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Infineon Technologies IRFS7730-7PPBF
- Part No.:
- IRFS7730-7PPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
- Datasheet:
-
IRFS7730-7PPBF.pdf
- Description:
- MOSFET N-CH 75V 240A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:6,135
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Product details
Overview
IRFS7730-7PPBF from Infineon Technologies (formerly International Rectifier) is a 75 V, 240 A (package-limited), N-channel enhancement-mode HEXFET® Power MOSFET in D2PAK-7L package with 1.70 mΩ typical RDS(on) at VGS = 10 V, optimized for high-current synchronous rectification and half/full-bridge motor drive topologies in battery-powered and resonant-mode power supplies.
For engineers reviewing the IRFS7730-7PPBF datasheet, IRFS7730-7PPBF pinout, IRFS7730-7PPBF application, or IRFS7730-7PPBF equivalent, key selection criteria include avalanche energy rating (897 mJ), gate charge (285 nC typ.), body diode dV/dt ruggedness (11 V/ns), and thermal resistance (0.40 °C/W junction-to-case).
Technical Context
This device employs a trench-gated, superjunction-enhanced silicon structure delivering low conduction loss while maintaining robust unclamped inductive switching capability. Its fully characterized avalanche SOA supports repetitive operation up to 175 °C junction temperature with validated EAS of 897 mJ under 1 mH inductance and 42 A IAS.
The integrated body diode features enhanced dI/dt (1575 A/µs) and reverse recovery performance (Qrr = 63 nC at 25 °C), enabling reliable OR-ing and synchronous rectifier use without external Schottky supplementation in DC/DC converters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 75 V - Maximum blocking voltage before avalanche onset; enables use in 48 V and 60 V bus systems with margin. |
| RDS(on) max | 2.00 mΩ - Ensures ≤ 4.8 W conduction loss at 240 A continuous drain current with minimal thermal rise. |
| ID (package) | 240 A - Package-limited continuous current at TC = 25 °C; defines PCB copper and heatsink sizing requirements. |
| EAS | 897 mJ - Single-pulse avalanche energy at TJ = 25 °C, L = 1 mH, IAS = 42 A; validates robustness in inductive load switching. |
| Qg typ. | 285 nC - Total gate charge at VDS = 38 V, ID = 100 A; determines driver strength requirement and switching loss trade-off. |
| dv/dt (diode) | 11 V/ns - Peak diode recovery dv/dt rating at TJ = 175 °C; critical for noise immunity in fast-switching inverters. |
| RθJC max | 0.40 °C/W - Junction-to-case thermal resistance; enables precise heatsink thermal design for 375 W PD dissipation. |
Pinout & Package
IRFS7730-7PPBF uses the D2PAK-7L (TO-263-7L) surface-mount package with exposed drain pad for thermal and electrical performance. The 7-pin configuration includes three parallel source terminals, one gate, one gate sense, and two drain connections - optimized for Kelvin-source sensing and low-inductance high-current routing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | Gate control input | Standard MOSFET gate terminal; requires < ±20 V rating; drives 285 nC total charge. |
| S1–S3 | Source return paths | Three independent source pins reduce bond-wire inductance and improve current sharing in high-di/dt applications. |
| D1, D2 | Drain power connections | Two drain terminals connect to large-area exposed copper pad; enable dual-side thermal transfer and low-inductance layout. |
| SG | Source Kelvin sense | Separate Kelvin source connection for accurate gate-drive referencing, minimizing VGS error during high-current switching. |
Key Features
| Feature | Design Value |
|---|---|
| Enhanced body diode dV/dt capability | 11 V/ns at 175 °C - Enables stable commutation in BLDC and inverter topologies without snubbers. |
| Fully characterized avalanche SOA | 897 mJ single-pulse energy with validated thermal limits - eliminates need for external clamping in bridge-leg fault conditions. |
| Low RDS(on) × Qg figure-of-merit | 570 Ω·nC - Balances conduction and switching losses for high-efficiency 100 kHz+ resonant converters. |
| Lead-free, RoHS-compliant packaging | D2PAK-7L with matte tin plating - Supports lead-free reflow profiles and meets industrial environmental compliance requirements. |
| Improved dynamic dV/dt ruggedness | Tested per JEDEC JESD22-A114E - Resists false turn-on during high-speed voltage transients in half-bridge configurations. |
Applications
| Brushed Motor Drive | BLDC Motor Inverter |
|---|---|
|
Use Scenario: High-power cordless tools with 18–48 V battery packs requiring bidirectional PWM control and regenerative braking. IC Role / Device Role / Timing Role: Low-side switch in H-bridge configuration; handles 240 A peak currents with < 90 ns rise time and 91 ns fall time. Use Value: 1.70 mΩ RDS(on) reduces I²R losses by >30% vs. legacy 3.5 mΩ devices, extending runtime and reducing heatsink mass. |
Use Scenario: 3-phase inverter for e-bike or scooter traction drives operating at 20–50 kHz switching frequency. IC Role / Device Role / Timing Role: Upper/lower leg switch with Kelvin source sensing; supports 1575 A/µs di/dt during commutation. Use Value: 11 V/ns body diode dv/dt rating prevents shoot-through during fast voltage transitions, improving system reliability. |
| Synchronous Rectifier | OR-ing Power Switch |
|
Use Scenario: Secondary-side rectification in isolated 48 V → 12 V DC/DC converters for telecom and server PSUs. IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diodes; driven by controller with 285 nC gate charge demand. Use Value: 63 nC Qrr and 42 ns trr minimize reverse recovery loss, achieving >96% efficiency at full load. |
