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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFS7434-7PPBF

Name: IRFS7434-7PPBF
Brand: Infineon Technologies
SKU: IRFS7434-7PPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFS7434-7PPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-7, D2PAK (6 Leads + Tab)

Datasheet:: IRFS7434-7PPBF.pdf

Description:: MOSFET N-CH 40V 240A D2PAK

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Product details

Overview

IRFS7434-7PPBF from Infineon Technologies is a 40V, 0.70 mΩ (typ) N-channel D2Pak-7Pin StrongIRFET™ HEXFET® Power MOSFET optimized for high-current synchronous rectification and bridge-leg switching in DC/DC converters, BLDC motor drives, and OR-ing applications. It delivers 240A continuous drain current (package-limited), 362A silicon-limited current, and features enhanced body diode dV/dt capability up to 3.0 V/ns at 150°C.

For engineers reviewing the IRFS7434-7PPBF datasheet, IRFS7434-7PPBF pinout, IRFS7434-7PPBF application, or IRFS7434-7PPBF equivalent, key selection criteria include R_DS(on) at 6V gate drive, avalanche energy rating (880 mJ), SOA robustness in hard-switching topologies, and thermal resistance (R_θJC = 0.51 °C/W) for high-power density board layouts.

Technical Context

This device employs a trench-gated, super-junction-enhanced silicon structure enabling ultra-low on-resistance while maintaining rugged unclamped inductive switching performance. Its 7-pin D2Pak package integrates Kelvin source connection to minimize gate loop inductance and improve control stability during fast dI/dt transitions.

The MOSFET supports gate drive voltages from 4.5V to 20V, with a typical threshold voltage of 3.0V and forward transconductance of 156 S at V_DS = 10V and I_D = 100A. Body diode recovery is characterized with Q_rr = 43 nC and t_rr = 44 ns at 25°C, supporting high-frequency synchronous rectification.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40 V - Maximum blocking voltage for 12–24 V input systems including automotive and industrial DC/DC stages.
R_DS(on) typ.	0.70 mΩ @ V_GS = 10 V, I_D = 100 A - Enables <1.0 W conduction loss at 100 A, critical for >98% efficiency in high-current buck converters.
I_D (Package)	240 A @ T_C = 25°C - Determined by wire-bond current capacity; sets practical limit for PCB-mount thermal design.
E_AS	880 mJ - Single-pulse avalanche energy at L = 1 mH, I_AS = 42 A, defining safe operating margin in unclamped inductive turn-off.
R_θJC	0.51 °C/W - Junction-to-case thermal resistance enables direct heatsink mounting for 245 W power dissipation at 25°C case temperature.
Q_g	210 nC (typ) - Total gate charge requiring ~2.1 µC per 10 V gate swing, informing driver strength requirements for <100 ns switching transitions.
V_SD	0.9 V @ I_S = 100 A, T_J = 25°C - Low body diode forward voltage reduces reverse conduction loss in half-bridge freewheeling paths.

Pinout & Package

IRFS7434-7PPBF uses the 7-pin D2Pak (TO-263-7L) package with isolated tab, featuring dual source terminals (S1, S2), Kelvin source (KS), gate (G), drain (D), and two auxiliary source pins for low-inductance high-current routing.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control terminal; requires low-impedance drive path due to 210 nC total gate charge and 2.0 Ω internal gate resistance.
D	Drain	Main high-side or low-side power terminal; electrically connected to exposed copper tab for thermal and electrical conduction.
S1, S2	Power Source	Primary current-carrying source terminals; paralleled to handle 240 A continuous package-limited current.
KS	Kelvin Source	Reference return for gate drive loop; decouples power source path from gate control to suppress Miller-induced false turn-on.

Key Features

Feature	Design Value
Enhanced body diode dV/dt capability	3.0 V/ns at TJ = 150°C - Prevents parasitic turn-on during fast voltage transients in synchronous rectifier and OR-ing configurations.
Fully characterized avalanche SOA	880 mJ single-pulse energy (L = 1 mH) - Enables reliable operation in unclamped inductive switching without external snubbers.
Low C_oss eff. (ER)	1880 pF - Reduces turn-off switching loss and improves light-load efficiency in resonant and soft-switching topologies.
Lead-free, RoHS-compliant construction	Meets IPC-J-STD-020 moisture sensitivity level 1 - Supports lead-free reflow assembly without baking or special handling.
Improved dynamic dV/dt ruggedness	Validated >50 V/ns immunity - Ensures stable gate control under high dv/dt conditions in half-bridge leg commutation.

Applications

Brushed Motor Drive

BLDC Motor Drive

Use Scenario: H-bridge control of 24 V cordless power tools with peak currents >200 A.

IC Role / Device Role / Timing Role: Low-side switch in dual-phase bridge configuration, handling bidirectional current with fast body diode recovery.

Use Value: 0.70 mΩ R_DS(on) limits I²R loss to <2.8 W at 200 A, extending battery runtime and reducing heatsink mass.

