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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFS4710PBF

Name: IRFS4710PBF
Brand: Infineon Technologies
SKU: IRFS4710PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFS4710PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRFS4710PBF.pdf

Description:: MOSFET N-CH 100V 75A D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFS4710PBF from Infineon Technologies is a 100V, 75A N-channel enhancement-mode HEXFET® Power MOSFET in TO-220AB package, featuring R_DS(on) = 0.014 Ω at V_GS = 10 V, 45 A, and optimized for high-efficiency DC-DC converters, motor control inverters, and UPS power stages.

For engineers reviewing the IRFS4710PBF datasheet, IRFS4710PBF pinout, IRFS4710PBF application, or IRFS4710PBF equivalent, key selection criteria include its low gate charge (Q_g = 110–170 nC), fast switching (t_r = 130 ns, t_f = 38 ns), avalanche-rated ruggedness (E_AS = 190 mJ), and thermally robust junction-to-case resistance (R_θJC = 0.74 °C/W).

Technical Context

This MOSFET employs planar silicon process with fully characterized output capacitance (C_oss = 440 pF @ V_DS = 25 V) and effective C_oss = 430 pF across 0–80 V, enabling precise snubberless flyback and resonant LLC design. Its gate threshold voltage (V_GS(th) = 3.5–5.5 V) ensures reliable turn-on with standard 10 V gate drivers.

The device integrates a low-V_SD body diode (1.3 V @ 45 A, T_J = 25 °C) with controlled reverse recovery (Q_rr = 180–260 nC, t_rr = 74–110 ns) and high dv/dt immunity (8.2 V/ns peak diode recovery), supporting hard-switched synchronous rectification and bidirectional energy transfer.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Withstands up to 100 V drain-source blocking voltage before avalanche conduction.
R_DS(on) max	0.014 Ω @ V_GS = 10 V, I_D = 45 A - Enables <1.5 W conduction loss at 45 A, critical for thermal management in high-current switch nodes.
I_D continuous	75 A @ T_C = 25 °C - Supports high-output-power topologies without parallel devices in TO-220AB footprint.
Q_g total	110–170 nC - Determines gate drive power and switching speed; enables <100 ns turn-on delay with 4.5 Ω driver.
E_AS	190 mJ - Specifies single-pulse unclamped inductive switching capability, essential for overcurrent fault tolerance.
R_θJC	0.74 °C/W - Defines thermal path efficiency from junction to case; allows direct heatsink mounting with predictable ΔT.
t_r/t_f	130 ns / 38 ns - Fast edge rates reduce switching transition losses in >100 kHz SMPS designs.

Pinout & Package

IRFS4710PBF uses the industry-standard TO-220AB package with isolated tab (drain-connected), 3-pin configuration, and mechanical dimensions compliant with JEDEC outline TO-220AB. Mounting torque: 10 lbf·in (1.1 N·m); soldering temperature: 300 °C for 10 s at 1.6 mm from case.

Pin/Terminal	Circuit Role	Design Meaning
1 – Gate	Control electrode	Receives voltage-controlled signal to modulate channel conductivity; requires ≤±20 V rating and low-impedance drive.
2 – Drain	Main current output terminal	Connected to high-side switch node or DC bus; electrically tied to metal tab for thermal conduction and EMI shielding.
3 – Source	Main current return path	Serves as reference for gate drive and current sensing; forms common node with driver ground in low-side configurations.
4 – Drain (Tab)	Secondary drain connection	Provides low-inductance, high-current path to heatsink; must be electrically isolated from PCB ground unless system design permits.

Key Features

Feature	Design Value
Low gate-to-drain charge (Q_gd)	40 nC - Reduces Miller effect during switching transitions, improving noise immunity and dV/dt robustness.
Fully characterized C_oss and C_rss	C_oss = 440 pF, C_rss = 250 pF @ V_DS = 25 V - Enables accurate soft-switching timing and ZVS/ZCS circuit modeling.
Avalanche-rated operation	E_AS = 190 mJ, I_AR = 45 A - Allows safe operation under inductive load faults without external clamping components.
Lead-free construction	Pb-free plating per RoHS Directive - Eliminates hazardous substances while maintaining solderability and thermal cycling reliability.
Body diode with low Q_rr	Q_rr = 180–260 nC - Minimizes reverse recovery loss and associated EMI in freewheeling and synchronous rectifier applications.

Applications

High-Frequency DC-DC Converters

Motor Control Inverters

Use Scenario: Primary-side switch in 300–500 kHz isolated flyback or forward converters delivering 200–500 W.

IC Role / Device Role / Timing Role: High-side power switch handling full input voltage and load current; operates in hard-switched PWM mode.

Use Value: Low R_DS(on) and fast switching minimize conduction and transition losses, achieving >94% efficiency at full load.

