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Infineon Technologies IRFSL3207ZPBF
- Part No.:
- IRFSL3207ZPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Datasheet:
-
IRFSL3207ZPBF.pdf
- Description:
- MOSFET N-CH 75V 120A TO262
- Quantity:
- Payment:
- Shipping:
Inventory:4,459
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Product details
Overview
IRFSL3207ZPBF from Infineon Technologies (formerly International Rectifier) is a 75V, 120A (package-limited), 3.3mΩ typ. N-channel enhancement-mode HEXFET® Power MOSFET in TO-262 (ISOTOP) package, optimized for high-efficiency synchronous rectification and hard-switched SMPS topologies requiring robust avalanche capability and fast body diode recovery.
For engineers reviewing the IRFSL3207ZPBF datasheet, IRFSL3207ZPBF pinout, IRFSL3207ZPBF application, or IRFSL3207ZPBF equivalent, key selection criteria include its 36ns typ. reverse recovery time (trr), 50–75nC reverse recovery charge (Qrr), 120nC total gate charge (Qg), and enhanced dV/dt ruggedness-critical for high-frequency LLC resonant converters and UPS output stages.
Technical Context
This MOSFET employs planar stripe cell technology with optimized body diode design to deliver improved unclamped inductive switching (UIS) performance (300mJ EAS) and 1730A/µs di/dt capability. Its low Crss (270pF) and Coss eff. (TR) of 960pF support clean turn-off in high dv/dt environments.
The device features a gate threshold voltage (VGS(th)) of 2.0–4.0V, internal gate resistance (RG(int)) of 0.80Ω, and is characterized for operation up to TJ = 175°C with RθJC = 0.50°C/W-enabling high-power density designs in constrained thermal envelopes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 75V - Maximum drain-source blocking voltage; sets upper limit for bus voltage in 48V-input SMPS and UPS inverters. |
| RDS(on) typ. | 3.3mΩ at VGS = 10V, TJ = 25°C - Enables <1.5W conduction loss at 75A, critical for >95% efficiency in synchronous rectifiers. |
| Qg | 120nC max - Determines gate drive power requirement; compatible with standard 1A peak gate drivers at ≤500kHz switching. |
| trr | 36ns typ. at TJ = 25°C - Minimizes body diode reverse recovery loss during commutation in phase-shifted full-bridge converters. |
| EAS | 300mJ single-pulse - Supports reliable operation under transient overloads without derating in uninterruptible power supplies. |
| di/dt rating | 1730A/µs - Ensures stable body diode commutation in high-current, fast-edge applications like motor drives and welders. |
Pinout & Package
IRFSL3207ZPBF is housed in a TO-262 (ISOTOP) package with isolated tab, featuring three leads: Gate (G), Drain (D), and Source (S). The metal tab is electrically connected to the Drain terminal and must be insulated from heatsink unless system-level grounding permits direct connection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | Gate control input | Receives PWM signal; requires ≥10V drive for full enhancement; 0.80Ω internal RG reduces ringing risk. |
| D | Drain (high-side switch node) | Connected to power rail or inductive load; tab is Drain-connected-requires electrical isolation if heatsink is grounded. |
| S | Source (return path) | Reference node for gate drive; carries full load current (up to 120A); low-inductance PCB layout essential. |
Key Features
| Feature | Design Value |
|---|---|
| Enhanced body diode dV/dt capability | Rated for 2.0V/ns peak diode recovery dv/dt-prevents spurious turn-on in high-speed hard-switched circuits. |
| Fully characterized avalanche SOA | 300mJ single-pulse EAS with validated thermal limits-enables robust design without external snubbers in UPS hold-up stages. |
| Lead-free & RoHS-compliant | Meets IPC/JEDEC J-STD-020D reflow profile; qualified for lead-free assembly up to 260°C peak temperature. |
| Low Coss eff. (TR) | 960pF-reduces turn-off energy loss (½ × Coss × V²) in 300–500kHz ZVS/ZCS topologies. |
Applications
| High-Efficiency Synchronous Rectification | Uninterruptible Power Supply (UPS) |
|---|---|
Use Scenario: Secondary-side rectification in 48V-input telecom and server PSUs using active clamp forward or LLC resonant topology. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diodes; conducts during transformer secondary voltage polarity reversal. Use Value: Reduces conduction loss by >60% vs. 40V Schottky, enabling >96% full-load efficiency at 1.5kW output. |
Use Scenario: Inverter stage in line-interactive and double-conversion UPS systems delivering 1–3kVA output. IC Role / Device Role / Timing Role: High-current, high-reliability power switch in H-bridge inverter; handles bidirectional energy flow during battery backup. Use Value: Withstands 1730A/µs di/dt during zero-crossing transitions and delivers 300mJ avalanche energy margin against grid transients. |
| Hard-Switched DC-DC Converters | High-Frequency SMPS |
Use Scenario: Primary-side switch in 100–300kHz phase-shifted full-bridge converters for industrial power supplies. IC Role / Device Role / Timing Role: High-side main switch; subjected to high dv/dt during turn-off and body diode commutation. Use Value: 36ns trr and 50nC Qrr minimize dead-time losses and reduce EMI generation during ZVS transition. |
