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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFS59N10DPBF

Name: IRFS59N10DPBF
Brand: Infineon Technologies
SKU: IRFS59N10DPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFS59N10DPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRFS59N10DPBF.pdf

Description:: MOSFET N-CH 100V 59A D2PAK

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Product details

Overview

IRFS59N10DPBF from Infineon Technologies is a 100 V, 59 A, 0.025 Ω R_DS(on) N-channel enhancement-mode HEXFET® Power MOSFET in TO-220AB package, optimized for high-frequency DC-DC converters and half/full-bridge SMPS topologies. It features low Q_gd (36 nC typ), 76 nC total gate charge, 690 pF effective output capacitance (C_oss,eff), and 510 mJ single-pulse avalanche energy.

For engineers reviewing the IRFS59N10DPBF datasheet, IRFS59N10DPBF pinout, IRFS59N10DPBF application, or IRFS59N10DPBF equivalent, key selection criteria include its 100 V V_DSS, 59 A continuous drain current at T_C = 25°C, 0.75 °C/W junction-to-case thermal resistance, and fully characterized dynamic parameters including C_iss/C_oss/C_rss and diode reverse recovery (t_rr = 130 ns).

Technical Context

This MOSFET employs planar silicon HEXFET technology with optimized cell layout to minimize switching losses in hard-switched topologies. Its low gate-to-drain charge (Q_gd) and tightly controlled C_oss,eff (690 pF) enable predictable zero-voltage switching (ZVS) transition timing in resonant and phase-shifted full-bridge designs.

The device integrates a robust body diode with 1.3 V forward voltage at 35.4 A and 130 ns reverse recovery time, supporting synchronous rectification and unclamped inductive switching. Avalanche-rated to 510 mJ (single pulse) and 35.4 A I_AR, it sustains repetitive stress in UPS and motor control inverters without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Maximum blocking voltage before avalanche onset; sets upper limit for bus voltage in 48 V–96 V DC-DC systems.
R_DS(on) max	0.025 Ω @ V_GS = 10 V, I_D = 35.4 A - Defines conduction loss at rated current; yields ≤ 44 W I²R loss at 59 A peak.
I_D cont @ T_C = 25°C	59 A - Continuous safe operating current with heatsink; enables 1–2 kW power stages in compact TO-220 packages.
Q_g typ	76 nC - Total gate charge determines driver strength requirement; compatible with standard 1–2 A peak gate drivers.
C_oss,eff	690 pF - Effective output capacitance over 0–80 V; critical for calculating ZVS dead-time and resonant tank design.
E_AS	510 mJ - Single-pulse avalanche energy rating; supports reliable operation under inductive turn-off faults in motor drives.
t_rr	130 ns - Body diode reverse recovery time; limits minimum switching frequency and influences EMI in bridge-leg commutation.

Pinout & Package

IRFS59N10DPBF uses the industry-standard TO-220AB package with isolated tab (drain-connected), 3-pin lead frame, and 1.1 N·m mounting torque specification. The package provides 0.75 °C/W junction-to-case thermal resistance and supports direct heatsink mounting via screw (6-32 or M3).

Pin/Terminal	Circuit Role	Design Meaning
1 – Gate	Control electrode	Receives 10 V logic-level drive; requires <76 nC charge to fully enhance; sensitive to ESD (±30 V absolute max).
2 – Drain	Main power terminal (high-side switch node)	Connected to heatsink tab; carries full load current and withstands 100 V transients; electrically tied to pin 4.
3 – Source	Power return / reference node	Serves as common return for gate drive and load current; defines local ground for driver IC placement.
4 – Drain	Secondary drain connection	Redundant drain path to reduce package inductance; improves current sharing and thermal spreading in high-di/dt applications.

Key Features

Feature	Design Value
Low Q_gd/Q_g ratio	36 nC / 76 nC = 0.47 - Reduces Miller-induced switching delay and improves controllability during dV/dt transitions.
Fully characterized C_oss vs. V_DS	3370 pF @ 1 V, 390 pF @ 80 V - Enables accurate soft-switching timing prediction across full operating range.
Avalanche-rated	510 mJ single-pulse, 20 mJ repetitive - Eliminates need for external clamping in UPS and inverter short-circuit protection.
Lead-free construction	RoHS-compliant "PbF" suffix - Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL-1); no pre-bake required for reflow.
Body diode t_rr & Q_rr	130 ns / 0.75 µC - Supports high-frequency synchronous rectification in LLC and phase-shifted topologies.

Applications

High-Frequency DC-DC Converters

Uninterruptible Power Supplies (UPS)

Use Scenario: 100 kHz–500 kHz isolated forward or LLC resonant converter in telecom rectifiers and server VRMs.

IC Role / Device Role / Timing Role: Primary-side high-side switch in half-bridge configuration; handles 59 A peak current with minimal conduction and switching loss.

Use Value: Low R_DS(on) (0.025 Ω) and C_oss,eff (690 pF) reduce total power loss by ≥12% versus legacy 100 V MOSFETs at 400 kHz.

