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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFS7530-7PPBF

Name: IRFS7530-7PPBF
Brand: Infineon Technologies
SKU: IRFS7530-7PPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFS7530-7PPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-7, D2PAK (6 Leads + Tab)

Datasheet:: IRFS7530-7PPBF.pdf

Description:: MOSFET N CH 60V 240A D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFS7530-7PPBF from Infineon Technologies is a 60 V, 1.15 mΩ (typ) N-channel D2PAK-7L HEXFET® Power MOSFET optimized for high-current synchronous rectification and bridge-leg switching in battery-powered motor drives and resonant power supplies. It delivers 240 A continuous drain current (package-limited), supports 1450 A pulsed current, and features enhanced body diode dV/dt (8.5 V/ns) and dI/dt capability for robust BLDC commutation.

For engineers reviewing the IRFS7530-7PPBF datasheet, IRFS7530-7PPBF pinout, IRFS7530-7PPBF application, or IRFS7530-7PPBF equivalent, key selection criteria include R_DS(on) at 10 V gate drive, avalanche energy rating (1029 mJ), thermal resistance (0.40 °C/W J–C), and SOA compliance in half-bridge configurations with fast switching transients.

Technical Context

This device uses a trench-gate silicon process with optimized cell pitch and thick copper clip bonding to achieve ultra-low R_DS(on) and reduced package inductance. Its 7-pin D2PAK layout separates high-side gate and source terminals to minimize common-source inductance during high-dI/dt switching.

The body diode is fully characterized for reverse recovery (Q_rr = 72 nC @ 25°C, trr = 48 ns) and exhibits controlled dv/dt immunity up to 8.5 V/ns at 175°C - critical for reliable operation in hard-switched OR-ing and synchronous rectifier topologies without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Maximum blocking voltage before avalanche onset; enables use in 48 V nominal systems with margin for transient overvoltage.
R_DS(on) (typ)	1.15 mΩ @ V_GS = 10 V, I_D = 100 A - Enables <1.2 W conduction loss at 100 A, reducing heatsink requirements in high-power motor inverters.
I_D (pkg-limited)	240 A @ T_C = 25°C - Determined by bond wire current capacity; defines maximum safe DC current under ideal heatsinking.
E_AS	1029 mJ - Single-pulse avalanche energy at T_J = 25°C; supports unclamped inductive switching in half-bridge fault conditions.
Q_g	236 nC (typ) - Total gate charge required for full turn-on; determines gate driver power and switching speed trade-off in 100 kHz+ SMPS designs.
R_θJC	0.40 °C/W - Junction-to-case thermal resistance; allows direct calculation of junction temperature rise under known case temperature and power dissipation.
dv/dt (diode)	8.5 V/ns - Peak diode recovery dv/dt rating at T_J = 175°C; ensures stable commutation in BLDC drives without parasitic turn-on.

Pinout & Package

IRFS7530-7PPBF uses the D2PAK-7L (TO-263-7) surface-mount package with isolated source and gate pins to reduce common-source inductance. The package features a copper clip construction for low thermal resistance and high current handling.

Pin/Terminal	Circuit Role	Design Meaning
G (Pin 1)	Gate input	Control terminal for MOSFET channel activation; requires low-impedance drive due to 236 nC Q_g.
S1 (Pin 2)	Source (low-side reference)	Primary source connection for power return path; electrically isolated from S2 to enable Kelvin sensing.
D (Pins 3–5)	Drain (power output)	High-current drain connection spanning three parallel pins; minimizes current density and resistive loss.
S2 (Pin 6)	Kelvin source sense	Dedicated low-current source reference for accurate gate drive control and current monitoring in closed-loop systems.
G (Pin 7)	Gate input (redundant)	Second gate connection for improved gate loop inductance control in high-frequency bridge applications.

Key Features

Feature	Design Value
Enhanced body diode dV/dt capability	8.5 V/ns at 175°C - Prevents false turn-on during fast inductive flyback, eliminating need for external diode clamping in BLDC drivers.
Fully characterized avalanche SOA	1029 mJ single-pulse energy - Enables reliable operation under unclamped inductive switching faults without derating.
Low R_DS(on) × Q_g figure-of-merit	1.15 mΩ × 236 nC = 271 mΩ·nC - Balances conduction and switching losses for high-efficiency 48 V motor drives.
7-pin Kelvin source configuration	Separate S1 (power) and S2 (sense) pins - Reduces gate drive error caused by source inductance during high dI/dt transitions.

Applications

Brushed Motor Drive

BLDC Motor Drive

Use Scenario: High-current H-bridge for cordless power tools operating from 36–48 V Li-ion packs.

IC Role / Device Role / Timing Role: Low-side and high-side switch in half-bridge leg; handles bidirectional current up to 240 A peak.

Use Value: 1.15 mΩ R_DS(on) reduces conduction loss by >30% vs. legacy 2 mΩ MOSFETs, extending runtime per charge cycle.

Use Scenario: Six-step commutation in 4 kW e-bike controller with sensorless FOC backup.

IC Role / Device Role / Timing Role: Inverter switch with synchronized body diode conduction during PWM dead-time intervals.

