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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFSL3607PBF

Name: IRFSL3607PBF
Brand: Infineon Technologies
SKU: IRFSL3607PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFSL3607PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IRFSL3607PBF.pdf

Description:: MOSFET N-CH 75V 80A TO262

Quantity:: RFQ Add To RFQ list

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Inventory:6,527

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Product details

Overview

IRFSL3607PBF from Infineon Technologies is a 75V, 80A N-channel enhancement-mode HEXFET Power MOSFET in TO-220AB package, optimized for high-efficiency synchronous rectification and hard-switched SMPS topologies. It features 7.34 mΩ typical R_DS(on), 56 nC total gate charge, and enhanced body diode dV/dt (27 V/ns) and dI/dt capability - enabling robust operation in UPS and high-frequency DC-DC converters.

For engineers reviewing the IRFSL3607PBF datasheet, IRFSL3607PBF pinout, IRFSL3607PBF application, or IRFSL3607PBF equivalent, key selection criteria include avalanche energy rating (310 mJ), SOA-limited continuous current at elevated case temperature, body diode reverse recovery performance (Q_rr = 32–48 nC), and thermal resistance (R_θJC = 1.045 °C/W).

Technical Context

This MOSFET employs planar silicon process with optimized cell pitch and trench-assisted charge balance to achieve low R_DS(on) while maintaining high dv/dt immunity and fully characterized avalanche SOA. Its gate threshold voltage (2.0–4.0 V) and low Q_gd/Q_g ratio (16/56 nC) support fast, controllable switching in both hard- and resonant-mode topologies.

The integrated body diode exhibits 1.3 V forward drop at 46 A and 33–50 ns reverse recovery time under standardized conditions (T_J = 25°C, V_R = 64 V, di/dt = 100 A/μs), with rated dI/dt capability up to 1920 A/μs - critical for synchronous rectifier reliability in high-current, high-dI/dt applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	75 V - Maximum blocking voltage before avalanche onset; defines usable input range in 48 V bus systems.
R_DS(on) typ.	7.34 mΩ @ V_GS = 10 V, T_J = 25°C - Directly determines conduction loss in high-current paths (e.g., 80 A yields ~47 W loss).
I_D continuous	80 A @ T_C = 25°C - Thermal limit set by package and heatsinking; derates to 56 A at T_C = 100°C.
Q_g total	56 nC max - Governs gate drive power and switching speed; enables <110 ns rise time with 10 Ω driver.
E_AS	310 mJ single-pulse - Quantifies unclamped inductive switching robustness; supports reliable operation without external snubbers.
trr / Q_rr	33–50 ns / 32–48 nC - Body diode recovery metrics critical for synchronous rectifier efficiency and EMI control.
R_θJC	1.045 °C/W - Junction-to-case thermal resistance; enables precise junction temperature estimation using measured case temperature.

Pinout & Package

IRFSL3607PBF uses the industry-standard TO-220AB package with isolated tab (drain-connected), offering mechanical stability and direct heatsink mounting. Pin assignment is fixed: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Gate (Pin 1)	Control terminal	Receives 10 V logic-level signal to fully enhance channel; threshold 2.0–4.0 V ensures TTL/CMOS compatibility.
Drain (Pin 2 / Tab)	High-side power node	Electrically connected to metal tab; requires insulating washer when mounted to grounded heatsink.
Source (Pin 3)	Reference node / return path	Serves as common reference for gate drive and load current; low-inductance layout essential for dI/dt stability.

Key Features

Feature	Design Value
Enhanced avalanche ruggedness	310 mJ single-pulse E_AS with thermally limited SOA - eliminates need for external clamping in flyback/LLC primary switches.
Optimized body diode dV/dt immunity	27 V/ns rated diode recovery dv/dt - prevents spurious turn-on during commutation in synchronous rectifiers.
Low Crss/Ciss ratio	130 pF / 3070 pF = 4.2% - minimizes Miller effect, improving gate drive efficiency and reducing switching losses.
Characterized dynamic SOA	Full Safe Operating Area curves provided up to 10 ms pulse width - enables validated design margin in transient overload conditions.
Lead-free and RoHS-compliant	"PBF" suffix denotes Pb-free termination per JEDEC J-STD-609 - meets global environmental compliance requirements.

Applications

Server VRM Synchronous Rectifier

Industrial UPS Inverter Stage

Use Scenario: High-current, high-efficiency 12 V → 1 V conversion in CPU/GPU voltage regulator modules.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 300–600 kHz with tight dead-time control.

Use Value: 7.34 mΩ R_DS(on) reduces conduction loss below 10 W at 80 A, while fast trr (33 ns) minimizes reverse recovery loss.

