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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFS59N10DTRLP

Name: IRFS59N10DTRLP
Brand: Infineon Technologies
SKU: IRFS59N10DTRLP
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFS59N10DTRLP

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRFS59N10DTRLP.pdf

Description:: MOSFET N-CH 100V 59A D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFS59N10DTRLP from Infineon Technologies is a 100V, 59A N-channel enhancement-mode Power MOSFET in TO-220AB package, optimized for high-frequency SMPS topologies including half-bridge and full-bridge DC-DC converters. It features R_DS(on) = 0.025Ω (max), Q_gd = 36–54 nC, C_oss(eff) = 690 pF, and fully characterized avalanche capability (E_AS = 510 mJ), enabling efficient hard-switched power conversion in UPS and motor control inverters.

For engineers reviewing the IRFS59N10DTRLP datasheet, IRFS59N10DTRLP pinout, IRFS59N10DTRLP application, or IRFS59N10DTRLP equivalent, key selection criteria include gate charge profile (Q_g = 76–114 nC), diode reverse recovery (Q_rr = 0.75–1.1 µC), thermal resistance (R_θJC = 0.75°C/W), and lead-free compliance per JEDEC TO-220AB outline.

Technical Context

This HEXFET device employs planar V-groove silicon technology to achieve low R_DS(on) and minimized gate-to-drain charge (Q_gd), directly reducing switching losses in hard-switched topologies. Its fully characterized C_oss(eff) = 690 pF over 0–80V enables accurate snubberless design in resonant and quasi-resonant converters.

The integrated body diode supports synchronous rectification and unclamped inductive switching with validated avalanche performance (I_AR = 35.4 A, E_AS = 510 mJ). Dynamic parameters-including t_r = 90 ns, t_f = 12 ns, and dv/dt rating of 3.3 V/ns-are specified at T_J = 25°C with V_DD = 50V, I_D = 35.4A, and R_G = 2.5Ω.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Maximum blocking voltage before avalanche onset; sets upper limit for bus voltage in 48V/60V industrial DC systems.
R_DS(on) max	0.025 Ω - Conduction loss of ≤5.2 W at 35.4 A; enables high-current operation without forced cooling in compact SMPS designs.
Q_g	76–114 nC - Total gate charge determines driver strength requirement; impacts gate drive power and turn-on timing precision.
C_oss(eff)	690 pF - Effective output capacitance used for zero-voltage switching (ZVS) timing calculations in phase-shifted full-bridge converters.
E_AS	510 mJ - Single-pulse avalanche energy rating allows safe operation under transient overvoltage conditions without external clamping.
t_r/t_f	90 ns / 12 ns - Fast switching transitions reduce overlap loss in PWM stages; supports >500 kHz operation with appropriate gate drive.
R_θJC	0.75 °C/W - Junction-to-case thermal resistance enables direct heatsink mounting; supports 200 W continuous dissipation with adequate thermal interface.

Pinout & Package

IRFS59N10DTRLP uses the JEDEC-standard TO-220AB package with isolated tab (drain-connected), rated for 10 lbf·in mounting torque and 300°C soldering (1.6 mm from case). The drain is internally connected to pins 2 and 4; gate and source are on pins 1 and 3 respectively.

Pin/Terminal	Circuit Role	Design Meaning
1 - GATE	Control electrode	Receives 10 V logic-level drive; threshold voltage 3.0–5.5 V ensures compatibility with standard PWM controllers.
2 - DRAIN	High-side power terminal	Internally tied to metal tab; must be electrically isolated from heatsink unless system ground reference permits.
3 - SOURCE	Power return path	Serves as local ground reference for gate drive; carries full load current and body diode conduction current.
4 - DRAIN	Secondary drain connection	Redundant drain pin improves current sharing and thermal spreading; required for full-rated current handling in TO-220AB layout.

Key Features

Feature	Design Value
Low Q_gd/Q_g ratio	47–48% - Reduces Miller-induced switching delay and improves controllability during hard commutation.
Fully characterized C_oss(eff)	690 pF across 0–80 V - Enables precise ZVS timing prediction without iterative measurement or estimation.
Lead-free construction	Pb-free plating per JEDEC J-STD-609 - Complies with RoHS and ELV directives; no tin whisker risk in automotive-grade assembly.
Avalanche-rated operation	E_AS = 510 mJ, I_AR = 35.4 A - Eliminates need for external RCD snubbers in flyback or LLC primary switches under fault conditions.
Optimized body diode	Q_rr = 0.75–1.1 µC, t_rr = 130–200 ns - Minimizes reverse recovery loss in synchronous rectifier and bidirectional converter applications.

Applications

Server PSU Half-Bridge

Industrial UPS Inverter

Use Scenario: Primary-side switching in 1U 2 kW telecom/server PSUs using phase-shifted full-bridge topology.

IC Role / Device Role / Timing Role: High-side and low-side switch in symmetric bridge leg; handles 50–200 kHz switching with ZVS-assisted turn-on.

Use Value: Low C_oss(eff) and fast t_f enable reliable ZVS across 20–100% load range, reducing total system loss by ≥3.2 W vs. legacy 100V MOSFETs.

