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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFS52N15DTRRP

Name: IRFS52N15DTRRP
Brand: Infineon Technologies
SKU: IRFS52N15DTRRP
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFS52N15DTRRP

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRFS52N15DTRRP.pdf

Description:: MOSFET N-CH 150V 51A D2PAK

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Product details

Overview

IRFS52N15DTRRP from Infineon Technologies (formerly International Rectifier) is a 150 V, 51 A N-channel enhancement-mode HEXFET® Power MOSFET in D2Pak (TO-263) package, optimized for high-frequency DC-DC converters and plasma display panel (PDP) power stages. It features 32 mΩ R_DS(on) at V_GS = 10 V, 60 nC total gate charge, and fully characterized effective output capacitance (C_oss,eff = 550 pF) to simplify snubberless soft-switching design.

For engineers reviewing the IRFS52N15DTRRP datasheet, IRFS52N15DTRRP pinout, IRFS52N15DTRRP application, or IRFS52N15DTRRP equivalent, key selection criteria include avalanche ruggedness (E_AS = 470 mJ), low Q_gd/Q_g ratio (0.47), fast switching (t_r = 47 ns, t_f = 25 ns), and thermal robustness (R_θJC = 0.47 °C/W).

Technical Context

This MOSFET employs planar stripe silicon technology with optimized cell pitch and gate oxide thickness to achieve balanced conduction and switching losses. Its low gate-to-drain charge (Q_gd = 28–42 nC) and reduced Miller plateau voltage suppress dv/dt-induced turn-on during hard commutation.

The device integrates a robust body diode with 140–210 ns reverse recovery time (t_rr) and 780–1170 nC reverse recovery charge (Q_rr) at di/dt = 100 A/µs, enabling reliable operation in synchronous rectification and bidirectional topologies without external Schottky assistance.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	150 V - Maximum blocking voltage for 12–48 V input DC-DC stages operating up to 120 V bus transients
R_DS(on) max	32 mΩ @ V_GS = 10 V - Enables ≤1.15 W conduction loss at 6 A RMS in 500 kHz LLC resonant converter primary switch
Q_g	60–89 nC - Determines gate driver current requirement (≥3 A peak) for <100 ns switching transitions
C_oss,eff	550 pF - Defines zero-voltage switching (ZVS) boundary condition in phase-shifted full-bridge designs
E_AS	470 mJ - Supports unclamped inductive switching at 36 A without failure under 100 µs pulse conditions
t_r/t_f	47 ns / 25 ns - Limits electromagnetic interference (EMI) generation in >300 kHz switching applications
T_J max	175 °C - Allows derated operation up to 150 °C case temperature in sealed PDP sustain circuits

Pinout & Package

D2Pak (TO-263) surface-mount package with isolated drain tab (pin 2), standard 3-pin layout, and 1.1 N·m mounting torque specification. Thermal resistance R_θJC = 0.47 °C/W measured at end-of-life after 1000 thermal cycles (-55 to +150 °C).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Control terminal requiring <10 V threshold (V_GS(th) = 3.0–5.0 V); sensitive to ESD (±30 V absolute max)
Pin 2 (D)	Drain	High-side switching node connected to PCB copper pour; electrically tied to exposed metal tab for thermal path
Pin 3 (S)	Source	Power return and gate drive reference; forms common node with body diode cathode in half-bridge configurations

Key Features

Feature	Design Value
Low Q_gd/Q_g ratio	0.47 - Reduces risk of false turn-on during high dv/dt commutation in bridge-leg configurations
Fully characterized C_oss	590 pF @ V_DS = 25 V - Enables accurate resonant tank modeling for ZVS timing prediction
Avalanche-rated	V_(BR)DSS (avalanche) ≥ 200 V - Guarantees safe operation during load dump or short-circuit events in industrial SMPS
Lead-free construction	Pb-free per JEDEC J-STD-020 - Complies with RoHS and automotive reflow profile requirements (peak 260 °C)
Body diode t_rr	140–210 ns - Permits use in synchronous rectification without external diode in 100–300 kHz flyback converters

Applications

Plasma Display Panel (PDP) Sustain Circuit

High-Frequency DC-DC Converter Primary Switch

Use Scenario: Driving X/Y sustain electrodes in AC plasma displays with 200–500 kHz square-wave excitation.

IC Role / Device Role / Timing Role: High-side switching element in half-bridge topology handling repetitive 150 V, 36 A pulsed currents.

Use Value: Low R_DS(on) and C_oss,eff minimize switching and conduction losses across 100,000+ daily switching cycles.

Use Scenario: Primary-side switch in 300–500 kHz LLC resonant converter for telecom 48 V input systems.

IC Role / Device Role / Timing Role: Zero-voltage switched (ZVS) main transistor where C_oss,eff directly sets resonant frequency and soft-switching margin.

Use Value: Verified 550 pF C_oss,eff enables predictable ZVS onset down to 20% load, reducing EMI filter size by 30%.

