Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFS59N10DTRRP

Name: IRFS59N10DTRRP
Brand: Infineon Technologies
SKU: IRFS59N10DTRRP
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRFS59N10DTRRP

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRFS59N10DTRRP.pdf

Description:: MOSFET N-CH 100V 59A D2PAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:6,034

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRFS59N10DTRRP from Infineon Technologies is a 100 V, 59 A N-channel enhancement-mode Power MOSFET in TO-220AB package, optimized for high-frequency DC-DC converters and half/full-bridge SMPS topologies. It features 0.025 Ω R_DS(on) at V_GS = 10 V, 76 nC total gate charge, and fully characterized C_oss (690 pF effective) to simplify snubberless design in telecom power supplies.

For engineers reviewing the IRFS59N10DTRRP datasheet, IRFS59N10DTRRP pinout, IRFS59N10DTRRP application, or IRFS59N10DTRRP equivalent, key selection criteria include avalanche energy rating (510 mJ), diode reverse recovery time (130 ns typ.), and thermal resistance (R_θJC = 0.75 °C/W), critical for high-efficiency, high-reliability switch-mode power conversion.

Technical Context

This HEXFET device uses planar stripe cell structure with low Q_gd/Q_g ratio (36/76 nC) to minimize Miller-induced switching delay and improve hard-switching efficiency. Its fully characterized C_oss profile-including 3370 pF at V_DS = 1.0 V and 390 pF at V_DS = 80 V-enables accurate zero-voltage switching (ZVS) boundary prediction in resonant converters.

The integrated body diode exhibits 1.3 V forward voltage at 35.4 A and 25 °C, with 0.75 µC reverse recovery charge and 100 A/µs di/dt capability, supporting synchronous rectification and unclamped inductive switching up to 35.4 A avalanche current.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Withstands full bus voltage in 48 V input DC-DC systems with margin for transient spikes.
R_DS(on) max	0.025 Ω @ V_GS = 10 V - Enables <1.5 W conduction loss at 35.4 A, reducing heatsink requirements.
I_D cont @ T_C = 25°C	59 A - Supports high-current primary-side switching in 500–1000 W telecom PSUs.
Q_g typ.	76 nC - Determines gate driver power demand; compatible with common 1–2 A peak drivers.
C_oss,eff	690 pF - Used directly in ZVS timing calculations; reduces need for external snubbers.
E_AS	510 mJ - Sustains single-pulse inductive energy without failure in hard-switched bridge legs.
R_θJC	0.75 °C/W - Allows direct mounting to heatsink; enables 150 °C junction operation at 120 W dissipation.

Pinout & Package

IRFS59N10DTRRP is housed in a TO-220AB package with isolated tab (drain-connected), standard for high-power discrete MOSFETs requiring mechanical mounting and thermal interface to heatsinks.

Pin/Terminal	Circuit Role	Design Meaning
1 – GATE	Control electrode	Receives 10 V logic-level drive; requires <76 nC charge for full enhancement.
2 – DRAIN	Main current path anode	Connected to high-side rail or transformer primary; electrically tied to metal tab.
3 – SOURCE	Main current path cathode	Reference node for gate drive; carries full load current and body diode return path.
4 – DRAIN	Secondary drain connection	Redundant drain terminal for improved current sharing and lower package inductance in high-di/dt layouts.

Key Features

Feature	Design Value
Low Q_gd/Q_g ratio	0.47 (36/76 nC) - Reduces Miller plateau duration, enabling faster turn-off and higher frequency operation.
Fully characterized C_oss vs. V_DS	3370 pF @ 1 V → 390 pF @ 80 V - Enables precise soft-switching timing and loss modeling across operating range.
Enhanced avalanche ruggedness	510 mJ single-pulse E_AS - Eliminates need for external clamping in flyback or LLC primary switches.
Lead-free construction	RoHS-compliant Pb-free plating - Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL-1) for reflow compatibility.

Applications

Telecom DC-DC Converters

Industrial UPS Inverters

Use Scenario: 48 V input, 12 V output, 800 W half-bridge DC-DC converter in 19-inch rack power supply.

IC Role / Device Role / Timing Role: Primary-side high-side switch operating at 200–500 kHz with synchronous rectification on secondary.

Use Value: Low R_DS(on) and C_oss,eff reduce conduction and switching losses, achieving >95% peak efficiency at full load.

Use Scenario: 3-phase 400 VAC online UPS with IGBT-driven inverter stage and battery backup.

IC Role / Device Role / Timing Role: High-frequency auxiliary SMPS supplying gate drivers and control logic from battery bus.

