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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFS7534PBF

Name: IRFS7534PBF
Brand: Infineon Technologies
SKU: IRFS7534PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFS7534PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRFS7534PBF.pdf

Description:: MOSFET N CH 60V 195A D2PAK

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Product details

Overview

IRFS7534PBF from Infineon Technologies is a 60 V, 2.0 mΩ (typ), 195 A (package-limited) N-channel enhancement-mode HEXFET® Power MOSFET in TO-262 package, designed for high-current switching in half-bridge and full-bridge topologies, synchronous rectification, and BLDC motor drives. It features fully characterized avalanche SOA, enhanced body diode dV/dt capability (9.2 V/ns), and lead-free RoHS compliance.

For engineers reviewing the IRFS7534PBF datasheet, IRFS7534PBF pinout, IRFS7534PBF application, or IRFS7534PBF equivalent, this device is selected for high-efficiency DC/DC converters, battery-powered inverters, and OR-ing power switches where low R_DS(on), robust unclamped inductive switching, and thermal reliability at >150°C junction temperature are critical.

Technical Context

This MOSFET employs planar silicon technology with optimized gate oxide and source bonding to achieve 2.0 mΩ typical on-resistance at V_GS = 10 V and 100 A, while maintaining 373 mJ single-pulse avalanche energy (E_AS) at T_J = 25°C. Its dynamic parameters include Q_g = 186 nC (typ), Q_gd = 56 nC (typ), and C_oss = 921 pF (typ) at V_DS = 25 V.

The device exhibits thermally stable gate threshold voltage (V_GS(th) = 2.1–3.7 V), low reverse recovery charge (Q_rr = 71 nC at T_J = 25°C), and high diode dI/dt capability (1135 A/µs), enabling reliable operation in resonant-mode supplies and fast-switching bridge configurations without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Maximum blocking voltage before avalanche onset; supports 48 V bus systems with 20% margin.
R_DS(on) (typ)	2.0 mΩ at V_GS = 10 V, I_D = 100 A - Enables <1.0 W conduction loss at 100 A, reducing heatsink requirements.
I_D (package)	195 A continuous at T_C = 25°C - Limited by wire bond capacity; defines maximum safe DC current under ideal heatsinking.
E_AS	373 mJ (single pulse, L = 75 µH) - Supports unclamped inductive switching up to 100 A without failure.
Q_g	186 nC (typ) - Determines gate drive power requirement; ~1.86 mC total charge per 10 kcycles at 10 V drive.
dv/dt (diode)	9.2 V/ns (T_J = 175°C) - Prevents false turn-on during fast commutation in half-bridge leg cross-conduction scenarios.
R_θJC	0.51 °C/W - Enables 294 W power dissipation at ΔT = 150°C; requires ≤0.5 °C/W total thermal path to ambient.

Pinout & Package

IRFS7534PBF uses the TO-262 (ISOTOP) package: 3-pin, through-hole, isolated tab (drain-connected), with standard D-S-G pin assignment viewed from front (label side). The drain tab is electrically connected to pin 2 and must be mounted to a heatsink with insulating washer if isolation is required.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Controls channel conduction; requires ≥10 V for full enhancement; RG = 1.9 Ω internal gate resistance limits ringing.
Pin 2 (D)	Drain	Main high-side current path; electrically tied to metal tab; must be thermally coupled to heatsink for R_θJC benefit.
Pin 3 (S)	Source	Power return and gate reference; low-inductance layout critical to minimize V_GS disturbance during switching.

Key Features

Feature	Design Value
Enhanced body diode dV/dt capability	9.2 V/ns at T_J = 175°C - Eliminates need for external anti-parallel diodes in synchronous rectifier designs.
Fully characterized avalanche SOA	373 mJ single-pulse E_AS with validated thermal failure boundary - Enables robust operation in unclamped inductive loads without derating.
Low gate charge asymmetry	Q_gd/Q_g = 30% (56/186 nC) - Reduces Miller-induced shoot-through risk in bridge configurations.
Thermally rugged construction	R_θJC = 0.51 °C/W and T_J(max) = +175°C - Supports sustained operation in sealed enclosures or high-ambient industrial environments.
RoHS-compliant lead-free finish	Pb-free plating on leads and tab - Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL-1); no pre-bake required.

Applications

Brushed Motor Drive

BLDC Motor Inverter

Use Scenario: 24–48 V DC brushed motor control in cordless power tools with PWM switching at 20 kHz.

IC Role / Device Role / Timing Role: High-side switch in H-bridge configuration; handles bidirectional current up to 195 A peak during stall conditions.

Use Value: 2.0 mΩ R_DS(on) reduces I²R losses by >35% vs. legacy 3.5 mΩ MOSFETs, extending battery runtime by 8–12% at full load.

Use Scenario: Six-step commutation in 400 W BLDC fan driver with space-constrained PCB layout.

IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter leg; operates with 100 ns dead-time and 50 kHz PWM frequency.

Use Value: 9.2 V/ns diode dv/dt rating prevents false turn-on during high dV/dt transitions, eliminating need for external gate clamps.

Synchronous Rectifier

OR-ing Power Switch

Use Scenario: Secondary-side rectification in 60 V input, 12 V output LLC resonant converter for telecom PSUs.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode; driven by transformer-coupled gate signal synchronized to primary switching.

Use Value: Body diode forward voltage V_SD = 1.2 V at 100 A enables >3% efficiency gain over 0.55 V Schottky at same current, reducing secondary-side thermal load.

Use Scenario: Redundant 48 V DC power supply OR-ing in industrial PLC backplane with hot-swap capability.

IC Role / Device Role / Timing Role: Forward conduction switch with active gate control; monitors V_DS to disable during reverse current fault.

Use Value: 195 A package-limited current supports dual 100 A supplies with 20% headroom; avalanche rating ensures survival during hot-plug transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N6F7	R_DS(on) = 2.2 mΩ (typ), Q_g = 175 nC, TO-220FP package, R_θJC = 0.65 °C/W	Lower thermal performance due to higher junction-to-case resistance; unsuitable for >150 W continuous conduction without forced air.	Select when footprint compatibility with TO-220FP is mandatory and peak power is limited to 180 W.
IXFH70N60X3	V_DSS = 600 V, R_DS(on) = 12.5 mΩ, TO-247 package, avalanche rated to 1.2 J	Higher voltage rating trades off on-resistance and gate charge; intended for hard-switched PFC, not low-voltage bridges.	Select only for 400–600 V applications requiring ultra-high avalanche robustness; not a drop-in replacement.

Compared with STL220N6F7 and IXFH70N60X3, IRFS7534PBF delivers superior thermal efficiency (0.51 vs. 0.65 °C/W), lower conduction loss (2.0 vs. 2.2 mΩ), and optimized gate charge for 50–100 kHz bridge operation-making it the preferred choice for high-current, low-voltage (<60 V) switching where thermal density and diode recovery are critical.

Availability

IRFS7534PBF is available at Aetrix Electronics and suitable for brushed motor drives, BLDC inverters, and OR-ing power switches requiring stable component supply across industrial automation, telecom power systems, and battery-powered equipment.

Supply support for IRFS7534PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

This device belongs to the StrongIRFET™ HEXFET® family, engineered for high-current, high-reliability switching in motor drives, power supplies, and redundant power architectures where avalanche ruggedness and thermal stability are non-negotiable.

FAQ

What is the maximum continuous drain current for IRFS7534PBF at 100°C case temperature?

The maximum continuous drain current at T_C = 100°C is 164 A (silicon-limited), as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from the 195 A (T_C = 25°C) package limit, based on linear derating factor of 1.96 W/°C and R_θJC = 0.51 °C/W.

Does IRFS7534PBF require a gate resistor for stable switching in a half-bridge configuration?

Yes-a gate resistor of 2.7 Ω is used in the datasheet's switching time test circuit (Fig 24a) to control dV/dt and suppress oscillation. With its 1.9 Ω internal gate resistance and 186 nC total gate charge, an external 2–5 Ω resistor ensures controlled turn-on/turn-off and prevents shoot-through in bridge legs.

Can IRFS7534PBF replace IRFB7534PBF in existing TO-220 designs?

No-IRFS7534PBF uses TO-262 (ISOTOP) package with different mounting hole spacing, tab size, and thermal interface geometry versus TO-220AB. While both share identical electrical specs, mechanical redesign is required for heatsink attachment, PCB footprint, and creepage/clearance validation.

What is the reverse recovery charge (Q_rr) of the body diode at 125°C junction temperature?

The reverse recovery charge is 83 nC at T_J = 125°C, measured under IF = 100 A, V_R = 51 V, and di/dt = 100 A/µs (per Diode Characteristics table). This value is 17% higher than the 71 nC at 25°C, reflecting increased minority carrier lifetime at elevated temperature.

IRFS7534PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®, StrongIRFET™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 195A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 2.4mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 3.7V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 279 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 10034 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 294W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRFS7534PBF FAQ

1.How can I place an order for IRFS7534PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFS7534PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFS7534PBF reliable?

The price and inventory of IRFS7534PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFS7534PBF is usually 5 days.

3.What payment methods are accepted for IRFS7534PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFS7534PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFS7534PBF?

IRFS7534PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFS7534PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFS7534PBF?

For technical support, including IRFS7534PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFS7534PBF requirements.

6.How does Aetrix verify that IRFS7534PBF is sourced from the original manufacturer or authorized distributors?

All IRFS7534PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFS7534PBF meets industry standards.

7.What is the process for return or replacement of IRFS7534PBF?

All IRFS7534PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFS7534PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFS7534PBF part is unused and in its original packaging.

Return procedure for IRFS7534PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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