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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFS52N15DPBF

Name: IRFS52N15DPBF
Brand: Infineon Technologies
SKU: IRFS52N15DPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFS52N15DPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRFS52N15DPBF.pdf

Description:: MOSFET N-CH 150V 51A D2PAK

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Product details

Overview

IRFS52N15DPBF from Infineon Technologies (formerly International Rectifier) is a 150 V, 51 A N-channel enhancement-mode Power MOSFET in TO-220AB package, optimized for high-frequency DC-DC converters and plasma display panel (PDP) power stages. It features 32 mΩ R_DS(on) at V_GS = 10 V, 60 nC total gate charge, and fully characterized C_oss (550 pF effective) to simplify snubberless flyback and resonant converter design.

For engineers reviewing the IRFS52N15DPBF datasheet, IRFS52N15DPBF pinout, IRFS52N15DPBF application, or IRFS52N15DPBF equivalent, key selection criteria include avalanche-rated 200 V breakdown, low Q_gd/Q_g ratio (0.47), 175 °C max junction temperature, and validated unclamped inductive switching performance up to 36 A.

Technical Context

This device employs planar HEXFET® silicon technology with optimized cell pitch and trench-free gate structure to achieve low R_DS(on) × Q_g figure-of-merit (1.92 Ω·nC). Its dynamic parameters-including 28 nC Q_gd, 47 ns rise time, and 25 ns fall time-are characterized under standardized 75 V V_DD, 36 A ID, and 2.5 Ω gate resistance conditions.

The body diode exhibits 1.5 V forward voltage at 36 A and 25 °C, with 140–210 ns reverse recovery time and 780–1170 nC Q_rr at di/dt = 100 A/µs. Thermal resistance R_θJC is specified at 0.47 °C/W (typical), validated after 1000 thermal cycles from −55 to +150 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	150 V - Maximum blocking voltage in hard-switched topologies without derating
R_DS(on) max	32 mΩ @ V_GS = 10 V - Enables <1.2 W conduction loss at 60 A continuous drain current
I_D @ T_C = 25°C	51 A - Continuous current rating with heatsink mounted to flat greased surface
Q_g	60 nC (typ) - Determines gate driver power requirement and switching speed control
C_oss,eff	550 pF - Effective output capacitance used for zero-voltage switching (ZVS) timing calculations
E_AS	450 mJ (min) - Single-pulse avalanche energy tolerance supports robustness in inductive load transients
T_J max	175 °C - Enables operation in high-ambient industrial environments with margin for thermal cycling

Pinout & Package

IRFS52N15DPBF uses the standard TO-220AB package with isolated tab (drain-connected), featuring three leads: Gate (G), Drain (D), and Source (S). The package provides mechanical mounting via M3 screw (1.1 N·m torque) and thermal interface to heatsink through the metal tab.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Controls channel conduction; requires ≥10 V drive for full enhancement; ±30 V absolute max rating
D	Drain	High-side switch node; electrically connected to metal tab; must be insulated from heatsink unless referenced to same potential
S	Source	Power return path and reference for gate drive; carries full load current and body diode reverse recovery charge

Key Features

Feature	Design Value
Low Q_gd/Q_g ratio	0.47 - Reduces Miller-induced turn-off delay and improves controllability in high-dV/dt environments
Fully characterized C_oss	550 pF effective - Enables accurate ZVS transition timing in LLC and phase-shifted full-bridge converters
Avalanche-rated V_(BR)DSS	200 V min - Guarantees safe operation during transient overvoltage events beyond nominal 150 V rating
Lead-free construction	Pb-free plating per JEDEC J-STD-609 - Complies with RoHS and automotive ELV directives without SnPb reflow compromise
Thermal wearout validation	R_θJC = 0.65 °C/W (end-of-life) - Confirmed after 1000 thermal cycles, supporting long-term reliability in cyclic power applications

Applications

Plasma Display Panel (PDP) Sustain Circuit

High-Frequency Isolated DC-DC Converter

Use Scenario: Driving sustain electrodes in AC PDP panels requiring fast, repetitive 150–200 V switching at ~200 kHz.

IC Role / Device Role / Timing Role: High-side power switch in half-bridge sustain stage; handles bidirectional current via body diode during flyback phase.

Use Value: Low Q_gd and 25 ns fall time minimize dead-time losses; 175 °C rating sustains operation during localized heating in compact panel enclosures.

Use Scenario: Primary-side switch in 100–500 kHz LLC resonant converter for telecom or server power supplies.

IC Role / Device Role / Timing Role: Zero-voltage switched (ZVS) main transistor; leverages C_oss,eff = 550 pF for precise resonant tank tuning.

Use Value: Fully characterized C_oss eliminates iterative capacitor selection; 450 mJ E_AS prevents failure during startup inrush or short-circuit recovery.

