Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFSL31N20D

Name: IRFSL31N20D
Brand: Infineon Technologies
SKU: IRFSL31N20D
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRFSL31N20D

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IRFSL31N20D.pdf

Description:: MOSFET N-CH 200V 31A TO262

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:2,123

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRFSL31N20D from Infineon Technologies is a 200 V, 31 A N-channel enhancement-mode power MOSFET in TO-220AB package, optimized for high-frequency DC-DC converters with low gate-to-drain charge (Qgd = 33–49 nC) and R_DS(on) = 0.082 Ω at V_GS = 10 V. It delivers 124 A pulsed drain current and supports telecom 48 V input forward converter topologies.

For engineers reviewing the IRFSL31N20D datasheet, IRFSL31N20D pinout, IRFSL31N20D application, or IRFSL31N20D equivalent, key selection criteria include avalanche energy rating (E_AS = 420 mJ), diode reverse recovery time (t_rr = 200–300 ns), thermal resistance (R_θJC = 0.75 °C/W), and gate charge profile for hard-switched SMPS design.

Technical Context

This MOSFET employs HEXFET® silicon technology with fully characterized output capacitance (C_oss = 390 pF at V_DS = 25 V; C_oss,eff = 170 pF over 0–160 V), enabling accurate soft-switching loss estimation. Its transconductance (g_fs = 17 S) and threshold voltage (V_GS(th) = 3.0–5.5 V) support stable gate drive across temperature.

The device integrates a robust body diode with V_SD = 1.3 V at I_S = 18 A and dV/dt immunity up to 2.1 V/ns, making it suitable for unclamped inductive switching where diode recovery behavior directly impacts system reliability and EMI.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	200 V - Withstands 200 V drain-source blocking voltage before avalanche conduction begins.
R_DS(on)	0.082 Ω - On-resistance at V_GS = 10 V and I_D = 18 A; determines conduction loss in continuous operation.
Q_gd	33–49 nC - Miller charge governing turn-off delay and dv/dt-induced false triggering risk.
t_rr	200–300 ns - Body diode reverse recovery time affecting cross-conduction loss and snubber sizing.
E_AS	420 mJ - Single-pulse avalanche energy rating; defines safe operating area under inductive fault conditions.
R_θJC	0.75 °C/W - Junction-to-case thermal resistance; enables direct heatsink interface thermal modeling.
I_D @ T_C = 100°C	21 A - Continuous drain current derated for case temperature; sets practical current limit in thermally constrained layouts.

Pinout & Package

IRFSL31N20D uses the standard TO-220AB package with isolated tab (drain-connected), 3-pin through-hole mounting, and mechanical dimensions compliant with JEDEC outline TO-220AB. Mounting torque: 10 lbf·in (1.1 N·m); soldering temperature: 300 °C for 10 s at 1.6 mm from case.

Pin/Terminal	Circuit Role	Design Meaning
1 - Gate	Control electrode	Receives 10 V logic-level gate drive; requires <110 nC total charge for full enhancement.
2 - Drain	High-side power terminal	Internally connected to metal tab; must be electrically isolated from heatsink unless referenced to same potential.
3 - Source	Power return / reference node	Serves as common return path for load current and gate drive reference; critical for low-inductance layout.

Key Features

Feature	Design Value
Low Q_gd/Q_g ratio	~47% typical - Reduces Miller-induced turn-off delay and improves controllability in high-dv/dt environments.
Fully characterized C_oss,eff	170 pF over 0–160 V - Enables precise calculation of resonant tank energy and zero-voltage switching feasibility.
Avalanche-rated structure	E_AS = 420 mJ - Guarantees ruggedness against inductive switching faults without external clamping.
Optimized body diode	t_rr = 200–300 ns, Q_rr = 1.7–2.6 µC - Minimizes recovery-related losses and EMI in synchronous rectifier and freewheeling applications.

Applications

Telecom Forward Converters

Server VRMs

Use Scenario: 48 V input, 12 V/30 A output telecom forward converter operating at 250 kHz.

IC Role / Device Role / Timing Role: Primary-side switching transistor handling high-frequency PWM with low conduction and switching loss.

Use Value: R_DS(on) = 0.082 Ω and Q_gd = 33 nC reduce both I²R loss and gate drive power, improving efficiency above 92%.

Use Scenario: Multiphase buck converter in AI accelerator server supplying 0.8 V @ 600 A to GPU cores.

