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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFS7540PBF

Name: IRFS7540PBF
Brand: Infineon Technologies
SKU: IRFS7540PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFS7540PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRFS7540PBF.pdf

Description:: MOSFET N CH 60V 110A D2PAK

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Product details

Overview

IRFS7540PBF from Infineon Technologies (formerly International Rectifier) is a 60 V, 110 A N-channel enhancement-mode HEXFET® Power MOSFET in D2PAK (TO-263) package, optimized for high-current switching in motor drives and DC/DC converters. It delivers 4.2 mΩ typical R_DS(on) at V_GS = 10 V, supports 430 A pulsed drain current, and features enhanced body diode dV/dt (11 V/ns) and dI/dt capability for robust synchronous rectification.

For engineers reviewing the IRFS7540PBF datasheet, IRFS7540PBF pinout, IRFS7540PBF application, or IRFS7540PBF equivalent, key selection criteria include its 60 V V_DSS, 4.2 mΩ on-resistance at 65 A, 88 nC total gate charge, avalanche energy rating (180 mJ single-pulse), and D2PAK thermal performance (R_θJA = 40 °C/W on PCB mount).

Technical Context

This MOSFET employs planar silicon process with optimized cell layout to achieve low R_DS(on) while maintaining strong avalanche ruggedness (E_AS = 180 mJ) and dynamic dV/dt immunity. Its gate threshold voltage (2.1–3.7 V) enables reliable turn-on with standard 5 V or 10 V logic-level drivers.

The device integrates a fast, soft-recovery body diode (t_rr = 33 ns at 25 °C, Q_rr = 36 nC) with controlled reverse recovery characteristics-critical for half-bridge and synchronous rectifier topologies where shoot-through and EMI must be minimized.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Maximum blocking voltage; suitable for 48 V bus systems with margin against transients.
R_DS(on) typ.	4.2 mΩ @ V_GS = 10 V, I_D = 65 A - Enables <1 W conduction loss at 65 A, reducing heatsink requirements.
I_D continuous	110 A @ T_C = 25 °C - Supports high-power motor drive and inverter stages without parallel devices.
Q_g total	88 nC - Determines gate driver power requirement; compatible with common 1–2 A peak gate drivers.
E_AS	180 mJ (single-pulse) - Withstands unclamped inductive switching events in bridge circuits without failure.
t_rr	33 ns @ T_J = 25 °C - Limits reverse recovery losses and EMI generation during hard-switching transitions.
R_θJA	40 °C/W (PCB mount) - Achievable thermal resistance on 1"² FR-4 board enables compact layout without forced air.

Pinout & Package

IRFS7540PBF is housed in a surface-mount D2PAK (TO-263) package with three terminals: Drain (D), Source (S), and Gate (G). The exposed drain pad provides low-inductance, high-current path and serves as primary thermal interface to PCB copper.

Pin/Terminal	Circuit Role	Design Meaning
D (Drain)	Main high-side current path terminal	Connected to high-voltage rail; electrically and thermally tied to large copper pour for conduction and cooling.
S (Source)	Reference node for gate drive and current sensing	Provides return path for load current; used as ground reference for gate driver ICs and shunt resistors.
G (Gate)	Control input for channel modulation	High-impedance input requiring <100 nA leakage; sensitive to ESD and ringing-requires local RC snubber or gate resistor.

Key Features

Feature	Design Value
Enhanced body diode dV/dt capability	11 V/ns at T_J = 175 °C - Prevents false turn-on during high-speed commutation in half-bridge configurations.
Fully characterized avalanche SOA	180 mJ single-pulse, 313 mJ thermally limited - Enables reliable operation in unclamped inductive switching without external clamping.
Low C_oss eff. (TR)	550 pF - Reduces turn-off energy loss and improves efficiency in resonant and ZVS topologies.
Lead-free, RoHS-compliant construction	Meets IPC-J-STD-020 moisture sensitivity level 1 - Allows standard reflow profiles without baking or special handling.
Improved dynamic dV/dt ruggedness	Tested per JEDEC JESD22-A114 - Ensures stable operation under fast-rising edge conditions up to 50 V/ns.

Applications

Brushed Motor Drive

BLDC Motor Inverter

Use Scenario: H-bridge control of 24–48 V DC motors in power tools and industrial actuators.

IC Role / Device Role / Timing Role: High-current half-bridge switch enabling bidirectional torque and regenerative braking.

Use Value: 4.2 mΩ R_DS(on) minimizes I²R loss at 60–100 A peak, extending battery runtime and reducing thermal stress on PCB traces.

Use Scenario: Three-phase inverter stage driving permanent magnet BLDC motors in HVAC blowers and e-bike controllers.

IC Role / Device Role / Timing Role: Low-loss, fast-switching power switch in each leg of the inverter bridge.

Use Value: 33 ns t_rr and soft recovery reduce voltage overshoot and EMI, enabling higher PWM frequencies (>20 kHz) without snubbers.

