Infineon Technologies IRFSL3307

Overview

IRFSL3307 from Infineon (formerly International Rectifier) is a 75V, 120A N-channel D2Pak-7L HEXFET® Power MOSFET optimized for high-frequency hard-switched and synchronous rectification applications. It features 5.0 mΩ typ. R_DS(on), 120 nC total gate charge, and enhanced body diode dV/dt (11 V/ns) and dI/dt ruggedness - enabling robust operation in UPS, server SMPS, and industrial DC-DC converters.

For engineers reviewing the IRFSL3307 datasheet, IRFSL3307 pinout, IRFSL3307 application, or IRFSL3307 equivalent, key selection criteria include its 75V V_BR(DSS), low 0.61°C/W R_θJC, 570 pF C_{oss eff.(ER)}, and 510 mJ single-pulse avalanche energy - critical for high-reliability power stage design under transient stress.

Technical Context

This MOSFET employs planar silicon technology with optimized cell layout to deliver stable R_DS(on) over temperature (0.069 V/°C V_BR(DSS) TC) and tightly controlled gate threshold (2.0–4.0 V). Its body diode exhibits 38–57 ns reverse recovery time (T_J = 25–125°C) and 65–98 nC Q_rr, supporting fast, low-loss commutation in synchronous buck topologies.

The device is characterized for unclamped inductive switching (UIS) up to 75A I_AS, with thermal-limited E_AS of 510 mJ at T_J = 25°C. Its SOA is defined by both R_DS(on) limitation at low V_DS and package current limit (75A) at high V_DS, validated per Fig. 8 and Fig. 9 in the datasheet.

Key Specifications

Pinout & Package

IRFSL3307 is housed in a surface-mount D2Pak-7L (TO-263-7L) package with exposed drain pad for low thermal resistance (R_θJC = 0.61°C/W). The 7-pin configuration includes three parallel source terminals, one gate, and three drain connections (including thermal pad).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 75V power MOSFET applications.

Compared with STL220N7LF8AG and IXFH70N75X3, IRFSL3307 delivers optimal balance of current capability (120 A), ruggedness (510 mJ E_AS), and thermal performance (0.61°C/W) in a surface-mount D2Pak-7L - making it uniquely suited for high-density, high-reliability SMPS where both conduction and transient stresses are simultaneously demanding.

Availability

IRFSL3307 is available at Aetrix Electronics and suitable for server VRMs, industrial UPS inverters, telecom DC-DC bricks, and EV onboard charger PFC stages requiring stable component supply across multi-year production cycles.

Supply support for IRFSL3307 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with core expertise in silicon and wide-bandgap power devices.

The IRFSL3307 belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in enterprise computing, uninterruptible power, and industrial power conversion systems.

FAQ

What is the maximum continuous drain current for IRFSL3307 at 100°C case temperature?

The datasheet specifies ID @ TC = 100°C as 84 A at VGS = 10 V. This rating reflects thermal derating due to junction-to-case thermal resistance (0.61°C/W) and ambient thermal environment - not package current limitation, which caps at 75 A regardless of temperature. Operation above 84 A at TC = 100°C violates absolute maximum ratings and risks thermal runaway.

Does IRFSL3307 support logic-level gate drive?

No - IRFSL3307 has a gate threshold voltage range of 2.0–4.0 V, but its R_DS(on) is fully specified only at VGS = 10 V (5.0 mΩ typ.). At VGS = 4.5 V, R_DS(on) rises to ~12 mΩ, increasing conduction loss by >140%. It requires a 10 V gate drive for rated performance and is not compatible with 3.3 V or 5 V logic without significant efficiency penalty.

How does the D2Pak-7L package improve thermal performance over standard D2Pak?

The D2Pak-7L adds four extra pins (three source, one drain) and an enlarged thermal pad versus standard D2Pak-3L. This reduces source inductance by ~35%, lowers R_θJC from 0.75°C/W (end-of-life) to 0.61°C/W, and distributes current across multiple bond wires - directly improving switching stability and thermal margin in high-frequency, high-current applications.

Can IRFSL3307 be used in parallel configurations?

Yes - its positive R_DS(on) temperature coefficient (R_DS(on) increases with TJ) enables inherent current sharing. However, layout symmetry (matched gate and source inductance), individual gate resistors (≥3.9 Ω), and Kelvin-source routing are mandatory to prevent oscillation and unequal current division. Parallel use beyond two devices requires detailed thermal modeling per AN-994.