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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFS7437-7PPBF

Name: IRFS7437-7PPBF
Brand: Infineon Technologies
SKU: IRFS7437-7PPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFS7437-7PPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Datasheet:: IRFS7437-7PPBF.pdf

Description:: MOSFET N-CH 40V 195A D2PAK

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Product details

Overview

IRFS7437-7PPBF from Infineon Technologies is a 40V, 195A (package-limited), N-channel D2PAK-7L HEXFET® Power MOSFET with 1.1 mΩ typical R_DS(on) at V_GS = 10 V, optimized for high-current synchronous rectification and half-bridge switching in DC/DC converters and motor drives. It features enhanced body diode dI/dt capability (1288 A/μs), 1040 A pulsed source current, and 231 mJ single-pulse avalanche energy.

For engineers reviewing the IRFS7437-7PPBF datasheet, IRFS7437-7PPBF pinout, IRFS7437-7PPBF application, or IRFS7437-7PPBF equivalent, key selection criteria include its 0.65 °C/W R_θJC, 150 nC total gate charge, 7437 pF C_iss, and validated performance in PWM inverterized topologies up to 175 °C junction temperature.

Technical Context

This device employs a trench-gated, silicon-based N-channel structure with integrated ultra-fast body diode, enabling robust unclamped inductive switching and high di/dt recovery (≤1288 A/μs) without oscillation. Its SOA is characterized up to 100 μs pulse width and limited by R_DS(on) in linear region, with thermal design anchored to 0.65 °C/W junction-to-case resistance.

Dynamic parameters are fully specified at T_J = 25 °C and 125 °C: Q_gd = 51 nC ensures controlled Miller plateau behavior; C_{oss eff.(TR)} = 1735 pF defines hard-switching turn-off timing; and V_GS(th) drift of +0.035 V/°C supports stable gate drive across temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40 V - Maximum blocking voltage before avalanche onset; sets upper limit for bus voltage in 12–24 V systems.
R_DS(on) typ.	1.1 mΩ @ V_GS = 10 V, T_J = 25 °C - Enables <1.1 W conduction loss at 100 A, critical for high-efficiency power stages.
I_D (Package)	195 A @ T_C = 25 °C - Real-world continuous current limit defined by bond wire and package thermal path, not silicon.
Q_g	150 nC max - Determines gate driver power requirement and switching speed trade-off in 100–500 kHz converters.
E_AS	231 mJ single-pulse - Quantifies safe unclamped inductive energy handling during fault conditions or startup.
R_θJC	0.65 °C/W - Enables precise junction temperature estimation when mounted on heatsink; defines thermal bottleneck location.
trr	37 ns @ T_J = 25 °C - Fast body diode recovery minimizes shoot-through risk and switching losses in synchronous rectifiers.

Pinout & Package

IRFS7437-7PPBF uses the D2PAK-7L (TO-263-7) surface-mount package with exposed drain pad for low-inductance, high-current PCB mounting. The 7-pin layout integrates three parallel source terminals and two auxiliary source pins to reduce source inductance and improve current sharing.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 5, 6	Source (S)	Five dedicated source terminals minimize common-source inductance and improve paralleling stability in high-dI/dt operation.
4	Gate (G)	Single gate input with 2.2 Ω internal resistance; requires low-impedance driver to manage 150 nC charge efficiently.
7 (Drain Pad)	Drain (D)	Exposed copper drain tab soldered directly to PCB power plane; provides primary thermal path and <0.5 nH parasitic inductance.

Key Features

Feature	Design Value
Enhanced body diode dI/dt capability	1288 A/μs - Enables reliable commutation in BLDC and resonant topologies without external snubbers.
Full avalanche rating	231 mJ single-pulse - Eliminates need for external clamping in inductive load switching applications like motor drivers.
Low C_{oss eff.(TR)}	1735 pF - Reduces turn-off energy loss (E_off ∝ V × Q_gd) in hard-switched 200–500 kHz DC/DC converters.
Lead-free & halogen-free	Complies with IPC/JEDEC J-STD-020D reflow profile - Supports lead-free assembly without reliability degradation.
Thermally rugged SOA	Validated up to 100 μs pulse width at 175 °C - Ensures safe operation during overload transients in industrial power supplies.

Applications

Brushed Motor Drive

BLDC Motor Drive

Use Scenario: H-bridge control of 24 V automotive seat/mirror actuators with peak currents >150 A.

IC Role / Device Role / Timing Role: Low-side switch in dual-phase configuration; handles bidirectional current with fast body diode recovery.

Use Value: 1.1 mΩ R_DS(on) reduces I²R heating at stall condition; 1040 A pulsed source rating supports surge torque demands.

Use Scenario: Six-step commutation in 48 V e-bike controller with 10–20 kHz PWM frequency.

IC Role / Device Role / Timing Role: High-current inverter leg switch; synchronously rectifies back-EMF during freewheeling phase.

Use Value: 37 ns trr and 1288 A/μs dI/dt prevent reverse recovery failure; low Q_gd enables clean 100 ns turn-off transitions.

