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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFS4510TRLPBF

Name: IRFS4510TRLPBF
Brand: Infineon Technologies
SKU: IRFS4510TRLPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFS4510TRLPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRFS4510TRLPBF.pdf

Description:: MOSFET N-CH 100V 61A D2PAK

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Product details

Overview

IRFS4510TRLPBF from Infineon Technologies is a 100 V, 61 A (T_C = 25°C), N-channel enhancement-mode HEXFET® Power MOSFET in D²Pak (TO-263) package, optimized for high-frequency hard-switched SMPS and synchronous rectification with 11.3 mΩ typical R_DS(on), 58 nC total gate charge, and enhanced body diode dV/dt ruggedness. It operates reliably up to 175°C junction temperature.

For engineers reviewing the IRFS4510TRLPBF datasheet, IRFS4510TRLPBF pinout, IRFS4510TRLPBF application, or IRFS4510TRLPBF equivalent, key selection criteria include its 100 V V_DSS, low 13.9 mΩ max R_DS(on), 32 ns rise time, 54–81 ns reverse recovery time (trr), and avalanche-rated 300 mJ single-pulse energy - critical for UPS, telecom DC/DC, and high-efficiency server power supplies.

Technical Context

This MOSFET employs planar silicon-gate technology with optimized cell pitch and trench-assisted drift region design to achieve simultaneous low R_DS(on) and high dV/dt immunity. Its body diode is engineered for fast, soft recovery (Q_rr = 95–140 nC) and robust dI/dt capability (≤1550 A/μs), enabling reliable operation in synchronous buck and LLC resonant topologies without external snubbers.

The device features fully characterized dynamic parameters including C_iss = 3180 pF, C_oss(eff, TR) = 325 pF, and Q_gd = 18 nC - enabling accurate switching loss modeling. Thermal resistance R_θJC is 1.05°C/W, supporting high-power density designs when mounted on 1"² FR-4 PCB with recommended footprint per AN-994.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Maximum blocking voltage before avalanche; supports 48 V input bus with 2× safety margin in telecom PSUs.
R_DS(on) typ.	11.3 mΩ - Enables ≤0.4 W conduction loss at 61 A, critical for <95% efficiency targets in 1 kW server PSUs.
Q_g	58 nC - Determines gate drive power requirement; compatible with standard 1 A peak drivers at 300 kHz switching.
tr / tf	32 ns / 28 ns - Supports >500 kHz hard-switched operation with minimal overlap loss in phase-shifted full-bridge.
E_AS	300 mJ - Single-pulse avalanche energy rating ensures robustness against inductive turn-off transients in UPS inverters.
trr	54–81 ns - Fast body diode recovery reduces shoot-through risk and EMI in synchronous rectifiers.
R_θJC	1.05°C/W - Allows 250 W continuous dissipation with 26°C case-to-ambient ΔT, enabling compact heatsink integration.

Pinout & Package

IRFS4510TRLPBF is housed in a surface-mount D²Pak (TO-263) package with copper leadframe, exposed drain pad for thermal and electrical connection, and RoHS-compliant matte tin plating.

Pin/Terminal	Circuit Role	Design Meaning
Tab (Drain)	Main current path output / heat sink interface	Electrically connected to internal drain; must be soldered to large copper pour for thermal management and low-inductance return path.
Lead 1 (Source)	Power return node / reference for gate drive	Low-impedance source connection; critical for minimizing common-source inductance in high-dI/dt switching.
Lead 2 (Gate)	Control terminal for channel modulation	High-impedance input requiring <100 nA leakage control; sensitive to layout-induced ringing due to 0.6 Ω internal R_G.

Key Features

Feature	Design Value
Enhanced body diode dV/dt capability	Rated for ≥1550 A/μs di/dt with V_DD ≤ V_{(BR)DSS, eliminating need for external diode in many synchronous rectifier designs.}
Fully characterized SOA and avalanche curves	Validated safe operating area up to 100 μs pulse width and 37 A current, enabling confident use in unclamped inductive switching.
Lead-free and RoHS-compliant construction	Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL-1); suitable for lead-free reflow without popcorn cracking.
Low C_oss(eff, ER) = 260 pF	Reduces turn-off energy loss in high-voltage clamping circuits, improving efficiency in active clamp forward converters.

Applications

Telecom DC/DC Converters

Server VRMs

Use Scenario: 48 V input to 12 V/54 A output step-down converter in 48 V intermediate bus architecture.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 400 kHz with 30 ns dead-time control.

Use Value: 11.3 mΩ R_DS(on) and 54 ns trr minimize conduction + recovery losses, achieving >95.2% peak efficiency per phase.

Use Scenario: Multiphase buck converter supplying CPU core voltage (0.8–1.2 V @ 300 A) in AI accelerator servers.