Use Scenario: Six-step commutation in 48 V e-bike controller with 10–20 kHz PWM.

IC Role / Device Role / Timing Role: High-current phase-leg switch with Kelvin source feedback to suppress shoot-through during dead-time transitions.

Use Value: 3.0 V/ns body diode dV/dt rating prevents false turn-on during rapid bus voltage reversal across motor windings.

Synchronous Rectification

OR-ing Power Switch

Use Scenario: Secondary-side switching in 48 V → 12 V isolated DC/DC converter for telecom shelf power.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode, driven complementary to primary-side FET.

Use Value: 0.9 V V_SD and 44 ns t_rr reduce conduction and recovery losses by >40% versus 40 V Schottky alternatives.

Use Scenario: Redundant 28 V aircraft avionics power distribution with automatic fault isolation.

IC Role / Device Role / Timing Role: Active OR-ing switch controlling power path between dual supplies using gate-controlled forward conduction.

Use Value: 240 A continuous rating and 0.51 °C/W R_θJC enable full-rated current sharing without forced air cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	R_DS(on) = 0.75 mΩ @ 10 V; Q_g = 235 nC; no Kelvin source	Lacks dedicated Kelvin source, limiting high-dI/dt stability in synchronous rectifier mode	Prefer IRFS7434-7PPBF where gate drive noise immunity is critical in multi-kHz hard-switching.
IXFN240N10P	V_DSS = 100 V; R_DS(on) = 1.1 mΩ; TO-264 package; higher R_θJC (0.65 °C/W)	Higher voltage rating trades off conduction loss and thermal performance for wider input range	Select IRFS7434-7PPBF for 40 V systems prioritizing lowest R_DS(on) and thermal resistance.

Compared with STL220N4F7AG and IXFN240N10P, IRFS7434-7PPBF uniquely combines sub-1 mΩ on-resistance, Kelvin source architecture, and 0.51 °C/W thermal resistance-making it optimal for space-constrained, high-efficiency 24–48 V power stages demanding both current density and switching robustness.

Availability

IRFS7434-7PPBF is available at Aetrix Electronics and suitable for brushed motor drives, BLDC inverters, and OR-ing power switches requiring stable component supply across industrial automation, aerospace power distribution, and battery-powered mobility platforms.

Supply support for IRFS7434-7PPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and industrial gate drivers, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The StrongIRFET™ product line targets high-current, high-ruggedness power switching applications-including motor drives, server VRMs, and telecom DC/DC-where low R_DS(on), controlled body diode behavior, and repeatable avalanche performance are mandatory.

FAQ

What is the maximum continuous drain current for IRFS7434-7PPBF at 100°C case temperature?

The maximum continuous drain current is 229 A at T_C = 100°C (silicon-limited) and 240 A remains the package-limited rating regardless of temperature. This reflects bond-wire current capacity rather than junction thermal limits, and actual usable current depends on PCB copper area and heatsinking.

Does IRFS7434-7PPBF support gate drive at 5 V?

Yes - R_DS(on) is specified at 1.5 mΩ max with V_GS = 6 V and I_D = 50 A, confirming functional enhancement-mode operation down to 5 V. However, full 0.70 mΩ performance requires ≥10 V gate drive; 5 V operation yields higher conduction loss and reduced SOA margin.

How is the Kelvin source (KS) pin used in layout?

The KS pin must be routed separately from power source traces and connected directly to the gate driver's source reference node. This breaks the high-di/dt source loop from the gate drive path, preventing voltage drop across source inductance from modulating V_GS and causing unintended turn-on during switching transitions.

Is IRFS7434-7PPBF suitable for paralleling multiple devices?

Yes - its positive R_DS(on) temperature coefficient (0.03 V/°C for V_BRDSS) and matched threshold voltage distribution support stable current sharing. For parallel operation, match gate resistors, use symmetrical layout, and ensure identical thermal mounting to avoid thermal runaway.

IRFS7434-7PPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®, StrongIRFET™

Package/Case:: TO-263-7, D2PAK (6 Leads + Tab)

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 240A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 1mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 3.9V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 315 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 10250 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 245W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK (7-Lead)

IRFS7434-7PPBF FAQ

1.How can I place an order for IRFS7434-7PPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFS7434-7PPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFS7434-7PPBF reliable?

The price and inventory of IRFS7434-7PPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFS7434-7PPBF is usually 5 days.

3.What payment methods are accepted for IRFS7434-7PPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFS7434-7PPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFS7434-7PPBF?

IRFS7434-7PPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFS7434-7PPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFS7434-7PPBF?

For technical support, including IRFS7434-7PPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFS7434-7PPBF requirements.

6.How does Aetrix verify that IRFS7434-7PPBF is sourced from the original manufacturer or authorized distributors?

All IRFS7434-7PPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFS7434-7PPBF meets industry standards.

7.What is the process for return or replacement of IRFS7434-7PPBF?

All IRFS7434-7PPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFS7434-7PPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFS7434-7PPBF part is unused and in its original packaging.

Return procedure for IRFS7434-7PPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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