for rated 40°C/W R_θJA.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Low-side reference node; connects to power ground or synchronous rectifier return path.
Pin 2 (Gate)	Control input (G)	High-impedance MOS gate requiring <2.7 Ω series resistance to damp ringing during fast edge transitions.
Pin 3 (Drain)	Power output (D)	Exposed metal tab connected internally to drain; must be electrically isolated and thermally coupled to heatsink.

Key Features

Feature	Design Value
Enhanced body diode dV/dt capability	Rated for >1.5 V/ns recovery dv/dt without parasitic turn-on-enables reliable operation in high-speed synchronous rectifiers.
Improved gate ruggedness	±20 V gate-to-source rating with 100 nA IGSS leakage-tolerates transient overvoltage and ESD events in industrial environments.
Lead-free, halogen-free construction	RoHS-compliant D2PAK package with matte tin plating-meets IPC-J-STD-020 moisture sensitivity level 3 (MSL3).
Thermally optimized SOA	Linear Safe Operating Area extends to 100°C case temperature at 97A-supports continuous conduction mode in high-power DC-DC converters.

Applications

Telecom Rectifier Modules

Uninterruptible Power Supplies (UPS)

Use Scenario: High-density 48V input, 12V output synchronous buck converter delivering 200W+ with >95% efficiency.

IC Role / Device Role / Timing Role: Primary-side high-side switch and secondary-side synchronous rectifier in dual-phase topology.

Use Value: 7.2 mΩ R_DS(on) reduces conduction loss by 35% vs. legacy 12 mΩ devices, enabling smaller heatsinks and higher power density.

Use Scenario: Battery backup inverter stage converting 48V DC to 230V AC using full-bridge topology with active clamp.

IC Role / Device Role / Timing Role: High-current switching element in H-bridge leg handling 97A peak load current.

Use Value: 390A pulsed drain rating and 230 mJ avalanche energy ensure survival during grid fault transients and battery surge events.

Server VRM Output Stages

Industrial Motor Drive Inverters

Use Scenario: Multiphase CPU/GPU voltage regulator delivering 300A+ at 0.8–1.2V with 1 MHz switching frequency.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in each phase leg, operating in continuous conduction mode.

Use Value: 38 ns t_rr and 53 nC Q_rr minimize body diode conduction loss and reduce EMI generation during dead-time transitions.

Use Scenario: 3-phase inverter driving 5 kW PMSM motor in HVAC compressors with field-oriented control.

IC Role / Device Role / Timing Role: IGBT replacement in 10–20 kHz PWM inverter legs for improved efficiency and thermal management.

Use Value: 0.65°C/W R_θJC allows direct mounting to aluminum heatsink without thermal interface material, simplifying mechanical design.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, 100V power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL110N10F7	100V, 110A, R_DS(on) = 6.5 mΩ, DFN8 5×6 mm package, no integrated Kelvin source.	Suitable for space-constrained board-level designs but lacks D2PAK's thermal mass for sustained 97A operation.	Select when PCB area is limited and peak current <80A; verify gate drive compatibility due to lower Q_g (65 nC).
IXFH110N10L2	100V, 110A, R_DS(on) = 6.2 mΩ, TO-247 package, higher C_iss (5200 pF) and Q_g (115 nC).	Better suited for lower-frequency (<200 kHz), high-voltage industrial inverters where gate drive strength is available.	Prefer for ruggedized TO-247 mounting in harsh environments; avoid in high-frequency SMPS due to elevated switching losses.

Compared with STL110N10F7 and IXFH110N10L2, IRFS4410ZPBF offers optimal balance of thermal performance (R_θJC = 0.65°C/W), moderate gate charge (83 nC), and proven avalanche ruggedness-making it the preferred choice for high-reliability 400–1000 kHz SMPS and UPS applications demanding both efficiency and robustness.

Availability

IRFS4410ZPBF is available at Aetrix Electronics and suitable for high-efficiency synchronous rectification in SMPS, uninterruptible power supplies, and high-speed power switching circuits requiring stable component supply and long-term lifecycle support.

Supply support for IRFS4410ZPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with deep expertise in silicon-based power devices.

This device belongs to Infineon's legacy HEXFET® Power MOSFET product line-designed specifically for high-current, high-voltage switching in server power supplies, telecom infrastructure, and industrial motor drives.

FAQ

What is the maximum continuous drain current for IRFS4410ZPBF at 100°C case temperature?

The maximum continuous drain current is 69 A at T_C = 100°C and V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This reflects silicon-limited current derating due to thermal constraints-not package-limited-and assumes adequate heatsinking to maintain case temperature.

Does IRFS4410ZPBF support gate drive voltages below 10 V?

Yes-its gate threshold voltage (V_GS(th)) ranges from 2.0 V to 4.0 V, enabling partial enhancement at 5 V. However, full conduction (R_DS(on) ≤ 9.0 mΩ) requires ≥10 V gate drive; operation at 5 V yields significantly higher on-resistance and is not recommended for high-current applications.

Can IRFS4410ZPBF replace IRFB4410ZPBF in existing TO-220 designs?

No-IRFS4410ZPBF uses D2PAK (TO-263) packaging while IRFB4410ZPBF uses TO-220AB. The footprint, thermal interface, and mounting method differ fundamentally. Direct replacement requires PCB redesign and requalification of thermal performance and mechanical stress.

Is the body diode in IRFS4410ZPBF suitable for reverse recovery in hard-switched ZVS circuits?

Yes-the body diode is characterized for dI/dt ≤ 610 A/μs and exhibits t_rr = 38–57 ns with Q_rr = 53–80 nC at 58A/85V. These parameters support use in zero-voltage-switching (ZVS) phases of LLC resonant converters, provided gate timing avoids cross-conduction during recovery.

IRFS4410ZPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 97A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 9mOhm @ 58A, 10V

Vgs(th) (Max) @ Id:: 4V @ 150µA

Gate Charge (Qg) (Max) @ Vgs:: 120 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4820 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 230W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRFS4410ZPBF FAQ

1.How can I place an order for IRFS4410ZPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFS4410ZPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFS4410ZPBF reliable?

The price and inventory of IRFS4410ZPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFS4410ZPBF is usually 5 days.

3.What payment methods are accepted for IRFS4410ZPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFS4410ZPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFS4410ZPBF?

IRFS4410ZPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFS4410ZPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFS4410ZPBF?

For technical support, including IRFS4410ZPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFS4410ZPBF requirements.

6.How does Aetrix verify that IRFS4410ZPBF is sourced from the original manufacturer or authorized distributors?

All IRFS4410ZPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFS4410ZPBF meets industry standards.

7.What is the process for return or replacement of IRFS4410ZPBF?

All IRFS4410ZPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFS4410ZPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFS4410ZPBF part is unused and in its original packaging.

Return procedure for IRFS4410ZPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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