Infineon Technologies IRFS4615PBF
- Part No.:
- IRFS4615PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRFS4615PBF.pdf
- Description:
- MOSFET N-CH 150V 33A D2PAK
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
IRFS4615PBF from Infineon Technologies (formerly International Rectifier) is a 150V, 33A N-channel enhancement-mode HEXFET® Power MOSFET in D2PAK (TO-262) package, optimized for hard-switched and high-frequency power conversion. It features 34.5 mΩ typical RDS(on), 26 nC total gate charge, and enhanced body diode dV/dt and dI/dt capability-enabling robust synchronous rectification in SMPS and UPS systems.
For engineers reviewing the IRFS4615PBF datasheet, IRFS4615PBF pinout, IRFS4615PBF application, or IRFS4615PBF equivalent, key selection criteria include avalanche ruggedness (109 mJ EAS), SOA-limited switching performance up to 175°C junction temperature, and validated unclamped inductive switching behavior under 21A IAS at VGS = 10V.
Technical Context
This MOSFET employs planar silicon process with optimized cell geometry to achieve low conduction loss while maintaining strong dynamic ruggedness. Its gate threshold voltage (3.0–5.0 V) and 2.7 Ω internal gate resistance support stable drive in high-speed gate-controlled topologies.
The device integrates an intrinsic fast-recovery body diode with 70 ns typical reverse recovery time (TJ = 25°C, IF = 21A), 177 nC Qrr, and 4.9 A peak reverse recovery current-critical for minimizing commutation loss in synchronous buck and LLC resonant converters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 150 V - Maximum blocking voltage before avalanche onset; supports 100 V bus designs with 50% safety margin |
| RDS(on) typ. | 34.5 mΩ - Conduction loss of ~0.04 W at 10 A DC, enabling >95% efficiency in 12–48 V output SMPS stages |
| ID @ TC = 25°C | 33 A - Continuous drain current rating with heatsink; derates to 24 A at 100°C case temperature |
| Qg | 26 nC - Total gate charge determines driver strength requirement; enables <35 ns rise time with 7.3 Ω gate resistor |
| EAS | 109 mJ - Single-pulse avalanche energy at TJ = 25°C; validates safe operation during inductive turn-off transients |
| trr | 70 ns - Reverse recovery time at TJ = 25°C, IF = 21A, dI/dt = 100 A/µs; reduces cross-conduction loss in synchronous rectifiers |
Pinout & Package
IRFS4615PBF uses the D2PAK (TO-262) surface-mount package with exposed drain pad for thermal management. The three-terminal configuration supports high-current PCB mounting with low-inductance source return paths.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | Gate | Control terminal; requires ≥10 V to fully enhance; 3.0–5.0 V VGS(th) ensures noise-immune turn-on in noisy power environments |
| D | Drain | Main high-side current path; electrically connected to exposed copper tab-must be tied to system ground or high-voltage rail per topology |
| S | Source | Reference node for gate drive and current sensing; low-inductance connection critical for minimizing switching oscillation |
Key Features
| Feature | Design Value |
|---|---|
| Enhanced avalanche ruggedness | 109 mJ EAS and 21 A IAR validated under unclamped inductive load-reduces need for external snubbers in flyback/forward converters |
| Optimized body diode | 70 ns trr and 177 nC Qrr at 25°C enable efficient synchronous rectification without external Schottky assist diodes |
| Low gate charge | 26 nC Qg and 9.0 nC Qgd reduce driver power loss and improve switching speed control in 100–500 kHz applications |
| Thermal performance | 1.045 °C/W RθJC allows 140 W dissipation with modest heatsinking-supports compact 300–500 W industrial PSU designs |
Applications
| High-Efficiency Synchronous Rectification | Uninterruptible Power Supply (UPS) |
|---|---|
Use Scenario: Secondary-side switching in isolated DC-DC converters for server PSUs and telecom rectifiers. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode; driven by transformer-coupled or controller-synchronized gate signal. Use Value: Reduces conduction loss by >40% vs. 45 V Schottky at 20 A, improving full-load efficiency from 92% to 94.5%. | Use Scenario: Inverter stage and battery charging switch in line-interactive and online UPS systems. IC Role / Device Role / Timing Role: High-current bidirectional switch handling AC line-to-battery and battery-to-AC inversion paths. Use Value: Withstands 150 V DC bus and 33 A continuous load while maintaining <1.5 V forward drop in body diode mode during transfer switching. |
| Hard-Switched SMPS | High-Frequency DC-DC Converters |
