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Infineon Technologies IRFS4510PBF
- Part No.:
- IRFS4510PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRFS4510PBF.pdf
- Description:
- MOSFET N-CH 100V 61A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:5,692
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Product details
Overview
IRFS4510PBF from Infineon Technologies is a 100V, 61A N-channel enhancement-mode HEXFET Power MOSFET in TO-262 (I²PAK) package, optimized for high-frequency hard-switched SMPS and synchronous rectification with 11.3mΩ typical RDS(on), 58nC total gate charge, and enhanced body diode dV/dt/dI/dt capability. It operates reliably up to 175°C junction temperature and delivers robust unclamped inductive switching performance.
For engineers reviewing the IRFS4510PBF datasheet, IRFS4510PBF pinout, IRFS4510PBF application, or IRFS4510PBF equivalent, key selection criteria include its 100V VDSS, low 13.9mΩ max RDS(on), 32ns rise time, 54–81ns reverse recovery time, and SOA-rated avalanche energy of 300mJ - critical for UPS, telecom DC/DC, and high-efficiency server power stages.
Technical Context
This MOSFET employs planar silicon process with optimized cell layout to achieve balanced conduction loss and switching speed. Its gate threshold voltage (2.0–4.0V) ensures stable turn-on under wide drive conditions, while the 0.6Ω internal gate resistance supports controlled dv/dt without external gate resistors in many designs.
The integrated body diode features low 1.3V forward voltage and fast 54–81ns trr at 37A/125°C, enabling efficient synchronous rectification. Avalanche ruggedness is thermally validated per Fig. 12 and AN-1005, supporting repetitive operation within defined pulse width and duty cycle limits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100V - Maximum blocking voltage before avalanche; defines safe operating range in 48V–60V bus applications. |
| RDS(on) typ. | 11.3mΩ @ VGS=10V, TJ=25°C - Enables <1W conduction loss at 30A, reducing heatsink requirements. |
| ID (cont.) | 61A @ TC=25°C - Silicon-limited current rating; derates to 43A at 100°C case temperature. |
| Qg typ. | 58nC - Determines gate drive power and switching transition time; enables ~32ns rise with 2.7Ω driver. |
| trr | 54–81ns @ IF=37A, TJ=25–125°C - Critical for minimizing dead-time losses in synchronous buck converters. |
| EAS | 300mJ - Single-pulse avalanche energy limit; supports reliable operation during inductive load transients. |
| RθJC | 1.05°C/W - Junction-to-case thermal resistance; enables direct mounting to heatsink for high-power density designs. |
Pinout & Package
IRFS4510PBF uses the TO-262 (I²PAK) surface-mount package with isolated tab, rated for 10lb·in (1.1N·m) mounting torque. The package provides low-inductance source connection and thermal path via the drain-connected tab.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main high-side current path and thermal interface | Electrically connected to drain; must be electrically isolated from heatsink unless circuit design permits common-drain topology. |
| Source | Reference node for gate drive and current sensing | Low-inductance Kelvin source pin enables accurate current monitoring and stable gate control. |
| Gate | Control terminal for channel modulation | High-impedance input requiring <58nC charge; sensitive to ESD; requires gate resistor for dv/dt control. |
Key Features
| Feature | Design Value |
|---|---|
| Enhanced avalanche ruggedness | 300mJ single-pulse EAS with validated thermal failure model - eliminates need for external snubbers in flyback/LLC primary switches. |
| Optimized body diode dV/dt immunity | Rated for >1000V/ns diode recovery dv/dt - prevents false turn-on in high-speed synchronous rectifiers. |
| Low Coss eff. (TR) | 325pF - reduces turn-off energy loss and improves zero-voltage switching margin in resonant topologies. |
| Lead-free (PbF) construction | RoHS-compliant finish with SnAgCu plating - meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1). |
| Characterized SOA curves | Full Safe Operating Area defined up to 100μs pulse width - enables confident design in hard-switched PFC and motor drives. |
Applications
| Server VRM Synchronous Rectifier | Telecom 48V DC/DC Converter |
|---|---|
Use Scenario: High-current, high-frequency buck converter delivering 50A+ at 1.2V for CPU/GPU core rails. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode; commutated at 500kHz–1MHz. Use Value: 11.3mΩ RDS(on) cuts conduction loss by >60% vs. 40V Schottky; 54ns trr minimizes shoot-through risk during dead-time. | Use Scenario: Isolated full-bridge DC/DC module converting -48V input to 12V/24V outputs in telecom shelf systems. IC Role / Device Role / Timing Role: Primary-side switch in hard-switched full-bridge topology operating at 100–200kHz. Use Value: 100V VDSS provides 2× safety margin over 48V nominal; 300mJ EAS withstands transformer leakage inductance spikes. |
| Uninterruptible Power Supply (UPS) | Industrial Motor Drive Inverter |
