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Infineon Technologies IRFSL3306PBF
- Part No.:
- IRFSL3306PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Datasheet:
-
IRFSL3306PBF.pdf
- Description:
- MOSFET N-CH 60V 120A TO262
- Quantity:
- Payment:
- Shipping:
Inventory:7,123
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Product details
Overview
IRFSL3306PBF from Infineon Technologies (formerly International Rectifier) is a 60V, 120A (package-limited), 3.3mΩ typ. N-channel D2Pak power MOSFET optimized for high-frequency hard-switching and synchronous rectification in SMPS. It features enhanced body diode dV/dt and dI/dt capability, 85nC total gate charge, and 720pF effective output capacitance (energy-related), enabling robust operation in UPS and telecom power stages.
For engineers reviewing the IRFSL3306PBF datasheet, IRFSL3306PBF pinout, IRFSL3306PBF application, or IRFSL3306PBF equivalent, key selection criteria include its 0.65°C/W junction-to-case thermal resistance, 160A silicon-limited continuous drain current at 25°C, avalanche-rated 620mJ single-pulse energy, and lead-free, halogen-free RoHS compliance for industrial-grade power conversion designs.
Technical Context
This HEXFET device employs planar vertical DMOS architecture with optimized cell pitch and trench-assisted gate structure to achieve low RDS(on) while maintaining high dV/dt immunity (>4.8V/ns typical). Its body diode exhibits 31ns reverse recovery time and 34nC Qrr at 25°C, supporting efficient synchronous rectification without external Schottky supplementation.
The MOSFET's dynamic parameters-Qgd = 26nC, Coss(ER) = 720pF, and tr/tf = 76/77ns-are characterized under VDD = 30V, ID = 75A, and RG = 2.7Ω conditions, ensuring predictable switching behavior in 100–500kHz DC-DC converters and motor drive half-bridges.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60V - Maximum blocking voltage before avalanche onset; sets upper limit for bus voltage in 48V systems. |
| RDS(on) typ. | 3.3mΩ - Conduction loss of ~30W at 100A; enables <95% efficiency in 12V→1V VRMs. |
| ID (pkg) | 120A @ TC = 25°C - Package thermal limit defines real-world current handling with standard heatsinking. |
| Qg | 85nC - Gate drive energy requirement; dictates driver IC selection (e.g., IR2110, UCC27531). |
| EAS | 620mJ - Single-pulse avalanche energy rating; supports unclamped inductive switching in PFC stages. |
| RθJC | 0.65°C/W - Thermal path resistance from junction to case; enables 120W dissipation with ≤78°C case rise. |
| Coss(ER) | 720pF - Energy-related output capacitance; determines turn-off loss in hard-switched ZVS-limited topologies. |
Pinout & Package
D2Pak (TO-263) surface-mount package with isolated tab, 3-pin configuration (Drain, Source, Gate), designed for PCB thermal relief via large copper pour under exposed drain pad.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (G) | Gate | Control terminal requiring ≥10V VGS for full enhancement; internal RG = 0.7Ω limits ESD susceptibility. |
| Pin 2 (D) | Drain | Main high-side switching node; electrically connected to exposed metal tab for thermal conduction and high-current return path. |
| Pin 3 (S) | Source | Power ground reference for gate drive; ties to source of complementary high-side switch in half-bridge configurations. |
Key Features
| Feature | Design Value |
|---|---|
| Enhanced body diode dI/dt capability | Supports 1400A/μs diode commutation without snap-off, critical for synchronous buck converter light-load transitions. |
| Characterized avalanche SOA | Validated 620mJ single-pulse energy at IAS = 96A ensures reliability in unclamped inductive turn-off events. |
| Low Coss(TR) = 880pF | Reduces turn-on delay in resonant LLC primary switches by minimizing Miller plateau duration. |
| RoHS-compliant & halogen-free | Meets IPC-J-STD-020 moisture sensitivity level 3 (MSL3), enabling standard reflow without baking. |
| Improved gate ruggedness | Withstands >20V transient gate overvoltage per JEDEC A113D, reducing need for external gate clamping. |
Applications
| Server VRM Synchronous Rectifier | Telecom 48V DC-DC Converter |
|---|---|
Use Scenario: High-current, low-voltage point-of-load regulation in AI accelerator servers requiring >100A per phase. IC Role / Device Role / Timing Role: Low-side synchronous rectifier in multiphase buck converter; operates at 300–500kHz with 100ns dead-time control. Use Value: 3.3mΩ RDS(on) reduces conduction loss by 40% vs. 5.5mΩ alternatives, lowering thermal load on 6-layer PCBs. | Use Scenario: Primary-side switch in isolated forward converter powering 12V/48V telecom shelf management systems. IC Role / Device Role / Timing Role: Hard-switched 60V main switch; handles 120A peak currents during burst-mode operation. Use Value: 620mJ EAS rating prevents failure during line surge-induced transformer saturation events. |
| Industrial UPS Inverter Stage | EV Onboard Charger PFC Switch |
