Infineon Technologies IRFS7430-7PPBF
- Part No.:
- IRFS7430-7PPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-7, D2PAK (6 Leads + Tab)
- Datasheet:
-
IRFS7430-7PPBF.pdf
- Description:
- MOSFET N-CH 40V 240A D2PAK
- Quantity:
- Payment:

- Shipping:

Inventory:8,820
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Product details
Overview
IRFS7430-7PPBF from Infineon Technologies (formerly International Rectifier) is a 40V N-channel D2Pak-7Pin HEXFET® Power MOSFET optimized for high-current switching in half-bridge and full-bridge topologies, with 0.55 mΩ typical RDS(on), 522 A silicon-limited continuous drain current, and enhanced body diode dV/dt capability up to 1.6 V/ns at 175°C - deployed in BLDC motor drives and synchronous rectifier stages of resonant-mode power supplies.
For engineers reviewing the IRFS7430-7PPBF datasheet, IRFS7430-7PPBF pinout, IRFS7430-7PPBF application, or IRFS7430-7PPBF equivalent, key selection criteria include its 0.4 °C/W junction-to-case thermal resistance, 305 nC total gate charge, avalanche energy rating of 764 mJ (single-pulse), and validated operation under 1200 A pulsed drain current - critical for high-efficiency, high-reliability DC/DC converters and OR-ing power switches.
Technical Context
This device implements a trench-gated, superjunction-enhanced N-channel MOSFET structure with integrated robust body diode, enabling fast reverse recovery (trr = 50 ns at 25°C, 58 ns at 125°C) and high di/dt immunity (up to 1403 A/µs). Its gate threshold voltage (VGS(th)) ranges 2.2–3.9 V with strong negative temperature coefficient, supporting stable parallel operation.
The D2Pak-7Pin package features 4 source pins and 2 drain pins per side to reduce parasitic inductance and improve current sharing, while the 0.75 mΩ max RDS(on) at VGS = 10 V ensures low conduction loss at 100 A - validated across case temperatures from −55°C to +175°C with linear derating above 25°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 40 V - Maximum blocking voltage before avalanche; enables use in 24–36 V nominal bus systems with margin for transient overvoltage. |
| RDS(on) typ. | 0.55 mΩ at VGS = 10 V, ID = 100 A - Delivers ≤5.5 W conduction loss at 100 A, reducing heatsink requirements in high-power inverters. |
| ID (silicon-limited) | 522 A at TC = 25°C - Enables ultra-high-current phase-leg switching without paralleling, subject to thermal management. |
| Qg total | 305 nC typ. - Dictates gate driver power and switching speed; requires ≥2 A peak drive capability for sub-100 ns turn-on in hard-switched bridges. |
| EAS | 764 mJ single-pulse - Supports unclamped inductive switching in motor control without external snubbers under defined L/IAS/RG conditions. |
| Coss eff. (ER) | 2620 pF - Represents energy-related output capacitance during VDS rise; directly impacts zero-voltage switching (ZVS) design margin in resonant topologies. |
| dV/dt (diode) | 1.6 V/ns at TJ = 175°C - Ensures reliable commutation in high-dV/dt environments like electronic ballasts and PWM inverters. |
Pinout & Package
The IRFS7430-7PPBF uses the D2Pak-7Pin (TO-263-7) surface-mount package with exposed drain paddle, optimized for low-inductance, high-current PCB layouts. It integrates four source terminals and two drain terminals to minimize current loop area and enhance thermal transfer to the heatsink.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source | Four independent source connections reduce bond-wire inductance and enable balanced current distribution across high-frequency switching cycles. |
| 5, 6 | Drain | Two drain terminals connect to the internal die's drain metallization and the exposed copper pad - primary thermal and current path to PCB heatsink. |
| 7 | Gate | Single gate input with 2.2 Ω typical gate resistance; requires low-impedance drive to manage 305 nC charge and suppress oscillation during fast transitions. |
Key Features
| Feature | Design Value |
|---|---|
| Enhanced body diode dV/dt capability | 1.6 V/ns at 175°C - Prevents false turn-on during high-slew-rate commutation in half-bridge configurations. |
| Fully characterized avalanche SOA | 764 mJ single-pulse EAS with validated waveforms - Enables robust unclamped inductive switching without external protection. |
| Low RDS(on) × Qg figure-of-merit | 0.55 mΩ × 305 nC = 168 mΩ·nC - Balances conduction and switching losses for high-frequency (>100 kHz) resonant and hard-switched converters. |
| Lead-free, RoHS-compliant construction | Meets IPC-J-STD-020 moisture sensitivity level 3 (MSL3) - Supports standard reflow profiles without preconditioning. |
| Thermally optimized D2Pak-7Pin layout | 0.4 °C/W RθJC - Enables direct mounting to heatsinks with minimal thermal interface resistance for sustained 240 A package-limited operation. |
Applications
| Brushed Motor Drive | BLDC Motor Drive |
|---|---|
Use Scenario: High-torque 24–48 V brushed DC motor control in industrial actuators and power tools. IC Role / Device Role / Timing Role: Low-side or H-bridge switch delivering up to 240 A peak current with fast PWM response. Use Value: 0.55 mΩ RDS(on) reduces I²R losses by >30% vs. legacy 1.2 mΩ MOSFETs, extending battery runtime and lowering thermal stress on PCB traces. | Use Scenario: Three-phase inverter stage in e-bike and drone propulsion systems operating at 20–50 kHz PWM frequency. IC Role / Device Role / Timing Role: High-current phase-leg switch with synchronized body diode recovery for six-step commutation. Use Value: 50 ns trr and 1.6 V/ns dV/dt rating prevent shoot-through and cross-conduction during dead-time transitions. |
| Synchronous Rectification | OR-ing Power Switch |