Use Scenario: Bidirectional DC link switch in online double-conversion UPS handling 3kVA loads. IC Role / Device Role / Timing Role: High-side switch in half-bridge inverter stage; subjected to repeated unclamped inductive switching. Use Value: Validated avalanche capability supports reliable operation during battery-backup mode transitions without external clamping. | Use Scenario: 3-phase inverter driving 1–3HP AC induction motors in HVAC and pump controllers. IC Role / Device Role / Timing Role: Phase-leg switch in 6-pack configuration; operated at 8–16kHz PWM with regenerative braking. Use Value: 175°C max TJ and 1.05°C/W RθJC enable compact heatsinking in sealed enclosures; robust dI/dt rating handles motor stall currents. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP110N10F7 | 100V, 110A, 8.5mΩ RDS(on), 120nC Qg, TO-220FP package | Higher current rating but larger gate charge increases switching loss at >200kHz | Preferred for lower-frequency, higher-current industrial inverters where thermal mass compensates for slower switching. |
| IXTP110N10T | 100V, 110A, 9.0mΩ RDS(on), 75nC Qg, TO-220 package, no lead-free option | Higher peak current and slightly faster switching, but lacks PbF compliance and avalanche characterization | Suitable for legacy automotive or military designs requiring non-RoHS parts and extended temperature validation beyond 175°C. |
Compared with STP110N10F7 and IXTP110N10T, IRFS4510PBF offers superior high-frequency efficiency due to lower Qg/RDS(on) ratio and fully characterized avalanche behavior - making it optimal for space-constrained, high-switching-frequency SMPS where reliability under transient stress is critical.
Availability
IRFS4510PBF is available at Aetrix Electronics and suitable for high-efficiency synchronous rectification, uninterruptible power supply (UPS), and high-speed power switching applications requiring stable component supply and long-term industrial lifecycle support.
Supply support for IRFS4510PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.
IRFS4510PBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-reliability, high-efficiency power conversion in server, telecom, and industrial infrastructure where thermal robustness and switching consistency are mission-critical.
FAQ
Is IRFS4510PBF suitable for synchronous rectification in a 1MHz buck converter?
Yes. With 58nC total gate charge, 32ns rise time, and 54ns reverse recovery time at 37A/25°C, IRFS4510PBF supports efficient synchronous rectification up to 1MHz when paired with a low-impedance gate driver and proper PCB layout. Its low 11.3mΩ RDS(on) minimizes conduction loss at high DC currents.
What is the maximum allowable case temperature for continuous 61A operation?
The 61A rating is specified at TC = 25°C. At TC = 100°C, the continuous drain current derates to 43A per the Absolute Maximum Ratings table. Operation above 100°C case temperature requires active cooling or reduced current to maintain TJ ≤ 175°C.
Does IRFS4510PBF have a fully characterized Safe Operating Area (SOA) curve?
Yes. Figure 8 in the official datasheet provides the SOA curve across pulse widths from 10μs to DC, including thermal and RDS(on)-limited boundaries. The curve is validated for both linear and switching operation, with explicit limits for unclamped inductive switching per Figures 22a/22b.
Can IRFS4510PBF replace IRFSL4510PbF in a TO-262 footprint?
Yes - IRFS4510PBF and IRFSL4510PbF share identical TO-262 (I²PAK) mechanical dimensions, pinout, and thermal characteristics. Both are rated for 100V/61A and use the same silicon die; the only difference is packaging variant designation (standard vs. lead-free suffix), with no electrical or thermal performance variation.
IRFS4510PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 61A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 13.9mOhm @ 37A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:
- 87 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3180 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 140W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO263-3
IRFS4510PBF FAQ
1.How can I place an order for IRFS4510PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFS4510PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFS4510PBF reliable?
The price and inventory of IRFS4510PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFS4510PBF is usually 5 days.
3.What payment methods are accepted for IRFS4510PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFS4510PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFS4510PBF?
IRFS4510PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFS4510PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFS4510PBF?
For technical support, including IRFS4510PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFS4510PBF requirements.
6.How does Aetrix verify that IRFS4510PBF is sourced from the original manufacturer or authorized distributors?
All IRFS4510PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFS4510PBF meets industry standards.
7.What is the process for return or replacement of IRFS4510PBF?
All IRFS4510PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFS4510PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFS4510PBF part is unused and in its original packaging.
Return procedure for IRFS4510PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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