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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFS7430PBF

Name: IRFS7430PBF
Brand: Infineon Technologies
SKU: IRFS7430PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFS7430PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRFS7430PBF.pdf

Description:: MOSFET N-CH 40V 195A D2PAK

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Product details

Overview

IRFS7430PBF from Infineon Technologies is a 40 V, 195 A (package-limited), 0.97 mΩ (typ.) N-channel enhancement-mode HEXFET® Power MOSFET in D2PAK (TO-263) package, optimized for high-current synchronous rectification and low-side switching in DC/DC converters, BLDC motor drives, and OR-ing applications.

For engineers reviewing the IRFS7430PBF datasheet, IRFS7430PBF pinout, IRFS7430PBF application, or IRFS7430PBF equivalent, key selection criteria include its 1.2 mΩ max R_DS(on) at 10 V_GS, 426 A silicon-limited pulsed current capability, 150 A diode reverse recovery current rating, 97 nC total gate charge, and robust 760 mJ single-pulse avalanche energy.

Technical Context

This device employs planar stripe cell structure with optimized gate oxide and trench-assisted body diode design to achieve ultra-low on-resistance while maintaining high dV/dt immunity (2.7 V/ns) and enhanced body diode dI/dt capability (up to 990 A/μs). Its SOA is characterized up to 100 μs pulse width with thermal derating governed by R_θJC = 0.40 °C/W.

The dynamic parameters-including C_iss = 14,240 pF, C_oss(ER) = 2605 pF, and Q_gd = 98 nC-are fully specified at V_DS = 20 V and T_J = 25 °C, enabling accurate loss modeling in hard-switched and resonant topologies such as LLC and phase-shifted full-bridge converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40 V - Maximum blocking voltage before avalanche onset; enables use in 24 V and 36 V battery systems with margin.
R_DS(on) (typ.)	0.97 mΩ @ V_GS = 10 V, I_D = 100 A - Delivers <1.0 W conduction loss at 100 A, critical for high-efficiency power stages.
I_D (cont., TC=25°C)	195 A - Package-limited continuous current; determined by bond wire capacity, not silicon limit (426 A).
E_AS	760 mJ - Single-pulse avalanche energy rating; supports unclamped inductive switching in half-bridge leg shoot-through events.
Q_g	300–460 nC - Total gate charge range defines driver strength requirement; impacts switching speed and gate drive loss.
V_SD	0.86–1.2 V @ I_S = 100 A - Body diode forward voltage; directly affects reverse recovery loss and dead-time optimization.
trr	52 ns - Reverse recovery time at T_J = 25 °C, V_R = 34 V, I_F = 100 A; enables operation in >100 kHz synchronous rectifier designs.

Pinout & Package

IRFS7430PBF is housed in a surface-mount D2PAK (TO-263) package with exposed drain pad for thermal enhancement. The package features three leads: Gate (G), Drain (D), and Source (S), with Drain electrically connected to the metal tab for low-inductance, high-current path routing.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Receives 10 V logic-level drive; threshold voltage 2.2–3.9 V ensures compatibility with standard PWM controllers.
D (Drain)	High-side current output	Connected to PCB copper pour via exposed tab; carries full load current and dissipates heat directly to heatsink or board.
S (Source)	Reference node / return path	Serves as common reference for gate drive and current sensing; low-inductance layout essential for EMI control.

Key Features

Feature	Design Value
Enhanced body diode dV/dt immunity	2.7 V/ns - Reduces risk of parasitic turn-on during high-speed switching in bridge configurations.
Full avalanche SOA characterization	Validated up to 760 mJ single-pulse - Enables reliable operation under transient overvoltage without external snubbers.
Low C_oss(TR) = 2920 pF	Minimizes turn-off energy loss in hard-switched converters operating above 100 kHz.
Lead-free and RoHS-compliant	Meets IPC-J-STD-020 moisture sensitivity level 1 - Supports lead-free reflow assembly without popcorn cracking risk.
Optimized for synchronous rectification	Body diode t_rr = 52 ns and Q_rr = 97 nC enable efficient zero-voltage switching in LLC resonant converters.

Applications

Brushed Motor Drive

BLDC Motor Drive

Use Scenario: H-bridge control of 24 V brushed DC motors in power tools and industrial actuators.

IC Role / Device Role / Timing Role: Low-side switch in dual-N configuration; handles bidirectional current up to 150 A peak.

Use Value: 0.97 mΩ R_DS(on) reduces I²R losses by >30% vs. legacy 2 mΩ MOSFETs, extending battery runtime and reducing heatsink size.

Use Scenario: Six-step commutation in 36 V BLDC motor inverters for e-bikes and HVAC blowers.

