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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFSL23N15D

Name: IRFSL23N15D
Brand: Infineon Technologies
SKU: IRFSL23N15D
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFSL23N15D

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IRFSL23N15D.pdf

Description:: MOSFET N-CH 150V 23A TO262

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFSL23N15D from Infineon Technologies (formerly International Rectifier) is a 150V, 23A N-channel enhancement-mode HEXFET® Power MOSFET in TO-220AB package, optimized for high-frequency DC-DC converters. It delivers R_DS(on) = 0.090 Ω at V_GS = 10 V, features low Q_gd = 19 nC and C_oss(eff) = 210 pF, and supports active-clamp forward and telecom 48V input topologies.

For engineers reviewing the IRFSL23N15D datasheet, IRFSL23N15D pinout, IRFSL23N15D application, or IRFSL23N15D equivalent, key selection criteria include avalanche energy rating (E_AS = 260 mJ), diode recovery dv/dt capability (4.1 V/ns), gate charge profile (Q_g = 37 nC typ.), and thermal resistance (R_θJC = 1.1 °C/W).

Technical Context

This MOSFET employs planar silicon process with optimized cell pitch and trench-assisted charge balance to achieve low conduction loss while maintaining robust switching performance. Its fully characterized C_oss across 1–120 V and effective C_oss = 210 pF enable accurate snubberless soft-switching design in active-clamp and resonant topologies.

The device integrates a fast-recovery body diode with t_rr = 150 ns (typ.) and Q_rr = 0.8 µC (typ.) at dI/dt = 100 A/µs, supporting synchronous rectification and bidirectional power flow in isolated DC-DC stages without external diode supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	150 V - Withstands full 48V telecom bus transients plus 200% margin in active-clamp reset circuits.
R_DS(on) max	0.090 Ω @ V_GS = 10 V - Enables ≤2.1 W conduction loss at 14 A DC, critical for >95% efficiency in 100–500 kHz SMPS.
Q_g typ.	37 nC - Determines gate drive power requirement; compatible with standard 1–2 A peak gate drivers (e.g., IR2110, UCC27531).
C_oss(eff)	210 pF - Represents energy stored in output capacitance during zero-voltage switching transitions; directly impacts dead-time optimization.
E_AS	260 mJ - Supports unclamped inductive switching events up to 14 A without failure, enabling robust overcurrent protection in flyback/forward designs.
t_rr	150 ns - Limits reverse recovery overshoot and EMI generation during hard-commutated freewheeling in half-bridge configurations.
R_θJC	1.1 °C/W - Allows 136 W power dissipation at T_C = 25°C; requires heatsink interface resistance ≤0.5 °C/W for 100°C junction operation.

Pinout & Package

IRFSL23N15D uses the industry-standard TO-220AB package with isolated tab (drain-connected), rated for 300°C soldering (10 s, 1.6 mm from case) and 10 lbf·in mounting torque (1.1 N·m).

Pin/Terminal	Circuit Role	Design Meaning
1 – Gate	Control electrode	Receives 10 V logic-level drive; threshold voltage 3.0–5.5 V ensures compatibility with 5 V and 3.3 V controllers.
2 – Drain	Main current path anode	Internally connected to metal tab; electrically isolated from mounting surface per JEDEC TO-220AB spec.
3 – Source	Main current path cathode / reference node	Serves as power ground return; low-inductance layout essential to minimize shoot-through risk in bridge configurations.
4 – Drain (Tab)	Secondary drain connection	Provides low-impedance thermal and electrical path to heatsink; must be insulated if heatsink is grounded.

Key Features

Feature	Design Value
Low Q_gd/Q_g ratio	19/37 ≈ 0.51 - Reduces Miller-induced turn-off delay and improves controllability under high dV/dt conditions.
Fully characterized C_oss vs. V_DS	C_oss = 120 pF @ 120 V, 1520 pF @ 1 V - Enables precise modeling of resonant tank behavior in LLC and ZVS designs.
Specified avalanche capability	I_AR = 14 A, E_AS = 260 mJ - Eliminates need for external clamping in cost-sensitive telecom power supplies.
Body diode t_rr and Q_rr	t_rr = 150 ns, Q_rr = 0.8 µC - Enables use in synchronous rectification without adding Schottky diodes in secondary-side regulation.

Applications

Telecom 48V Input DC-DC

Active Clamp Forward Converter

Use Scenario: Primary-side switch in 48 V input, 12 V/20 A telecom power supply operating at 250 kHz.

IC Role / Device Role / Timing Role: High-side main switch handling 23 A pulsed drain current and absorbing clamp energy during reset phase.

Use Value: Low C_oss(eff) and Q_gd reduce switching loss by 32% versus legacy 150 V MOSFETs, enabling >94% full-load efficiency.

Use Scenario: Main switch in active-clamp forward converter for server VRM with 12 V output and 100 A load.

IC Role / Device Role / Timing Role: Zero-voltage switched primary transistor with controlled turn-on via clamp capacitor discharge.

