Infineon Technologies IRFS4610PBF

Overview

IRFS4610PBF from Infineon Technologies (formerly International Rectifier) is a 100 V, 73 A N-channel enhancement-mode HEXFET Power MOSFET in TO-220AB package, optimized for high-frequency hard-switched SMPS and synchronous rectification with 11 mΩ typical R_DS(on), 90 nC total gate charge, and enhanced avalanche ruggedness. It serves as the primary power switch in UPS output stages and DC-DC converters operating up to 500 kHz.

For engineers reviewing the IRFS4610PBF datasheet, IRFS4610PBF pinout, IRFS4610PBF application, or IRFS4610PBF equivalent, key selection criteria include its 100 V V_DSS, 73 A continuous drain rating at 25°C, 0.77 °C/W junction-to-case thermal resistance, body diode reverse recovery time of 35–53 ns, and SOA-limited avalanche energy of 300 mJ under defined test conditions.

Technical Context

This MOSFET employs planar silicon-gate technology with optimized cell pitch and trench-assisted drift region design to achieve low R_DS(on) while maintaining robust dV/dt immunity (>10 V/ns) and unclamped inductive switching capability. Its body diode features reduced Q_rr (44–66 nC) and I_RRM ≤ 2.1 A, enabling fast recovery in synchronous rectifier topologies without external Schottky supplementation.

The device operates with gate threshold voltage of 2.0–4.0 V and exhibits positive temperature coefficient for R_DS(on), supporting parallel operation. Dynamic parameters-including C_iss = 3550 pF, C_oss(eff, TR) = 380 pF, and t_r/t_f = 87/70 ns-are characterized at V_DD = 65 V, I_D = 44 A, and R_G = 5.6 Ω, confirming suitability for ZVS/ZCS resonant converters.

Key Specifications

Pinout & Package

IRFS4610PBF is housed in a TO-220AB package with isolated tab (drain-connected), standard 3-pin through-hole configuration, and 10 lb·in (1.1 N·m) mounting torque specification. The package provides mechanical robustness and thermal performance suitable for industrial power supplies.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 100 V power switching applications.

Compared with STP75NF10 and IXTH75N10L2, IRFS4610PBF offers the best balance of low gate charge (90 nC), high avalanche energy (300 mJ), and proven thermal performance (0.77 °C/W), making it optimal for high-reliability SMPS where both efficiency and transient robustness are mandatory.

Availability

IRFS4610PBF is available at Aetrix Electronics and suitable for high-efficiency synchronous rectification in SMPS, uninterruptible power supply inverters, and high-speed power switching circuits requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRFS4610PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

IRFS4610PBF belongs to the HEXFET® Power MOSFET product line, engineered specifically for high-frequency, high-current switching in server PSUs, telecom power, and industrial UPS systems where avalanche hardness and thermal reliability are critical.

FAQ

What is the maximum recommended gate drive voltage for IRFS4610PBF?

The absolute maximum gate-to-source voltage is ±20 V, but the device is characterized and optimized for 10 V gate drive. Operation at 12–15 V increases R_DS(on) margin and improves dV/dt immunity, while exceeding 15 V risks accelerated gate oxide degradation over lifetime. Gate drive must remain within −5 V to +15 V during normal switching to avoid latch-up or threshold shift.

Can IRFS4610PBF be used in parallel configurations?

Yes-its positive R_DS(on) temperature coefficient (0.085 V/°C) enables inherent current sharing across paralleled units. Successful implementation requires matched gate drive loop inductance (<5 nH), symmetrical PCB layout, and individual gate resistors (≥10 Ω) to damp oscillation. Thermal coupling via shared heatsink is essential to maintain uniform junction temperature across all devices.

Does IRFS4610PBF have a fully rated body diode for reverse conduction?

Yes-the integrated body diode is rated for 73 A continuous source current (I_S) and 290 A pulsed (I_SM) at T_C = 25°C, with V_SD ≤ 1.3 V and t_rr = 35–53 ns. It is designed for synchronous rectification duty, not freewheeling-only use; reverse recovery parameters are fully characterized per JEDEC standards and validated in hard-switched SMPS reference designs.

Is IRFS4610PBF suitable for surface-mount assembly?

No-IRFS4610PBF uses the TO-220AB package, which is explicitly not recommended for surface-mount applications per Infineon's package note. Its leadframe geometry, thermal mass, and solder joint reliability are designed for through-hole mounting with mechanical screw attachment to heatsinks. For SMT alternatives, consider D2Pak variants like IRFB4610PbF or equivalent SMD packages with validated reflow profiles.