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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFS7734-7PPBF

Name: IRFS7734-7PPBF
Brand: Infineon Technologies
SKU: IRFS7734-7PPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFS7734-7PPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB

Datasheet:: IRFS7734-7PPBF.pdf

Description:: MOSFET N-CH 75V 197A D2PAK

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Inventory:5,057

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Product details

Overview

IRFS7734-7PPBF from Infineon Technologies (formerly International Rectifier) is a 75V, 197A N-channel enhancement-mode Power MOSFET in D2PAK-7L package, optimized for high-current synchronous rectification and half/full-bridge motor drive topologies. It delivers 2.6 mΩ typ. R_DS(on) at V_GS = 10 V, supports 600 A pulsed drain current, and features enhanced body diode dV/dt (4.8 V/ns) and dI/dt capability for robust BLDC and brushed motor control in battery-powered systems.

For engineers reviewing the IRFS7734-7PPBF datasheet, IRFS7734-7PPBF pinout, IRFS7734-7PPBF application, or IRFS7734-7PPBF equivalent, key selection criteria include its 75 V V_DS, 2.6 mΩ R_DS(on), 180 nC total gate charge, 10130 pF C_iss, and avalanche-rated 350 mJ E_AS - all critical for high-efficiency, thermally constrained power stage design.

Technical Context

This device employs a trench-gated HEXFET® structure with optimized cell pitch and deep-trench isolation to achieve ultra-low on-resistance while maintaining rugged unclamped inductive switching performance. Its fully characterized SOA includes thermal-limited avalanche energy (350 mJ single-pulse), linear derating factor (2.0 W/°C), and junction-to-case thermal resistance of 0.51 °C/W.

The integrated body diode exhibits 1.2 V forward voltage at 100 A and 46 ns reverse recovery time at 25°C, enabling efficient synchronous rectification in resonant-mode supplies and OR-ing applications. Gate threshold voltage is tightly specified (2.1–3.7 V) with low temperature coefficient (53 mV/°C), supporting stable operation across –55°C to +175°C junction range.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	75 V - Maximum blocking voltage for 48 V nominal bus systems with 50% safety margin
R_DS(on) max	3.05 mΩ at V_GS = 10 V, I_D = 100 A - Enables <1.5 W conduction loss at 100 A, critical for thermal management
I_D continuous	197 A at T_C = 25°C - Supports high-power motor phases without parallel devices
Q_g typ	180 nC - Determines gate driver power requirement and switching speed trade-off
E_AS	350 mJ (single-pulse, thermally limited) - Quantifies safe unclamped inductive energy handling
C_iss	10130 pF - Impacts gate drive loop stability and Miller-induced turn-on risk in high-dV/dt environments
V_SD	1.2 V at I_S = 100 A - Low forward drop reduces body diode conduction loss during dead-time
trr	46 ns at T_J = 25°C - Limits reverse recovery charge (73 nC) and peak recovery current (2.7 A)

Pinout & Package

IRFS7734-7PPBF uses the D2PAK-7L (TO-263-7) surface-mount package with exposed drain pad for thermal dissipation and seven terminals: three drain pins (D1–D3), one source pin (S), two gate pins (G1, G2), and one Kelvin source pin (KS). The package enables >294 W power dissipation at T_C = 25°C and requires FR-4 PCB mounting per AN-994 footprint guidelines.

Pin/Terminal	Circuit Role	Design Meaning
D1, D2, D3	Main Drain connections	Parallel low-inductance paths for 197 A continuous current; reduce package inductance in high-di/dt switching
S	Power Source terminal	Primary current return path; connects to main PCB ground plane
G1, G2	Gate inputs	Dual gate terminals minimize gate loop inductance and improve switching consistency
KS	Kelvin Source sense	Provides remote sensing for accurate gate drive referencing, eliminating source inductance effects on V_GS

Key Features

Feature	Design Value
Enhanced body diode dV/dt capability	4.8 V/ns at T_J = 175°C - Prevents false turn-on during fast voltage transients in bridge legs
Fully characterized avalanche SOA	350 mJ single-pulse E_AS - Enables reliable operation in unclamped inductive switching without external snubbers
Dual gate terminals + Kelvin source	Reduces effective gate loop inductance by >30% vs. standard D2PAK - improves switching speed control and EMI
Low C_oss eff. (TR)	935 pF - Minimizes turn-off energy loss in hard-switched topologies operating above 100 kHz
RoHS-compliant lead-free finish	Meets IPC-J-STD-020 moisture sensitivity level 3 - supports standard reflow profiles without pre-bake

Applications

Brushed DC Motor Drive

BLDC Motor Inverter Stage

Use Scenario: High-current H-bridge for cordless power tools with 36–48 V battery input and peak loads up to 200 A.

IC Role / Device Role / Timing Role: High-side and low-side switching element in dual-phase half-bridge configuration, operating at 20–50 kHz PWM frequency.

Use Value: 2.6 mΩ R_DS(on) reduces conduction loss by 40% vs. legacy 4.5 mΩ MOSFETs, extending runtime by >8% at 150 A load.

Use Scenario: Three-phase inverter for e-bike mid-drive motor, requiring 75 V blocking and 100 A phase current capability.

IC Role / Device Role / Timing Role: Low-side switch in 6-pack inverter module, leveraging Kelvin source for precise gate control during 10–20 kHz sinusoidal commutation.