Use Value: 8.5 V/ns diode dv/dt rating prevents shoot-through during high-speed commutation at 20 kHz switching frequency.

Synchronous Rectification

OR-ing Power Switch

Use Scenario: Secondary-side switch in 60 V/100 A LLC resonant converter for telecom rectifiers.

IC Role / Device Role / Timing Role: Active rectifier replacing Schottky diodes; driven synchronously with primary-side timing.

Use Value: 1.15 mΩ on-resistance cuts forward voltage drop from 0.5 V (Schottky) to <0.12 V at 100 A, improving efficiency by 1.2%.

Use Scenario: Redundant 48 V DC input selector in industrial PLC power supply with hot-swap capability.

IC Role / Device Role / Timing Role: Back-to-back configured OR-ing switch enabling seamless switchover between two independent supplies.

Use Value: 240 A continuous rating supports full system load during transition; avalanche rating protects against bus collapse events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N6F7	R_DS(on) = 0.95 mΩ (typ), Q_g = 290 nC, DFN8 5×6 mm package	Lower R_DS(on) but higher gate charge; requires larger gate driver; no Kelvin source pins	Preferred for space-constrained PCBs where thermal interface is superior, but not suitable for high-precision current sensing.
IXFH70N60X3	R_DS(on) = 1.4 mΩ (typ), 600 V rating, TO-247 package, E_AS = 1200 mJ	Higher voltage rating and ruggedness; larger footprint and higher R_DS(on); no 7-pin Kelvin configuration	Selected when system-level overvoltage transients exceed 100 V or when through-hole mounting is required for mechanical robustness.

Compared with STL220N6F7 and IXFH70N60X3, IRFS7530-7PPBF uniquely balances ultra-low on-resistance, Kelvin source sensing, and compact D2PAK-7L packaging - making it optimal for high-reliability, high-current motor drive inverters requiring precise gate control and minimal layout-induced oscillation.

Availability

IRFS7530-7PPBF is available at Aetrix Electronics and suitable for brushed motor drives, BLDC motor controllers, and synchronous rectifier circuits requiring stable component supply across automotive-grade production cycles, industrial automation upgrades, and renewable energy power conversion programs.

Supply support for IRFS7530-7PPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and industrial sensors, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This device belongs to the StrongIRFET™ family, engineered specifically for high-current, high-efficiency power conversion in battery-powered and industrial motor drive systems where low R_DS(on), avalanche robustness, and diode recovery control are critical.

FAQ

What is the maximum continuous drain current for IRFS7530-7PPBF at 100°C case temperature?

The maximum continuous drain current at T_C = 100°C is 239 A (silicon-limited), as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to reduced channel conductivity and increased R_DS(on) at elevated temperatures, and assumes proper PCB copper area and thermal vias per AN-994 guidelines.

Does IRFS7530-7PPBF support gate drive at 5 V logic levels?

No - the gate threshold voltage (V_GS(th)) ranges from 2.1 V to 3.7 V, but R_DS(on) is only guaranteed at V_GS = 10 V (1.4 mΩ max). At 5 V, R_DS(on) rises significantly (>5 mΩ), increasing conduction loss beyond acceptable limits for 240 A operation; 10–15 V gate drive is required for full performance.

How is the 7-pin configuration used in half-bridge layouts?

In half-bridge designs, Pin 1 and Pin 7 serve as parallel gate inputs to reduce gate loop inductance, while Pin 2 (S1) carries main source current and Pin 6 (S2) provides a dedicated Kelvin sense path to the gate driver IC - isolating gate control from power return noise and enabling accurate current regulation without added shunt resistors.

What is the significance of C_{oss eff.(ER)} = 1248 pF in power supply design?

C_{oss eff.(ER)} represents the effective output capacitance based on stored energy during V_DS rise - critical for calculating turn-off switching loss and zero-voltage switching (ZVS) feasibility in resonant converters. At 1248 pF, it indicates lower capacitive turn-off loss than devices with higher C_oss, supporting efficient operation above 300 kHz in LLC topologies.

IRFS7530-7PPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®, StrongIRFET™

Package/Case:: TO-263-7, D2PAK (6 Leads + Tab)

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 240A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 1.4mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 3.7V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 354 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 12960 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 375W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK (7-Lead)

IRFS7530-7PPBF FAQ

1.How can I place an order for IRFS7530-7PPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFS7530-7PPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFS7530-7PPBF reliable?

The price and inventory of IRFS7530-7PPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFS7530-7PPBF is usually 5 days.

3.What payment methods are accepted for IRFS7530-7PPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFS7530-7PPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFS7530-7PPBF?

IRFS7530-7PPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFS7530-7PPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFS7530-7PPBF?

For technical support, including IRFS7530-7PPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFS7530-7PPBF requirements.

6.How does Aetrix verify that IRFS7530-7PPBF is sourced from the original manufacturer or authorized distributors?

All IRFS7530-7PPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFS7530-7PPBF meets industry standards.

7.What is the process for return or replacement of IRFS7530-7PPBF?

All IRFS7530-7PPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFS7530-7PPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFS7530-7PPBF part is unused and in its original packaging.

Return procedure for IRFS7530-7PPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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