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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFS7534-7PPBF

Name: IRFS7534-7PPBF
Brand: Infineon Technologies
SKU: IRFS7534-7PPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFS7534-7PPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-7, D2PAK (6 Leads + Tab)

Datasheet:: IRFS7534-7PPBF.pdf

Description:: MOSFET N CH 60V 240A D2PAK

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Product details

Overview

IRFS7534-7PPBF from Infineon Technologies (formerly International Rectifier) is a 60V, 1.60 mΩ typ. N-channel Trench MOSFET in D2PAK-7L package, optimized for high-current synchronous rectification and half/full-bridge motor drive stages. It delivers 240A continuous drain current (package-limited), supports 790A pulsed operation, and features enhanced body diode dV/dt (9.4 V/ns) and dI/dt capability for robust BLDC and DC/DC converter switching.

For engineers reviewing the IRFS7534-7PPBF datasheet, IRFS7534-7PPBF pinout, IRFS7534-7PPBF application, or IRFS7534-7PPBF equivalent, key selection criteria include R_DS(on) at 100A/10V (1.60 mΩ), gate charge (200 nC typ.), avalanche energy (370 mJ single-pulse), SOA compliance up to 100A/48V, and thermal resistance R_θJC = 0.51 °C/W - all critical for high-efficiency, thermally constrained power stage design.

Technical Context

This device employs Infineon's StrongIRFET™ TrenchMOS architecture with optimized cell layout and trench gate process to achieve ultra-low R_DS(on) while maintaining rugged unclamped inductive switching performance. Its 7-pin D2PAK package integrates an isolated source Kelvin connection (Pin 7) to eliminate source inductance impact on gate drive stability during high di/dt transitions.

The MOSFET exhibits fully characterized dynamic parameters including C_iss = 9990 pF, Q_gd = 59 nC, and trr = 45 ns (T_J = 25°C), enabling precise loss modeling in resonant LLC and hard-switched topologies. Its body diode is rated for 100A continuous reverse recovery with I_RRM = 2.4 A and Q_rr = 64 nC, supporting efficient synchronous rectification in 48V bus systems.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Maximum blocking voltage compatible with 48V nominal input systems with 20% transient margin.
R_DS(on) max	1.95 mΩ @ V_GS = 10V, I_D = 100A - Enables <1.95 W conduction loss at 100A, critical for <1% efficiency loss in high-current paths.
I_D (pkg)	240 A @ T_C = 25°C - Package-limited continuous current defines PCB copper and heatsink requirements for sustained 200–240A operation.
Q_g typ.	200 nC - Total gate charge determines driver strength requirement; 2.7 Ω gate resistor yields ~195 ns t_d(off) in hard-switched applications.
E_AS	370 mJ (single-pulse, L = 74 µH) - Quantifies safe unclamped inductive energy handling without junction failure at T_J ≤ 175°C.
R_θJC	0.51 °C/W - Junction-to-case thermal resistance enables direct heatsink mounting; 100W dissipation raises case temp by only 51°C above heatsink.
trr	45 ns @ T_J = 25°C - Reverse recovery time governs minimum dead-time setting in synchronous rectifiers to avoid shoot-through.

Pinout & Package

D2PAK-7L (TO-263-7) package with exposed drain pad (Pins 1–3, 5–6) and Kelvin source sensing (Pin 7). Thermal pad soldered to PCB for low R_θJA; Pin 4 is gate.

Pin/Terminal	Circuit Role	Design Meaning
1,2,3,5,6	Drain	Parallel-connected high-current drain terminals; require wide copper pour for <0.5 mΩ PCB trace resistance.
4	Gate	Standard gate input; requires low-inductance routing and ≥2.7 Ω series resistor to damp ringing during fast switching.
7	Kelvin Source	Isolated source sense node for gate driver feedback; eliminates source inductance error in high-di/dt gate control loops.
Tab (bottom)	Drain (thermal)	Exposed metal tab electrically connected to drain; must be insulated from heatsink unless system ground is drain-referenced.

Key Features

Feature	Design Value
Enhanced body diode dV/dt rating	9.4 V/ns at T_J = 175°C - Prevents parasitic turn-on during fast voltage transients in OR-ing and synchronous rectifier circuits.
Fully characterized avalanche SOA	370 mJ single-pulse, 773 mJ alternate condition - Enables reliable operation in unclamped inductive loads without external snubbers.
Low C_oss eff. (ER)	900 pF - Energy-related output capacitance minimizes turn-off loss in resonant converters operating above 100 kHz.
Lead-free, RoHS-compliant	Halogen-free molding compound and matte tin lead finish - Meets IPC-J-STD-020D reflow profile (peak 260°C) and environmental compliance mandates.
Improved gate ruggedness	±20 V V_GS rating with 100 nA IGSS max - Supports robust gate drive in noisy industrial environments with minimal risk of oxide breakdown.

Applications

Brushed Motor Drive

BLDC Inverter Stage

Use Scenario: High-power cordless tools with 18–48V battery packs driving brushed DC motors at peak currents >150A.

IC Role / Device Role / Timing Role: Low-side switch in H-bridge configuration, conducting full motor current during PWM on-time with <2 mΩ conduction loss.

Use Value: Enables >97% efficiency at 100A due to 1.60 mΩ R_DS(on), reducing thermal stress on PCB and extending battery runtime per charge cycle.

Use Scenario: 3-phase inverter for e-bike or scooter controllers using space-constrained 4-layer PCBs with integrated heatsinking.

