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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFS5615PBF

Name: IRFS5615PBF
Brand: Infineon Technologies
SKU: IRFS5615PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFS5615PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRFS5615PBF.pdf

Description:: MOSFET N-CH 150V 33A D2PAK

Quantity:: RFQ Add To RFQ list

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Inventory:4,903

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Product details

Overview

IRFS5615PBF from Infineon Technologies (formerly International Rectifier) is a 150 V, 33 A N-channel enhancement-mode HEXFET® Power MOSFET in TO-262 (D²PAK) package, optimized for Class-D audio amplifier half-bridge output stages. It delivers 300 W per channel into 4 Ω loads, features 34.5 mΩ R_DS(on) @ 10 V, 26 nC total gate charge, and 175 °C maximum junction temperature.

For engineers reviewing the IRFS5615PBF datasheet, IRFS5615PBF pinout, IRFS5615PBF application, or IRFS5615PBF equivalent, this device is selected for high-efficiency, low-THD, low-EMI audio switching where body-diode reverse recovery (Q_rr = 312–468 nC), internal gate resistance (R_G(int) = 2.7 Ω), and avalanche ruggedness are critical design parameters.

Technical Context

This MOSFET employs trench-gate silicon process technology to minimize conduction and switching losses simultaneously. Its low Q_sw (11 nC) and low Q_rr reduce crossover distortion and EMI generation during high-frequency PWM switching in Class-D amplifiers operating up to several hundred kHz.

The device integrates a fast, low-loss intrinsic body diode with t_rr = 80–120 ns and exhibits rated repetitive avalanche capability (E_AS = 450 mJ at T_J = 25 °C). Thermal design is supported by R_θJC = 1.045 °C/W and 175 °C T_J(max), enabling sustained high-power operation in compact heatsinked layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	150 V - Withstands rail voltages up to ±75 V in bridge-tied load (BTL) configurations without breakdown.
R_DS(on) @ 10 V	34.5 mΩ typ. - Enables <1.5 W conduction loss at 21 A DC current, critical for thermal management in high-power audio stages.
Q_g	26 nC typ. - Reduces gate drive power and allows use of lower-cost, lower-current gate drivers in multi-MOSFET amplifier designs.
Q_rr	312–468 nC - Minimizes voltage spikes and audible distortion during body-diode commutation in half-bridge dead-time transitions.
T_J(max)	175 °C - Supports continuous operation under high ambient temperatures and transient overloads without derating penalties.
R_θJC	1.045 °C/W - Enables direct mounting to heatsinks with predictable junction-to-case thermal path for accurate thermal modeling.
I_D @ T_C = 25 °C	33 A - Sustains peak channel currents required for 300 W into 4 Ω in half-bridge topology with margin.

Pinout & Package

IRFS5615PBF uses the TO-262 (D²PAK) surface-mount package with isolated drain tab for direct heatsinking. The three terminals are arranged in standard G-D-S order on the lead frame.

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control input	Receives PWM signal; low R_G(int) = 2.7 Ω enables fast, controlled turn-on/turn-off with minimal ringing.
Drain (D)	High-side switch node	Connected to positive rail in high-side switch or mid-point in half-bridge; electrically tied to exposed metal tab for thermal conduction.
Source (S)	Power return / reference	Serves as common return for gate drive and load current; low-inductance layout essential to suppress shoot-through risk.

Key Features

Feature	Design Value
Optimized Q_g/Q_sw ratio	Q_sw = 11 nC (Q_gs2 + Q_gd) ensures fast, low-loss switching transitions critical for THD reduction in >200 kHz PWM.
Low Q_rr body diode	Q_rr = 312–468 nC minimizes reverse recovery energy dissipation and associated voltage overshoot in BTL outputs.
Repetitive avalanche rating	E_AR = 120 mJ @ 1% duty cycle supports reliable operation during inductive load transients without external snubbers.
High-temperature ruggedness	175 °C T_J(max) and stable R_DS(on) up to 150 °C enable robust performance in sealed enclosures or automotive audio environments.

Applications

Home Audio Amplifiers

Professional PA Systems

Use Scenario: High-fidelity stereo amplifiers delivering 200–500 W/channel into 4–8 Ω speakers using half-bridge Class-D topology.

IC Role / Device Role / Timing Role: Primary output switching device in PWM power stage; handles bidirectional current flow during dead-time commutation.

Use Value: Low Q_rr and tight R_DS(on) tolerance reduce audible distortion and thermal stress, enabling fanless chassis designs.

Use Scenario: Multi-channel touring-grade loudspeaker processors with integrated 1–2 kW per channel amplification modules.

IC Role / Device Role / Timing Role: Half-bridge high-side and low-side switch; operates at 300–500 kHz carrier frequency with precise dead-time control.

Use Value: Repetitive avalanche capability eliminates need for external clamping circuits during speaker cable fault events.

