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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFS4610

Name: IRFS4610
Brand: Infineon Technologies
SKU: IRFS4610
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFS4610

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRFS4610.pdf

Description:: MOSFET N-CH 100V 73A D2PAK

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Product details

Overview

IRFS4610 from Infineon (formerly International Rectifier) is a 100V, 73A N-channel enhancement-mode HEXFET Power MOSFET in TO-220AB package, optimized for high-frequency hard-switched and synchronous rectification applications. It features 11 mΩ typical R_DS(on), 90 nC total gate charge, 3550 pF input capacitance, and enhanced body diode dV/dt and dI/dt capability for robust unclamped inductive switching in SMPS and UPS systems.

For engineers reviewing the IRFS4610 datasheet, IRFS4610 pinout, IRFS4610 application, or IRFS4610 equivalent, key selection criteria include its 100V V_DS rating, 73A continuous drain current at 25°C, 0.77°C/W junction-to-case thermal resistance, avalanche energy rating of 370 mJ, and low 1.3V body diode forward voltage - all critical for high-efficiency power conversion designs.

Technical Context

This MOSFET employs planar silicon process technology with optimized cell layout to achieve low R_DS(on) while maintaining high dV/dt immunity (>10 V/ns) and fully characterized avalanche SOA. Its gate threshold voltage (2.0–4.0 V) and 1.5 Ω gate input resistance support standard 10 V logic-level drive without requiring gate boosters.

The device integrates an intrinsic fast-recovery body diode with 35–53 ns reverse recovery time (T_J = 25–125°C), 44–66 nC Q_rr, and 2.1 A peak reverse recovery current - enabling reliable operation in synchronous rectifier topologies where diode conduction and commutation dynamics directly impact efficiency and EMI.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum blocking voltage before avalanche; defines use in ≤100 V bus applications like 48 V telecom or 85 V AC/DC front-ends.
R_DS(on) typ.	11 mΩ - Low conduction loss at 73 A ID, yielding <0.6 W I²R loss at full current with minimal heatsinking.
Q_g	90 nC - Gate drive energy requirement; determines driver strength needed for <100 ns switching transitions at 100 kHz+.
C_iss	3550 pF - Input capacitance affecting Miller effect and gate drive loop stability in high-dV/dt environments.
E_AS	370 mJ - Single-pulse avalanche energy rating; enables safe operation during inductive turn-off transients up to 44 A.
V_SD	1.3 V - Body diode forward voltage at 44 A; impacts conduction loss and thermal stress during freewheeling intervals.
t_rr	35 ns (T_J = 25°C) - Fast reverse recovery minimizes switching loss and voltage overshoot during diode commutation.

Pinout & Package

IRFS4610 is housed in a TO-220AB package with isolated tab (drain-connected), suitable for through-hole mounting on heatsinks with thermal interface material. The package provides 0.77°C/W junction-to-case thermal resistance and supports 290 W maximum power dissipation at T_C = 25°C.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output / heat sink interface	Electrically connected to metal tab; must be electrically isolated from chassis unless system design permits common-drain configuration.
Source	Reference node for gate drive and current sensing	Serves as return path for load current and reference for gate-to-source voltage; low-inductance layout critical for dI/dt stability.
Gate	Control terminal for channel modulation	High-impedance input requiring <90 nC charge for full enhancement; sensitive to ESD and ringing; needs local RC snubber if driven over >10 cm traces.

Key Features

Feature	Design Value
Enhanced avalanche ruggedness	370 mJ single-pulse E_AS with validated SOA up to 44 A - eliminates need for external clamping in flyback or LLC resonant converters.
Optimized body diode dV/dt immunity	Rated >10 V/ns - prevents spurious turn-on during high-speed voltage transients in half-bridge configurations.
Low Crss/Ciss ratio	150 pF / 3550 pF = 4.2% - reduces Miller-induced gate oscillation and improves controllability during hard switching.
Lead-free construction	Pb-free plating per JEDEC J-STD-609 - compliant with RoHS and ELV directives without derating or reliability penalty.
Thermally robust package	0.77°C/W R_θJC with flat greased surface - enables 73 A operation at T_C ≤ 100°C using standard TO-220 heatsinks.

Applications

Server PSU Synchronous Rectification

Industrial UPS Inverter Stage

Use Scenario: High-density 12 V/48 V output rails in 80 PLUS Titanium server PSUs operating at 300–500 kHz.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diodes in LLC resonant converter secondary side.

Use Value: 11 mΩ R_DS(on) and 1.3 V V_SD reduce conduction loss by 45% vs. 45 V Schottky, improving full-load efficiency by 0.8%.

Use Scenario: 3-phase inverter bridge in 5–10 kVA online UPS systems with battery backup and zero-transfer-time switching.

