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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFS7434PBF

Name: IRFS7434PBF
Brand: Infineon Technologies
SKU: IRFS7434PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFS7434PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRFS7434PBF.pdf

Description:: MOSFET N-CH 40V 195A D2PAK

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Product details

Overview

IRFS7434PBF from Infineon Technologies is a 40 V, 195 A (package-limited), D2PAK-packaged N-channel HEXFET Power MOSFET with 1.25 mΩ typical R_DS(on) at V_GS = 10 V, optimized for high-current synchronous rectification and half-bridge motor drive stages in battery-powered inverters and DC/DC converters.

For engineers reviewing the IRFS7434PBF datasheet, IRFS7434PBF pinout, IRFS7434PBF application, or IRFS7434PBF equivalent, key selection criteria include its 1.25 mΩ on-resistance, 1270 A pulsed drain current rating, 5.0 V/ns diode dv/dt capability, and validated avalanche energy of 490 mJ - all critical for robust BLDC gate-drive and OR-ing switch designs under transient stress.

Technical Context

This MOSFET employs planar silicon-gate technology with enhanced body diode ruggedness, enabling reliable unclamped inductive switching up to 100 A I_AS at T_J = 25°C. Its low Q_gd/Q_g ratio (77/216 nC) supports fast, low-loss hard-switching in resonant topologies.

The device features thermally optimized D2PAK packaging with 0.5°C/W R_θJC, allowing sustained 195 A conduction when mounted on ≥1"² FR-4 PCBs. Its 38 ns t_rr and 50 nC Q_rr at 100 A support efficient synchronous rectification in high-frequency DC/AC inverters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40 V - Maximum blocking voltage before avalanche onset; sets upper limit for bus voltage in 24–36 V systems.
R_DS(on) typ.	1.25 mΩ @ V_GS = 10 V, T_J = 25°C - Enables <1.3 W conduction loss at 100 A, critical for thermal management in compact power stages.
I_D (package)	195 A @ T_C = 25°C - Real-world continuous current limit governed by bond wire and leadframe heating, not silicon capacity.
Q_g	216 nC max - Determines gate driver power requirement; ~2.2 W average drive loss at 100 kHz, 10 V swing.
E_AS	490 mJ single-pulse - Supports safe operation during 100 A inductive turn-off transients without thermal runaway.
t_rr	38 ns @ T_J = 25°C, I_F = 100 A - Minimizes reverse recovery losses in synchronous rectifier mode below 200 kHz.
R_θJC	0.5°C/W - Enables direct heatsink mounting; junction-to-case temperature rise is only 97.5°C at 195 A conduction.

Pinout & Package

D2PAK (TO-263) surface-mount package with exposed drain pad for thermal and electrical connection; 3-pin configuration (G-D-S) with G (Gate), D (Drain), S (Source) terminals.

Pin/Terminal	Circuit Role	Design Meaning
G	Control input	Receives 10 V gate drive to fully enhance channel; threshold voltage 2.2–3.9 V ensures TTL/CMOS compatibility.
D	High-side or low-side current path	Internally connected to copper tab; must be soldered to PCB copper pour or heatsink for thermal and current conduction.
S	Reference node for gate drive and current sensing	Provides return path for load current; source inductance directly impacts switching speed and ringing.

Key Features

Feature	Design Value
Enhanced body diode dV/dt capability	5.0 V/ns - Prevents false turn-on during high dv/dt commutation in bridge legs, eliminating need for external snubbers.
Low C_{oss eff.} (TR)	2208 pF - Reduces turn-off energy loss in hard-switched ZVS/ZCS circuits operating above 100 kHz.
High I_AR rating	47 A repetitive avalanche - Allows reliable operation in unclamped inductive loads without derating for occasional fault events.
Lead-free and RoHS-compliant	Meets IPC-J-STD-020 moisture sensitivity level 1 - Enables standard reflow assembly without pre-bake requirements.
Characterized SOA curves	Validated up to 100 μs pulse width - Provides design confidence for motor stall and short-circuit protection timing.

Applications

Brushed Motor Drive

BLDC Motor Drive

Use Scenario: H-bridge control of 24 V cordless power tools with peak currents >150 A.

IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional current with fast body diode recovery.

Use Value: 1.25 mΩ R_DS(on) reduces I²R loss by 35% vs. legacy 2 mΩ MOSFETs, extending battery runtime per charge cycle.

