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Infineon Technologies IRFSL3006PBF
- Part No.:
- IRFSL3006PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Datasheet:
-
IRFSL3006PBF.pdf
- Description:
- MOSFET N-CH 60V 195A TO262
- Quantity:
- Payment:
- Shipping:
Inventory:6,626
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Product details
Overview
IRFSL3006PBF from Infineon Technologies is a 60V, 2.0 mΩ (typ), 195A (package-limited) N-channel D2PAK-3L HEXFET Power MOSFET optimized for high-current, hard-switched SMPS and UPS systems. It features enhanced avalanche ruggedness (300 mJ single-pulse), low Coss eff. (TR) of 1920 pF, and fast body diode recovery (trr = 44 ns at 25°C) enabling efficient synchronous rectification.
For engineers reviewing the IRFSL3006PBF datasheet, IRFSL3006PBF pinout, IRFSL3006PBF application, or IRFSL3006PBF equivalent, key selection criteria include its 0.4°C/W RθJC thermal resistance, 200 nC typical gate charge, 170A diode conduction capability, and validated operation up to 175°C junction temperature in high-power DC-DC and motor drive stages.
Technical Context
This MOSFET employs planar silicon-gate technology with optimized cell pitch and trench-assisted source metallization to achieve simultaneous low RDS(on) and high dI/dt immunity (1360 A/µs). Its body diode is engineered for soft recovery and reduced Qrr (63 nC at 25°C), minimizing switching losses during freewheeling in buck converters and full-bridge inverters.
The device operates under unclamped inductive switching (UIS) conditions with guaranteed EAS = 300 mJ at TJ = 25°C, supported by thermally characterized SOA curves up to 100 µs pulse width. Gate drive design must account for RG(int) = 2.0 Ω and Qgd = 60 nC to control Miller-induced turn-on during high dv/dt transitions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - Maximum blocking voltage before avalanche onset; defines safe operating range in 48V bus applications. |
| RDS(on) typ. | 2.0 mΩ - Conduction loss of ~34 mW at 170A ID; enables <1% resistive loss in high-current output stages. |
| ID (Package) | 195 A - Continuous current limit set by leadframe thermal capacity; requires ≥1"² copper pad for rated performance. |
| Qg typ. | 200 nC - Total gate charge determining driver power requirement; dictates >2 W average drive power at 1 MHz switching. |
| trr | 44 ns - Body diode reverse recovery time at 25°C; sets minimum dead-time to avoid shoot-through in synchronous rectifiers. |
| EAS | 300 mJ - Single-pulse avalanche energy rating; supports robustness against inductive kickback in relay drivers and motor phase switches. |
| RθJC | 0.4 °C/W - Junction-to-case thermal resistance; enables direct heatsink mounting for 195A continuous operation without derating. |
Pinout & Package
D2PAK-3L (TO-262) package with isolated drain tab, surface-mount footprint, and 1.6 mm creepage distance. Requires FR-4 PCB with ≥1"² 2-oz copper thermal pad per AN-994 guidelines.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal (S) | Main current return path; electrically tied to exposed drain tab via internal die substrate; must be isolated from heatsink unless using insulating interface. |
| Pin 2 (Gate) | Control input (G) | High-impedance MOS gate requiring <200 nC charge; sensitive to ESD; routed away from noisy power traces. |
| Pin 3 (Drain) | Power output (D) | Internally connected to metal tab; carries full load current and dissipates conduction + switching losses; mounted directly to heatsink. |
Key Features
| Feature | Design Value |
|---|---|
| Enhanced avalanche ruggedness | 300 mJ single-pulse EAS rating verified per JEDEC JESD24-11; eliminates need for external snubbers in UPS hold-up circuits. |
| Low effective output capacitance | Coss eff. (TR) = 1920 pF - reduces turn-off energy loss in hard-switched topologies above 100 kHz. |
| Fast, soft-recovery body diode | trr = 44 ns, Qrr = 63 nC - minimizes reverse recovery spikes and EMI in synchronous buck converters. |
| High-temperature SOA | Rated for 175°C TJ operation with linear derating above 25°C; supports compact thermal design in sealed industrial enclosures. |
| Lead-free and RoHS-compliant | Meets IPC/JEDEC J-STD-020D reflow profile; qualified for 260°C peak solder temperature with 10-second dwell. |
Applications
| Server VRM Output Stage | UPS Inverter Bridge |
|---|---|
Use Scenario: High-efficiency 48V-to-12V step-down conversion delivering >200A to CPU/GPU rails in data center servers. IC Role / Device Role / Timing Role: Synchronous rectifier switch in multiphase buck converter; commutates at 500 kHz with 50 ns dead-time. Use Value: 2.0 mΩ RDS(on) reduces conduction loss by 42% vs. legacy 3.5 mΩ devices, lowering thermal load on VRM heatsinks. | Use Scenario: Bidirectional 48V DC bus switching in online double-conversion UPS systems supporting 3 kVA loads. IC Role / Device Role / Timing Role: High-side and low-side switch in full-bridge inverter; handles 195A continuous and 1080A pulsed currents. Use Value: 175°C max TJ and 300 mJ EAS enable reliable operation during grid fault transients without derating. |
| Solar Microinverter DC Link | Industrial Motor Drive Phase Leg |
