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Infineon Technologies IRFS7540TRLPBF
- Part No.:
- IRFS7540TRLPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRFS7540TRLPBF.pdf
- Description:
- MOSFET N-CH 60V 110A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:4,886
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Product details
Overview
IRFS7540TRLPBF from Infineon Technologies (formerly International Rectifier) is a 60V, 110A N-channel enhancement-mode HEXFET® Power MOSFET in D2PAK (TO-263) package, optimized for high-current switching in motor drives and DC/DC converters. It delivers 4.2 mΩ typical RDS(on) at VGS = 10 V, supports 430 A pulsed drain current, and features enhanced body diode dV/dt and dI/dt capability for robust synchronous rectification.
For engineers reviewing the IRFS7540TRLPBF datasheet, IRFS7540TRLPBF pinout, IRFS7540TRLPBF application, or IRFS7540TRLPBF equivalent, key selection criteria include its 60 V VDS, 4.2 mΩ RDS(on), 88 nC total gate charge, avalanche-rated 180 mJ EAS, and D2PAK thermal performance with RθJC = 0.95 °C/W.
Technical Context
This MOSFET employs planar silicon process technology with optimized cell pitch and trench-assisted charge balance to achieve low on-resistance while maintaining high avalanche ruggedness. Its gate threshold voltage (2.1–3.7 V) enables reliable turn-on with standard 5 V or 10 V logic-level drivers.
The device integrates a fast, soft-recovery body diode characterized for 33 ns reverse recovery time and 11 V/ns peak dv/dt immunity at TJ = 175 °C - critical for half-bridge and resonant topologies where cross-conduction and diode snap-off must be minimized.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum blocking voltage compatible with 48 V nominal bus systems and 24 V industrial power rails. |
| RDS(on) max | 5.1 mΩ @ VGS = 10 V, ID = 65 A - Enables <1 W conduction loss at 100 A continuous, reducing heatsink requirements. |
| ID continuous | 110 A @ TC = 25 °C - Supports high-current motor phase legs and OR-ing switches without parallel devices. |
| Qg typ | 88 nC - Determines gate drive power and switching speed; pairs with 2.7 Ω gate resistor for ~100 ns turn-off delay in hard-switched converters. |
| EAS | 180 mJ (single-pulse, thermally limited) - Withstands unclamped inductive energy in BLDC commutation or fault conditions without failure. |
| trr | 33 ns @ TJ = 25 °C - Minimizes switching losses and EMI during body-diode conduction in synchronous rectifiers. |
| RθJC | 0.95 °C/W - Enables direct mounting to heatsinks for >100 W power dissipation with manageable junction temperature rise. |
Pinout & Package
D2PAK (TO-263) surface-mount package with isolated tab (drain-connected), designed for high-current PCB routing and thermal transfer via exposed copper pad. Standard tape-and-reel packaging (800 pcs/reel).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal (S) | Low-side reference node; connects to ground or low-side switch node; carries full load current in low-side configurations. |
| Pin 2 (Gate) | Control input (G) | High-impedance MOSFET control node; requires <88 nC charge for full enhancement; sensitive to ringing due to 2.2 Ω internal gate resistance. |
| Pin 3 (Drain) | Power output (D) | High-current output node tied to heatsink tab; electrically connected to exposed metal pad; handles 110 A continuous and 430 A pulsed current. |
Key Features
| Feature | Design Value |
|---|---|
| Enhanced body diode dV/dt capability | 11 V/ns at TJ = 175 °C - Prevents false turn-on during high-speed voltage transients in bridge arms. |
| Full avalanche SOA characterization | 180 mJ single-pulse EAS with validated thermal limits - Eliminates need for external snubbers in inductive switching applications. |
| Lead-free, RoHS-compliant construction | Meets IPC-J-STD-020 moisture sensitivity level 1 - Enables standard reflow assembly without baking or special handling. |
| Low Coss eff. (TR) | 550 pF - Reduces capacitive turn-on losses and improves efficiency in ZVS resonant converters operating above 100 kHz. |
| Improved dynamic dV/dt ruggedness | Rated for >50 V/ns transient immunity - Ensures stable operation under fast edge rates in SiC/GaN co-design environments. |
Applications
| Brushed Motor Drive | BLDC Motor Phase Switch |
|---|---|
|
Use Scenario: High-power cordless tools and automotive window lifters requiring bidirectional 40–100 A DC switching. IC Role / Device Role / Timing Role: Low-side N-channel switch in H-bridge configuration, driven by PWM at 10–20 kHz with dead-time control. Use Value: 4.2 mΩ RDS(on) reduces I²R losses by >30% vs. legacy 8 mΩ MOSFETs, extending battery runtime and lowering thermal stress. |
Use Scenario: Three-phase inverter for e-bike and scooter controllers operating from 36–48 V battery packs. IC Role / Device Role / Timing Role: Upper- and lower-leg switching element in 6-step commutation, handling 65 A RMS phase current. Use Value: 33 ns trr and soft recovery minimize shoot-through risk and reduce EMI filtering burden compared to standard diodes. |
| Synchronous Rectifier | OR-ing Power Switch |
|
Use Scenario: Secondary-side switching in isolated 48 V → 12 V DC/DC converters for telecom and server PSUs. IC Role / Device Role / Timing Role: Active replacement of Schottky diode in forward/flyback topology, synchronized to primary-side switching. Use Value: 1.2 V VSD at 65 A and low Qrr cut conduction losses by 45% versus 40 V Schottky, improving converter efficiency from 92% to 94.5%. |