Use Scenario: Phase-leg upper switch in 3-phase BLDC or PMSM inverter driving industrial pumps or fans (1–5 kW).

IC Role / Device Role / Timing Role: High-voltage, high-current switching element in bridge topology; commutated at 8–20 kHz.

Use Value: Avalanche rating absorbs inductive kickback during PWM dead-time, eliminating need for external snubbers.

Uninterruptible Power Supplies

Industrial DC Bus Switching

Use Scenario: Inverter stage in line-interactive UPS systems converting 48 V or 120 V DC battery bank to 230 V AC output.

IC Role / Device Role / Timing Role: Output H-bridge switch operating in modified sine-wave or pure sine-wave SPWM mode.

Use Value: Robust thermal performance (R_θJC = 0.74 °C/W) sustains 75 A peak current during surge loads without derating.

Use Scenario: Main isolation switch in programmable DC power supplies or battery test equipment managing 100 V/50 A bus lines.

IC Role / Device Role / Timing Role: Solid-state relay replacement with fast turn-on/off and zero-crossing compatibility.

Use Value: Low gate charge enables microcontroller-driven switching with minimal driver overhead and <1 µs response latency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP75NF75	R_DS(on) = 0.0095 Ω @ 10 V, but higher Q_g = 180 nC and no published E_AS rating	Better conduction loss at low V_GS, but less suitable for unclamped inductive switching	Prefer when thermal budget dominates over switching loss and fault robustness is managed externally
IXTH75N10L2	Lower V_DSS = 100 V same, but logic-level (V_GS(th) = 1.8–2.8 V) and higher R_DS(on) = 0.018 Ω	Enables direct MCU GPIO drive but sacrifices conduction efficiency at high current	Choose when gate drive voltage is limited to 5 V and system prioritizes simplicity over peak efficiency

Compared with STP75NF75 and IXTH75N10L2, IRFS4710PBF delivers optimal balance of low R_DS(on), moderate Q_g, and verified avalanche ruggedness-making it preferred for industrial-grade 100 V switch-mode power conversion where reliability under transient stress is non-negotiable.

Availability

IRFS4710PBF is available at Aetrix Electronics and suitable for high-frequency DC-DC converters, motor control inverters, and uninterruptible power supplies requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRFS4710PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The IRFS4710PBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-current, high-voltage switching in industrial power conversion, where ruggedness, thermal stability, and repeatable avalanche performance are mandatory.

FAQ

What is the maximum continuous drain current for IRFS4710PBF at 100°C case temperature?

The maximum continuous drain current is 53 A at T_C = 100 °C and V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220AB package and must be validated against actual heatsink performance and ambient conditions.

Does IRFS4710PBF have a built-in body diode, and what are its key parameters?

Yes, it integrates a monolithic n-channel MOSFET body diode with V_SD = 1.3 V at I_S = 45 A and T_J = 25 °C, t_rr = 74–110 ns, and Q_rr = 180–260 nC. These values are measured under standardized di/dt = 100 A/µs conditions and define freewheeling behavior in half-bridge and synchronous rectifier topologies.

Can IRFS4710PBF be used in avalanche mode, and what is its rated single-pulse energy?

Yes, it is fully characterized for unclamped inductive switching with E_AS = 190 mJ at T_J = 25 °C. This rating applies to single-pulse events only; repetitive avalanche energy is limited to 20 mJ, and operation beyond these limits risks permanent parametric shift or failure.

What is the recommended gate resistor value for optimal switching performance?

A 4.5 Ω gate resistor is used in the datasheet's switching time test circuit (Fig 10a), yielding t_d(on) = 35 ns, t_r = 130 ns, t_d(off) = 41 ns, and t_f = 38 ns. Lower values increase switching speed but risk ringing and EMI; higher values improve stability at the cost of increased switching loss.

IRFS4710PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 14mOhm @ 45A, 10V

Vgs(th) (Max) @ Id:: 5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 170 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6160 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 200W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRFS4710PBF FAQ

1.How can I place an order for IRFS4710PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFS4710PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFS4710PBF reliable?

The price and inventory of IRFS4710PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFS4710PBF is usually 5 days.

3.What payment methods are accepted for IRFS4710PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFS4710PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFS4710PBF?

IRFS4710PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFS4710PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFS4710PBF?

For technical support, including IRFS4710PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFS4710PBF requirements.

6.How does Aetrix verify that IRFS4710PBF is sourced from the original manufacturer or authorized distributors?

All IRFS4710PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFS4710PBF meets industry standards.

7.What is the process for return or replacement of IRFS4710PBF?

All IRFS4710PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFS4710PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFS4710PBF part is unused and in its original packaging.

Return procedure for IRFS4710PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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