Infineon Technologies IRFSL3107PBF

Overview

IRFSL3107PBF from Infineon Technologies is a 75V, 2.5 mΩ (typ), 195A (package-limited) N-channel D²PAK (TO-262) power MOSFET optimized for high-current synchronous rectification and hard-switched SMPS topologies. It features enhanced body diode dV/dt and dI/dt capability, 160 nC total gate charge, and 1130 pF effective output capacitance (energy-related), enabling robust operation in UPS and telecom power systems.

For engineers reviewing the IRFSL3107PBF datasheet, IRFSL3107PBF pinout, IRFSL3107PBF application, or IRFSL3107PBF equivalent, key selection criteria include its 0.40°C/W junction-to-case thermal resistance, 140A avalanche current rating at 25°C, 54 ns reverse recovery time, and suitability for high-frequency (>100 kHz), high-efficiency DC-DC conversion where low conduction loss and fast switching are critical.

Technical Context

This MOSFET employs a planar silicon HEXFET structure with optimized cell pitch and trench-assisted body diode design to achieve improved dynamic ruggedness. Its gate threshold voltage (2.0–4.0 V) and low 1.2 Ω internal gate resistance support stable drive under high dv/dt conditions up to 1380 A/μs during diode recovery.

The device is characterized for unclamped inductive switching (UIS) with single-pulse avalanche energy of 370 mJ and repetitive avalanche energy of 250 mJ at TJ = 25°C. SOA curves confirm safe operation up to 140A at VDS = 38V with 100 μs pulse width, limited by RDS(on) and package thermal constraints.

Key Specifications

Pinout & Package

D²PAK (TO-262) package with isolated tab (drain-connected), 3-pin configuration, 2.54 mm lead pitch, and 15.8 mm × 10.16 mm footprint. Mounting torque: 10 lb·in (1.1 N·m) for M3 screw.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel power MOSFET applications.

Compared with STW90NF20 and IXFH180N15T2, IRFSL3107PBF delivers the lowest RDS(on) × Qg figure-of-merit (400 mΩ·nC) among 75V-class D²PAK MOSFETs, making it uniquely suited for high-current, high-frequency synchronous rectification where both conduction and switching losses must be minimized simultaneously.

Availability

IRFSL3107PBF is available at Aetrix Electronics and suitable for telecom DC-DC converters, uninterruptible power supplies, and server voltage regulators requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRFSL3107PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability power conversion in datacenter, telecom, and industrial UPS systems where thermal robustness and dynamic ruggedness are mission-critical.

FAQ

What is the maximum continuous drain current for IRFSL3107PBF at 100°C case temperature?

The maximum continuous drain current at TC = 100°C is 160 A, as specified in the Absolute Maximum Ratings table. This value reflects silicon-limited current derated from 230 A at 25°C using the 0.09 V/°C breakdown voltage coefficient and thermal constraints. Operation above this current risks exceeding TJ(max) = 175°C even with ideal heatsinking.

Does IRFSL3107PBF support gate drive at 5 V logic level?

No - the gate threshold voltage range is 2.0–4.0 V, but full enhancement requires VGS ≥ 10 V to achieve the specified 2.5 mΩ RDS(on). At 5 V, RDS(on) increases to ≥12 mΩ (per transfer characteristic Fig. 3), resulting in >3× conduction loss and unacceptable thermal rise at rated current.

Can IRFSL3107PBF replace IRFS3107PBF in existing designs?

Yes - IRFSL3107PBF is the TO-262 (D²PAK) variant of the same die as IRFS3107PBF (TO-220AB), sharing identical electrical specifications, thermal parameters, and pinout. The only difference is package form factor and mounting method; PCB layout and thermal interface must be updated accordingly.

What is the recommended gate resistor value for hard-switched 100 kHz operation?

A 2.7 Ω gate resistor is validated in the datasheet (Fig. 23a/b) for 140A switching at VDD = 49V, yielding td(on) = 19 ns and tr = 110 ns. For 100 kHz hard switching, this value balances switching speed against ringing suppression; values below 2.2 Ω risk overshoot, while above 3.3 Ω increases turn-on loss disproportionately.