Use Scenario: Bidirectional DC-AC inverter stage of 3 kVA industrial uninterruptible power supply.

IC Role / Device Role / Timing Role: Output bridge switch operating in 60 Hz–20 kHz PWM mode; conducts both forward and reverse current via body diode during dead-time.

Use Value: Low Q_rr and soft-recovery diode minimize shoot-through risk and EMI generation during polarity reversal at line frequency.

Motor Control Full-Bridge

EV Onboard Charger PFC Stage

Use Scenario: 48 V BLDC motor drive in automated guided vehicle (AGV) with regenerative braking.

IC Role / Device Role / Timing Role: Four-quadrant switching element in H-bridge; sustains repetitive avalanche during inductive kickback from motor winding collapse.

Use Value: Validated E_AR = 20 mJ and I_AR = 35.4 A allow robust operation without snubber circuits, simplifying PCB layout and BOM.

Use Scenario: Boost switch in active PFC front-end of 6.6 kW EV onboard charger (OBC).

IC Role / Device Role / Timing Role: High-duty-cycle switching device operating at 65–130 kHz; conducts continuous 35.4 A RMS current with peak 236 A pulsed loads.

Use Value: R_DS(on) = 0.025 Ω limits conduction loss to ≤31 W at full load, enabling natural convection cooling in sealed OBC enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 100V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP55NF10	R_DS(on) = 0.028 Ω; Q_g = 85 nC; C_oss(eff) not published	Lacks full C_oss(eff) characterization; lower avalanche rating (E_AS = 320 mJ)	Acceptable where ZVS timing margin is relaxed and avalanche stress is minimal.
IXTH50N10L2	R_DS(on) = 0.022 Ω; Q_g = 105 nC; TO-247 package	Higher thermal mass but requires larger footprint; no redundant drain pin	Preferred for higher-power derating or when board space allows TO-247 mechanical stability.

Compared with STP55NF10 and IXTH50N10L2, IRFS59N10DTRLP offers superior C_oss(eff) predictability for ZVS design, balanced Q_g/R_DS(on) trade-off, and TO-220AB-compatible form factor-making it optimal for space-constrained, high-frequency SMPS requiring repeatable avalanche behavior.

Availability

IRFS59N10DTRLP is available at Aetrix Electronics and suitable for server power supplies, industrial UPS systems, motor control inverters, and EV onboard chargers requiring stable component supply and long-term manufacturability.

Supply support for IRFS59N10DTRLP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and industrial sensors, with global manufacturing and R&D centers.

This device belongs to the HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency switched-mode power conversion in industrial, computing, and renewable energy systems.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The maximum continuous drain current (I_D) at T_C = 100°C is 42 A with V_GS = 10 V. This rating accounts for thermal derating based on R_θJC = 0.75°C/W and assumes proper heatsinking. Operation above this current requires pulse-width limitation or forced-air cooling to maintain junction temperature below 175°C.

Does IRFS59N10DTRLP support gate drive from 5 V logic controllers?

No-its gate threshold voltage (V_GS(th)) ranges from 3.0 V to 5.5 V, and R_DS(on) is specified only at V_GS = 10 V. Driving with 5 V risks incomplete turn-on and excessive conduction loss. A minimum 10 V gate drive with ≥±30 V rating is required for full performance and reliability.

Is the TO-220AB package electrically isolated?

No-the metal tab (pins 2 and 4) is internally connected to the drain. Electrical isolation from the heatsink must be achieved using insulating pads or shoulder washers. Failure to isolate will short the drain to system ground, causing immediate failure.

How is the effective output capacitance (C_oss(eff)) measured and why does it matter?

C_oss(eff) = 690 pF is measured across V_DS = 0–80 V with V_GS = 0 V and f = 1 MHz, representing energy-equivalent capacitance for ZVS transition modeling. Unlike static C_oss, it enables accurate calculation of resonant period and required dead time in soft-switching converters.

IRFS59N10DTRLP Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 59A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 25mOhm @ 35.4A, 10V

Vgs(th) (Max) @ Id:: 5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 114 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2450 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 200W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRFS59N10DTRLP FAQ

1.How can I place an order for IRFS59N10DTRLP through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFS59N10DTRLP on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFS59N10DTRLP reliable?

The price and inventory of IRFS59N10DTRLP are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFS59N10DTRLP is usually 5 days.

3.What payment methods are accepted for IRFS59N10DTRLP?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFS59N10DTRLP transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFS59N10DTRLP?

IRFS59N10DTRLP orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFS59N10DTRLP order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFS59N10DTRLP?

For technical support, including IRFS59N10DTRLP datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFS59N10DTRLP requirements.

6.How does Aetrix verify that IRFS59N10DTRLP is sourced from the original manufacturer or authorized distributors?

All IRFS59N10DTRLP products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFS59N10DTRLP meets industry standards.

7.What is the process for return or replacement of IRFS59N10DTRLP?

All IRFS59N10DTRLP units undergo pre-shipment inspection (PSI). If there is an issue with IRFS59N10DTRLP, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFS59N10DTRLP part is unused and in its original packaging.

Return procedure for IRFS59N10DTRLP:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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