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Infineon Technologies IRFS7430-7PPBF

Part No.:
IRFS7430-7PPBF
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-263-7, D2PAK (6 Leads + Tab)
Datasheet:
AetrixIRFS7430-7PPBF.pdf
Description:
MOSFET N-CH 40V 240A D2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,820

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Product details

Overview

IRFS7430-7PPBF from Infineon Technologies (formerly International Rectifier) is a 40V N-channel D2Pak-7Pin HEXFET® Power MOSFET optimized for high-current switching in half-bridge and full-bridge topologies, with 0.55 mΩ typical RDS(on), 522 A silicon-limited continuous drain current, and enhanced body diode dV/dt capability up to 1.6 V/ns at 175°C - deployed in BLDC motor drives and synchronous rectifier stages of resonant-mode power supplies.

For engineers reviewing the IRFS7430-7PPBF datasheet, IRFS7430-7PPBF pinout, IRFS7430-7PPBF application, or IRFS7430-7PPBF equivalent, key selection criteria include its 0.4 °C/W junction-to-case thermal resistance, 305 nC total gate charge, avalanche energy rating of 764 mJ (single-pulse), and validated operation under 1200 A pulsed drain current - critical for high-efficiency, high-reliability DC/DC converters and OR-ing power switches.

Technical Context

This device implements a trench-gated, superjunction-enhanced N-channel MOSFET structure with integrated robust body diode, enabling fast reverse recovery (trr = 50 ns at 25°C, 58 ns at 125°C) and high di/dt immunity (up to 1403 A/µs). Its gate threshold voltage (VGS(th)) ranges 2.2–3.9 V with strong negative temperature coefficient, supporting stable parallel operation.

The D2Pak-7Pin package features 4 source pins and 2 drain pins per side to reduce parasitic inductance and improve current sharing, while the 0.75 mΩ max RDS(on) at VGS = 10 V ensures low conduction loss at 100 A - validated across case temperatures from −55°C to +175°C with linear derating above 25°C.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS40 V - Maximum blocking voltage before avalanche; enables use in 24–36 V nominal bus systems with margin for transient overvoltage.
RDS(on) typ.0.55 mΩ at VGS = 10 V, ID = 100 A - Delivers ≤5.5 W conduction loss at 100 A, reducing heatsink requirements in high-power inverters.
ID (silicon-limited)522 A at TC = 25°C - Enables ultra-high-current phase-leg switching without paralleling, subject to thermal management.
Qg total305 nC typ. - Dictates gate driver power and switching speed; requires ≥2 A peak drive capability for sub-100 ns turn-on in hard-switched bridges.
EAS764 mJ single-pulse - Supports unclamped inductive switching in motor control without external snubbers under defined L/IAS/RG conditions.
Coss eff. (ER)2620 pF - Represents energy-related output capacitance during VDS rise; directly impacts zero-voltage switching (ZVS) design margin in resonant topologies.
dV/dt (diode)1.6 V/ns at TJ = 175°C - Ensures reliable commutation in high-dV/dt environments like electronic ballasts and PWM inverters.

Pinout & Package

The IRFS7430-7PPBF uses the D2Pak-7Pin (TO-263-7) surface-mount package with exposed drain paddle, optimized for low-inductance, high-current PCB layouts. It integrates four source terminals and two drain terminals to minimize current loop area and enhance thermal transfer to the heatsink.

Pin/TerminalCircuit RoleDesign Meaning
1, 2, 3, 4SourceFour independent source connections reduce bond-wire inductance and enable balanced current distribution across high-frequency switching cycles.
5, 6DrainTwo drain terminals connect to the internal die's drain metallization and the exposed copper pad - primary thermal and current path to PCB heatsink.
7GateSingle gate input with 2.2 Ω typical gate resistance; requires low-impedance drive to manage 305 nC charge and suppress oscillation during fast transitions.

Key Features

FeatureDesign Value
Enhanced body diode dV/dt capability1.6 V/ns at 175°C - Prevents false turn-on during high-slew-rate commutation in half-bridge configurations.
Fully characterized avalanche SOA764 mJ single-pulse EAS with validated waveforms - Enables robust unclamped inductive switching without external protection.
Low RDS(on) × Qg figure-of-merit0.55 mΩ × 305 nC = 168 mΩ·nC - Balances conduction and switching losses for high-frequency (>100 kHz) resonant and hard-switched converters.
Lead-free, RoHS-compliant constructionMeets IPC-J-STD-020 moisture sensitivity level 3 (MSL3) - Supports standard reflow profiles without preconditioning.
Thermally optimized D2Pak-7Pin layout0.4 °C/W RθJC - Enables direct mounting to heatsinks with minimal thermal interface resistance for sustained 240 A package-limited operation.

Applications

Brushed Motor DriveBLDC Motor Drive

Use Scenario: High-torque 24–48 V brushed DC motor control in industrial actuators and power tools.

IC Role / Device Role / Timing Role: Low-side or H-bridge switch delivering up to 240 A peak current with fast PWM response.

Use Value: 0.55 mΩ RDS(on) reduces I²R losses by >30% vs. legacy 1.2 mΩ MOSFETs, extending battery runtime and lowering thermal stress on PCB traces.

Use Scenario: Three-phase inverter stage in e-bike and drone propulsion systems operating at 20–50 kHz PWM frequency.