Use Scenario: Redundant 24–60 V power distribution in industrial PLCs and medical equipment with dual-input supplies. IC Role / Device Role / Timing Role: Back-to-back configured MOSFET acting as ideal diode, controlled by dedicated OR-ing controller. Use Value: 5.1 mΩ RDS(on) limits voltage drop to <500 mV at 100 A, enabling hot-swap capability and eliminating 1.5 W per diode heat generation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-current N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N6F7 | 60 V, 220 A, 2.2 mΩ RDS(on), TO-220FP package, higher capacitance (Ciss = 5,800 pF) | Better conduction but slower switching; unsuitable for >100 kHz resonant designs due to higher Qg (140 nC) | Select when thermal budget dominates over switching loss and board space allows larger through-hole footprint. |
| IXFH70N60X3 | 600 V, 70 A, 22 mΩ, TO-247 package, superjunction architecture, higher VGS(th) (3.5–5.5 V) | Designed for high-voltage AC/DC PFC stages; not rated for 48 V bus avalanche or body diode commutation | Use only in high-voltage offline applications; avoid in low-voltage motor drives due to excessive conduction loss and poor diode recovery. |
Compared with STL220N6F7 and IXFH70N60X3, IRFS7540TRLPBF offers optimal balance of low RDS(on), moderate Qg, and proven body diode ruggedness - making it uniquely suited for 48 V-class motor drives and synchronous rectifiers where both conduction efficiency and switching reliability are critical.
Availability
IRFS7540TRLPBF is available at Aetrix Electronics and suitable for brushed motor drives, BLDC inverters, and synchronous rectifier circuits requiring stable component supply across industrial, automotive, and renewable energy programs.
Supply support for IRFS7540TRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon and wide-bandgap power devices.
This device belongs to the StrongIRFET™ family - engineered specifically for high-current, high-ruggedness switching in motor control, power conversion, and industrial automation systems where reliability under repetitive stress is mandatory.
FAQ
Is IRFS7540TRLPBF pin-compatible with IRFS7430PbF?
No. IRFS7540TRLPBF has identical D2PAK pinout (G-S-D), but IRFS7430PbF is a 40 V, 140 A device with different RDS(on) (3.0 mΩ), gate charge (105 nC), and avalanche rating (120 mJ). Substitution requires validation of voltage margin, thermal design, and driver capability.
What is the maximum recommended gate resistor for hard-switched 100 kHz operation?
A 2.7 Ω gate resistor is specified in the datasheet for 100 kHz switching with 110 A load. This value balances turn-off delay (~58 ns) and overshoot suppression. For layouts with >5 nH gate loop inductance, increase to 4.7 Ω to damp ringing without exceeding 100 ns td(off).
Can IRFS7540TRLPBF be used in parallel configurations?
Yes - its positive RDS(on) temperature coefficient (48 mV/°C) ensures natural current sharing. Parallel operation requires matched gate drive paths, symmetrical PCB layout, and individual 10 Ω gate resistors to prevent oscillation. Derate total current by 15% for thermal margin.
Does the device require a negative gate voltage for safe turn-off in bridge configurations?
No. The gate threshold voltage (2.1–3.7 V) and ±20 V VGS rating allow safe turn-off with 0 V gate drive. However, applying –5 V improves noise immunity in high-dV/dt environments and reduces Miller-induced false turn-on risk in high-side configurations.
IRFS7540TRLPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®, StrongIRFET™
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 110A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 6V, 10V
- Rds On (Max) @ Id, Vgs:
- 5.1mOhm @ 65A, 10V
- Vgs(th) (Max) @ Id:
- 3.7V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:
- 130 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4555 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 160W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO263-3
IRFS7540TRLPBF FAQ
1.How can I place an order for IRFS7540TRLPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFS7540TRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFS7540TRLPBF reliable?
The price and inventory of IRFS7540TRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFS7540TRLPBF is usually 5 days.
3.What payment methods are accepted for IRFS7540TRLPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFS7540TRLPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFS7540TRLPBF?
IRFS7540TRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFS7540TRLPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFS7540TRLPBF?
For technical support, including IRFS7540TRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFS7540TRLPBF requirements.
6.How does Aetrix verify that IRFS7540TRLPBF is sourced from the original manufacturer or authorized distributors?
All IRFS7540TRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFS7540TRLPBF meets industry standards.
7.What is the process for return or replacement of IRFS7540TRLPBF?
All IRFS7540TRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFS7540TRLPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFS7540TRLPBF part is unused and in its original packaging.
Return procedure for IRFS7540TRLPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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