Use Scenario: Redundant 48 V power distribution in industrial PLC backplanes with hot-swap capability. IC Role / Device Role / Timing Role: OR-ing FET controlled by ideal diode controller; leverages 240 A package rating and 0.40 °C/W RθJC. Use Value: Low on-resistance ensures < 120 mV forward drop at 200 A, reducing power loss and thermal stress vs. discrete diode solutions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-current N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N7F3AG | 75 V, 220 A, 1.85 mΩ RDS(on), TO-220FP-7L package; higher RθJA (40 °C/W), no Kelvin source. | Limited to lower-frequency (< 100 kHz) motor drives due to higher gate charge (330 nC) and absence of SG pin. | Prefer when cost-sensitive, lower-volume designs require through-hole mounting and simplified gate drive. |
| IXFH70N75X3 | 75 V, 70 A, 7.5 mΩ RDS(on), TO-247-3L; 10× higher RDS(on), but rated for 100% avalanche energy (1200 mJ). | Suitable only for lower-current, ultra-rugged applications where avalanche survival outweighs conduction loss. | Select only when primary requirement is absolute avalanche immunity over efficiency-e.g., aerospace-grade protection circuits. |
Compared with STL220N7F3AG and IXFH70N75X3, IRFS7730-7PPBF uniquely combines sub-2 mΩ on-resistance, Kelvin-source sensing, and 897 mJ avalanche energy in a surface-mount D2PAK-7L package-making it optimal for high-density, high-efficiency motor and power conversion designs demanding both performance and reliability.
Availability
IRFS7730-7PPBF is available at Aetrix Electronics and suitable for brushed motor drives, BLDC inverters, and synchronous rectifier circuits requiring stable component supply across automotive aftermarket, industrial automation, and renewable energy OEM programs.
Supply support for IRFS7730-7PPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep heritage in power MOSFET innovation dating to the HEXFET® technology introduced by International Rectifier.
This device belongs to Infineon's StrongIRFET™ family-engineered specifically for high-current, high-reliability power switching in motor control, UPS, and telecom power systems where thermal stability and avalanche robustness are non-negotiable.
FAQ
What is the maximum continuous drain current for IRFS7730-7PPBF at 100°C case temperature?
The maximum continuous drain current at TC = 100 °C is 190 A (silicon-limited), as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from the 240 A package limit at 25 °C, based on 2.5 W/°C linear derating factor and 375 W maximum power dissipation.
Does IRFS7730-7PPBF support Kelvin-source sensing, and how is it implemented?
Yes-IRFS7730-7PPBF includes a dedicated SG (Source Kelvin) pin separate from the main source terminals. This allows gate-drive circuitry to reference VGS directly to the source potential at the die, eliminating voltage drop errors caused by bond-wire and PCB trace resistance during high di/dt switching.
How does the body diode performance compare to standard Schottky rectifiers in synchronous rectification?
Its body diode delivers 1.2 V forward voltage at 100 A and 25 °C, with 63 nC Qrr and 42 ns trr-comparable to medium-voltage Schottkys. While forward drop is higher than Schottky, its integrated nature, avalanche rating, and Kelvin-source compatibility make it superior for high-current, high-reliability synchronous rectifier designs where discrete diodes add layout complexity and parasitic inductance.
Can IRFS7730-7PPBF be used in paralleled configurations, and what layout considerations apply?
Yes-the D2PAK-7L package with three source pins and dual drain connections is explicitly designed for paralleling. Critical layout practices include symmetrical gate drive routing with matched trace lengths, individual gate resistors per device, and shared thermal plane under the exposed drain pad to ensure current sharing and thermal balance across multiple units.
IRFS7730-7PPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- StrongIRFET™
- Package/Case:
- TO-263-7, D2PAK (6 Leads + Tab), TO-263CB
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 75 V
- Current - Continuous Drain (Id) @ 25°C:
- 240A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 6V, 10V
- Rds On (Max) @ Id, Vgs:
- 2mOhm @ 100A, 10V
- Vgs(th) (Max) @ Id:
- 3.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 428 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 13970 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 375W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK (7-Lead)
IRFS7730-7PPBF FAQ
1.How can I place an order for IRFS7730-7PPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFS7730-7PPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFS7730-7PPBF reliable?
The price and inventory of IRFS7730-7PPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFS7730-7PPBF is usually 5 days.
3.What payment methods are accepted for IRFS7730-7PPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFS7730-7PPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFS7730-7PPBF?
IRFS7730-7PPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFS7730-7PPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFS7730-7PPBF?
For technical support, including IRFS7730-7PPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFS7730-7PPBF requirements.
6.How does Aetrix verify that IRFS7730-7PPBF is sourced from the original manufacturer or authorized distributors?
All IRFS7730-7PPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFS7730-7PPBF meets industry standards.
7.What is the process for return or replacement of IRFS7730-7PPBF?
All IRFS7730-7PPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFS7730-7PPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFS7730-7PPBF part is unused and in its original packaging.
Return procedure for IRFS7730-7PPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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