Infineon Technologies IRFSL3004PBF

Overview

IRFSL3004PBF from Infineon Technologies (formerly International Rectifier) is a 40 V, 340 A (silicon-limited), 1.4 mΩ typ. N-channel HEXFET Power MOSFET in TO-220AB package, optimized for high-current synchronous rectification and hard-switched SMPS topologies requiring robust avalanche capability and fast body diode recovery.

For engineers reviewing the IRFSL3004PBF datasheet, IRFSL3004PBF pinout, IRFSL3004PBF application, or IRFSL3004PBF equivalent, key selection criteria include its 1.4 mΩ R_DS(on), 195 A package-limited continuous current, 340 mJ single-pulse avalanche energy, and 27 ns reverse recovery time - critical for high-efficiency UPS and telecom power systems.

Technical Context

This MOSFET employs planar silicon-gate technology with enhanced body diode dV/dt and dI/dt ruggedness, enabling reliable operation in unclamped inductive switching. Its gate charge profile (Q_g = 160–240 nC, Q_gd = 68 nC) supports efficient high-frequency PWM control up to several hundred kHz.

The device features thermally optimized packaging with R_θJC = 0.40 °C/W and is characterized for avalanche SOA across junction temperatures from −55°C to +175°C. C_{oss eff.(TR)} = 2690 pF and C_iss = 9200 pF reflect low-output capacitance for reduced switching losses in resonant and phase-shifted topologies.

Key Specifications

Pinout & Package

IRFSL3004PBF is housed in a TO-220AB package with isolated tab (non-conductive mounting surface), featuring three leads: Gate (G), Drain (D), and Source (S). The drain-connected tab provides low-inductance, high-current path to heatsink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel power MOSFET applications.

Compared with IRFB3004PBF and IRFS3004PBF, IRFSL3004PBF uniquely combines TO-220AB's isolated tab, 340 A silicon capability, and 0.40 °C/W thermal resistance - making it the only option among the three for high-reliability, high-current, floating-heatsink UPS and telecom rectifier designs.

Availability

IRFSL3004PBF is available at Aetrix Electronics and suitable for high-efficiency synchronous rectification, uninterruptible power supply (UPS), and hard-switched SMPS requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial and telecom infrastructure programs.

Supply support for IRFSL3004PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with core expertise in silicon and wide-bandgap power semiconductors.

The IRFSL3004PBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-current, high-ruggedness switching in mission-critical power conversion systems such as telecom rectifiers and UPS inverters.

FAQ

What is the maximum continuous drain current for IRFSL3004PBF at 100°C case temperature?

At T_C = 100°C, the continuous drain current is 240 A (silicon-limited), as specified in the Absolute Maximum Ratings table. This value reflects derating from the 340 A rating at 25°C due to thermal constraints, and assumes proper heatsinking with R_θJC = 0.40 °C/W and ambient conditions that maintain junction temperature ≤175°C.

Does IRFSL3004PBF have an integrated body diode, and what are its key recovery characteristics?

Yes, IRFSL3004PBF integrates a monolithic intrinsic p-n junction body diode. Its key recovery specs include t_rr = 27 ns (T_J = 25°C), Q_rr = 18 nC, and I_RRM = 1.2 A - measured at V_R = 34 V, I_F = 195 A, and di/dt = 100 A/µs. These values enable low-loss commutation in synchronous rectifier and freewheeling applications.

Can IRFSL3004PBF be used in parallel configurations, and what layout considerations apply?

Yes, IRFSL3004PBF supports paralleling due to its positive R_DS(on) temperature coefficient (0.037 V/°C for V_(BR)DSS). Key layout requirements include matched gate drive impedance (≤2.7 Ω per device), symmetrical source routing to minimize loop inductance, and individual Kelvin-source connections to ensure current sharing accuracy within ±5% across 3+ devices.

Is IRFSL3004PBF suitable for surface-mount assembly, and what is its moisture sensitivity level?

No - the TO-220AB package is not recommended for surface-mount application per manufacturer guidance. It is designed for through-hole mounting with screw or clamp heatsink attachment. The device is RoHS-compliant and classified as MSL Level 1 (unlimited floor life), permitting standard reflow without pre-baking.