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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFS7730PBF

Name: IRFS7730PBF
Brand: Infineon Technologies
SKU: IRFS7730PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFS7730PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRFS7730PBF.pdf

Description:: MOSFET N-CH 75V 195A D2PAK

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Product details

Overview

IRFS7730PBF from Infineon Technologies (formerly International Rectifier) is a 75V, 2.2 mΩ typ. N-channel D2PAK-3L Power MOSFET optimized for high-current synchronous rectification and bridge-leg switching in DC/DC converters, BLDC motor drives, and OR-ing applications. It delivers 195A package-limited continuous drain current at 25°C, features enhanced body diode dV/dt (16 V/ns) and dI/dt capability, and supports robust unclamped inductive switching with 465 mJ single-pulse avalanche energy.

For engineers reviewing the IRFS7730PBF datasheet, IRFS7730PBF pinout, IRFS7730PBF application, or IRFS7730PBF equivalent, this device is selected for high-efficiency, thermally demanding power stages where low R_DS(on), fast switching (t_r = 120 ns), and rugged body diode recovery (t_rr = 44 ns @ 25°C) are critical to system reliability and conduction loss reduction.

Technical Context

This MOSFET employs a trench-gated HEXFET® structure with optimized cell pitch and source bonding technology to achieve 2.2 mΩ R_DS(on) at V_GS = 10 V while maintaining 75 V V_(BR)DSS. Its gate threshold voltage (2.1–3.7 V) enables compatibility with standard 5 V and 10 V logic-level drivers, and its total gate charge (271 nC typ.) is calibrated for efficient hard-switching in half-bridge topologies up to 100 kHz.

The device integrates a co-packaged, fast-recovery body diode with 1.2 V forward voltage at 100 A and 16 V/ns peak reverse recovery dv/dt rating-critical for minimizing commutation losses and preventing false turn-on in synchronous rectifiers and resonant converters operating above 60 V bus voltages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	75 V - Maximum blocking voltage before avalanche; sets upper limit for DC bus in buck, boost, and inverter stages.
R_DS(on) typ.	2.2 mΩ @ V_GS = 10 V, I_D = 100 A - Enables <1.2 W conduction loss at 150 A, reducing heatsink requirements in high-current paths.
I_D (Package)	195 A @ T_C = 25°C - Determined by leadframe thermal and current-carrying capacity; defines maximum safe steady-state current in PCB-mounted D2PAK layout.
Q_g typ.	271 nC - Total gate charge required for full enhancement; determines driver power and switching speed trade-off in 10–100 kHz hard-switched bridges.
t_r/t_f	120 ns / 115 ns @ I_D = 100 A - Fast edge rates minimize transition losses during PWM switching in motor control and SMPS.
E_AS	465 mJ (single-pulse, 93 µH, 100 A) - Thermal avalanche energy rating ensures survivability during short-circuit or inductive load transients without junction failure.
V_SD	1.2 V @ I_S = 100 A, T_J = 25°C - Low body diode forward drop reduces reverse conduction loss in synchronous rectification and freewheeling modes.

Pinout & Package

D2PAK-3L (TO-263-3) package with exposed drain pad for low thermal resistance (R_θJC = 0.40 °C/W). Standard surface-mount footprint compatible with IPC-7351B SO-201A outline; requires thermal via array under drain pad for optimal heat transfer to inner copper layers.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Control terminal; accepts 10 V drive for full enhancement; gate resistance (2.1 Ω typ.) influences Miller plateau timing and EMI profile.
Pin 2 (D)	Drain	Main high-side current path; electrically connected to exposed metal tab; must be isolated from heatsink unless referenced to same potential.
Pin 3 (S)	Source	Power return node and gate reference; bonded with multiple heavy wires to support 195 A package-limited current; defines local ground for gate driver.

Key Features

Feature	Design Value
Enhanced body diode dV/dt capability	16 V/ns at T_J = 175°C - Prevents spurious turn-on during high-speed commutation in synchronous rectifiers and half-bridges.
Fully characterized avalanche SOA	465 mJ single-pulse, 898 mJ alternate condition - Enables reliable operation under unclamped inductive fault conditions without derating.
Low C_oss eff. (TR)	1275 pF - Reduces capacitive turn-off loss and improves zero-voltage switching (ZVS) margin in resonant LLC and phase-shifted full-bridge designs.
Improved dynamic dV/dt ruggedness	Validated per JEDEC JESD22-A114 - Ensures stable gate bias during rapid drain voltage transients up to 75 V, eliminating need for external gate clamping.
Lead-free, RoHS-compliant construction	Meets IPC/JEDEC J-STD-020D reflow profile - Supports lead-free assembly with peak temperature up to 260°C and eliminates post-solder cleaning requirements.

Applications

Brushed Motor Drive

BLDC Motor Inverter

Use Scenario: High-power cordless tools and industrial actuators using H-bridge PWM control at 20–50 kHz.

IC Role / Device Role / Timing Role: Low-side switch in dual half-bridge configuration; handles bidirectional 150 A peak current with minimal conduction loss.

Use Value: 2.2 mΩ R_DS(on) cuts I²R loss by >35% vs. comparable 3.5 mΩ devices, extending battery runtime and reducing MOSFET temperature rise by 12°C at full load.

Use Scenario: 3-phase inverter for e-bike and HVAC compressor drives operating from 48–72 V DC bus.

IC Role / Device Role / Timing Role: Upper-leg switch in 600 V-class inverter stage; synchronized with complementary low-side FETs for 120° trapezoidal commutation.

