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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFS7437PBF

Name: IRFS7437PBF
Brand: Infineon Technologies
SKU: IRFS7437PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFS7437PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRFS7437PBF.pdf

Description:: MOSFET N CH 40V 195A D2PAK

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Product details

Overview

IRFS7437PBF from Infineon Technologies is a 40 V, 195 A (package-limited), D2PAK-packaged N-channel HEXFET Power MOSFET with typ. 1.4 mΩ R_DS(on) at V_GS = 10 V, optimized for high-current synchronous rectification and half-bridge motor drive in battery-powered systems. It features enhanced body diode dV/dt and dI/dt capability, 1000 mJ single-pulse avalanche energy, and 1.0–1.3 V forward voltage for its intrinsic source-drain diode.

For engineers reviewing the IRFS7437PBF datasheet, IRFS7437PBF pinout, IRFS7437PBF application, or IRFS7437PBF equivalent, key selection criteria include silicon- vs. package-limited current rating (250 A vs. 195 A), effective output capacitance (C_oss,eff(TR) = 1735 pF), gate charge (Q_g = 150–225 nC), and thermal resistance (R_θJC = 0.65 °C/W).

Technical Context

This MOSFET employs planar stripe cell structure with optimized gate oxide and trench-assisted field shaping to achieve robust dynamic dV/dt immunity (>100 V/ns) and improved avalanche ruggedness. Its low R_DS(on) and high peak diode recovery dI/dt (≤1166 A/μs) support fast-switching resonant topologies and OR-ing applications where reverse recovery Q_rr (24 nC @ 25°C) and t_rr (30 ns) are critical.

The device integrates a monolithic integral p-n junction body diode rated for 250 A continuous source current and 1000 A pulsed current. Its SOA is characterized up to 100 μs pulse width with linear derating beyond 25°C case temperature, and thermal impedance Z_thJC is validated per JEDEC JESD51-14 for transient junction-to-case modeling.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40 V - Maximum drain-source blocking voltage; defines upper limit for DC/DC converter input or motor phase rail voltage.
R_DS(on) max	1.8 mΩ @ T_J = 25°C, V_GS = 10 V - Sets conduction loss floor in high-current paths; contributes ≤1.8 W loss at 100 A.
I_D (pkg)	195 A @ T_C = 25°C - Package-limited continuous current; constrained by leadframe bond wire capacity, not silicon.
Q_g	150–225 nC - Total gate charge determines driver power requirement and switching speed trade-off in hard-switched bridges.
E_AS	1000 mJ - Single-pulse avalanche energy rating; enables unclamped inductive switching without failure under defined test conditions.
t_rr	30 ns @ T_J = 25°C - Body diode reverse recovery time; impacts turn-on loss and EMI in synchronous rectifier operation.
R_θJC	0.65 °C/W - Junction-to-case thermal resistance; enables precise heatsink sizing when mounted on copper baseplate with thermal interface.

Pinout & Package

D2PAK (TO-263) surface-mount package with isolated tab (drain-connected), 3-pin configuration: Gate (G), Drain (D), Source (S). Tab is electrically connected to drain and serves as primary thermal path.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate terminal	Controls channel conduction; requires ≥10 V for full enhancement; internal gate resistance is 2.2 Ω.
D	Drain terminal / exposed tab	Main high-side current path; tab must be soldered to PCB copper pour for thermal management and electrical connection.
S	Source terminal	Reference node for gate drive and current sensing; connects to low-side switch or ground return in half-bridge.

Key Features

Feature	Design Value
Enhanced body diode dI/dt capability	Rated for ≤1166 A/μs recovery di/dt - reduces risk of commutation failure in high-frequency synchronous rectifiers.
Characterized avalanche SOA	Validated single-pulse E_AS = 1000 mJ and repetitive E_AR = 250 mJ - supports reliable operation in unclamped inductive switching.
Low C_oss,eff(TR)	1735 pF - time-related effective output capacitance; improves zero-voltage switching (ZVS) margin in resonant converters.
Halogen-free & lead-free	Meets RoHS Directive 2011/65/EU and JEDEC JS709A - compliant for industrial and automotive end equipment without exemptions.
Improved dynamic dV/dt ruggedness	Rated >100 V/ns - suppresses false turn-on during high dv/dt transients in bridge-leg cross-conduction scenarios.

Applications

Brushed Motor Drive

BLDC Motor Drive

Use Scenario: High-current H-bridge control for cordless power tools and robotics with 12–36 V battery supply.

IC Role / Device Role / Timing Role: Low-side or high-side switching element handling bidirectional 100–150 A peak currents with fast PWM switching.

Use Value: 1.4 mΩ R_DS(on) minimizes I²R losses during stall conditions; robust body diode handles regenerative braking current.

Use Scenario: Six-step commutation in 3-phase BLDC inverters for e-bikes and HVAC blowers operating at 20–50 kHz.

