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Infineon Technologies IRFS7530PBF
- Part No.:
- IRFS7530PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRFS7530PBF.pdf
- Description:
- MOSFET N-CH 60V 195A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:2,496
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Product details
Overview
IRFS7530PBF from Infineon Technologies (formerly International Rectifier) is a 60V, 195A (package-limited), N-channel enhancement-mode HEXFET® Power MOSFET in TO-262 package, optimized for high-current synchronous rectification and bridge-leg switching in DC/DC converters, BLDC motor drives, and OR-ing applications. It features 1.65 mΩ typical RDS(on) at VGS = 10 V, 524 mJ single-pulse avalanche energy, and enhanced body diode dV/dt capability up to 8.1 V/ns at TJ = 175°C.
For engineers reviewing the IRFS7530PBF datasheet, IRFS7530PBF pinout, IRFS7530PBF application, or IRFS7530PBF equivalent, key selection criteria include its 60V VDSS, low 1.65 mΩ on-resistance, 195A continuous drain current rating, robust 8.1 V/ns diode recovery dv/dt, and TO-262 thermal performance with RθJC = 0.40 °C/W.
Technical Context
This MOSFET employs planar silicon technology with optimized gate oxide and trench-assisted source bonding to achieve high current density and improved avalanche ruggedness. Its dynamic parameters-274 nC total gate charge, 83 nC gate-to-drain charge, and 13.7 nF input capacitance-are calibrated for fast, low-loss switching in hard-switched and resonant topologies.
The device integrates a co-packaged, high-speed body diode with 51 ns reverse recovery time (TJ = 25°C) and 86 nC Qrr, enabling reliable operation in synchronous rectifier and bidirectional power flow circuits without external Schottky supplementation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - Maximum blocking voltage before avalanche; supports 48 V bus systems with 20 % margin. |
| RDS(on) typ. | 1.65 mΩ @ VGS = 10 V, ID = 100 A - Enables <1.7 W conduction loss at 100 A, critical for high-efficiency power stages. |
| ID (Package) | 195 A @ TC = 25°C - Determined by leadframe and bond-wire limits; defines practical current ceiling in TO-262 mounting. |
| EAS | 524 mJ (single-pulse) - Specifies unclamped inductive switching robustness under worst-case turn-off conditions. |
| dV/dt (diode) | 8.1 V/ns @ TJ = 175°C - Ensures stable body diode commutation during fast voltage transients in half-bridge configurations. |
| Qg | 274 nC typ. - Dictates gate driver power requirement and switching speed trade-off in 100–200 kHz power converters. |
| RθJC | 0.40 °C/W - Enables 375 W power dissipation at ΔT = 150°C; requires efficient heatsinking for sustained 195 A operation. |
Pinout & Package
IRFS7530PBF is housed in a TO-262 (I²PAK) package with isolated tab, featuring three terminals: Drain (D), Source (S), and Gate (G). The drain-connected tab provides low-inductance, high-current path to heatsink while maintaining electrical isolation from PCB ground plane.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D (Drain) | Main high-side current path | Connected to power rail or switch node; electrically tied to metal tab for thermal conduction and low-inductance layout. |
| S (Source) | Reference node for gate drive and current sensing | Common return for load current and gate driver return; used for Kelvin-source sensing in precision control designs. |
| G (Gate) | Control terminal for channel modulation | High-impedance input requiring <2.1 Ω series resistance to damp ringing; sensitive to ESD (±20 V max rating). |
Key Features
| Feature | Design Value |
|---|---|
| Enhanced body diode dV/dt capability | 8.1 V/ns at 175°C - Prevents false turn-on during high-slew-rate commutation in half-bridge and synchronous rectifier modes. |
| Fully characterized avalanche SOA | 524 mJ single-pulse, 1025 mJ thermally limited - Allows safe operation under unclamped inductive switching without external snubbers. |
| Low gate charge profile | Qgd/Qg = 30 % - Reduces Miller-induced switching delay and improves controllability in high-frequency PWM. |
| Thermally optimized TO-262 package | RθJC = 0.40 °C/W - Delivers 2.5× better thermal resistance than comparable TO-220 devices, supporting higher sustained current density. |
| Lead-free, RoHS-compliant construction | Meets IPC/JEDEC J-STD-020D reflow profile - Compatible with standard Pb-free assembly processes without derating. |
Applications
| Brushed Motor Drive | BLDC Motor Inverter |
|---|---|
|
Use Scenario: High-torque 48 V brushed DC motor control in power tools and industrial actuators. IC Role / Device Role / Timing Role: Low-side switching element in H-bridge configuration, handling bidirectional 150–200 A peak currents. Use Value: 1.65 mΩ RDS(on) minimizes I²R losses during stall conditions, extending battery runtime and reducing heatsink size. |
Use Scenario: Upper and lower leg switching in 3-phase BLDC inverters for e-bikes and HVAC compressors. IC Role / Device Role / Timing Role: Synchronous rectifier and active switching device in 20–50 kHz PWM-driven bridge legs. Use Value: 8.1 V/ns body diode dv/dt rating prevents shoot-through during dead-time commutation, improving system reliability. |
| OR-ing Power Supply | Resonant DC/DC Converter |
|
Use Scenario: Redundant 12–48 V DC power path management in telecom and server PSUs. IC Role / Device Role / Timing Role: Active OR-ing switch replacing Schottky diodes to reduce forward voltage drop and heat generation. Use Value: 195 A package-limited current supports >1 kW parallel power rails with <0.2 V conduction loss at full load. |
