Infineon Technologies IRFSL3207

Overview

IRFSL3207 from Infineon (formerly International Rectifier) is a 75V, 170A N-channel D2Pak-7L HEXFET® Power MOSFET optimized for high-frequency hard-switched and synchronous rectification applications. It features 3.6 mΩ typ. R_DS(on), 180 nC total gate charge, enhanced body diode dV/dt and dI/dt capability, and thermally robust avalanche rating up to 300 mJ (single-pulse). Used in UPS output stages and high-efficiency SMPS secondary-side switches.

For engineers reviewing the IRFSL3207 datasheet, IRFSL3207 pinout, IRFSL3207 application, or IRFSL3207 equivalent, key selection criteria include its 75V V_DSS, 170A continuous drain current at T_C = 25°C, 0.50 °C/W junction-to-case thermal resistance, 42 ns typ. reverse recovery time, and D2Pak-7L package with isolated tab - critical for high-power, high-reliability power conversion designs.

Technical Context

This MOSFET employs planar stripe silicon technology with optimized cell pitch and trench-assisted edge termination to achieve improved dynamic ruggedness and fully characterized SOA across temperature. Its low C_{oss eff.(TR)} (1010 pF) and C_rss (390 pF) support efficient operation above 100 kHz in ZVS and hard-switched topologies.

The integrated body diode exhibits 1.3 V typ. forward voltage at 75 A and 42–63 ns reverse recovery time (T_J = 25–125°C), enabling reliable synchronous rectification without external Schottky replacement in 48V-output server PSUs and telecom rectifiers.

Key Specifications

Pinout & Package

D2Pak-7L (TO-263-7L) package with isolated drain tab; 7-pin surface-mount outline featuring 3× source pins, 1× gate, 1× Kelvin source, and 2× drain connections (including tab) for minimized source inductance and precise gate control.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, 75V power switching applications.

Compared with STW75NF75 and IXFH75N30P3, IRFSL3207 provides 2.4× lower R_DS(on) than STW75NF75 and 3.5× lower than IXFH75N30P3 at 75 V, enabling higher power density and reduced thermal overhead in 48–60 V high-current applications - without sacrificing avalanche ruggedness or diode recovery performance.

Availability

IRFSL3207 is available at Aetrix Electronics and suitable for server power supply design, uninterruptible power systems, and industrial motor drive development requiring stable component supply and long-term production continuity.

Supply support for IRFSL3207 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with core expertise in silicon and wide-bandgap power devices.

The IRFSL3207 belongs to the HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability power conversion in datacenter, telecom, and industrial UPS applications demanding low R_DS(on), fast switching, and robust avalanche behavior.

FAQ

What is the maximum continuous drain current for IRFSL3207 at 100°C case temperature?

The IRFSL3207 supports 120 A continuous drain current at T_C = 100°C with V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating based on R_θJC = 0.50 °C/W and T_J(max) = 175°C. At higher ambient or insufficient heatsinking, current must be further reduced per the SOA curve in Figure 9.

Does IRFSL3207 have a Kelvin source pin, and how is it used in layout?

Yes, Pin 4 is the Kelvin source (KS) terminal. It must be routed separately from main source pins (S1–S3) directly to the gate driver's source reference to eliminate voltage drop errors in V_GS sensing. This ensures accurate gate drive timing and prevents shoot-through in half-bridge configurations, especially critical at >100 kHz switching frequencies.

Can IRFSL3207 replace IRFS3207 or IRFB3207 in existing designs?

IRFSL3207 is the D2Pak-7L variant and is not pin-compatible with the TO-220AB (IRFS3207) or TO-262 (IRFB3207) packages. While electrical specs are closely matched, mechanical layout, thermal interface, and gate loop routing differ significantly. Direct replacement requires PCB redesign to accommodate the surface-mount D2Pak-7L footprint and isolated tab mounting.

What is the recommended gate resistor value for hard-switched 200 kHz operation?

A 2.6 Ω gate resistor is validated in the datasheet for 200 kHz hard-switched operation with V_DD = 48 V and I_D = 75 A (Figure 23). This value balances switching speed (t_r = 120 ns, t_f = 74 ns) against gate ringing and EMI. For higher current or lower EMI, increase to 4.7 Ω; for faster switching in ZVS, reduce to 1.5 Ω with active gate clamping.