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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFS7787PBF

Name: IRFS7787PBF
Brand: Infineon Technologies
SKU: IRFS7787PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFS7787PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRFS7787PBF.pdf

Description:: MOSFET N-CH 75V 76A D2PAK

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Product details

Overview

IRFS7787PBF from Infineon Technologies is a 75 V, 76 A (T_C = 25°C), D2PAK-packaged N-channel enhancement-mode Power MOSFET with 6.9 mΩ typical R_DS(on) at V_GS = 10 V and 46 A, optimized for high-efficiency synchronous rectification and half-bridge motor drive in battery-powered BLDC inverters.

For engineers reviewing the IRFS7787PBF datasheet, IRFS7787PBF pinout, IRFS7787PBF application, or IRFS7787PBF equivalent, this device supports high dI/dt body diode recovery (up to 425 A/µs), 10 V/ns peak dv/dt capability, and thermally limited single-pulse avalanche energy of 144 mJ - critical for robust operation in resonant DC/DC converters and OR-ing power switches.

Technical Context

This HEXFET® device employs planar stripe cell structure with optimized gate oxide and source metallization to deliver enhanced dynamic ruggedness. Its fully characterized SOA includes linear derating (0.83 W/°C) and junction-to-case thermal resistance of 1.2 °C/W, enabling stable 54 A continuous current at T_C = 100°C.

The MOSFET features low Q_gd/Q_g ratio (23 nC / 73 nC typ.) for fast, controllable switching, and C_oss,eff(TR) = 380 pF ensures predictable turn-off timing in hard-switched topologies. Body diode t_rr = 33 ns (T_J = 25°C) and Q_rr = 42 nC support efficient synchronous rectification without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	75 V - Withstands up to 75 V drain-source blocking voltage before avalanche conduction begins.
R_DS(on) typ.	6.9 mΩ at V_GS = 10 V, I_D = 46 A - Enables <1.5 W conduction loss at 46 A, reducing heatsink requirements in high-current DC/AC inverters.
I_D cont.	76 A at T_C = 25°C - Supports high-power brushed/BLDC motor drives without parallel devices in compact D2PAK footprint.
Q_g	73 nC typ. - Allows gate drive with standard 1–2 A peak drivers while maintaining <51 ns turn-off delay in 38 V bus applications.
E_AS	144 mJ single-pulse - Sustains unclamped inductive switching events in half-bridge configurations without failure at T_J ≤ 175°C.
t_rr	33 ns at T_J = 25°C - Minimizes reverse recovery losses during synchronous rectification in 100–500 kHz DC/DC converters.
R_θJC	1.2 °C/W - Enables direct mounting to heatsinks for >100 W dissipation with <125°C junction rise above case temperature.

Pinout & Package

IRFS7787PBF uses the D2PAK (TO-263AB) surface-mount package with exposed drain pad for thermal and electrical performance. The three-terminal configuration supports high-current PCB layout with minimal parasitic inductance.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current path collector	Internally connected to exposed copper pad - must be soldered to large PCB copper area or heatsink for thermal management and low-inductance return path.
Source (S)	Current return reference node	Provides low-impedance return for load current and gate driver ground; ties to power ground plane to minimize shoot-through risk in bridge designs.
Gate (G)	Control electrode	High-impedance input requiring <100 nA leakage; driven with 10 V for full enhancement; gate resistor selection affects dV/dt control and EMI.

Key Features

Feature	Design Value
Enhanced body diode dV/dt capability	10 V/ns at T_J = 175°C - Prevents false turn-on during high-speed commutation in half-bridge motor drives.
Fully characterized avalanche SOA	209 mJ (E_AS) with L = 1 mH, I_AS = 20 A - Validates safe operation under worst-case inductive fault conditions without derating.
Low C_oss,eff(TR)	380 pF - Reduces turn-off energy loss and improves ZVS boundary in resonant LLC converters operating above 200 kHz.
Lead-free, RoHS-compliant construction	Meets IPC-J-STD-020 moisture sensitivity level 1 - Enables standard reflow assembly without pre-bake, supporting high-volume automotive and industrial production.

Applications

Brushed Motor Drive

BLDC Inverter Stage

Use Scenario: High-torque 24–48 V DC motor control in cordless power tools and industrial actuators.

IC Role / Device Role / Timing Role: Low-side switch in H-bridge topology handling bidirectional 76 A peak currents with <100 ns dead-time tolerance.

Use Value: 6.9 mΩ R_DS(on) limits I²R loss to <40 W at 76 A, enabling compact thermal design without forced air cooling.

Use Scenario: Upper-leg switching in 3-phase BLDC inverter for e-bike controllers and HVAC compressors.

IC Role / Device Role / Timing Role: High-side synchronous rectifier with body diode t_rr = 33 ns ensuring clean commutation at 20 kHz PWM frequency.

Use Value: 42 nC Q_rr reduces reverse recovery loss by >60% vs. legacy MOSFETs, improving system efficiency by 1.2% at full load.