Use Scenario: Bidirectional DC link switching in double-conversion online UPS inverters handling 3–5 kVA loads.

IC Role / Device Role / Timing Role: Hard-switched output stage MOSFET with unclamped inductive turn-off stress.

Use Value: 310 mJ E_AS and 1920 A/μs dI/dt rating ensure reliable operation during grid fault transients without snubber circuits.

Telecom DC-DC Brick

EV Onboard Charger PFC Stage

Use Scenario: Isolated 48 V input DC-DC converter for telecom base station power supplies.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology operating at 100–200 kHz.

Use Value: Coss eff. (TR) = 610 pF enables predictable ZVS transition timing; low Q_gd (16 nC) improves light-load efficiency.

Use Scenario: Boost switch in 6.6 kW OBC PFC stage interfacing 400 V battery with AC grid.

IC Role / Device Role / Timing Role: High-reliability, high-current switching element subjected to repetitive line-voltage surges.

Use Value: Fully characterized avalanche SOA and 175°C T_Jmax allow sustained operation under overvoltage events without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP80NF55-08	75 V, 80 A, R_DS(on) = 8.0 mΩ, Q_g = 105 nC, no published E_AS rating	Lacks documented avalanche SOA; higher gate charge increases driver loss and slows switching	Preferable only where cost dominates and avalanche stress is absent
IXFH80N075	75 V, 80 A, R_DS(on) = 7.5 mΩ, Q_g = 65 nC, E_AS = 280 mJ	Slightly lower E_AS and higher Q_g; TO-247 package requires larger PCB footprint	Better for high-T_J environments due to lower R_θJC (0.75 °C/W), but less compact than TO-220AB

Compared with STP80NF55-08 and IXFH80N075, IRFSL3607PBF offers the best balance of low gate charge (56 nC), high avalanche energy (310 mJ), and TO-220AB form factor - making it optimal for space-constrained, high-reliability SMPS designs requiring verified ruggedness.

Availability

IRFSL3607PBF is available at Aetrix Electronics and suitable for server VRMs, industrial UPS inverters, and telecom DC-DC bricks requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRFSL3607PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification.

This device belongs to Infineon's HEXFET Power MOSFET product line, engineered specifically for high-efficiency, high-reliability power conversion in enterprise, industrial, and infrastructure applications demanding rugged switching behavior.

FAQ

Is IRFSL3607PBF suitable for surface-mount assembly?

No - the TO-220AB package is explicitly not recommended for surface-mount applications per Infineon's datasheet note. It requires through-hole mounting with mechanical screw attachment and thermal interface to a heatsink. SMT alternatives like D2PAK variants (e.g., IRFS3607PbF) exist but differ in thermal and electrical characteristics.

What is the maximum allowable gate-source voltage?

The absolute maximum V_GS is ±20 V. Operation beyond ±20 V risks permanent gate oxide damage. For reliable 10 V enhancement, gate drive must be tightly regulated with low overshoot; a 12 V supply with active clamping or Zener limiting is recommended in production designs.

How does its body diode performance compare to Schottky alternatives?

The integrated body diode has V_SD = 1.3 V at 46 A and t_rr = 33–50 ns - higher forward drop and slower recovery than Schottky diodes, but enables monolithic synchronous rectification without discrete components. It is not intended to replace Schottkys but to provide integrated, avalanche-rated commutation capability.

Can IRFSL3607PBF operate reliably at 150°C junction temperature?

No - the maximum rated junction temperature is 175°C, but the Safe Operating Area and avalanche ratings are validated only up to 175°C starting from 25°C ambient. Continuous operation above 150°C requires rigorous thermal modeling and derating; datasheet SOA curves assume T_J ≤ 175°C and T_C ≤ 100°C.

IRFSL3607PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 75 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 9mOhm @ 46A, 10V

Vgs(th) (Max) @ Id:: 4V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 84 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3070 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 140W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-262

IRFSL3607PBF FAQ

1.How can I place an order for IRFSL3607PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFSL3607PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFSL3607PBF reliable?

The price and inventory of IRFSL3607PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFSL3607PBF is usually 5 days.

3.What payment methods are accepted for IRFSL3607PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFSL3607PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFSL3607PBF?

IRFSL3607PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFSL3607PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFSL3607PBF?

For technical support, including IRFSL3607PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFSL3607PBF requirements.

6.How does Aetrix verify that IRFSL3607PBF is sourced from the original manufacturer or authorized distributors?

All IRFSL3607PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFSL3607PBF meets industry standards.

7.What is the process for return or replacement of IRFSL3607PBF?

All IRFSL3607PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFSL3607PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFSL3607PBF part is unused and in its original packaging.

Return procedure for IRFSL3607PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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