Use Scenario: Six-step commutation in 36 V e-bike controllers with 10–20 kHz PWM.

IC Role / Device Role / Timing Role: High-current phase-leg switch enabling 195 A continuous conduction per leg.

Use Value: 38 ns t_rr and 50 nC Q_rr minimize shoot-through risk and reduce dead-time overhead by 20%.

Synchronous Rectification

OR-ing Power Switch

Use Scenario: Secondary-side switching in 48 V telecom DC/DC modules delivering 200 A output.

IC Role / Device Role / Timing Role: Low-V_DS rectifier replacing Schottky diodes to cut forward drop from 0.5 V to <0.05 V.

Use Value: 1.25 mΩ on-resistance yields <2 W conduction loss at 200 A, improving efficiency by 1.8% over 3 mΩ alternatives.

Use Scenario: Redundant 24 V power supply backplane with automatic failover between two sources.

IC Role / Device Role / Timing Role: Unidirectional current-blocking switch with fast turn-off to prevent reverse current flow.

Use Value: 5.0 V/ns diode dv/dt rating prevents parasitic turn-on during hot-swap transitions, ensuring clean switchover.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1407PBF	R_DS(on) = 4.0 mΩ (higher), I_D = 110 A (lower), same D2PAK package	Lower current density; suitable only for ≤100 A continuous loads	Select when cost sensitivity outweighs efficiency and thermal margin requirements.
STL220N4F7AG	R_DS(on) = 1.15 mΩ (slightly lower), 40 V rating, but TO-220FP package with higher R_θJA (60°C/W)	Limited to ≤80 A continuous due to inferior thermal resistance despite lower R_DS(on)	Prefer only for through-hole prototyping where D2PAK reflow is unavailable.

Compared with IRF1407PBF and STL220N4F7AG, IRFS7434PBF uniquely delivers 195 A package-limited current with 0.5°C/W R_θJC and 5.0 V/ns diode dv/dt - making it the sole choice for production-grade 150+ A synchronous rectifiers and BLDC inverters requiring both conduction efficiency and switching ruggedness.

Availability

IRFS7434PBF is available at Aetrix Electronics and suitable for brushed motor drives, BLDC inverters, and synchronous rectifiers requiring stable component supply across automotive aftermarket, industrial automation, and renewable energy power conversion programs.

Supply support for IRFS7434PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability power conversion in battery-powered and high-current industrial systems.

FAQ

What is the maximum continuous drain current for IRFS7434PBF at 100°C case temperature?

The maximum continuous drain current at T_C = 100°C is 226 A (silicon-limited), but the package-limited rating remains 195 A regardless of case temperature due to bond wire current capacity constraints and leadframe thermal limits.

Can IRFS7434PBF be used in avalanche mode for circuit protection?

Yes - it is fully characterized for repetitive avalanche with E_AR = 294 mJ at T_J = 25°C and I_AR = 47 A, provided junction temperature stays below 175°C and pulse width remains within SOA limits defined in Figure 15.

Is the body diode suitable for high-frequency synchronous rectification?

Yes - with t_rr = 38 ns and Q_rr = 50 nC at 100 A, the body diode supports synchronous rectification up to 200 kHz in DC/DC converters, reducing forward voltage drop versus Schottky diodes while maintaining low recovery loss.

What is the recommended gate resistor value for hard-switching at 100 kHz?

A 5 Ω series gate resistor is recommended to balance switching speed (minimizing t_r/t_f) and gate oscillation damping, given the device's 2.1 Ω internal gate resistance and 216 nC total gate charge - yielding ~100 ns effective turn-on delay.

IRFS7434PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®, StrongIRFET™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 195A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 1.6mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 3.9V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 324 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 10820 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 294W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRFS7434PBF FAQ

1.How can I place an order for IRFS7434PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFS7434PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFS7434PBF reliable?

The price and inventory of IRFS7434PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFS7434PBF is usually 5 days.

3.What payment methods are accepted for IRFS7434PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFS7434PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFS7434PBF?

IRFS7434PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFS7434PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFS7434PBF?

For technical support, including IRFS7434PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFS7434PBF requirements.

6.How does Aetrix verify that IRFS7434PBF is sourced from the original manufacturer or authorized distributors?

All IRFS7434PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFS7434PBF meets industry standards.

7.What is the process for return or replacement of IRFS7434PBF?

All IRFS7434PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFS7434PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFS7434PBF part is unused and in its original packaging.

Return procedure for IRFS7434PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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