Synchronous Rectifier

OR-ing Power Switch

Use Scenario: Secondary-side rectification in 48 V input telecom DC/DC modules delivering 100+ A output.

IC Role / Device Role / Timing Role: Active replacement for Schottky diodes in forward/flyback converters, controlled by synchronous gate driver.

Use Value: R_DS(on) × I_OUT² conduction loss replaces 0.45 V × I_OUT diode drop - cuts rectifier loss by 55% at 50 A output.

Use Scenario: Redundant 12–24 V DC power supply combining in server backplanes and industrial PLCs.

IC Role / Device Role / Timing Role: Unidirectional power path controller with fast turn-on (11 ns t_d(on)) and reverse-blocking capability.

Use Value: 75 V V_DSS margin allows safe operation across 24 V nominal systems with 30% transient overvoltage per IEC 61000-4-5.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N7F7	R_DS(on) = 5.2 mΩ (typ.), 80 A rating, but higher Q_g = 105 nC and no published avalanche energy spec.	Better conduction loss at low V_GS, but slower switching and unverified avalanche ruggedness for unclamped inductive loads.	Select when thermal budget dominates and gate drive strength exceeds 2 A; avoid in critical avalanche-prone topologies.
IXTP75N075	TO-220 package, R_DS(on) = 7.5 mΩ (max), lower I_D = 75 A, and 120 mJ E_AS - 17% less avalanche margin.	Through-hole mounting only; lacks D2PAK's thermal interface and surface-mount scalability for high-density PCBs.	Choose for legacy through-hole designs or prototyping where heatsink mounting flexibility outweighs thermal performance loss.

Compared with STL220N7F7 and IXTP75N075, IRFS7787PBF delivers balanced trade-offs: superior avalanche ruggedness (144 mJ), optimized Q_gd/Q_g for controllable switching, and D2PAK thermal interface - making it preferred for production-grade BLDC inverters and redundant OR-ing where reliability and manufacturability are co-prioritized.

Availability

IRFS7787PBF is available at Aetrix Electronics and suitable for brushed motor drives, BLDC inverter stages, synchronous rectifiers, and OR-ing power switches requiring stable component supply across industrial, automotive, and telecom power systems.

Supply support for IRFS7787PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This device belongs to the StrongIRFET™ HEXFET® family, engineered specifically for high-reliability power conversion in motor drives and DC/DC systems where dynamic ruggedness, low R_DS(on), and repeatable avalanche performance are mandatory.

FAQ

What is the maximum gate-source voltage rating for IRFS7787PBF?

The absolute maximum V_GS rating is ±20 V. Operation beyond ±20 V risks irreversible gate oxide damage. For reliable enhancement, apply 10 V - which achieves full R_DS(on) specification - and use gate clamping (e.g., 15 V Zener) if driving from higher-voltage logic or noisy environments.

Can IRFS7787PBF be used in parallel configurations?

Yes, its positive R_DS(on) temperature coefficient (0.06 V/°C) enables inherent current sharing. For stable parallel operation, match gate drive impedance (<2 Ω), ensure symmetrical PCB layout, and maintain <5°C inter-device case temperature difference. Derate total current by 15% versus sum of individual ratings.

Does IRFS7787PBF require a gate resistor, and what value is recommended?

A gate resistor is mandatory to control dV/dt and prevent oscillation. For 38 V bus switching at 100 kHz, a 4.7 Ω resistor provides optimal trade-off: limits peak gate current to ~2.1 A while keeping t_d(off) at 51 ns and minimizing EMI. Lower values increase switching speed but raise ringing risk; higher values reduce losses but extend switching time.

Is the body diode suitable for continuous freewheeling in hard-switched converters?

Yes - its 76 A continuous source current rating (I_S) and 280 A pulsed capability (I_SM) support sustained freewheeling. However, due to V_SD = 1.2 V at 46 A, conduction loss exceeds MOSFET channel loss above ~20 A; thus, synchronous rectification is strongly advised for >15 A loads to maximize efficiency.

IRFS7787PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 75 V

Current - Continuous Drain (Id) @ 25°C:: 76A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 8.4mOhm @ 46A, 10V

Vgs(th) (Max) @ Id:: 3.7V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 109 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4020 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263AB (D2PAK)

IRFS7787PBF FAQ

1.How can I place an order for IRFS7787PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFS7787PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFS7787PBF reliable?

The price and inventory of IRFS7787PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFS7787PBF is usually 5 days.

3.What payment methods are accepted for IRFS7787PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFS7787PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFS7787PBF?

IRFS7787PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFS7787PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFS7787PBF?

For technical support, including IRFS7787PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFS7787PBF requirements.

6.How does Aetrix verify that IRFS7787PBF is sourced from the original manufacturer or authorized distributors?

All IRFS7787PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFS7787PBF meets industry standards.

7.What is the process for return or replacement of IRFS7787PBF?

All IRFS7787PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFS7787PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFS7787PBF part is unused and in its original packaging.

Return procedure for IRFS7787PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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