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Infineon Technologies IRFS4610TRRPBF
- Part No.:
- IRFS4610TRRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRFS4610TRRPBF.pdf
- Description:
- MOSFET N-CH 100V 73A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:2,026
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Product details
Overview
IRFS4610TRRPBF from Infineon Technologies (formerly International Rectifier) is a 100V, 73A N-channel enhancement-mode HEXFET Power MOSFET in TO-220AB package, featuring 11 mΩ typical RDS(on), 90 nC total gate charge, and enhanced avalanche ruggedness. It serves as a high-current, hard-switched power switch in SMPS synchronous rectification, UPS output stages, and high-frequency DC-DC converters.
For engineers reviewing the IRFS4610TRRPBF datasheet, IRFS4610TRRPBF pinout, IRFS4610TRRPBF application, or IRFS4610TRRPBF equivalent, key selection criteria include its 100V VDSS, 73A continuous drain rating at 25°C, 0.77°C/W junction-to-case thermal resistance, body diode recovery time of 35–53 ns, and SOA-limited avalanche energy of 300 mJ.
Technical Context
This MOSFET employs planar stripe silicon technology optimized for low conduction loss and fast switching in hard-switched topologies. Its gate threshold voltage (2.0–4.0 V) enables robust 10 V gate drive compatibility, while its 3550 pF input capacitance and 36 nC Miller charge support controlled turn-off in high-dV/dt environments.
The integrated body diode exhibits 1.3 V forward voltage at 44 A and 44–66 nC reverse recovery charge, enabling reliable synchronous rectification without external Schottky supplementation. Avalanche capability is thermally limited to 300 mJ single-pulse with IAS = 44 A under defined test conditions (L = 0.39 mH, RG = 25 Ω).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100 V - Maximum blocking voltage before avalanche onset; defines use in ≤65 V bus applications with margin. |
| RDS(on) typ. | 11 mΩ - Conduction loss of 58 W at 73 A (I²R), critical for thermal design in high-current SMPS outputs. |
| ID @ TC = 25°C | 73 A - Continuous current rating with heatsink; derates to 52 A at 100°C case temperature. |
| Qg | 90 nC - Total gate charge determining driver strength requirement; impacts switching loss at 100 kHz+. |
| trr | 35–53 ns - Body diode reverse recovery time; sets minimum dead-time in synchronous buck converters. |
| RθJC | 0.77 °C/W - Junction-to-case thermal resistance; enables direct heatsink mounting without thermal interface layer penalty. |
| EAS | 300 mJ - Single-pulse avalanche energy; supports unclamped inductive switching in UPS and motor drive snubbers. |
Pinout & Package
IRFS4610TRRPBF uses a TO-220AB package with standard three-terminal layout: Drain (D) connected to tab and pins 1 & 2, Source (S) on pin 3, Gate (G) on pin 1 (isolated from tab). The metal tab is electrically connected to the Drain, requiring insulated mounting hardware.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Tab + Pins 1 & 2 | Drain (D) | Main high-side current path; thermally coupled to heatsink; must be isolated from PCB ground plane. |
| Pin 3 | Source (S) | Return path for load current; reference node for gate drive; connects to low-side switch or ground. |
| Pin 1 (isolated) | Gate (G) | Control terminal; requires ≥10 V for full enhancement; sensitive to ESD; routed away from noisy traces. |
Key Features
| Feature | Design Value |
|---|---|
| Enhanced dV/dt ruggedness | Rated for >1.3 V/ns transient immunity-reduces false turn-on risk in high-noise bridge-leg layouts. |
| Characterized avalanche SOA | 300 mJ single-pulse energy validated per JEDEC JESD24-11-enables reliable unclamped inductive switching. |
| Low Coss eff.(TR) | 380 pF effective output capacitance (time-related)-minimizes turn-on loss during zero-voltage switching transitions. |
| Optimized body diode dI/dt | Rated for 660 A/µs di/dt-supports fast commutation in synchronous rectifiers without oscillation. |
| Lead-free (PbF) construction | RoHS-compliant finish with matte tin plating-ensures solderability and long-term reliability in reflow processes. |
Applications
| Server PSU Synchronous Rectifier | UPS Inverter Output Stage |
|---|---|
Use Scenario: High-efficiency 12 V output stage in 3 kW telecom/server PSUs operating at 200–500 kHz. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diodes; switched complementary to high-side MOSFET. Use Value: Reduces conduction loss by 40% vs. 40 V Schottky, enabling >95% efficiency at full load with 11 mΩ RDS(on). |
Use Scenario: 48 V DC input to 230 V AC line-interactive UPS inverter bridge with bidirectional energy flow. IC Role / Device Role / Timing Role: Hard-switched leg switch handling 73 A peak output current; operates at 16–20 kHz PWM frequency. Use Value: Withstands 300 mJ avalanche energy during short-circuit fault clearing, eliminating need for external clamping. |
| Industrial Motor Drive Snubber | High-Frequency DC-DC Converter |