Synchronous Rectifier

OR-ing Power Switch

Use Scenario: Secondary-side rectification in 48 V → 12 V isolated DC/DC converter for telecom shelf power.

IC Role / Device Role / Timing Role: Active rectifier replacing Schottky diode; driven complementary to primary-side FET.

Use Value: 1.0 V V_SD forward drop at 100 A cuts conduction loss by >50% vs. 0.5 V Schottky; 0.65 °C/W R_θJC sustains 95% efficiency at full load.

Use Scenario: Redundant 28 V aircraft avionics power distribution with automatic fault isolation.

IC Role / Device Role / Timing Role: OR-ing FET in hot-swap controller circuit; blocks reverse current during supply failure.

Use Value: 40 V V_DSS margin accommodates 28 V nominal + 20% transients; 195 A continuous rating supports dual 100 A feeds.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N4F7AG	40 V, 220 A (package), R_DS(on) = 0.95 mΩ, Q_g = 165 nC, DFN8 5×6 mm	Lower R_DS(on) but higher gate charge; no exposed drain pad - requires thermal vias instead of direct heatsink contact.	Preferred for space-constrained board layouts where thermal via density can match D2PAK-7L's R_θJC.
IXFH72N30X3	300 V, 72 A, R_DS(on) = 12.5 mΩ, TO-247 - higher voltage rating, lower current, larger footprint	Not a drop-in replacement; suited for 200–300 V industrial inverters, not 40 V motor drives.	Select only if system bus voltage exceeds 40 V or legacy TO-247 mechanical compatibility is required.

Compared with STL220N4F7AG and IXFH72N30X3, IRFS7437-7PPBF delivers optimal balance of ultra-low R_DS(on), proven avalanche robustness, and D2PAK-7L's superior thermal interface - making it the preferred choice for 24–48 V, >150 A synchronous switching applications demanding field-proven reliability.

Availability

IRFS7437-7PPBF is available at Aetrix Electronics and suitable for brushed motor drive, BLDC motor drive, and synchronous rectifier applications requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial and transportation OEMs.

Supply support for IRFS7437-7PPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability power conversion in motor drives, server PSUs, and renewable energy inverters where thermal robustness and dynamic ruggedness are mission-critical.

FAQ

What is the maximum continuous drain current for IRFS7437-7PPBF under real-world PCB mounting?

The maximum continuous drain current is 195 A at T_C = 25 °C, defined by wire bond and package thermal limits-not silicon capability. This rating assumes mounting on a 1" square FR-4 PCB with recommended footprint per AN-994; exceeding this current risks bond wire fusing even if junction temperature remains within 175 °C.

Does IRFS7437-7PPBF support synchronous rectification in 48 V to 12 V DC/DC converters?

Yes-its 1.0 V typical V_SD at 100 A, 37 ns trr, and 1288 A/μs dI/dt make it suitable for secondary-side synchronous rectification. Gate drive must be precisely timed to avoid shoot-through; the 2.2 Ω internal gate resistance helps dampen ringing but requires a driver capable of sourcing/sinking ≥2 A peak current.

How is avalanche energy rated, and what test conditions apply?

E_AS is rated at 231 mJ single-pulse under standardized unclamped inductive switching: L = 0.069 mH, I_AS = 100 A, V_GS = 10 V, T_J = 25 °C. Repetitive avalanche is permitted only if junction temperature stays ≤175 °C; energy per pulse must be derated linearly above 25 °C ambient using Z_thJC curves in Figure 14.

Can IRFS7437-7PPBF replace older IRF1405 or IRF1704 in existing designs?

No-IRFS7437-7PPBF is not a pin-compatible upgrade. It uses D2PAK-7L (7-pin) packaging versus TO-220 (3-pin) for IRF1405/IRF1704, requiring PCB redesign. While R_DS(on) is ~5× lower, gate charge is higher (150 nC vs. ~70 nC), demanding stronger gate drivers and careful layout to manage increased switching EMI.

IRFS7437-7PPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®, StrongIRFET™

Package/Case:: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 195A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 1.4mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 3.9V @ 150µA

Gate Charge (Qg) (Max) @ Vgs:: 225 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7437 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 231W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK (7-Lead)

IRFS7437-7PPBF FAQ

1.How can I place an order for IRFS7437-7PPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFS7437-7PPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFS7437-7PPBF reliable?

The price and inventory of IRFS7437-7PPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFS7437-7PPBF is usually 5 days.

3.What payment methods are accepted for IRFS7437-7PPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFS7437-7PPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFS7437-7PPBF?

IRFS7437-7PPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFS7437-7PPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFS7437-7PPBF?

For technical support, including IRFS7437-7PPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFS7437-7PPBF requirements.

6.How does Aetrix verify that IRFS7437-7PPBF is sourced from the original manufacturer or authorized distributors?

All IRFS7437-7PPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFS7437-7PPBF meets industry standards.

7.What is the process for return or replacement of IRFS7437-7PPBF?

All IRFS7437-7PPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFS7437-7PPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFS7437-7PPBF part is unused and in its original packaging.

Return procedure for IRFS7437-7PPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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