Use Scenario: Bidirectional 60V battery interface in modular uninterruptible power supplies with active cooling. IC Role / Device Role / Timing Role: Half-bridge leg switch in 16kHz PWM inverter; conducts 120A continuous with forced-air heatsink. Use Value: 0.65°C/W RθJC allows 120W dissipation at ≤85°C case temperature, eliminating need for liquid cooling. | Use Scenario: Boost switch in 3.3kW OBC PFC stage operating at 65kHz with 400V DC-link. IC Role / Device Role / Timing Role: High-efficiency 60V switch in interleaved boost topology; body diode recovers at 100A/μs. Use Value: 31ns trr and 34nC Qrr minimize reverse recovery losses, improving PFC efficiency by 0.4% at full load. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFB3306PbF | TO-220AB package; identical RDS(on), Qg, and VDSS; 0.50°C/W RθCS but higher RθJA (62°C/W). | Requires mechanical mounting and wire leads; unsuitable for automated SMT lines. | Select when manual assembly, legacy footprint compatibility, or discrete heatsink attachment is required. |
| IRFS3306PbF | D2Pak variant with same die; identical electrical specs but different tape-and-reel packaging (800/reel vs. 50/tube). | No functional difference; only logistics distinction for high-volume SMT production. | Select for pick-and-place compatibility and reduced changeover downtime in mass manufacturing. |
Compared with IRFB3306PbF, IRFSL3306PBF offers superior thermal performance in PCB-mounted applications due to lower RθJA (40°C/W vs. 62°C/W), while IRFS3306PbF provides identical performance with optimized reel packaging for automated assembly-making IRFSL3306PBF the preferred choice for thermally constrained board-level designs.
Availability
IRFSL3306PBF is available at Aetrix Electronics and suitable for high-efficiency synchronous rectification in SMPS, uninterruptible power supply inverters, and hard-switched industrial DC-DC converters requiring stable component supply across multi-year production cycles.
Supply support for IRFSL3306PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor leader specializing in power management, automotive microcontrollers, and industrial sensors, with core expertise in silicon-based power devices since 1999.
This part belongs to Infineon's legacy HEXFET® power MOSFET product line, engineered for high-current, high-frequency switching in server, telecom, and industrial power supplies where conduction loss and thermal reliability are critical.
FAQ
What is the maximum continuous drain current for IRFSL3306PBF at 100°C case temperature?
The maximum continuous drain current at TC = 100°C is 110A, as specified in the Absolute Maximum Ratings table. This value reflects silicon-limited conduction capacity under thermal derating, distinct from the 120A package-limited rating at 25°C. Operation above this current requires active thermal management to prevent junction overheating beyond 175°C.
Does IRFSL3306PBF support avalanche operation in repetitive mode?
Yes-repetitive avalanche is supported with EAR = 200mJ at 1% duty cycle and TJ = 150°C, per Figure 15. Safe operation requires limiting pulse width, frequency, and ambient temperature to ensure average power dissipation stays within the thermal impedance envelope defined by ZthJC and heatsink design.
How does the body diode's reverse recovery performance compare between 25°C and 125°C?
At 125°C, trr increases to 35ns (vs. 31ns at 25°C) and Qrr rises to 45nC (vs. 34nC), per the Diode Characteristics table. This 32% Qrr increase elevates reverse recovery loss in synchronous rectifiers, necessitating gate drive optimization or snubber tuning in high-temperature environments.
Can IRFSL3306PBF be used in place of IRFS3306PbF without design changes?
Yes-IRFSL3306PBF and IRFS3306PbF share identical electrical specifications, thermal characteristics, and D2Pak mechanical dimensions. The only difference is packaging format (tube vs. tape-and-reel); no schematic, layout, or thermal design modifications are required for substitution in existing SMT production lines.
IRFSL3306PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 4.2mOhm @ 75A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs:
- 120 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4520 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 230W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-262
IRFSL3306PBF FAQ
1.How can I place an order for IRFSL3306PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFSL3306PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFSL3306PBF reliable?
The price and inventory of IRFSL3306PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFSL3306PBF is usually 5 days.
3.What payment methods are accepted for IRFSL3306PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFSL3306PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFSL3306PBF?
IRFSL3306PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFSL3306PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFSL3306PBF?
For technical support, including IRFSL3306PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFSL3306PBF requirements.
6.How does Aetrix verify that IRFSL3306PBF is sourced from the original manufacturer or authorized distributors?
All IRFSL3306PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFSL3306PBF meets industry standards.
7.What is the process for return or replacement of IRFSL3306PBF?
All IRFSL3306PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFSL3306PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFSL3306PBF part is unused and in its original packaging.
Return procedure for IRFSL3306PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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