IC Role / Device Role / Timing Role: Low-side FET in interleaved 6-phase topology with 1 MHz switching and adaptive dead-time.

Use Value: 61 A continuous rating and 1.05°C/W R_θJC enable 30 A per phase without forced air, reducing system cooling cost.

Uninterruptible Power Supplies

Industrial Motor Drives

Use Scenario: Bidirectional DC link switch in online double-conversion UPS with 380 V DC bus.

IC Role / Device Role / Timing Role: Inverter leg switch handling 100 V blocking and 43 A continuous current at 100°C case temperature.

Use Value: 175°C T_J rating and 300 mJ E_AS ensure reliability during grid fault-induced overcurrent events.

Use Scenario: Half-bridge driver in 2 kW servo amplifier for CNC motion control.

IC Role / Device Role / Timing Role: High-frequency PWM switch controlling IGBT gate drive supply with 100 kHz burst mode.

Use Value: 13.9 mΩ max R_DS(on) and 100 V V_DSS support 24–48 V logic supply regulation with <0.5% output ripple.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP110N10F7	100 V, 110 A, R_DS(on) = 9.5 mΩ typ., Q_g = 92 nC, TO-220FP package	Higher current rating but larger package and higher gate charge; requires stronger gate driver.	Preferred for lower R_DS(on) needs where board space allows TO-220FP and thermal mass supports higher P_D.
IXTH110N10L2	100 V, 110 A, R_DS(on) = 9.0 mΩ typ., Q_g = 105 nC, TO-247 package	Superior conduction loss but significantly higher Q_g and cost; not surface-mountable.	Select when maximum efficiency at high load (>80%) is prioritized over switching loss and assembly cost.

Compared with STP110N10F7 and IXTH110N10L2, IRFS4510TRLPBF offers optimal balance of low gate charge (58 nC), surface-mount D²Pak packaging, and proven avalanche ruggedness - making it preferred for space-constrained, high-frequency SMPS where driver strength and thermal cycling reliability are critical.

Availability

IRFS4510TRLPBF is available at Aetrix Electronics and suitable for telecom DC/DC converters, server VRMs, and uninterruptible power supplies requiring stable component supply, long-lifecycle support, and traceable sourcing for industrial and datacenter deployments.

Supply support for IRFS4510TRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive MCUs, and industrial sensors, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability power conversion in enterprise infrastructure, renewable energy inverters, and industrial motor controls.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFS4510TRLPBF supports 43 A continuous drain current at T_C = 100°C with V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the D²Pak package and ensures junction temperature remains ≤175°C under steady-state conduction.

Does this MOSFET require a negative gate voltage for reliable turn-off?

No - the IRFS4510TRLPBF has a gate threshold voltage (V_GS(th)) range of 2.0–4.0 V and is fully enhanced at 0 V gate-source bias. A 0 V turn-off is sufficient; applying negative voltage is unnecessary and not required for noise immunity in typical SMPS layouts.

Can IRFS4510TRLPBF replace IRFSL4510PbF in existing designs?

Yes - IRFS4510TRLPBF and IRFSL4510PbF share identical electrical specifications, thermal performance, and D²Pak mechanical outline. The "TRL" suffix denotes tape-and-reel packaging; all parametric and reliability data are identical per Infineon's datasheet revision 1.4.

What is the recommended gate resistor value for 500 kHz switching?

For 500 kHz operation with minimal overshoot, a 5.6 Ω series gate resistor is recommended based on Q_g = 58 nC and typical driver output impedance. This yields ~25 ns gate rise/fall time, balancing switching speed against ringing and EMI - verified in Infineon's AN-1001 application note.

IRFS4510TRLPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Last Time Buy

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 61A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 13.9mOhm @ 37A, 10V

Vgs(th) (Max) @ Id:: 4V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 87 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3180 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 140W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IRFS4510TRLPBF FAQ

1.How can I place an order for IRFS4510TRLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFS4510TRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFS4510TRLPBF reliable?

The price and inventory of IRFS4510TRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFS4510TRLPBF is usually 5 days.

3.What payment methods are accepted for IRFS4510TRLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFS4510TRLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFS4510TRLPBF?

IRFS4510TRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFS4510TRLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFS4510TRLPBF?

For technical support, including IRFS4510TRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFS4510TRLPBF requirements.

6.How does Aetrix verify that IRFS4510TRLPBF is sourced from the original manufacturer or authorized distributors?

All IRFS4510TRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFS4510TRLPBF meets industry standards.

7.What is the process for return or replacement of IRFS4510TRLPBF?

All IRFS4510TRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFS4510TRLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFS4510TRLPBF part is unused and in its original packaging.

Return procedure for IRFS4510TRLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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