Automotive Infotainment

Active Subwoofer Modules

Use Scenario: Compact, high-efficiency OEM or aftermarket head-unit amplifiers powering door speakers and tweeters.

IC Role / Device Role / Timing Role: Output stage MOSFET in dual half-bridge configuration driving 4 Ω loads with supply rails up to 14.4 V nominal.

Use Value: 175 °C T_J(max) and low R_DS(on) allow operation in confined dash-mounted enclosures without thermal throttling.

Use Scenario: Sealed active subwoofer cabinets requiring 300–1000 W RMS into 2–4 Ω low-impedance voice coils.

IC Role / Device Role / Timing Role: High-current switching element in single-ended or bridged output stage handling high peak currents (>50 A).

Use Value: 33 A continuous current rating and 1.045 °C/W R_θJC support direct heatsink mounting for sustained bass transients without thermal shutdown.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Class-D audio MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW48N60M2	600 V V_DS, 48 A I_D, higher R_DS(on) (65 mΩ), slower Q_rr (650 nC)	Better suited for high-voltage SMPS; excessive voltage rating adds gate drive complexity and cost in 150 V audio rails.	Select only if system requires >300 V blocking or shares platform with HV power supplies.
IXFH30N60P	600 V V_DS, 30 A I_D, R_DS(on) = 120 mΩ, Q_rr = 520 nC, no specified avalanche rating	Lacks Class-D-optimized Q_rr and thermal ruggedness; intended for general-purpose switching, not audio fidelity-critical paths.	Avoid in THD-sensitive designs; acceptable only for non-audio, low-frequency motor drive reuse.

Compared with STW48N60M2 and IXFH30N60P, IRFS5615PBF provides superior THD performance due to its 312–468 nC Q_rr and 34.5 mΩ R_DS(on), while its 175 °C T_J(max) and documented repetitive avalanche capability ensure reliability in thermally constrained audio enclosures without over-engineering voltage margins.

Availability

IRFS5615PBF is available at Aetrix Electronics and suitable for home audio amplifiers, professional PA systems, and automotive infotainment platforms requiring stable component supply and long-term production continuity.

Supply support for IRFS5615PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon-based power devices and wide-bandgap technologies.

This MOSFET belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-fidelity switching in audio amplification, UPS, and industrial motor control applications demanding low distortion and thermal resilience.

FAQ

What is the maximum safe operating frequency for IRFS5615PBF in Class-D audio applications?

IRFS5615PBF is characterized for reliable operation up to 500 kHz, supported by its 11 nC Q_sw, 9.0 nC Q_gd, and 2.7 Ω R_G(int). At 300 kHz, typical turn-on delay (t_d(on)) is 8.9 ns and rise time (t_r) is 23.1 ns-enabling clean PWM edges with minimal overlap loss. Higher frequencies require careful PCB layout to manage parasitic inductance.

Does IRFS5615PBF require a gate resistor for stability in half-bridge configurations?

Yes-a discrete gate resistor (typically 5–15 Ω) is recommended between driver output and gate terminal to dampen ringing caused by trace inductance and internal R_G(int) interaction. The datasheet specifies R_G(int) = 2.7 Ω, but external resistance controls dV/dt and prevents spurious turn-on during high di/dt transitions in bridge legs.

How does the body diode performance impact THD in Class-D amplifiers?

The body diode's Q_rr (312–468 nC) and t_rr (80–120 ns) directly affect crossover distortion: higher Q_rr causes larger reverse recovery current spikes that couple into gate drive and output filters. IRFS5615PBF's low Q_rr reduces these spikes, lowering measured THD+N by up to 0.02% compared to standard MOSFETs in identical 1 kHz test conditions.

Can IRFS5615PBF be used in synchronous rectification topologies?

No-it is not optimized for synchronous rectification. Its body diode forward voltage (V_SD = 1.3 V typ.) and Q_rr are tuned for controlled commutation in Class-D switching, not low-V_F conduction. For SR applications, dedicated low-V_F, low-Q_rr MOSFETs like IRF7832 or SiR626DP are preferred due to their asymmetric die structure and tighter V_SD specs.

IRFS5615PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 33A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 42mOhm @ 21A, 10V

Vgs(th) (Max) @ Id:: 5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 40 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1750 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 144W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRFS5615PBF FAQ

1.How can I place an order for IRFS5615PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFS5615PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFS5615PBF reliable?

The price and inventory of IRFS5615PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFS5615PBF is usually 5 days.

3.What payment methods are accepted for IRFS5615PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFS5615PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFS5615PBF?

IRFS5615PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFS5615PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFS5615PBF?

For technical support, including IRFS5615PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFS5615PBF requirements.

6.How does Aetrix verify that IRFS5615PBF is sourced from the original manufacturer or authorized distributors?

All IRFS5615PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFS5615PBF meets industry standards.

7.What is the process for return or replacement of IRFS5615PBF?

All IRFS5615PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFS5615PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFS5615PBF part is unused and in its original packaging.

Return procedure for IRFS5615PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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