IC Role / Device Role / Timing Role: High-current low-side switch in 3-phase inverter leg; operates at 20–50 kHz PWM frequency.

Use Value: 97 nC Q_g enables fast switching with moderate gate driver ICs (e.g., IR2104), minimizing dead-time loss and torque ripple.

Synchronous Rectifier

OR-ing Power Switch

Use Scenario: Secondary-side rectification in 48 V input, 12 V output LLC resonant DC/DC converter for telecom PSUs.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode; driven by transformer-coupled gate signal.

Use Value: 0.86 V V_SD and 52 ns t_rr reduce conduction and recovery losses by 45% versus 0.55 V Schottky at 100 A, improving efficiency from 94% to 96.2%.

Use Scenario: Redundant 24 V power supply OR-ing in industrial PLC backplanes with hot-swap capability.

IC Role / Device Role / Timing Role: Ideal diode replacement; controlled by external controller to prevent reverse current flow.

Use Value: 195 A continuous rating and 1524 A pulsed source current support parallel operation without current-sharing resistors.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	R_DS(on) = 0.75 mΩ (typ.), Q_g = 320 nC, V_DSS = 40 V, DFN5x6 package	Lower R_DS(on) but higher thermal resistance (R_θJA = 45 °C/W vs. 40 °C/W); unsuitable for PCB-mount-only thermal management	Prefer when board space is constrained and forced-air cooling is available.
IXFH70N40P3	R_DS(on) = 1.15 mΩ (typ.), Q_g = 240 nC, V_DSS = 40 V, TO-247 package	Higher R_DS(on), lower Q_g, through-hole mounting; better thermal performance with heatsink but larger footprint	Prefer when mechanical robustness and heatsink integration outweigh surface-mount advantages.

Compared with STL220N4F7AG and IXFH70N40P3, IRFS7430PBF offers the best balance of ultra-low R_DS(on), moderate gate charge, and D2PAK thermal interface-making it optimal for compact, high-power-density designs where PCB copper area is used as primary heatsink.

Availability

IRFS7430PBF is available at Aetrix Electronics and suitable for brushed motor drives, BLDC inverters, and synchronous rectifier circuits requiring stable component supply across automotive-grade production programs and industrial embedded systems.

Supply support for IRFS7430PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

IRFS7430PBF belongs to the HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability power conversion in battery-powered and industrial motor control systems.

FAQ

What is the maximum continuous drain current for IRFS7430PBF at 100°C case temperature?

The maximum continuous drain current at T_C = 100 °C is 152 A (silicon-limited) and 145 A (wire bond-limited), per Absolute Maximum Ratings table. This reflects thermal derating due to reduced carrier mobility and bond wire current capacity at elevated temperatures.

Does IRFS7430PBF require a gate resistor for safe operation in hard-switched applications?

Yes-a minimum gate resistor of 2.7 Ω is recommended (per Fig. 23a test circuit) to dampen ringing and limit peak gate current during turn-on/turn-off. Values below 2 Ω increase risk of gate oscillation and overshoot exceeding ±20 V absolute maximum rating.

Can IRFS7430PBF be used in linear mode (ohmic region) for analog current regulation?

No-it is not characterized or rated for linear-mode operation. The Safe Operating Area (SOA) curve (Fig. 10) shows only pulsed operation up to 100 μs; sustained linear operation risks thermal runaway due to positive temperature coefficient of R_DS(on) and lack of SOA validation beyond DC limits.

What is the recommended PCB footprint and soldering profile for IRFS7430PBF?

The recommended footprint uses a 1" × 1" copper pour connected to the exposed drain tab, with ≥6 thermal vias (0.3 mm diameter) to inner ground planes. Reflow profile follows IPC-J-STD-020 MSL Level 1: peak temperature 260 °C, time above 217 °C ≤ 60 seconds, per Application Note AN-994.

IRFS7430PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®, StrongIRFET™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 195A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 1.2mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 3.9V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 460 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 14240 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 375W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRFS7430PBF FAQ

1.How can I place an order for IRFS7430PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFS7430PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFS7430PBF reliable?

The price and inventory of IRFS7430PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFS7430PBF is usually 5 days.

3.What payment methods are accepted for IRFS7430PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFS7430PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFS7430PBF?

IRFS7430PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFS7430PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFS7430PBF?

For technical support, including IRFS7430PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFS7430PBF requirements.

6.How does Aetrix verify that IRFS7430PBF is sourced from the original manufacturer or authorized distributors?

All IRFS7430PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFS7430PBF meets industry standards.

7.What is the process for return or replacement of IRFS7430PBF?

All IRFS7430PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFS7430PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFS7430PBF part is unused and in its original packaging.

Return procedure for IRFS7430PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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