Use Scenario: Secondary-side switching in 48 V input telecom DC/DC modules using LLC topology. IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diodes to reduce forward voltage drop and conduction loss. Use Value: VSD = 0.8 V at 100 A enables >3% efficiency gain over 45 V/100 A Schottky diodes at full load. | Use Scenario: Redundant 12–48 V power supply OR-ing in server backplanes and industrial PLCs. IC Role / Device Role / Timing Role: Low-RDS(on) ideal diode replacement with fast reverse blocking and low forward drop. Use Value: 0.55 mΩ on-resistance limits forward voltage to <55 mV at 100 A, minimizing power dissipation and thermal footprint vs. discrete ideal diode ICs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-current N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IXFN520N075T2 | 75 V VDSS, 0.75 mΩ RDS(on), TO-264 package, higher gate charge (420 nC) | Higher voltage rating suits 48 V systems with larger transients; less suitable for space-constrained SMT designs | Select when 75 V blocking margin is required and through-hole mounting is acceptable |
| STH315N10F7-2 | 100 V VDSS, 0.95 mΩ RDS(on), H2PAK-7 package, lower Qg (240 nC) | Better switching efficiency at 100 kHz+ but higher conduction loss; not rated for >200 A continuous | Prefer for high-frequency ZVS designs where switching loss dominates, not high-current DC conduction |
Compared with IXFN520N075T2 and STH315N10F7-2, the IRFS7430-7PPBF delivers the lowest RDS(on) per unit area in the 40 V class, making it optimal for thermally constrained, high-current applications like motor phase legs - whereas alternatives trade off voltage rating, package type, or conduction-switching balance.
Availability
IRFS7430-7PPBF is available at Aetrix Electronics and suitable for brushed motor drives, BLDC inverters, synchronous rectifiers, and OR-ing power switches requiring stable component supply across industrial, automotive, and telecom production programs.
Supply support for IRFS7430-7PPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon and wide-bandgap power devices.
The StrongIRFET™ product line - including IRFS7430-7PPBF - was developed specifically for high-current, high-reliability switching in motor drives, industrial power supplies, and redundant power architectures where ruggedness and thermal performance are critical.
FAQ
What is the maximum continuous drain current for IRFS7430-7PPBF at 100°C case temperature?
The maximum continuous drain current is 369 A at TC = 100°C under silicon-limited conditions and VGS = 10 V. However, the package-limited rating is fixed at 240 A regardless of temperature due to bond-wire current capacity - this value governs practical PCB-level design and thermal interface sizing.
Does IRFS7430-7PPBF support paralleling for higher current handling?
Yes - its negative temperature coefficient of RDS(on) (−0.55%/°C) and tightly distributed VGS(th) (2.2–3.9 V) enable stable current sharing. Designers must match gate drive impedance, minimize layout asymmetry, and ensure uniform heatsinking; parallel operation beyond 480 A has been validated in reference designs for 3-phase inverters.
How does the D2Pak-7Pin package improve thermal performance over standard D2Pak?
The D2Pak-7Pin adds three extra terminals - two additional drain pins and one extra source pin - reducing package inductance by ~35% and spreading heat across a larger copper area. Its 0.4 °C/W RθJC is 25% lower than standard D2Pak-3, enabling 240 A continuous operation with ≤45°C case rise under forced-air cooling.
Can IRFS7430-7PPBF be used as a synchronous rectifier in a 48 V output LLC converter?
Yes - its 40 V VDSS, 0.55 mΩ RDS(on), and 0.8 V VSD at 100 A make it suitable for secondary-side synchronous rectification in 48 V-output LLC converters operating up to 300 kHz. Gate drive must be precisely timed to avoid shoot-through; typical dead time is 50–80 ns with 12 V gate drive.
IRFS7430-7PPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®, StrongIRFET™
- Package/Case:
- TO-263-7, D2PAK (6 Leads + Tab)
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 240A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 6V, 10V
- Rds On (Max) @ Id, Vgs:
- 0.75mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id:
- 3.9V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 460 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 13975 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 375W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK (7-Lead)
IRFS7430-7PPBF FAQ
1.How can I place an order for IRFS7430-7PPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFS7430-7PPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFS7430-7PPBF reliable?
The price and inventory of IRFS7430-7PPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFS7430-7PPBF is usually 5 days.
3.What payment methods are accepted for IRFS7430-7PPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFS7430-7PPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFS7430-7PPBF?
IRFS7430-7PPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFS7430-7PPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFS7430-7PPBF?
For technical support, including IRFS7430-7PPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFS7430-7PPBF requirements.
6.How does Aetrix verify that IRFS7430-7PPBF is sourced from the original manufacturer or authorized distributors?
All IRFS7430-7PPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFS7430-7PPBF meets industry standards.
7.What is the process for return or replacement of IRFS7430-7PPBF?
All IRFS7430-7PPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFS7430-7PPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFS7430-7PPBF part is unused and in its original packaging.
Return procedure for IRFS7430-7PPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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