Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFS7537PBF

Name: IRFS7537PBF
Brand: Infineon Technologies
SKU: IRFS7537PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRFS7537PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRFS7537PBF.pdf

Description:: MOSFET N CH 60V 173A D2PAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:5,248

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRFS7537PBF from Infineon Technologies (formerly International Rectifier) is a 60V, 173A N-channel enhancement-mode HEXFET® Power MOSFET in TO-262 package, optimized for high-current switching in motor drives and DC/DC converters. It delivers 2.75 mΩ typical R_DS(on) at V_GS = 10 V, supports 700 A pulsed drain current, and features enhanced body diode dV/dt capability up to 10 V/ns at T_J = 175°C - enabling robust operation in BLDC motor half-bridge inverters.

For engineers reviewing the IRFS7537PBF datasheet, IRFS7537PBF pinout, IRFS7537PBF application, or IRFS7537PBF equivalent, key selection criteria include its 60 V V_DS rating, 2.75 mΩ on-resistance, 142 nC total gate charge, avalanche energy rating of 270 mJ (E_AS), and TO-262 thermal resistance of 0.65 °C/W junction-to-case - critical for thermally constrained high-power designs.

Technical Context

This MOSFET employs planar silicon process with optimized cell pitch and trench-assisted source metallization to achieve low R_DS(on) × Q_g figure-of-merit (≈390 Ω·nC). Its gate threshold voltage (2.1–3.7 V) ensures reliable turn-on with standard 5 V logic-level drivers while maintaining noise immunity.

The device integrates a fast, soft-recovery body diode with 39 ns reverse recovery time (T_J = 25°C, I_F = 100 A), rated for 100 A continuous source current and 700 A pulsed source current - supporting synchronous rectification and OR-ing applications without external diode supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - maximum blocking voltage compatible with 48 V nominal bus systems and 60 V automotive/industrial rails.
R_DS(on) typ.	2.75 mΩ at V_GS = 10 V, I_D = 100 A - enables <1.5 W conduction loss at 100 A, reducing heatsink requirements.
I_D cont.	173 A at T_C = 25°C - supports high-current motor phase legs and primary-side switches in resonant converters.
E_AS	270 mJ single-pulse avalanche energy - sustains unclamped inductive switching stress in half-bridge configurations without failure.
Q_g	142 nC typical - determines gate drive power and switching speed; requires ≥2 A peak gate driver for <100 ns turn-on.
trr	39 ns at T_J = 25°C - minimizes commutation losses and EMI in hard-switched topologies like LLC and phase-shifted full-bridge.
R_θJC	0.65 °C/W - enables direct mounting to heatsinks with predictable thermal rise: ΔT_J-C = 150°C at 230 W dissipation.

Pinout & Package

IRFS7537PBF uses the TO-262 (I²PAK) package: 3-pin, single-ended, isolated tab (drain-connected), with industry-standard footprint and screw-mount compatibility. The package provides low-inductance source-drain layout and 1.1 N·m mounting torque specification.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current return path to high-side rail	Electrically connected to metal tab - must be electrically isolated from heatsink unless system ground reference permits.
Source	Power return reference for gate drive and load current	Low-impedance connection point for Kelvin source sensing and gate driver return; critical for stable high-dI/dt switching.
Gate	Control terminal for channel modulation	High-impedance input requiring low-inductance PCB routing; gate resistor selection directly impacts dv/dt control and ringing suppression.

Key Features

Feature	Design Value
Enhanced body diode dV/dt capability	10 V/ns at T_J = 175°C - prevents false turn-on during high-speed commutation in bridge circuits.
Fully characterized avalanche SOA	270 mJ E_AS and 554 mJ E_AS(L=1mH) - enables design margin verification for unclamped inductive loads without derating.
Low C_oss eff. (TR)	880 pF - reduces capacitive turn-off loss and improves efficiency in ZVS/ZCS resonant converters.
Lead-free, RoHS-compliant construction	Meets IPC/JEDEC J-STD-020D reflow profile - supports lead-free manufacturing with peak temperature up to 260°C.
Improved dynamic dV/dt ruggedness	Rated for >50 V/ns transient immunity - suppresses parasitic turn-on in high-frequency, high-side switch applications.

Applications

Brushed Motor Drive

BLDC Motor Inverter

Use Scenario: H-bridge control of 24–48 V DC brushed motors in power tools and industrial actuators.

IC Role / Device Role / Timing Role: High-side and low-side switching element handling bidirectional 150 A peak currents with PWM frequencies up to 20 kHz.

Use Value: 2.75 mΩ R_DS(on) limits conduction loss to ≤2.5 W per FET at 100 A, enabling compact thermal design without forced air cooling.

Use Scenario: Three-phase inverter stage for 48 V battery-powered e-bikes and HVAC blowers.

IC Role / Device Role / Timing Role: Low-side switch in 6-step commutation with 10–15 kHz PWM, leveraging fast 39 ns trr for reduced shoot-through risk.

