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Infineon Technologies IRFS7440PBF

Part No.:
IRFS7440PBF
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixIRFS7440PBF.pdf
Description:
MOSFET N CH 40V 120A D2PAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,095

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Product details

Overview

IRFS7440PBF from Infineon Technologies is a 40V, 208A N-channel D2PAK-7L HEXFET Power MOSFET with 2.0mΩ typical RDS(on) at VGS = 10V, 175°C max junction temperature, and enhanced body diode dV/dt/dI/dt capability-designed for high-current synchronous rectification in DC/DC converters and half-bridge motor drives.

For engineers reviewing the IRFS7440PBF datasheet, IRFS7440PBF pinout, IRFS7440PBF application, or IRFS7440PBF equivalent, key selection criteria include its 2.5mΩ max RDS(on), 772A pulsed source current rating, 6.8V/ns diode dv/dt ruggedness, and 120A package-limited continuous current under thermal constraints.

Technical Context

This device employs a trench-gated, silicon-based N-channel MOSFET structure optimized for low conduction loss and fast switching in hard-switched and resonant topologies. Its 4730pF Ciss, 90nC total gate charge, and 32nC Miller charge support efficient gate drive design at high-frequency operation up to 500kHz.

The integrated body diode features 24ns reverse recovery time (TJ = 25°C), 17nC Qrr, and 1.3V forward voltage at 100A-enabling robust performance in bidirectional power flow applications such as OR-ing and active clamp circuits without external Schottky supplementation.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 40V - Maximum blocking voltage before avalanche onset; defines safe operating range in 12–36V bus systems.
RDS(on) typ. 2.0mΩ @ VGS = 10V, TJ = 25°C - Enables <1.0W conduction loss at 100A, critical for thermally constrained PCB layouts.
ID cont. 208A @ TC = 25°C - Rated for high-current single-pulse or short-duration duty cycles with heatsink mounting.
ID (pkg lim.) 120A - Practical continuous current limit imposed by leadframe thermal resistance and bond wire capacity.
Qg 90nC max - Determines gate driver power requirement and switching transition time in 100–200kHz SMPS designs.
EAS 772mJ - Single-pulse avalanche energy rating supports unclamped inductive switching in motor control fault conditions.
VSD 0.9V typ. @ IS = 100A - Low body diode forward drop reduces conduction loss during freewheeling in synchronous rectifiers.

Pinout & Package

D2PAK-7L (TO-263-7L) surface-mount package with exposed drain pad for thermal enhancement; 7-pin configuration supporting Kelvin source sensing and dual gate drive paths.

Pin/Terminal Circuit Role Design Meaning
1 (G) Gate Main control terminal; accepts 10V logic-level drive for full enhancement; internal RG = 2.6Ω limits ringing.
2 (S) Source Power return path; Pin 2 is main source; Pins 3 & 4 are Kelvin source terminals for accurate current sensing.
3 (S-K) Kelvin Source Low-noise sensing node isolated from high-di/dt source current path; enables precise RDS(on)-based current monitoring.
4 (S-K) Kelvin Source Redundant Kelvin source connection for improved layout symmetry and noise immunity in high-side configurations.
5–7 (D) Drain Parallel-connected drain terminals tied to exposed copper pad; primary thermal and current path to PCB heatsink.

Key Features

Feature Design Value
Enhanced body diode dV/dt capability 6.8V/ns - Prevents spurious turn-on during high-speed commutation in bridge-leg configurations.
Lead-free RoHS-compliant construction No Pb, Br, or halogens - Meets IPC-J-STD-020 moisture sensitivity level 3 (MSL3) for standard SMT reflow.
Thermally rugged SOA 100μs pulse width, 10msec DC limit - Supports overload handling in BLDC startup and battery short-circuit events.
Characterized Coss eff. (ER) 845pF - Energy-related output capacitance used for ZVS timing calculations in LLC resonant converters.
Low Qgd/Qg ratio 35% - Improves Miller immunity and enables stable operation with moderate gate resistance (RG = 5–10Ω).

Applications

Brushed Motor Drive BLDC Motor Drive

Use Scenario: High-torque 24V/48V brushed DC motor control in power tools and industrial actuators.

IC Role / Device Role / Timing Role: Low-side switch in H-bridge topology; handles 150A peak currents during stall conditions.

Use Value: 2.0mΩ RDS(on) minimizes I²R heating at 100A, enabling compact heatsinkless designs in handheld tools.

Use Scenario: Three-phase inverter stage for 3kW e-bike or scooter motor controllers.