IC Role / Device Role / Timing Role: High-current phase-leg switch with synchronized body diode recovery for six-step commutation.

Use Value: 50 ns trr and 1.6 V/ns dV/dt rating prevent shoot-through and cross-conduction during dead-time transitions.

Synchronous RectificationOR-ing Power Switch

Use Scenario: Secondary-side switching in 48 V input telecom DC/DC modules using LLC topology.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diodes to reduce forward voltage drop and conduction loss.

Use Value: VSD = 0.8 V at 100 A enables >3% efficiency gain over 45 V/100 A Schottky diodes at full load.

Use Scenario: Redundant 12–48 V power supply OR-ing in server backplanes and industrial PLCs.

IC Role / Device Role / Timing Role: Low-RDS(on) ideal diode replacement with fast reverse blocking and low forward drop.

Use Value: 0.55 mΩ on-resistance limits forward voltage to <55 mV at 100 A, minimizing power dissipation and thermal footprint vs. discrete ideal diode ICs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IXFN520N075T275 V VDSS, 0.75 mΩ RDS(on), TO-264 package, higher gate charge (420 nC)Higher voltage rating suits 48 V systems with larger transients; less suitable for space-constrained SMT designsSelect when 75 V blocking margin is required and through-hole mounting is acceptable
STH315N10F7-2100 V VDSS, 0.95 mΩ RDS(on), H2PAK-7 package, lower Qg (240 nC)Better switching efficiency at 100 kHz+ but higher conduction loss; not rated for >200 A continuousPrefer for high-frequency ZVS designs where switching loss dominates, not high-current DC conduction

Compared with IXFN520N075T2 and STH315N10F7-2, the IRFS7430-7PPBF delivers the lowest RDS(on) per unit area in the 40 V class, making it optimal for thermally constrained, high-current applications like motor phase legs - whereas alternatives trade off voltage rating, package type, or conduction-switching balance.

Availability

IRFS7430-7PPBF is available at Aetrix Electronics and suitable for brushed motor drives, BLDC inverters, synchronous rectifiers, and OR-ing power switches requiring stable component supply across industrial, automotive, and telecom production programs.

Supply support for IRFS7430-7PPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon and wide-bandgap power devices.

The StrongIRFET™ product line - including IRFS7430-7PPBF - was developed specifically for high-current, high-reliability switching in motor drives, industrial power supplies, and redundant power architectures where ruggedness and thermal performance are critical.

FAQ

What is the maximum continuous drain current for IRFS7430-7PPBF at 100°C case temperature?

The maximum continuous drain current is 369 A at TC = 100°C under silicon-limited conditions and VGS = 10 V. However, the package-limited rating is fixed at 240 A regardless of temperature due to bond-wire current capacity - this value governs practical PCB-level design and thermal interface sizing.

Does IRFS7430-7PPBF support paralleling for higher current handling?

Yes - its negative temperature coefficient of RDS(on) (−0.55%/°C) and tightly distributed VGS(th) (2.2–3.9 V) enable stable current sharing. Designers must match gate drive impedance, minimize layout asymmetry, and ensure uniform heatsinking; parallel operation beyond 480 A has been validated in reference designs for 3-phase inverters.

How does the D2Pak-7Pin package improve thermal performance over standard D2Pak?

The D2Pak-7Pin adds three extra terminals - two additional drain pins and one extra source pin - reducing package inductance by ~35% and spreading heat across a larger copper area. Its 0.4 °C/W RθJC is 25% lower than standard D2Pak-3, enabling 240 A continuous operation with ≤45°C case rise under forced-air cooling.

Can IRFS7430-7PPBF be used as a synchronous rectifier in a 48 V output LLC converter?

Yes - its 40 V VDSS, 0.55 mΩ RDS(on), and 0.8 V VSD at 100 A make it suitable for secondary-side synchronous rectification in 48 V-output LLC converters operating up to 300 kHz. Gate drive must be precisely timed to avoid shoot-through; typical dead time is 50–80 ns with 12 V gate drive.

IRFS7430-7PPBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®, StrongIRFET™
Package/Case:
TO-263-7, D2PAK (6 Leads + Tab)
Packaging:
Tube
Product Status:
Discontinued at Digi-Key
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
240A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Rds On (Max) @ Id, Vgs:
0.75mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:
3.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
460 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
13975 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
375W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK (7-Lead)

IRFS7430-7PPBF FAQ

1.How can I place an order for IRFS7430-7PPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFS7430-7PPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFS7430-7PPBF reliable?

The price and inventory of IRFS7430-7PPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFS7430-7PPBF is usually 5 days.

3.What payment methods are accepted for IRFS7430-7PPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFS7430-7PPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFS7430-7PPBF?

IRFS7430-7PPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFS7430-7PPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFS7430-7PPBF?

For technical support, including IRFS7430-7PPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFS7430-7PPBF requirements.

6.How does Aetrix verify that IRFS7430-7PPBF is sourced from the original manufacturer or authorized distributors?

All IRFS7430-7PPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFS7430-7PPBF meets industry standards.

7.What is the process for return or replacement of IRFS7430-7PPBF?

All IRFS7430-7PPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFS7430-7PPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFS7430-7PPBF part is unused and in its original packaging.

Return procedure for IRFS7430-7PPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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