Industrial Motor Drive Inverter Stage

Uninterruptible Power Supply (UPS) Output Stage

Use Scenario: Half-bridge leg in 3 kW variable-frequency drive for HVAC compressors and pumps.

IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 10–20 kHz PWM inverters; conducts motor back-EMF via body diode.

Use Value: 32 mΩ R_DS(on) reduces conduction loss vs. comparable 150 V IGBTs; 140 ns t_rr limits diode switching loss during commutation.

Use Scenario: Bidirectional buck-boost switch in online UPS battery charging/inverter circuits operating at 10–50 kHz.

IC Role / Device Role / Timing Role: Synchronous rectifier and active clamp switch; alternates between forward conduction and reverse recovery modes.

Use Value: 1.5 V V_SD at 36 A lowers forward drop vs. external Schottky; Q_rr = 780 nC enables predictable snubber sizing for voltage overshoot control.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 150 V power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP55NF15	R_DS(on) = 30 mΩ (lower), Q_g = 75 nC (higher), no published C_oss,eff or avalanche energy data	Lacks documented avalanche ruggedness and C_oss characterization for ZVS designs	Preferable where lowest conduction loss dominates; avoid in unclamped inductive or resonant topologies
IXTH52N15P	R_DS(on) = 34 mΩ (slightly higher), Q_g = 58 nC (comparable), TO-247 package with lower R_θJC = 0.35 °C/W	Better thermal performance but larger footprint; no lead-free option available	Select when board space allows TO-247 and junction temperature margin is critical above 150 °C

Compared with STP55NF15 and IXTH52N15P, IRFS52N15DPBF uniquely balances low Q_g, validated avalanche energy, and lead-free compliance in TO-220AB-making it optimal for cost-sensitive, thermally constrained, and safety-critical PDP and telecom power stages.

Availability

IRFS52N15DPBF is available at Aetrix Electronics and suitable for plasma display panel sustain circuits, high-frequency DC-DC converters, and industrial motor drive inverters requiring stable component supply and long-term lifecycle support.

Supply support for IRFS52N15DPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with core expertise in silicon-based power devices and system-level energy efficiency solutions.

This part belongs to the HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in industrial power conversion, consumer display systems, and uninterruptible power architectures.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

A 2.5 Ω gate resistor is used in the official datasheet test circuit for switching time characterization. For practical designs, values between 2.2 Ω and 10 Ω are typical: lower values reduce switching loss but increase EMI and gate driver stress; higher values improve EMI control but extend td(off) and tr/tf by up to 3×. Always verify with actual layout parasitics and V_GS ringing.

Can IRFS52N15DPBF be used in synchronous rectification applications?

No-it is not optimized for synchronous rectification due to its relatively high V_SD (1.5 V) and Q_rr (780–1170 nC), which increase conduction and switching losses compared to dedicated SR MOSFETs. Its body diode is intended for freewheeling and clamping, not continuous bidirectional conduction. Use dedicated logic-level SR FETs like IRF7832 for such roles.

Is the TO-220AB package electrically isolated?

Yes-the TO-220AB variant has an electrically isolated metal tab (drain-connected), allowing direct mounting to a common heatsink without insulating hardware. This differs from standard TO-220 where the tab is internally connected to drain but not isolated; isolation is confirmed by the "AB" suffix per Infineon's package designation and verified in the mechanical drawing on irf.com/package/.

Does this part support paralleling for higher current capacity?

Yes-its positive R_DS(on) temperature coefficient (0.16 V/°C) ensures inherent current sharing stability when paralleled. Designers must match gate drive impedance, minimize source inductance imbalance (<1 nH difference), and ensure identical thermal mounting to avoid thermal runaway. Derate total current by 15% versus sum of individual ratings for reliability.

IRFS52N15DPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 51A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 32mOhm @ 36A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 89 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2770 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 230W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRFS52N15DPBF FAQ

1.How can I place an order for IRFS52N15DPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFS52N15DPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFS52N15DPBF reliable?

The price and inventory of IRFS52N15DPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFS52N15DPBF is usually 5 days.

3.What payment methods are accepted for IRFS52N15DPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFS52N15DPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFS52N15DPBF?

IRFS52N15DPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFS52N15DPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFS52N15DPBF?

For technical support, including IRFS52N15DPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFS52N15DPBF requirements.

6.How does Aetrix verify that IRFS52N15DPBF is sourced from the original manufacturer or authorized distributors?

All IRFS52N15DPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFS52N15DPBF meets industry standards.

7.What is the process for return or replacement of IRFS52N15DPBF?

All IRFS52N15DPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFS52N15DPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFS52N15DPBF part is unused and in its original packaging.

Return procedure for IRFS52N15DPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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