IC Role / Device Role / Timing Role: Upper- and lower-leg switch in each phase leg, requiring matched timing and low Q_g for efficient gate drive.

Use Value: 150 nC typical Q_g enables use of compact gate drivers; 30 ns t_rr limits shoot-through risk during dead-time transitions.

Synchronous Rectification

OR-ing / Redundant Power

Use Scenario: Secondary-side switching in 48 V input telecom DC/DC modules delivering up to 200 A at 12 V output.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode to reduce conduction loss and improve efficiency above 10 A.

Use Value: 1.0–1.3 V V_SD and 250 A continuous source rating allow direct replacement with <50% forward loss versus 40 V Schottky.

Use Scenario: Hot-swap and redundancy control in server PSUs and distributed power architectures with dual 12 V inputs.

IC Role / Device Role / Timing Role: Back-to-back configured MOSFET acting as ideal diode with ultra-low forward drop and fast reverse blocking.

Use Value: 1.8 mΩ R_DS(on) yields <2.3 mV drop at 100 A - significantly lower than discrete ideal diode IC solutions with integrated FETs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1407PBF	R_DS(on) = 5.2 mΩ (max), I_D = 100 A (pkg), D2PAK - higher on-resistance, lower current rating, same footprint.	Lower power density; suitable only for ≤60 A average load applications with relaxed thermal constraints.	Select when cost sensitivity outweighs efficiency requirements and board space allows larger parallel count.
STL220N4F7AG	R_DS(on) = 0.95 mΩ (typ), I_D = 220 A (pkg), TO-220FP - lower R_DS(on), but through-hole, higher R_θJA (40 °C/W vs. 0.65 °C/W).	Requires mechanical mounting and heatsink; unsuitable for high-density SMT designs or thermally constrained PCB layouts.	Prefer for legacy through-hole platforms or where forced-air cooling permits higher ambient rise.

Compared with IRF1407PBF and STL220N4F7AG, IRFS7437PBF delivers the lowest thermal resistance and highest package-limited current in D2PAK, enabling single-device 195 A operation without paralleling-critical for minimizing PCB area and gate driver complexity in high-power motor drives.

Availability

IRFS7437PBF is available at Aetrix Electronics and suitable for brushed motor drives, BLDC inverters, and synchronous rectifier circuits requiring stable component supply across industrial automation, power tool OEMs, and telecom infrastructure programs.

Supply support for IRFS7437PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and industrial sensors, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability switching in battery-powered and high-current industrial power conversion systems.

FAQ

What is the maximum continuous drain current for IRFS7437PBF at 100°C case temperature?

The maximum continuous drain current at T_C = 100°C is 100 A (silicon-limited), as specified in the Absolute Maximum Ratings table. This reflects thermal derating due to reduced channel conductivity and increased R_DS(on) at elevated temperatures, not package limitation - the 195 A rating applies only at T_C = 25°C.

Can IRFS7437PBF be used in parallel configurations?

Yes, it supports paralleling due to its positive R_DS(on) temperature coefficient (R_DS(on) increases with junction temperature), which promotes current sharing. However, layout symmetry, matched gate drive impedance, and individual source inductance control are essential to avoid current imbalance - typical design practice uses ≤3 devices in parallel for >500 A systems.

Is the body diode suitable for continuous freewheeling in hard-switched converters?

Yes - the integral body diode is rated for 250 A continuous source current and exhibits low V_SD (1.0–1.3 V) and fast t_rr (30 ns), making it suitable for freewheeling in non-resonant topologies. However, for >100 kHz operation, external Schottky or SiC diodes may be preferred to minimize Q_rr-related losses.

What is the recommended gate resistor value for hard-switched 50 kHz half-bridge operation?

A gate resistor of 2.7 Ω is validated in the datasheet for 100 A switching with 19 ns t_d(on) and 70 ns t_r. For 50 kHz hard-switched operation, 2.2–3.3 Ω balances switching loss (lower R_G) against EMI and ringing (higher R_G); layout parasitics and driver output impedance must be included in total gate loop resistance.

IRFS7437PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®, StrongIRFET™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 195A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 1.8mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 3.9V @ 150µA

Gate Charge (Qg) (Max) @ Vgs:: 225 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7330 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 230W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IRFS7437PBF FAQ

1.How can I place an order for IRFS7437PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFS7437PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFS7437PBF reliable?

The price and inventory of IRFS7437PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFS7437PBF is usually 5 days.

3.What payment methods are accepted for IRFS7437PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFS7437PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFS7437PBF?

IRFS7437PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFS7437PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFS7437PBF?

For technical support, including IRFS7437PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFS7437PBF requirements.

6.How does Aetrix verify that IRFS7437PBF is sourced from the original manufacturer or authorized distributors?

All IRFS7437PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFS7437PBF meets industry standards.

7.What is the process for return or replacement of IRFS7437PBF?

All IRFS7437PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFS7437PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFS7437PBF part is unused and in its original packaging.

Return procedure for IRFS7437PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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