Use Value: Specified E_AS = 260 mJ ensures reliable clamp energy absorption without derating, simplifying magnetics design.

Industrial SMPS

Motor Drive Half-Bridge

Use Scenario: 150 V bus switch in industrial PLC power module delivering 24 V/10 A with wide ambient range (−40°C to +85°C).

IC Role / Device Role / Timing Role: Continuous conduction mode (CCM) switch with 17 A derated current at T_C = 100°C.

Use Value: R_DS(on) temperature coefficient of 0.18 V/°C ensures stable on-resistance across operating range, minimizing thermal runaway risk.

Use Scenario: Low-side switch in 48 V BLDC motor driver half-bridge controlling 15 A RMS phase current.

IC Role / Device Role / Timing Role: Fast freewheeling path using integrated body diode during PWM off-time.

Use Value: t_rr = 150 ns and low Q_rr suppress voltage spikes and reduce gate driver stress during commutation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-frequency power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFS23N15D	Same die, D²PAK package; R_θJA = 40 °C/W vs. 62 °C/W for IRFSL23N15D; no isolated tab.	Better thermal performance in PCB-mounted SMT designs; unsuitable for bolt-down heatsinking.	Select when board space permits SMT assembly and thermal interface relies on copper pour rather than mechanical heatsink.
STP20NM50FP	500 V rating, higher R_DS(on) = 0.22 Ω, lower Q_g = 25 nC; no specified E_AS or C_oss(eff).	Designed for universal-input offline SMPS; lacks telecom-grade avalanche and C_oss characterization.	Choose only for 230 VAC input applications where 150 V rating is insufficient; avoid in 48 V telecom due to excessive conduction loss.

Compared with IRFS23N15D, IRFSL23N15D offers superior mechanical mounting and isolation but higher R_θJA; versus STP20NM50FP, it provides verified 150 V system margin, lower R_DS(on), and complete dynamic parameter characterization for high-frequency DC-DC design.

Availability

IRFSL23N15D is available at Aetrix Electronics and suitable for telecom power supplies, industrial SMPS, active-clamp forward converters, and motor drive half-bridges requiring stable component supply and long-term lifecycle support.

Supply support for IRFSL23N15D includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with core expertise in silicon and wide-bandgap technologies.

The HEXFET® Power MOSFET product line was developed specifically for high-efficiency, high-frequency switching power conversion in telecom, computing, and industrial equipment, emphasizing ruggedness, low loss, and design simplicity.

FAQ

Is IRFSL23N15D suitable for 3.3 V gate drive?

No. The gate threshold voltage range is 3.0–5.5 V, and R_DS(on) is specified only at V_GS = 10 V. At 3.3 V, the device remains in weak inversion with R_DS(on) > 1 Ω-unsuitable for power switching. Use logic-level MOSFETs like IRLB8721 for 3.3 V drive.

What is the maximum continuous drain current at 100°C case temperature?

The datasheet specifies I_D @ T_C = 100°C as 17 A at V_GS = 10 V. This value accounts for R_DS(on) increase with temperature and thermal limits of the TO-220AB package; exceeding it risks thermal runaway or accelerated wear-out.

Does IRFSL23N15D have avalanche-rated operation?

Yes. It is fully characterized for single-pulse avalanche with E_AS = 260 mJ at I_AS = 14 A and T_J = 25°C. Repetitive avalanche is rated at E_AR = 13.6 mJ. These values are measured per JEDEC JESD24-11 and documented in the datasheet's Avalanche Characteristics section.

Can the body diode be used for synchronous rectification?

Yes-the body diode has t_rr = 150 ns (typ.) and Q_rr = 0.8 µC (typ.) at dI/dt = 100 A/µs, making it viable for low-duty-cycle freewheeling in medium-frequency half-bridge topologies. However, for high-efficiency synchronous rectification above 300 kHz, a dedicated Schottky or GaN FET is preferred.

IRFSL23N15D Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 23A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 90mOhm @ 14A, 10V

Vgs(th) (Max) @ Id:: 5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 56 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1200 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 136W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-262

IRFSL23N15D FAQ

1.How can I place an order for IRFSL23N15D through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFSL23N15D on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFSL23N15D reliable?

The price and inventory of IRFSL23N15D are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFSL23N15D is usually 5 days.

3.What payment methods are accepted for IRFSL23N15D?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFSL23N15D transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFSL23N15D?

IRFSL23N15D orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFSL23N15D order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFSL23N15D?

For technical support, including IRFSL23N15D datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFSL23N15D requirements.

6.How does Aetrix verify that IRFSL23N15D is sourced from the original manufacturer or authorized distributors?

All IRFSL23N15D products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFSL23N15D meets industry standards.

7.What is the process for return or replacement of IRFSL23N15D?

All IRFSL23N15D units undergo pre-shipment inspection (PSI). If there is an issue with IRFSL23N15D, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFSL23N15D part is unused and in its original packaging.

Return procedure for IRFSL23N15D:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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