Use Scenario: Primary-side switch in 65–150 kHz flyback and forward converters for industrial control power supplies. IC Role / Device Role / Timing Role: Main power switch subjected to repetitive unclamped inductive turn-off stress. Use Value: Validated 109 mJ single-pulse avalanche energy prevents failure during startup or overload without added clamping circuitry. | Use Scenario: High-side switch in 300–600 kHz half-bridge or phase-shifted full-bridge DC-DC modules for AI accelerators and FPGA power rails. IC Role / Device Role / Timing Role: Fast-turning main switch requiring low Qgd/Qg ratio and minimal Coss nonlinearity. Use Value: 9.0 nC Qgd and 382 pF Coss(TR) ensure clean zero-voltage switching transition with <25 ns td(off) and <20 ns tf. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP14NK15Z | 150 V VDSS, 14 A ID, 120 mΩ RDS(on), TO-220 package | Lower current rating and higher on-resistance; unsuitable for >15 A continuous loads | Select when cost sensitivity outweighs efficiency and thermal constraints in low-power auxiliary supplies |
| IXTP30N15P | 150 V VDSS, 30 A ID, 45 mΩ RDS(on), TO-220 package | Higher RDS(on) and no avalanche rating published; lacks EAS validation data | Prefer only in non-avalanche-prone topologies where gate drive simplicity and legacy footprint compatibility are prioritized |
Compared with STP14NK15Z and IXTP30N15P, IRFS4615PBF delivers superior power density via D2PAK thermal performance, verified avalanche immunity, and lower Qg/RDS(on) trade-off-making it the preferred choice for space-constrained, high-reliability 20–35 A SMPS designs.
Availability
IRFS4615PBF is available at Aetrix Electronics and suitable for high-efficiency synchronous rectification, uninterruptible power supply inverters, and hard-switched SMPS requiring stable component supply across industrial, telecom, and computing end markets.
Supply support for IRFS4615PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor leader specializing in power management, automotive electronics, and industrial control ICs and discrete devices.
IRFS4615PBF belongs to the HEXFET® Power MOSFET product line, engineered for high-reliability, high-frequency power conversion in mission-critical infrastructure equipment where thermal stability and transient ruggedness are mandatory.
FAQ
Is IRFS4615PBF lead-free and RoHS compliant?
Yes, IRFS4615PBF is lead-free and RoHS compliant per EU Directive 2011/65/EU. The "PbF" suffix explicitly denotes lead-free termination, and the device meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1) for unlimited floor life at ≤30°C/60% RH.
What is the maximum recommended gate drive voltage for IRFS4615PBF?
The absolute maximum gate-to-source voltage is ±20 V, but the recommended operating range is 10–15 V for reliable enhancement and minimized gate oxide stress. Driving above 15 V yields diminishing RDS(on) improvement while increasing risk of gate overvoltage during ringing.
Can IRFS4615PBF be used in parallel configurations?
Yes, IRFS4615PBF supports paralleling due to its positive RDS(on) temperature coefficient (0.19 V/°C breakdown voltage TC). Matching gate resistors and symmetrical PCB layout are required to ensure current sharing; thermal coupling between devices must be minimized to avoid thermal runaway.
Does IRFS4615PBF require a gate resistor, and what value is recommended?
A gate resistor is mandatory to dampen ringing and limit peak gate current. For 12 V gate drive and 7.3 Ω internal RG, a 10–22 Ω external resistor provides optimal trade-off between switching speed (<35 ns tr) and EMI suppression-verified in Figure 23a test circuit with 15 V driver.
IRFS4615PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 150 V
- Current - Continuous Drain (Id) @ 25°C:
- 33A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 42mOhm @ 21A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:
- 40 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1750 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 144W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
IRFS4615PBF FAQ
1.How can I place an order for IRFS4615PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFS4615PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFS4615PBF reliable?
The price and inventory of IRFS4615PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFS4615PBF is usually 5 days.
3.What payment methods are accepted for IRFS4615PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFS4615PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFS4615PBF?
IRFS4615PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFS4615PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFS4615PBF?
For technical support, including IRFS4615PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFS4615PBF requirements.
6.How does Aetrix verify that IRFS4615PBF is sourced from the original manufacturer or authorized distributors?
All IRFS4615PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFS4615PBF meets industry standards.
7.What is the process for return or replacement of IRFS4615PBF?
All IRFS4615PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFS4615PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFS4615PBF part is unused and in its original packaging.
Return procedure for IRFS4615PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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