IC Role / Device Role / Timing Role: High-current, low-V_DS synchronous rectifier in secondary-side topology.

Use Value: Low R_DS(on) and fast t_rr minimize conduction loss and dead-time penalty, supporting >95% phase efficiency at 1 MHz.

Industrial Motor Drives

Renewable Energy Inverters

Use Scenario: 400 V DC bus inverter driving 3 kW PMSM via six-pack TO-220-based half-bridge modules.

IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in low-cost, medium-power motor control.

Use Value: Avalanche rating (E_AS = 420 mJ) withstands inductive kickback during short-circuit events without desaturation protection.

Use Scenario: String-level DC-DC optimizer in photovoltaic systems with 1000 V max input and 400 V output.

IC Role / Device Role / Timing Role: High-voltage, high-reliability switch in non-isolated boost stage.

Use Value: V_DSS = 200 V with 150 °C T_J rating ensures margin for 1000 V string transients per UL 1703 surge requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP30NF20	R_DS(on) = 0.085 Ω, Q_gd = 42 nC, E_AS = 380 mJ	Lower avalanche energy and slightly higher on-resistance; identical TO-220AB footprint	Acceptable for non-fault-tolerant designs where cost sensitivity outweighs ruggedness needs.
IXTH30N20L	R_DS(on) = 0.075 Ω, Q_gd = 28 nC, no specified E_AS	Superior switching performance but uncharacterized avalanche capability; TO-247 package	Preferred for high-efficiency, high-frequency SMPS where thermal headroom allows TO-247 heatsinking.

Compared with STP30NF20 and IXTH30N20L, IRFSL31N20D offers the highest single-pulse avalanche energy (420 mJ) and best balance of R_DS(on), Q_gd, and package compatibility for cost-sensitive industrial and telecom power supplies requiring field reliability.

Availability

IRFSL31N20D is available at Aetrix Electronics and suitable for telecom forward converters, server VRMs, and industrial motor drives requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRFSL31N20D includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching power supplies operating above 100 kHz with demanding thermal and ruggedness requirements.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFSL31N20D supports 21 A continuous drain current at T_C = 100°C with V_GS = 10 V, reflecting linear derating from 31 A at 25°C using the 1.3 W/°C factor. This value assumes adequate heatsinking and is validated per Infineon's SOA curves in Figure 8 of the datasheet.

Is the TO-220AB package electrically isolated?

No - the metal tab of the IRFSL31N20D TO-220AB package is internally connected to the drain terminal. Electrical isolation from the heatsink requires a mica or polymer insulator plus shoulder washer, and thermal compound must remain dielectric to prevent shorting.

Does this MOSFET have a specified gate threshold voltage range?

Yes - V_GS(th) is specified as 3.0–5.5 V at I_D = 250 µA and V_DS = V_GS. This range ensures reliable turn-on with standard 5 V or 10 V gate drivers while avoiding unintended conduction due to noise near the lower threshold boundary.

Can IRFSL31N20D be used in synchronous rectification?

Yes - its body diode has characterized t_rr (200–300 ns) and Q_rr (1.7–2.6 µC), and R_DS(on) remains low when actively driven. However, external gate control timing must account for diode recovery to avoid shoot-through; dedicated synchronous rectifier controllers are recommended.

IRFSL31N20D Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 31A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 82mOhm @ 18A, 10V

Vgs(th) (Max) @ Id:: 5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 110 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2370 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta), 200W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-262

IRFSL31N20D FAQ

1.How can I place an order for IRFSL31N20D through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFSL31N20D on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFSL31N20D reliable?

The price and inventory of IRFSL31N20D are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFSL31N20D is usually 5 days.

3.What payment methods are accepted for IRFSL31N20D?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFSL31N20D transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFSL31N20D?

IRFSL31N20D orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFSL31N20D order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFSL31N20D?

For technical support, including IRFSL31N20D datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFSL31N20D requirements.

6.How does Aetrix verify that IRFSL31N20D is sourced from the original manufacturer or authorized distributors?

All IRFSL31N20D products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFSL31N20D meets industry standards.

7.What is the process for return or replacement of IRFSL31N20D?

All IRFSL31N20D units undergo pre-shipment inspection (PSI). If there is an issue with IRFSL31N20D, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFSL31N20D part is unused and in its original packaging.

Return procedure for IRFSL31N20D:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…