IC Role / Device Role / Timing Role: High-current phase leg switch; operates at 20kHz PWM with synchronous rectification.

Use Value: 24ns trr and 17nC Qrr reduce switching loss and EMI during commutation, improving efficiency >97%.

Synchronous Rectifier OR-ing Power Switch

Use Scenario: Secondary-side rectification in 48V input telecom DC/DC modules delivering 100A output.

IC Role / Device Role / Timing Role: Active replacement of Schottky diode; driven complementary to primary-side FET.

Use Value: 0.9V VSD and 120A package rating enable >1.5% efficiency gain over 40V Schottky alternatives.

Use Scenario: Redundant 28V aircraft power distribution with automatic fault isolation.

IC Role / Device Role / Timing Role: Bidirectional OR-ing switch; conducts forward current and blocks reverse faults.

Use Value: 6.8V/ns dv/dt rating prevents false turn-on during load dump transients, ensuring fail-safe redundancy.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
IRF1404ZPBF 40V, 200A, 2.7mΩ RDS(on), TO-220AB package, no Kelvin source Lacks Kelvin source and D2PAK thermal performance; suitable only for lower-power, non-sensing designs Choose when cost sensitivity outweighs sensing accuracy and thermal margin requirements.
STL220N4F7AG 40V, 220A, 1.7mΩ RDS(on), PowerFLAT 8x8 package, no Kelvin source, 175°C TJ Superior RDS(on) but no Kelvin sensing; limited to surface-mount-only, no through-hole option Prefer for space-constrained, high-density PCBs where Kelvin sensing is not required.

Compared with IRF1404ZPBF and STL220N4F7AG, IRFS7440PBF uniquely combines Kelvin source terminals, D2PAK thermal scalability, and 6.8V/ns diode dv/dt rating-making it the only choice for precision current-controlled, high-reliability motor and OR-ing systems.

Availability

IRFS7440PBF is available at Aetrix Electronics and suitable for brushed motor drive, BLDC inverter, and synchronous rectifier applications requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for industrial OEM programs.

Supply support for IRFS7440PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The IRFS7440PBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability power conversion in demanding motor control and power supply applications.

FAQ

What is the maximum continuous drain current for IRFS7440PBF at 100°C case temperature?

The maximum continuous drain current is 147A at TC = 100°C and VGS = 10V, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to reduced RDS(on) stability and junction-to-case thermal resistance limitations at elevated temperatures.

Does IRFS7440PBF support Kelvin source sensing, and how is it implemented?

Yes-IRFS7440PBF features three dedicated source terminals: Pin 2 (main source), and Pins 3 & 4 (Kelvin source). These isolated low-current paths enable accurate gate-to-source voltage control and eliminate voltage drop errors from high-di/dt source traces in precision current regulation circuits.

Can IRFS7440PBF be used in avalanche mode, and what is its rated single-pulse energy?

Yes-IRFS7440PBF is fully characterized for repetitive and single-pulse avalanche operation. Its rated single-pulse avalanche energy (EAS) is 772mJ at TJ = 25°C, validated per JEDEC JESD24-11 test conditions using 100A IAS, 50Ω gate resistance, and 0.048mH inductance.

What is the significance of Coss eff. (ER) = 845pF in power converter design?

Coss eff. (ER) represents the fixed capacitance that stores the same energy as the nonlinear Coss during VDS rise from 0 to 80% VDSS. It is used to calculate zero-voltage switching (ZVS) timing and resonant tank losses in LLC and phase-shifted full-bridge converters where soft-switching margin is critical.

IRFS7440PBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®, StrongIRFET™
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tube
Product Status:
Discontinued at Digi-Key
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Rds On (Max) @ Id, Vgs:
2.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:
3.9V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:
135 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
4730 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
208W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-263 (D2PAK)

IRFS7440PBF FAQ

1.How can I place an order for IRFS7440PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFS7440PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFS7440PBF reliable?

The price and inventory of IRFS7440PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFS7440PBF is usually 5 days.

3.What payment methods are accepted for IRFS7440PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFS7440PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFS7440PBF?

IRFS7440PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFS7440PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFS7440PBF?

For technical support, including IRFS7440PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFS7440PBF requirements.

6.How does Aetrix verify that IRFS7440PBF is sourced from the original manufacturer or authorized distributors?

All IRFS7440PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFS7440PBF meets industry standards.

7.What is the process for return or replacement of IRFS7440PBF?

All IRFS7440PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFS7440PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFS7440PBF part is unused and in its original packaging.

Return procedure for IRFS7440PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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