Use Value: 16 V/ns body diode dv/dt rating prevents shoot-through during high-di/dt freewheeling, enabling reliable 100 A phase current without snubbers.

Synchronous Rectifier

OR-ing Power Switch

Use Scenario: Secondary-side rectification in 48 V input, 12 V output telecom DC/DC modules delivering up to 200 A.

IC Role / Device Role / Timing Role: Active replacement of Schottky diode in forward converter secondary; driven by transformer-coupled gate signal.

Use Value: 1.2 V V_SD and 2.2 mΩ R_DS(on) reduce conduction loss by 60% vs. 0.5 V Schottky, improving full-load efficiency from 92.3% to 94.1%.

Use Scenario: Redundant 48 V power supply backplane in enterprise servers and storage arrays.

IC Role / Device Role / Timing Role: Unidirectional ideal diode in hot-swap OR-ing circuit; controlled by dedicated OR-ing controller (e.g., LM5050).

Use Value: 195 A package rating and 465 mJ avalanche energy allow sustained 150 A load current with immunity to bus transient reversals during supply switchover.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N7F7	R_DS(on) = 2.0 mΩ typ., V_DSS = 75 V, Q_g = 245 nC - lower gate charge but higher leakage (5 µA vs. 1 µA) and no published avalanche energy spec.	Lacks validated E_AS rating; unsuitable for unclamped inductive switching or fault-tolerant OR-ing where avalanche survival is mandatory.	Select when gate drive power is constrained and avalanche stress is absent; verify thermal design with 0.45 °C/W R_θJC.
IXTH180N075L2	R_DS(on) = 2.4 mΩ typ., V_DSS = 75 V, E_AS = 520 mJ - higher avalanche margin but larger TO-247 package increases layout area and parasitic inductance.	TO-247 mechanical interface requires redesign of heatsink mounting and PCB cutouts; not drop-in compatible with D2PAK footprint.	Prefer for systems requiring >500 mJ avalanche headroom and where board space permits larger package; avoid if D2PAK thermal via density is fixed.

Compared with STL220N7F7 and IXTH180N075L2, IRFS7730PBF uniquely balances ultra-low R_DS(on), industry-validated avalanche robustness, and D2PAK manufacturability-making it optimal for space-constrained, high-reliability 48–72 V power stages where both conduction efficiency and fault tolerance are non-negotiable.

Availability

IRFS7730PBF is available at Aetrix Electronics and suitable for brushed motor drives, BLDC inverters, and synchronous rectifiers requiring stable component supply across automotive aftermarket, industrial automation, and telecom infrastructure programs.

Supply support for IRFS7730PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with leadership in silicon-based power MOSFETs and IGBTs since acquiring International Rectifier in 2015.

This device belongs to the StrongIRFET™ family-designed specifically for high-current, high-ruggedness power conversion in motor drives, server PSUs, and renewable energy inverters where low R_DS(on), fast switching, and repeatable avalanche performance are essential.

FAQ

What is the maximum continuous drain current for IRFS7730PBF at 100°C case temperature?

The maximum continuous drain current at T_C = 100°C is 174 A (silicon-limited), as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to reduced channel conductivity and increased R_DS(on) at elevated temperatures, and assumes proper heatsinking to maintain case temperature at or below 100°C.

Does IRFS7730PBF require a gate resistor for stability in hard-switched half-bridge applications?

Yes-a gate resistor of 2.7 Ω is used in the datasheet's switching time test circuit (Fig 24a) to control dV/dt and prevent oscillation. For 100 kHz operation, a 2.2–3.3 Ω non-inductive resistor is recommended to balance switching speed (t_r/t_f) and gate ringing, especially when driving from a low-impedance 12 V source.

Can IRFS7730PBF be used in parallel configurations for >200 A applications?

Yes-its positive R_DS(on) temperature coefficient (normalized R_DS(on) rises with junction temperature, per Fig 6) enables inherent current sharing. Parallel operation requires matched gate drive routing, Kelvin source connections, and thermal coupling to ensure uniform T_J; typical derating is 15% per additional device beyond two.

Is the body diode suitable for continuous reverse conduction in synchronous rectification?

Yes-the body diode is fully characterized for continuous conduction up to 246 A (silicon-limited) and pulsed current up to 984 A. Its 1.2 V V_SD and 44 ns t_rr at 25°C make it viable for high-frequency synchronous rectification, though external Schottky diodes may still be preferred in ultra-low-V_out (<3.3 V) designs for lower forward drop.

IRFS7730PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®, StrongIRFET™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 75 V

Current - Continuous Drain (Id) @ 25°C:: 195A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 2.6mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 3.7V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 407 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 13660 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 375W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263AB (D2PAK)

IRFS7730PBF FAQ

1.How can I place an order for IRFS7730PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFS7730PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFS7730PBF reliable?

The price and inventory of IRFS7730PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFS7730PBF is usually 5 days.

3.What payment methods are accepted for IRFS7730PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFS7730PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFS7730PBF?

IRFS7730PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFS7730PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFS7730PBF?

For technical support, including IRFS7730PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFS7730PBF requirements.

6.How does Aetrix verify that IRFS7730PBF is sourced from the original manufacturer or authorized distributors?

All IRFS7730PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFS7730PBF meets industry standards.

7.What is the process for return or replacement of IRFS7730PBF?

All IRFS7730PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFS7730PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFS7730PBF part is unused and in its original packaging.

Return procedure for IRFS7730PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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