Use Value: 510 mJ avalanche rating ensures robustness during grid fault transients without derating.

Motor Control Half-Bridge

Server VRM High-Side Switch

Use Scenario: 24–48 V BLDC motor controller for industrial automation with 30 A phase current.

IC Role / Device Role / Timing Role: Upper-leg switch in three-phase inverter leg, commutated at ≤20 kHz with PWM dead-time control.

Use Value: Fast 130 ns diode trr and low Q_rr minimize shoot-through risk and body diode conduction loss during commutation.

Use Scenario: 12 V input, 1.2 V/150 A multiphase buck converter for AI accelerator GPU power delivery.

IC Role / Device Role / Timing Role: High-side switch in 6-phase interleaved VRM, switching at 1 MHz with adaptive gate drive.

Use Value: 76 nC Q_g allows efficient drive with low-side FET-integrated gate drivers, minimizing layout parasitics.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP55NF10	R_DS(on) = 0.028 Ω; Q_g = 85 nC; C_oss,eff not specified	Lacks published C_oss characterization - less suitable for ZVS design verification	Prefer when cost sensitivity outweighs soft-switching optimization needs
IXTH50N10L2	R_DS(on) = 0.022 Ω; Q_g = 105 nC; avalanche rated to 420 mJ	Higher gate charge increases driver loss; lower E_AS limits unclamped inductive stress margin	Choose only if lower R_DS(on) justifies added gate drive complexity and reduced ruggedness

Compared with STP55NF10 and IXTH50N10L2, IRFS59N10DTRRP offers the best balance of low conduction loss, verified soft-switching parameters, and industry-leading avalanche energy-making it optimal for mission-critical, high-frequency SMPS where reliability and design predictability are prioritized over marginal R_DS(on) reduction.

Availability

IRFS59N10DTRRP is available at Aetrix Electronics and suitable for telecom power supplies, industrial UPS inverters, motor control half-bridges, and server VRMs requiring stable component supply and long-term manufacturing continuity.

Supply support for IRFS59N10DTRRP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to the HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switch-mode power conversion in telecom, computing, and industrial infrastructure applications.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFS59N10DTRRP supports 42 A continuous drain current at T_C = 100°C with V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220AB package and must be validated against actual board-level thermal resistance and ambient conditions.

Is the body diode suitable for synchronous rectification?

Yes-the body diode has 1.3 V forward voltage at 35.4 A and 25°C, 130 ns typical reverse recovery time, and 0.75 µC Q_rr, making it viable for synchronous rectification in medium-frequency (≤300 kHz) topologies where external Schottky replacement is impractical.

Does IRFS59N10DTRRP require gate resistors for safe switching?

Yes-a series gate resistor (typically 2.5–10 Ω) is required to control dv/dt and suppress oscillation during turn-on/off. The datasheet specifies switching times measured with R_G = 2.5 Ω, and omitting this resistor risks shoot-through, EMI, and gate driver overstress.

How does the effective output capacitance (C_oss,eff) differ from standard C_oss?

C_oss,eff = 690 pF is derived from energy integral (E = ½∫V·dQ) across V_DS = 0–80 V, unlike static C_oss measured at fixed bias. It directly predicts stored energy in hard-switched transitions and is used for ZVS timing and loss estimation-not for small-signal AC analysis.

IRFS59N10DTRRP Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 59A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 25mOhm @ 35.4A, 10V

Vgs(th) (Max) @ Id:: 5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 114 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2450 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 200W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRFS59N10DTRRP FAQ

1.How can I place an order for IRFS59N10DTRRP through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFS59N10DTRRP on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFS59N10DTRRP reliable?

The price and inventory of IRFS59N10DTRRP are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFS59N10DTRRP is usually 5 days.

3.What payment methods are accepted for IRFS59N10DTRRP?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFS59N10DTRRP transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFS59N10DTRRP?

IRFS59N10DTRRP orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFS59N10DTRRP order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFS59N10DTRRP?

For technical support, including IRFS59N10DTRRP datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFS59N10DTRRP requirements.

6.How does Aetrix verify that IRFS59N10DTRRP is sourced from the original manufacturer or authorized distributors?

All IRFS59N10DTRRP products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFS59N10DTRRP meets industry standards.

7.What is the process for return or replacement of IRFS59N10DTRRP?

All IRFS59N10DTRRP units undergo pre-shipment inspection (PSI). If there is an issue with IRFS59N10DTRRP, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFS59N10DTRRP part is unused and in its original packaging.

Return procedure for IRFS59N10DTRRP:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.