Use Scenario: Output stage in high-density 500kHz+ buck converters for GPU VRMs and AI accelerators. IC Role / Device Role / Timing Role: Low-RDS(on) power switch handling pulsed currents up to 170A (silicon-limited) with minimal thermal rise. Use Value: 3.3mΩ RDS(on) and 0.50°C/W RθJC allow 120A continuous current on compact heatsinks, supporting >800W/in³ power density. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-current, 75V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFB3207ZPBF (TO-220AB) | Same silicon die, but TO-220AB package with higher RθJA (62°C/W) and lower ID (package-limited 120A same, but thermal derating starts earlier). | Better suited for lower-power, cost-sensitive designs where PCB space allows vertical mounting and heatsink access is unrestricted. | Select when mechanical constraints favor through-hole mounting and thermal management uses large finned heatsinks. |
| IRFS3207ZPBF (D2Pak) | Identical electrical specs; D2Pak offers superior RθJA (40°C/W on PCB mount) but requires surface-mount assembly and larger pad area. | Preferred for high-volume automated production where board-level thermal performance outweighs manual assembly concerns. | Choose for SMT-based high-power servers or telecom equipment where PCB copper area enables efficient heat spreading. |
Compared with IRFB3207ZPBF and IRFS3207ZPBF, IRFSL3207ZPBF provides identical electrical performance in a TO-262 package that balances ease of manual assembly, moderate thermal resistance (RθJC = 0.50°C/W), and isolation-friendly tab configuration-making it optimal for mid-volume industrial UPS and test equipment.
Availability
IRFSL3207ZPBF is available at Aetrix Electronics and suitable for high-efficiency synchronous rectification, uninterruptible power supply inverters, and hard-switched DC-DC converters requiring stable component supply across extended production cycles.
Supply support for IRFSL3207ZPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon-based power devices and wide-bandgap solutions.
This part belongs to the legacy HEXFET® Power MOSFET product line, designed specifically for high-current, high-reliability switching in industrial power conversion, UPS, and telecom infrastructure-prioritizing ruggedness, low conduction loss, and fast body diode recovery.
FAQ
What is the maximum continuous drain current for IRFSL3207ZPBF at 100°C case temperature?
The maximum continuous drain current at TC = 100°C is 120A, limited by package wire bond capacity-not silicon. This value remains constant from 25°C to 100°C case temperature per the datasheet's "ID @ TC = 100°C" specification, reflecting conservative thermal design margins for long-term reliability in enclosed UPS enclosures.
Is IRFSL3207ZPBF suitable for use in synchronous rectifier circuits with 12V output?
Yes-its 75V VDSS and 3.3mΩ RDS(on) make it ideal for 12V-output synchronous rectifiers in high-current applications (e.g., server VRMs). The 36ns trr and low Qrr (50nC) minimize reverse recovery loss, while the 170A silicon-limited ID supports peak loads exceeding 150A with appropriate thermal design.
Does IRFSL3207ZPBF require a negative gate turn-off voltage?
No-its gate threshold voltage (2.0–4.0V) and positive-only gate drive compatibility mean it operates reliably with 0V/10V or 0V/12V logic-level drive. Negative turn-off is unnecessary; however, a small negative bias (e.g., −2V) may improve noise immunity in high-dv/dt environments without affecting reliability.
How does the TO-262 package compare thermally to TO-220AB for this device?
The TO-262 (IRFSL3207ZPBF) and TO-220AB (IRFB3207ZPBF) share identical RθJC = 0.50°C/W, but TO-262 offers better mechanical stability and easier heatsink mounting via screw-down tab. Unlike TO-220AB, TO-262 avoids lead bending stress in high-vibration environments-critical for industrial UPS installations.
IRFSL3207ZPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 75 V
- Current - Continuous Drain (Id) @ 25°C:
- 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 4.1mOhm @ 75A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs:
- 170 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6920 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 300W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-262
IRFSL3207ZPBF FAQ
1.How can I place an order for IRFSL3207ZPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFSL3207ZPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFSL3207ZPBF reliable?
The price and inventory of IRFSL3207ZPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFSL3207ZPBF is usually 5 days.
3.What payment methods are accepted for IRFSL3207ZPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFSL3207ZPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFSL3207ZPBF?
IRFSL3207ZPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFSL3207ZPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFSL3207ZPBF?
For technical support, including IRFSL3207ZPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFSL3207ZPBF requirements.
6.How does Aetrix verify that IRFSL3207ZPBF is sourced from the original manufacturer or authorized distributors?
All IRFSL3207ZPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFSL3207ZPBF meets industry standards.
7.What is the process for return or replacement of IRFSL3207ZPBF?
All IRFSL3207ZPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFSL3207ZPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFSL3207ZPBF part is unused and in its original packaging.
Return procedure for IRFSL3207ZPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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