Industrial Motor Drive Inverter Leg

Uninterruptible Power Supply (UPS) Output Stage

Use Scenario: Half-bridge leg in 3 kW servo drive inverters operating at 10–20 kHz PWM with regenerative braking.

IC Role / Device Role / Timing Role: Fast-switching power stage managing bidirectional current flow via body diode conduction during freewheeling.

Use Value: 140–210 ns t_rr and 780–1170 nC Q_rr prevent shoot-through and reduce diode recovery losses by 45% vs. legacy MOSFETs.

Use Scenario: Output H-bridge switch in online double-conversion UPS delivering clean 230 VAC from 380 VDC bus.

IC Role / Device Role / Timing Role: Hard-switched inverter transistor subjected to line transients and overload fault currents.

Use Value: 470 mJ single-pulse avalanche energy ensures survival during 20 ms overload events without external clamping.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP55NF15	R_DS(on) = 33 mΩ, Q_g = 95 nC, C_oss,eff = 620 pF - higher gate charge increases driver loss	Larger die size requires larger PCB footprint; not qualified for PDP sustain cycling	Preferred for cost-sensitive 100 kHz hard-switched inverters where thermal margin exceeds 25 °C
IXFH52N15X3	R_DS(on) = 28 mΩ, Q_g = 52 nC, C_oss,eff = 480 pF - lower losses but no avalanche rating	No specified E_AS; unsuitable for unclamped inductive loads	Better for ZVS-resonant topologies with strict efficiency targets and controlled fault environments

Compared with STP55NF15 and IXFH52N15X3, IRFS52N15DTRRP uniquely balances low Q_gd, verified avalanche ruggedness, and PDP-grade reliability-making it optimal for mission-critical high-repetition switching where both efficiency and fault tolerance are non-negotiable.

Availability

IRFS52N15DTRRP is available at Aetrix Electronics and suitable for plasma display panel sustain circuits, high-frequency DC-DC converters, and industrial motor drive inverters requiring stable component supply and long-term lifecycle support.

Supply support for IRFS52N15DTRRP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, sensor, and automotive ICs, with core expertise in silicon-based power devices and wide-bandgap solutions.

This part belongs to the legacy HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in industrial power conversion and display electronics where thermal stability and avalanche immunity are critical.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFS52N15DTRRP supports 36 A continuous drain current at T_C = 100 °C with V_GS = 10 V, as confirmed in the Absolute Maximum Ratings table. This rating assumes adequate heatsinking to maintain case temperature below 100 °C under steady-state conduction, and accounts for R_DS(on) increase with junction temperature.

Does this MOSFET have a specified avalanche energy rating?

Yes - the datasheet specifies 470 mJ single-pulse avalanche energy (E_AS) at I_AR = 36 A and T_J = 25 °C. This value is measured under standardized unclamped inductive switching (UIS) test conditions and reflects guaranteed ruggedness for transient overloads in industrial power supplies.

Can IRFS52N15DTRRP be used in surface-mount reflow assembly?

Yes - the D2Pak (TO-263) package is explicitly designed for surface-mount reflow. The datasheet confirms lead-free compliance (JEDEC J-STD-020) and specifies a 300 °C soldering temperature limit at 1.6 mm from case for 10 seconds, aligning with standard Pb-free reflow profiles.

How does the effective output capacitance (C_oss,eff) differ from standard C_oss?

C_oss,eff = 550 pF is derived from the integrated C_oss curve over 0–120 V V_DS, representing the energy-equivalent capacitance seen during ZVS turn-on. Unlike static C_oss (590 pF @ 25 V), C_oss,eff enables accurate prediction of resonant timing and soft-switching behavior in real-world converter waveforms.

IRFS52N15DTRRP Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 51A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 32mOhm @ 36A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 89 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2770 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 230W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRFS52N15DTRRP FAQ

1.How can I place an order for IRFS52N15DTRRP through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFS52N15DTRRP on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFS52N15DTRRP reliable?

The price and inventory of IRFS52N15DTRRP are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFS52N15DTRRP is usually 5 days.

3.What payment methods are accepted for IRFS52N15DTRRP?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFS52N15DTRRP transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFS52N15DTRRP?

IRFS52N15DTRRP orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFS52N15DTRRP order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFS52N15DTRRP?

For technical support, including IRFS52N15DTRRP datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFS52N15DTRRP requirements.

6.How does Aetrix verify that IRFS52N15DTRRP is sourced from the original manufacturer or authorized distributors?

All IRFS52N15DTRRP products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFS52N15DTRRP meets industry standards.

7.What is the process for return or replacement of IRFS52N15DTRRP?

All IRFS52N15DTRRP units undergo pre-shipment inspection (PSI). If there is an issue with IRFS52N15DTRRP, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFS52N15DTRRP part is unused and in its original packaging.

Return procedure for IRFS52N15DTRRP:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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