Use Value: 10 V/ns body diode dV/dt rating prevents false triggering during high dv/dt cross-conduction events, improving system reliability.

Synchronous Rectification

OR-ing Power Switch

Use Scenario: Secondary-side switch in 48 V input, 12 V output LLC resonant DC/DC converter for telecom PSUs.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode, driven by transformer-coupled gate signal synchronized to primary switching.

Use Value: 173 A continuous source current rating supports 12 V/100 A output with <0.5 V forward drop, improving efficiency by 2–3% over discrete diodes.

Use Scenario: Redundant 48 V power supply OR-ing in server backplanes and industrial PLCs.

IC Role / Device Role / Timing Role: Low-loss power path selector with active control of forward voltage drop via gate biasing.

Use Value: 2.75 mΩ on-resistance yields <0.3 V drop at 100 A, minimizing heat generation and enabling parallel operation without thermal runaway.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N6F7	60 V, 220 A, 2.0 mΩ R_DS(on), D²PAK package, higher Q_g (180 nC)	Higher current rating but larger gate charge increases driver complexity and switching loss	Select when higher continuous current headroom is required and gate drive strength supports 180 nC charge
IXFH70N60X3	600 V, 70 A, 15 mΩ, TO-247 package, SiC-enhanced superjunction architecture	Designed for high-voltage, medium-current PFC and SMPS - not a drop-in replacement for 60 V systems	Choose only for 400–600 V bus applications where 60 V rating is insufficient; incompatible with 48 V motor drive layouts

Compared with STL220N6F7 and IXFH70N60X3, IRFS7537PBF offers optimal balance of low R_DS(on), moderate Q_g, and TO-262 thermal performance for 48 V motor and converter applications - whereas STL220N6F7 trades higher gate drive demand for extra current margin, and IXFH70N60X3 targets entirely different voltage-class systems.

Availability

IRFS7537PBF is available at Aetrix Electronics and suitable for brushed motor drives, BLDC inverters, synchronous rectifiers, and OR-ing power switches requiring stable component supply across industrial automation, e-mobility, and telecom infrastructure programs.

Supply support for IRFS7537PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon-based power devices and wide-bandgap technologies.

This device belongs to the StrongIRFET™ family - engineered specifically for high-current, high-ruggedness switching in motor control, UPS, and industrial power conversion where avalanche endurance and body diode robustness are mission-critical.

FAQ

What is the maximum allowable case temperature for continuous operation?

The IRFS7537PBF supports continuous operation up to T_C = 100°C, delivering 122 A continuous drain current at that temperature. Derating follows a linear 1.5 W/°C factor beyond 25°C case temperature, with absolute maximum junction temperature limited to +175°C. Thermal design must ensure R_θJC + R_θCS + R_θSA keeps T_J ≤ 175°C under worst-case load and ambient conditions.

Does IRFS7537PBF require a negative gate voltage for reliable turn-off?

No - the device has a gate threshold voltage range of 2.1–3.7 V and is fully specified for 0 V turn-off. Applying –5 V to –10 V gate-source voltage improves noise immunity and reduces Miller-induced turn-on risk in high-dv/dt environments, but is not required for functional operation. Gate drive must stay within ±20 V absolute maximum ratings.

Can IRFS7537PBF be used in parallel configurations?

Yes - its positive R_DS(on) temperature coefficient (normalized resistance increases with junction temperature) enables inherent current sharing when paralleled with identical units. Successful implementation requires matched gate drive impedance, symmetrical PCB layout, and shared heatsinking to minimize thermal imbalance. Derate total current by 15% for two devices and 25% for three or more.

Is the body diode suitable for continuous freewheeling in hard-switched topologies?

Yes - the body diode is fully characterized for 173 A continuous source current and 700 A pulsed current, with 39 ns reverse recovery time at 25°C. However, in hard-switched applications above 50 kHz, its recovery charge (Q_rr = 46 nC) contributes measurable switching loss; soft-switching or synchronous rectification is recommended for highest efficiency.

IRFS7537PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®, StrongIRFET™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 173A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 3.3mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 3.7V @ 150µA

Gate Charge (Qg) (Max) @ Vgs:: 210 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7020 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 230W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRFS7537PBF FAQ

1.How can I place an order for IRFS7537PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFS7537PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFS7537PBF reliable?

The price and inventory of IRFS7537PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFS7537PBF is usually 5 days.

3.What payment methods are accepted for IRFS7537PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFS7537PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFS7537PBF?

IRFS7537PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFS7537PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFS7537PBF?

For technical support, including IRFS7537PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFS7537PBF requirements.

6.How does Aetrix verify that IRFS7537PBF is sourced from the original manufacturer or authorized distributors?

All IRFS7537PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFS7537PBF meets industry standards.

7.What is the process for return or replacement of IRFS7537PBF?

All IRFS7537PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFS7537PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFS7537PBF part is unused and in its original packaging.

Return procedure for IRFS7537PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…