Synchronous Rectification

OR-ing Power Supply

Use Scenario: Secondary-side switching in isolated 12 V/48 V DC/DC converters for telecom and server PSUs.

IC Role / Device Role / Timing Role: Active replacement of Schottky diodes to reduce forward voltage drop and conduction loss.

Use Value: Body diode V_SD ≤ 1.2 V at 65 A and low Q_rr (36 nC) enable >95% efficiency at full load with minimal heat generation.

Use Scenario: Redundant 12 V or 48 V power inputs in industrial PLCs and network switches.

IC Role / Device Role / Timing Role: Low-forward-drop OR-ing switch replacing discrete diodes to minimize voltage drop and power loss.

Use Value: 4.2 mΩ on-resistance yields <0.5 V drop at 100 A, improving system efficiency and eliminating thermal runaway risk in parallel supplies.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N6F7	60 V, 220 A, R_DS(on) = 2.2 mΩ (typ), DFN8 5×6 mm package	Higher current rating but smaller footprint; requires careful PCB thermal design due to lower R_θJA margin	Preferred for space-constrained, high-density designs where board area is critical and thermal vias can be deployed.
IXTP110N065T	65 V, 110 A, R_DS(on) = 5.2 mΩ (max), TO-220 package	Through-hole mounting; higher R_DS(on) and larger R_θJC (1.0 °C/W) than IRFS7540PBF	Selected when legacy through-hole assembly is required or when mechanical robustness outweighs thermal efficiency needs.

Compared with STL220N6F7 and IXTP110N065T, IRFS7540PBF offers optimal balance of low on-resistance (4.2 mΩ), proven avalanche reliability (180 mJ), and D2PAK manufacturability-making it ideal for production-grade motor drives and power supplies where thermal management and supply chain stability are prioritized.

Availability

IRFS7540PBF is available at Aetrix Electronics and suitable for brushed motor drives, BLDC inverters, and synchronous rectifier circuits requiring stable component supply across automotive aftermarket, industrial automation, and renewable energy OEM programs.

Supply support for IRFS7540PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon-based power devices and wide-bandgap technologies.

This part belongs to the StrongIRFET™ family of high-current, low-R_DS(on) MOSFETs engineered for demanding switching applications in motor control, power conversion, and industrial power systems.

FAQ

What is the maximum junction temperature for IRFS7540PBF?

The absolute maximum operating junction temperature is +175 °C, and the storage temperature range is –55 °C to +175 °C. Thermal design must ensure that steady-state and transient power dissipation-calculated using R_θJC = 0.95 °C/W and R_θJA = 40 °C/W-keeps T_J below this limit under worst-case load and ambient conditions.

Does IRFS7540PBF require a gate resistor, and what value is recommended?

Yes-a series gate resistor is required to dampen ringing and control dv/dt. For 65 A switching with typical gate drivers, a 2.7 Ω resistor is used in evaluation (per datasheet Fig. 24a); values between 2.2 Ω and 10 Ω are common depending on switching speed vs. EMI trade-offs and driver output capability.

Can IRFS7540PBF be used in avalanche mode, and how is energy rating determined?

Yes-it is fully characterized for single-pulse avalanche with E_AS = 180 mJ (T_J start = 25 °C) and 313 mJ (T_J start = 25 °C, thermally limited). Energy rating depends on pulse width, starting junction temperature, and circuit inductance (L = 86 µH per Fig. 15); operation must stay within the Safe Operating Area curves in Fig. 10 and 16.

How does the body diode performance compare to discrete Schottky diodes in synchronous rectification?

The integrated body diode has V_SD ≤ 1.2 V at 65 A and t_rr = 33 ns-lower forward drop than most 60 V Schottkys (typically 0.5–0.8 V at low current but rising sharply above 20 A), and more predictable recovery than fast recovery diodes. Its soft recovery reduces voltage spikes, making it preferable in medium-frequency (<100 kHz) synchronous rectifiers where cost and layout simplicity matter.

IRFS7540PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®, StrongIRFET™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 110A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 5.1mOhm @ 65A, 10V

Vgs(th) (Max) @ Id:: 3.7V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 130 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4555 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 160W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRFS7540PBF FAQ

1.How can I place an order for IRFS7540PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFS7540PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFS7540PBF reliable?

The price and inventory of IRFS7540PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFS7540PBF is usually 5 days.

3.What payment methods are accepted for IRFS7540PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFS7540PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFS7540PBF?

IRFS7540PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFS7540PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFS7540PBF?

For technical support, including IRFS7540PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFS7540PBF requirements.

6.How does Aetrix verify that IRFS7540PBF is sourced from the original manufacturer or authorized distributors?

All IRFS7540PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFS7540PBF meets industry standards.

7.What is the process for return or replacement of IRFS7540PBF?

All IRFS7540PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFS7540PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFS7540PBF part is unused and in its original packaging.

Return procedure for IRFS7540PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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