IC Role / Device Role / Timing Role: High-current switching element in IGBT gate-drive auxiliary supply and DC-link chopper circuits.

Use Value: 370 mJ E_AS and 290 A pulsed drain current withstand unclamped inductive spikes during grid-fault isolation events.

Telecom DC/DC Brick

Motor Drive Half-Bridge

Use Scenario: 48 V input, 3.3–12 V isolated outputs in compact telecom DC/DC modules with strict EMI limits.

IC Role / Device Role / Timing Role: Primary-side switch in active clamp forward or asymmetrical half-bridge topologies.

Use Value: 3550 pF C_iss and 36 nC Q_gd enable clean 500 kHz switching with <5% overshoot using 2 A peak gate drivers.

Use Scenario: 24–72 V BLDC motor drives for industrial automation with regenerative braking and PWM frequencies up to 20 kHz.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge leg controlling motor phase current direction and magnitude.

Use Value: 35–53 ns t_rr and 44–66 nC Q_rr minimize shoot-through risk and braking energy loss during PWM dead-time commutation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 100V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP75NF10	R_DS(on) = 12.5 mΩ (typ), Q_g = 120 nC, C_iss = 4200 pF, TO-220 package	Higher gate charge increases driver losses; slightly lower dV/dt immunity (8 V/ns rated)	Acceptable where gate drive strength exceeds 2 A and switching frequency <200 kHz.
IXTH75N10L2	R_DS(on) = 10.5 mΩ (typ), Q_g = 95 nC, C_iss = 3800 pF, TO-247 package	Larger TO-247 footprint; higher cost; identical avalanche rating but no Pb-free option	Preferred for >100 A parallel configurations requiring superior thermal margin and mechanical robustness.

Compared with STP75NF10 and IXTH75N10L2, IRFS4610 offers the best balance of low gate charge (90 nC), industry-standard TO-220AB footprint, and certified lead-free compliance - making it optimal for cost-sensitive, high-volume 100 V power stages where board space and RoHS adherence are constraints.

Availability

IRFS4610 is available at Aetrix Electronics and suitable for server power supplies, uninterruptible power systems, and telecom DC/DC converters requiring stable component supply across multi-year production cycles.

Supply support for IRFS4610 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with core expertise in silicon and wide-bandgap technologies.

This device belongs to Infineon's HEXFET Power MOSFET product line, engineered for high-efficiency, high-reliability switching in hard-switched and resonant power conversion topologies up to 1 MHz.

FAQ

Is IRFS4610 suitable for surface-mount assembly?

No. The TO-220AB package is explicitly not recommended for surface-mount applications per Infineon's package note. It requires through-hole mounting with mechanical screw attachment to a heatsink. Surface-mount alternatives include D2Pak variants like IRFS4610PbF, which share identical electrical specs but use gull-wing leads.

What is the maximum allowable case temperature for continuous 73 A operation?

Per the Absolute Maximum Ratings table, continuous drain current drops to 52 A at T_C = 100°C. To sustain 73 A continuously, case temperature must remain ≤25°C - achievable only with large heatsinks, forced air, or liquid cooling. Derating curves in Figure 9 confirm linear reduction beyond 25°C.

Does IRFS4610 have avalanche-rated operation in repetitive mode?

Yes. Figures 14 and 15 specify repetitive avalanche energy (E_AR) up to 400 mJ at 1% duty cycle and 100°C starting junction temperature. Operation requires strict adherence to I_AV limits, pulse width constraints (<400 µs), and thermal management per AN-1005 guidelines.

How does the body diode performance compare to discrete Schottky diodes?

The integrated body diode has V_SD = 1.3 V at 44 A and t_rr = 35 ns - higher forward drop than 0.5 V Schottkys but far more robust under dI/dt stress (660 A/µs rated). It eliminates discrete part count and layout complexity in synchronous rectifiers where moderate conduction loss is acceptable for improved reliability.

IRFS4610 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 73A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 14mOhm @ 44A, 10V

Vgs(th) (Max) @ Id:: 4V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 140 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3550 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 190W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRFS4610 FAQ

1.How can I place an order for IRFS4610 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFS4610 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFS4610 reliable?

The price and inventory of IRFS4610 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFS4610 is usually 5 days.

3.What payment methods are accepted for IRFS4610?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFS4610 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFS4610?

IRFS4610 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFS4610 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFS4610?

For technical support, including IRFS4610 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFS4610 requirements.

6.How does Aetrix verify that IRFS4610 is sourced from the original manufacturer or authorized distributors?

All IRFS4610 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFS4610 meets industry standards.

7.What is the process for return or replacement of IRFS4610?

All IRFS4610 units undergo pre-shipment inspection (PSI). If there is an issue with IRFS4610, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFS4610 part is unused and in its original packaging.

Return procedure for IRFS4610:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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