Use Scenario: Primary-side switch in LLC resonant converters for high-efficiency AC/DC adapters and LED drivers. IC Role / Device Role / Timing Role: Hard-switched or ZVS-capable main switch operating at 100–300 kHz with low Coss energy (1.2 µJ). Use Value: 1267 pF Coss(ER) enables predictable zero-voltage switching transitions, reducing EMI and switching losses. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-current 60 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N6F7 | 60 V, 220 A (package), RDS(on) = 1.45 mΩ typ., but higher Qg = 320 nC and no published avalanche energy spec. | Better conduction loss at ultra-high current, but slower switching and uncharacterized avalanche robustness. | Prefer when thermal design prioritizes conduction over switching loss and avalanche stress is absent. |
| IXFH70N60X3 | 600 V, 70 A, RDS(on) = 12.5 mΩ - not voltage-compatible; included only for topology-level comparison of Gen 3 Si superjunction architecture. | Designed for high-voltage PFC and offline SMPS, not 48 V systems. | Not a functional substitute; consider only for architectural benchmarking of newer Si technologies. |
Compared with STL220N6F7, IRFS7530PBF offers superior avalanche ruggedness (524 mJ vs. unspecified) and lower gate drive demand (274 nC vs. 320 nC), making it more suitable for inductive switching and compact gate driver designs; IXFH70N60X3 operates in a different voltage class and is not interchangeable.
Availability
IRFS7530PBF is available at Aetrix Electronics and suitable for brushed motor drives, BLDC inverters, and OR-ing power supplies requiring stable component supply across industrial, automotive, and telecom production programs.
Supply support for IRFS7530PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon-based power devices and system-level energy efficiency solutions.
IRFS7530PBF belongs to the StrongIRFET™ family of high-current HEXFET® MOSFETs, engineered specifically for high-efficiency, high-reliability power conversion in motor control, server PSU, and renewable energy systems.
FAQ
What is the maximum continuous drain current for IRFS7530PBF at 100°C case temperature?
The maximum continuous drain current is 195 A at TC = 25°C, de-rated linearly by 2.5 W/°C. At TC = 100°C, power dissipation is limited to 187.5 W, yielding approximately 138 A using RDS(on) = 2.00 mΩ (max) and P = I²R. This reflects wire-bond current limit-not silicon limit-and assumes proper heatsinking per AN-994 footprint guidelines.
Does IRFS7530PBF support gate drive at 5 V logic level?
No. With VGS(th) ranging from 2.1 V to 3.7 V and RDS(on) specified only at VGS = 10 V, 5 V drive yields significantly higher on-resistance (>5 mΩ) and unstable conduction. Reliable operation requires ≥10 V gate drive; 12–15 V is recommended to ensure full enhancement and minimize switching losses.
Can IRFS7530PBF be used in parallel configurations?
Yes-its positive RDS(on) temperature coefficient (normalized RDS(on) rises with junction temperature) enables inherent current sharing. Successful paralleling requires matched gate drive impedance, symmetrical PCB layout, and shared heatsinking. Derate total current by 15 % to account for dynamic imbalance per AN-1140 recommendations.
Is the TO-262 package of IRFS7530PBF electrically isolated?
Yes. The TO-262 (I²PAK) package features an isolated metal tab: the drain is internally connected to the tab, but the tab is electrically insulated from the PCB mounting surface via a dielectric pad or insulating washer. This allows direct heatsink attachment without shorting the drain to system ground, provided proper isolation materials are used per JEDEC MO-220 standards.
IRFS7530PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®, StrongIRFET™
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 195A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 6V, 10V
- Rds On (Max) @ Id, Vgs:
- 2mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id:
- 3.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 411 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 13703 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 375W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
IRFS7530PBF FAQ
1.How can I place an order for IRFS7530PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFS7530PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFS7530PBF reliable?
The price and inventory of IRFS7530PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFS7530PBF is usually 5 days.
3.What payment methods are accepted for IRFS7530PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFS7530PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFS7530PBF?
IRFS7530PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFS7530PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFS7530PBF?
For technical support, including IRFS7530PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFS7530PBF requirements.
6.How does Aetrix verify that IRFS7530PBF is sourced from the original manufacturer or authorized distributors?
All IRFS7530PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFS7530PBF meets industry standards.
7.What is the process for return or replacement of IRFS7530PBF?
All IRFS7530PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFS7530PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFS7530PBF part is unused and in its original packaging.
Return procedure for IRFS7530PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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