IC Role / Device Role / Timing Role: Upper-leg switch in 6-step commutation, requiring fast turn-off (86 ns fall time) and low Q_gd to minimize Miller-induced shoot-through risk.

Use Value: 59 nC Q_gd and 200 nC Q_g allow clean 20 kHz PWM switching with standard gate drivers, eliminating need for active Miller clamping.

Synchronous Rectifier

OR-ing Power Path

Use Scenario: Secondary-side rectification in 48V/50A telecom DC/DC modules where body diode conduction dominates light-load efficiency.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diodes, driven by controller-synchronized gate signals with precise dead-time control.

Use Value: 45 ns trr and 2.4 A I_RRM enable tight dead-time margins (<100 ns), reducing reverse recovery losses by >40% vs. discrete diodes.

Use Scenario: Redundant 48V power supply backplane in industrial PLCs requiring hot-swap capability and fault isolation between parallel inputs.

IC Role / Device Role / Timing Role: OR-ing FET controlling power path from each supply, operating in linear region during startup and switching fully on during steady-state.

Use Value: 1.60 mΩ R_DS(on) limits voltage drop to <80 mV at 50A, minimizing power loss and thermal rise while supporting <1 ms fault response via current-sense monitoring.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N6F7	R_DS(on) = 1.85 mΩ @ 100A, Q_g = 185 nC, no Kelvin source pin	Lacks Pin 7 Kelvin source; requires careful PCB layout to mitigate gate oscillation at >500 A/µs di/dt	Preferred where cost sensitivity outweighs need for ultra-stable gate drive in high-di/dt inverters.
IXFH70N60X3	600V rating, R_DS(on) = 12.5 mΩ, TO-247 package, higher R_θJC = 0.45 °C/W	Designed for 400V+ bus systems; unsuitable for 48V high-current apps due to excessive conduction loss	Only viable if system requires 600V blocking and can accept 7.8× higher R_DS(on) penalty.

Compared with STL220N6F7, IRFS7534-7PPBF provides lower R_DS(on) and Kelvin source for superior gate control, while IXFH70N60X3 trades voltage rating for unacceptable conduction loss in 48V designs - making IRFS7534-7PPBF optimal for high-efficiency, high-di/dt 48V power stages.

Availability

IRFS7534-7PPBF is available at Aetrix Electronics and suitable for brushed motor drives, BLDC inverter stages, and synchronous rectifier circuits requiring stable component supply across automotive aftermarket, industrial automation, and telecom infrastructure programs.

Supply support for IRFS7534-7PPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with leadership in silicon and SiC power devices.

This part belongs to the StrongIRFET™ family, engineered specifically for high-current, high-frequency power conversion in motor drives and server/telecom power supplies where low R_DS(on), ruggedness, and precise dynamic parameter control are mandatory.

FAQ

What is the maximum continuous drain current for IRFS7534-7PPBF at 100°C case temperature?

The maximum continuous drain current at T_C = 100°C is 180 A (silicon-limited), as specified in the Absolute Maximum Ratings table. This reflects thermal derating from the 240 A (T_C = 25°C) package limit, governed by R_θJC = 0.51 °C/W and T_Jmax = 175°C. Operation above this current requires active cooling or reduced ambient conditions.

Does IRFS7534-7PPBF support Kelvin source connection, and how is it implemented?

Yes - Pin 7 is a dedicated Kelvin source terminal, electrically isolated from the main source pins (not present; source is internal to die). It connects directly to the source metallization inside the package, enabling gate driver feedback that rejects voltage drop across source bond wires and PCB traces. This ensures accurate V_GS control during high-di/dt switching.

How does the body diode performance compare to standard Schottky rectifiers in synchronous rectification?

The body diode has V_SD = 1.2 V at 100 A and T_J = 25°C, higher than Schottky forward voltage but compensated by controlled Q_rr = 64 nC and trr = 45 ns. Unlike Schottky diodes, it avoids reverse leakage at high temperature and enables precise timing control when actively driven, reducing total loss in medium-frequency (100–500 kHz) DC/DC converters.

Can IRFS7534-7PPBF be used in paralleled configurations, and what layout considerations apply?

Yes - its low R_DS(on) tolerance (1.60–1.95 mΩ) and matched dynamic parameters support paralleling. Critical layout requirements include symmetrical gate drive paths with individual 2.7 Ω resistors, identical drain/source copper lengths, and shared thermal interface to a common heatsink. Kelvin source connections must be routed separately to avoid coupling noise into gate feedback loops.

IRFS7534-7PPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®, StrongIRFET™

Package/Case:: TO-263-7, D2PAK (6 Leads + Tab)

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 240A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 1.95mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 3.7V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 300 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 9990 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 290W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK (7-Lead)

IRFS7534-7PPBF FAQ

1.How can I place an order for IRFS7534-7PPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFS7534-7PPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFS7534-7PPBF reliable?

The price and inventory of IRFS7534-7PPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFS7534-7PPBF is usually 5 days.

3.What payment methods are accepted for IRFS7534-7PPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFS7534-7PPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFS7534-7PPBF?

IRFS7534-7PPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFS7534-7PPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFS7534-7PPBF?

For technical support, including IRFS7534-7PPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFS7534-7PPBF requirements.

6.How does Aetrix verify that IRFS7534-7PPBF is sourced from the original manufacturer or authorized distributors?

All IRFS7534-7PPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFS7534-7PPBF meets industry standards.

7.What is the process for return or replacement of IRFS7534-7PPBF?

All IRFS7534-7PPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFS7534-7PPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFS7534-7PPBF part is unused and in its original packaging.

Return procedure for IRFS7534-7PPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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