Use Scenario: DC link switching in 300–600W photovoltaic microinverters interfacing string voltages up to 60V. IC Role / Device Role / Timing Role: High-frequency (100–200 kHz) half-bridge switch; conducts bidirectional current during MPPT modulation. Use Value: 44 ns trr and 63 nC Qrr suppress diode recovery oscillation, reducing EMI filter size by 30%. | Use Scenario: 3-phase IGBT gate-drive replacement in 5–10 kW servo drives powering CNC spindles and robotic joints. IC Role / Device Role / Timing Role: Low-side switch in 3-phase inverter leg; commutates 170A motor phase current with <120 ns td(off). Use Value: 0.4°C/W RθJC allows direct heatsink mounting without thermal interface pads, cutting thermal resistance by 0.25°C/W. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-current power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STL220N6F7 | RDS(on) = 1.8 mΩ (lower), Qg = 225 nC (higher), TO-220FP package | Limited to 120A continuous due to TO-220FP thermal resistance (1.2°C/W) | Prefer for lower conduction loss where gate drive capability supports higher Qg and heatsinking permits lower current rating. |
| IXFH300N06T2 | RDS(on) = 2.1 mΩ (slightly higher), EAS = 240 mJ (lower), TO-247AC package | Requires larger PCB area and mechanical mounting; no D2PAK-compatible footprint | Choose when legacy TO-247 layout exists and 240 mJ EAS suffices for target inductive load energy. |
Compared with STL220N6F7 and IXFH300N06T2, IRFSL3006PBF delivers optimal balance of ultra-low RDS(on), industry-leading EAS, and D2PAK-3L manufacturability-enabling 195A continuous operation in space-constrained server and UPS designs without sacrificing ruggedness.
Availability
IRFSL3006PBF is available at Aetrix Electronics and suitable for high-efficiency synchronous rectification in SMPS, uninterruptible power supply (UPS) inverters, and high-speed power switching in hard-switched and high-frequency circuits requiring stable component supply and long-term lifecycle support.
Supply support for IRFSL3006PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.
This device belongs to Infineon's HEXFET Power MOSFET product line, engineered specifically for high-current, high-ruggedness switching in mission-critical power conversion systems where reliability under transient stress is non-negotiable.
FAQ
What is the maximum continuous drain current for IRFSL3006PBF at 100°C case temperature?
The maximum continuous drain current at TC = 100°C is 191 A, limited by silicon thermal saturation rather than package constraints. This value assumes proper heatsinking maintaining TC ≤ 100°C and accounts for RDS(on) increase with temperature per Fig. 4 (normalized to 2.5× at 175°C). Operation above this current requires active cooling verification.
Can IRFSL3006PBF replace IRFS3006PBF in existing designs?
Yes-IRFSL3006PBF is the D2PAK-3L (TO-262) variant of the same silicon die used in the TO-220 IRFS3006PBF. Both share identical electrical specifications including RDS(on), Qg, and EAS. The only differences are package outline, thermal resistance (0.4°C/W vs. 1.0°C/W), and mounting method; PCB layout must accommodate D2PAK footprint and thermal pad.
What is the recommended gate resistor value for hard-switched 100 kHz operation?
A 5.1 Ω series gate resistor is recommended to limit peak gate current to <4 A while achieving td(on) ≈ 20 ns and td(off) ≈ 130 ns. This value balances switching speed against ringing caused by Qgd interaction and ensures stable operation with standard 12 V gate drivers. Lower values risk overshoot; higher values increase switching losses beyond 0.8 W at 100 kHz.
Does IRFSL3006PBF support paralleling for higher current applications?
Yes-its positive RDS(on) temperature coefficient (0.07 V/°C) enables inherent current sharing when paralleled. Designers must match gate drive loop inductance (<5 nH) and use Kelvin-source connections to prevent oscillation. Thermal coupling between devices must be minimized; measured imbalance remains <8% at 170A per device with matched heatsinking.
IRFSL3006PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 195A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 2.5mOhm @ 170A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 300 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 8970 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 375W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-262
IRFSL3006PBF FAQ
1.How can I place an order for IRFSL3006PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFSL3006PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFSL3006PBF reliable?
The price and inventory of IRFSL3006PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFSL3006PBF is usually 5 days.
3.What payment methods are accepted for IRFSL3006PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFSL3006PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFSL3006PBF?
IRFSL3006PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFSL3006PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFSL3006PBF?
For technical support, including IRFSL3006PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFSL3006PBF requirements.
6.How does Aetrix verify that IRFSL3006PBF is sourced from the original manufacturer or authorized distributors?
All IRFSL3006PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFSL3006PBF meets industry standards.
7.What is the process for return or replacement of IRFSL3006PBF?
All IRFSL3006PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFSL3006PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFSL3006PBF part is unused and in its original packaging.
Return procedure for IRFSL3006PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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