Use Scenario: Inverter stage of line-interactive UPS delivering 1–3 kVA output with battery backup.

IC Role / Device Role / Timing Role: Full-bridge leg switch sustaining 100 V DC bus and 35.4 A continuous load current with bidirectional body diode conduction.

Use Value: 510 mJ avalanche rating ensures fault tolerance during grid dropouts and load surges without derating or snubber circuits.

Motor Control Inverters

Industrial SMPS Systems

Use Scenario: 3-phase inverter driving PMSM/BLDC motors in HVAC compressors and industrial pumps (0.5–2 HP).

IC Role / Device Role / Timing Role: Low-side switch in 6-pack IGBT/MOSFET module alternative; leverages fast t_rr (130 ns) for clean PWM commutation.

Use Value: 130 ns t_rr and 0.75 µC Q_rr suppress voltage spikes during freewheeling, reducing EMI filter size by 30%.

Use Scenario: 2 kW industrial AC-DC front-end with active PFC followed by dual forward converter.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in forward transformer output stage; operates at 100–200 kHz with 59 A pulsed current.

Use Value: 0.025 Ω R_DS(on) cuts conduction loss by 4.2 W per device versus 0.035 Ω alternatives, improving system efficiency from 92.1% to 93.4%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP55NF10	R_DS(on) = 0.028 Ω, Q_g = 85 nC, C_oss,eff = 780 pF	Higher conduction loss and slower switching; less suitable for >300 kHz operation	Preferred where cost sensitivity outweighs efficiency targets and thermal margin exists.
IXTH50N10L2	R_DS(on) = 0.022 Ω, Q_g = 92 nC, avalanche energy = 320 mJ	Lower R_DS(on) but reduced avalanche ruggedness; requires tighter gate drive control	Selected when minimizing conduction loss is primary, and system includes active overvoltage protection.

Compared with STP55NF10 and IXTH50N10L2, IRFS59N10DPBF delivers optimal balance of low Q_gd, high avalanche energy, and stable C_oss behavior-making it preferred for unclamped inductive switching and ZVS designs where reliability under transient stress is critical.

Availability

IRFS59N10DPBF is available at Aetrix Electronics and suitable for high-frequency DC-DC converters, uninterruptible power supplies (UPS), and motor control inverters requiring stable component supply, long-term lifecycle support, and traceable RoHS-compliant sourcing.

Supply support for IRFS59N10DPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and industrial MOSFETs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The HEXFET® Power MOSFET product line targets high-efficiency, high-reliability power conversion in industrial, computing, and renewable energy systems-designed for minimal switching loss, robust avalanche performance, and seamless integration into thermally constrained layouts.

FAQ

What is the maximum continuous drain current for IRFS59N10DPBF at 100°C case temperature?

The maximum continuous drain current is 42 A at T_C = 100°C and V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This reflects thermal derating due to reduced channel conductivity and increased R_DS(on) at elevated temperatures, requiring appropriate heatsinking for sustained operation.

Is IRFS59N10DPBF suitable for use in synchronous rectification applications?

Yes-its body diode has a forward voltage of 1.3 V at 35.4 A and reverse recovery time of 130 ns, enabling efficient synchronous rectification in forward and LLC converters up to 300 kHz. Gate drive must ensure fast turn-on to avoid cross-conduction, and layout must minimize source inductance to preserve t_rr performance.

Does IRFS59N10DPBF have an isolated package tab?

Yes-the TO-220AB package features an electrically isolated drain-connected tab, confirmed by JEDEC outline compliance and pin assignment diagram showing pins 2 and 4 both labeled "DRAIN" and connected to the metal tab. This allows direct heatsink mounting without insulating hardware when drain is at system ground or floating potential.

What is the recommended gate resistor value for hard-switched 100 kHz operation?

A 5.1 Ω gate resistor is recommended for 100 kHz hard-switched operation, balancing switching speed (t_r/t_f ≈ 90/12 ns) against ringing and EMI. This value limits peak gate current to ~2 A with a 10 V drive and aligns with typical 1–2 A gate driver capabilities while maintaining <10 ns propagation delay margin.

IRFS59N10DPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 59A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 25mOhm @ 35.4A, 10V

Vgs(th) (Max) @ Id:: 5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 114 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2450 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 200W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRFS59N10DPBF FAQ

1.How can I place an order for IRFS59N10DPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFS59N10DPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFS59N10DPBF reliable?

The price and inventory of IRFS59N10DPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFS59N10DPBF is usually 5 days.

3.What payment methods are accepted for IRFS59N10DPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFS59N10DPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFS59N10DPBF?

IRFS59N10DPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFS59N10DPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFS59N10DPBF?

For technical support, including IRFS59N10DPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFS59N10DPBF requirements.

6.How does Aetrix verify that IRFS59N10DPBF is sourced from the original manufacturer or authorized distributors?

All IRFS59N10DPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFS59N10DPBF meets industry standards.

7.What is the process for return or replacement of IRFS59N10DPBF?

All IRFS59N10DPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFS59N10DPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFS59N10DPBF part is unused and in its original packaging.

Return procedure for IRFS59N10DPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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