Use Value: 46 ns trr and 73 nC Q_rr minimize dead-time losses and prevent shoot-through during high-di/dt commutation events.

Synchronous Rectifier

OR-ing Power Supply

Use Scenario: Secondary-side switch in 75 V output LLC resonant converter for telecom rectifiers, replacing Schottky diodes.

IC Role / Device Role / Timing Role: Synchronous rectifier controlled by adaptive gate timing circuit, conducting during positive V_DS half-cycle.

Use Value: 1.2 V V_SD and 197 A I_S rating enable >98.2% efficiency at full load, reducing heat sink size by 35%.

Use Scenario: Redundant 48 V DC power distribution in industrial PLC backplanes with hot-swap capability.

IC Role / Device Role / Timing Role: OR-ing FET in ideal diode controller circuit, operating in linear region during current sharing and saturation during fault isolation.

Use Value: 0.51 °C/W R_θJC and 294 W P_D allow sustained 150 A current sharing with <15°C junction rise under forced air cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N7F3AG	75 V, 220 A, 2.2 mΩ R_DS(on), TO-220FP-7 package, no Kelvin source	Lacks Kelvin source and dual gate; higher package inductance limits >100 kHz switching	Preferred for cost-sensitive, lower-frequency (<50 kHz) designs where layout simplicity outweighs switching loss optimization
IXFH75N75X3	75 V, 75 A, 4.2 mΩ R_DS(on), TO-247-3L, no Kelvin source	Lower current rating and higher R_DS(on); not suitable for 197 A continuous operation	Applicable only in paralleled configurations or lower-power variants requiring proven ruggedness over raw current density

Compared with STL220N7F3AG and IXFH75N75X3, IRFS7734-7PPBF uniquely combines 197 A current capacity, Kelvin-source precision, and 7-pin low-inductance layout - making it the only option capable of single-device 100+ A phase current handling in compact, high-frequency motor drives without paralleling.

Availability

IRFS7734-7PPBF is available at Aetrix Electronics and suitable for brushed motor drives, BLDC inverters, and synchronous rectifier circuits requiring stable component supply, long-term lifecycle support, and traceable RoHS-compliant sourcing.

Supply support for IRFS7734-7PPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with core expertise in silicon and wide-bandgap power devices.

This device belongs to the StrongIRFET™ family, engineered specifically for high-current, high-ruggedness power conversion in motor drives and industrial power supplies - emphasizing avalanche reliability, low R_DS(on), and thermally optimized packaging.

FAQ

What is the maximum allowable gate-to-source voltage for IRFS7734-7PPBF?

The absolute maximum V_GS is ±20 V, with recommended operating range of –10 V to +15 V. Exceeding ±20 V risks permanent gate oxide damage. Gate drive circuits must include clamping (e.g., Zener diodes) to prevent overshoot during fast switching, especially given its 2.0 Ω typical gate resistance and 180 nC Q_g.

Does IRFS7734-7PPBF require a heatsink when operating at 197 A continuous current?

Yes - at 197 A and 25°C case temperature, conduction loss exceeds 50 W (based on 2.6 mΩ R_DS(on)). Without active cooling, junction temperature would exceed 175°C within seconds. A heatsink with ≤0.5 °C/W thermal resistance and forced airflow is required to maintain T_J < 150°C under sustained load.

How does the Kelvin source (KS) pin function in practical PCB layout?

The KS pin provides a dedicated low-inductance return path for gate driver ground, decoupling gate control from high di/dt source current transients. It must be routed separately from the main source (S) pad and connected directly to the gate driver IC's ground reference - not to the power ground plane - to eliminate source inductance-induced V_GS droop during turn-on.

Can IRFS7734-7PPBF replace IRFS7534 in existing designs?

Yes, with verification: both share D2PAK-7L package, 75 V rating, and Kelvin source, but IRFS7734-7PPBF offers 2.6 mΩ vs. 3.2 mΩ R_DS(on) and higher 197 A vs. 180 A current rating. Layout compatibility is confirmed, though gate drive energy increases slightly (180 nC vs. 165 nC), requiring review of driver peak current capability.

IRFS7734-7PPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®, StrongIRFET™

Package/Case:: TO-263-7, D2PAK (6 Leads + Tab), TO-263CB

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 75 V

Current - Continuous Drain (Id) @ 25°C:: 197A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 3.05mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 3.7V @ 150µA

Gate Charge (Qg) (Max) @ Vgs:: 270 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 10130 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 294W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263AB (D2PAK)

IRFS7734-7PPBF FAQ

1.How can I place an order for IRFS7734-7PPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFS7734-7PPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFS7734-7PPBF reliable?

The price and inventory of IRFS7734-7PPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFS7734-7PPBF is usually 5 days.

3.What payment methods are accepted for IRFS7734-7PPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFS7734-7PPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFS7734-7PPBF?

IRFS7734-7PPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFS7734-7PPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFS7734-7PPBF?

For technical support, including IRFS7734-7PPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFS7734-7PPBF requirements.

6.How does Aetrix verify that IRFS7734-7PPBF is sourced from the original manufacturer or authorized distributors?

All IRFS7734-7PPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFS7734-7PPBF meets industry standards.

7.What is the process for return or replacement of IRFS7734-7PPBF?

All IRFS7734-7PPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFS7734-7PPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFS7734-7PPBF part is unused and in its original packaging.

Return procedure for IRFS7734-7PPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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