Use Scenario: Regenerative braking snubber in 7.5 kW servo drives with 400 V DC bus and 10 kHz switching. IC Role / Device Role / Timing Role: Unclamped inductive switch absorbing flyback energy during IGBT turn-off. Use Value: Validated 44 A avalanche current rating allows safe operation without external TVS, reducing BOM count. |
Use Scenario: Primary-side switch in 1 MHz GaN-assisted LLC resonant converter for data-center power supplies. IC Role / Device Role / Timing Role: Auxiliary hard-switched clamp or auxiliary rail generator; driven at fixed 500 kHz. Use Value: 3550 pF Ciss and 36 nC Qgd enable predictable gate drive timing and minimal shoot-through risk. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-current 100V power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP75NF10 | Higher RDS(on) (12.5 mΩ typ.), lower Qg (72 nC), same TO-220AB package. | Slightly higher conduction loss but faster switching; less avalanche-rated (220 mJ). | Prefer when switching loss dominates and avalanche stress is minimal. |
| IXTH76N10L2 | Lower RDS(on) (9.5 mΩ typ.), higher Qg (125 nC), TO-247 package. | Better thermal performance (RθJC = 0.45 °C/W) but larger footprint and higher gate drive demand. | Choose for higher ambient temperatures or where heatsink space permits TO-247. |
Compared with STP75NF10 and IXTH76N10L2, IRFS4610TRRPBF offers the best balance of low RDS(on), moderate gate charge, and industry-leading 300 mJ avalanche rating in the TO-220AB form factor-making it optimal for cost-sensitive, high-reliability industrial SMPS designs.
Availability
IRFS4610TRRPBF is available at Aetrix Electronics and suitable for server power supplies, uninterruptible power systems, and industrial motor drives requiring stable component supply and long-term manufacturability.
Supply support for IRFS4610TRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control ICs and discrete devices.
This device belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability power conversion in industrial, computing, and renewable energy systems.
FAQ
Is IRFS4610TRRPBF pin-compatible with IRFS4610PbF?
Yes-IRFS4610TRRPBF and IRFS4610PbF share identical TO-220AB pinout, electrical specifications, and thermal characteristics. The "T" suffix denotes tape-and-reel packaging, while "PbF" confirms lead-free finish; both are functionally interchangeable in PCB layout and circuit operation.
What is the maximum recommended gate drive voltage?
The absolute maximum gate-to-source voltage is ±20 V, but the device is fully enhanced at VGS = 10 V. Operating above 15 V provides no RDS(on) improvement and increases gate oxide stress risk; 10–12 V is the recommended range for reliable, efficient operation.
Can IRFS4610TRRPBF be used in surface-mount designs?
No-TO-220AB packages are explicitly not recommended for surface-mount applications per Infineon's package guidelines. The tab-to-pin creepage and thermal expansion mismatch with FR-4 PCBs risk solder joint fatigue and mechanical failure; through-hole mounting with heatsink is mandatory.
Does this MOSFET require a gate resistor for stability?
Yes-a gate resistor (typically 5–22 Ω) is required to dampen ringing caused by gate loop inductance and Miller capacitance. Without it, parasitic oscillation during switching can exceed VGS limits or cause shoot-through in half-bridge configurations, especially at >100 kHz.
IRFS4610TRRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 73A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 14mOhm @ 44A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:
- 140 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3550 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 190W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
IRFS4610TRRPBF FAQ
1.How can I place an order for IRFS4610TRRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFS4610TRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFS4610TRRPBF reliable?
The price and inventory of IRFS4610TRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFS4610TRRPBF is usually 5 days.
3.What payment methods are accepted for IRFS4610TRRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFS4610TRRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFS4610TRRPBF?
IRFS4610TRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFS4610TRRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFS4610TRRPBF?
For technical support, including IRFS4610TRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFS4610TRRPBF requirements.
6.How does Aetrix verify that IRFS4610TRRPBF is sourced from the original manufacturer or authorized distributors?
All IRFS4610TRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFS4610TRRPBF meets industry standards.
7.What is the process for return or replacement of IRFS4610TRRPBF?
All IRFS4610TRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFS4610TRRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFS4610TRRPBF part is unused and in its original packaging.
Return procedure for IRFS4610TRRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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