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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFSL4010PBF

Name: IRFSL4010PBF
Brand: Infineon Technologies
SKU: IRFSL4010PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFSL4010PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IRFSL4010PBF.pdf

Description:: MOSFET N-CH 100V 180A TO262

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFSL4010PBF from Infineon Technologies (formerly International Rectifier) is a 100 V, 180 A N-channel D2PAK (TO-262) power MOSFET optimized for high-current, hard-switched SMPS and UPS systems. It features 3.9 mΩ typical R_DS(on), 143 nC total gate charge, 720 W maximum power dissipation at T_C = 25°C, and enhanced body diode dV/dt/dI/dt ruggedness for synchronous rectification in high-frequency DC-DC converters.

For engineers reviewing the IRFSL4010PBF datasheet, IRFSL4010PBF pinout, IRFSL4010PBF application, or IRFSL4010PBF equivalent, key selection criteria include its 100 V V_DSS, low 0.40 °C/W R_θJC, 106 A avalanche current rating, and validated performance in unclamped inductive switching up to 106 A with 25°C ΔT_j.

Technical Context

This MOSFET employs a planar HEXFET structure with optimized cell pitch and trench-assisted body diode design to achieve simultaneous low R_DS(on) and high dV/dt immunity (>2.5 V/ns). Its gate threshold voltage (2.0–4.0 V) and 2.0 Ω internal gate resistance support robust drive under high di/dt transients.

The device is characterized for repetitive unclamped inductive switching (UIS) with E_AS = 318 mJ at T_J = 25°C and I_AR = 106 A, using L = 0.057 mH, R_G = 25 Ω, and V_GS = 10 V - enabling reliable operation in high-energy hard-switched topologies without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Maximum blocking voltage before avalanche; supports 65 V bus designs with 1.5× safety margin
R_DS(on) typ.	3.9 mΩ at V_GS = 10 V, T_J = 25°C - Enables <1.5 W conduction loss at 106 A continuous drain current
I_D @ T_C = 25°C	180 A - Rated for PCB-mounted operation with heatsink; derates to 127 A at 100°C case temperature
Q_g max.	215 nC - Determines gate driver power requirement; requires ≥2 A peak drive for 20 ns switching transitions
R_θJC	0.40 °C/W - Enables efficient thermal path to heatsink; limits junction rise to ≤72°C at 180 W dissipation
E_AS	318 mJ - Single-pulse avalanche energy rating; validates safe operation during load dump or inductive turn-off faults
trr / Q_rr	72 ns / 210 nC at T_J = 25°C - Fast, low-charge body diode supports synchronous rectification up to 500 kHz

Pinout & Package

IRFSL4010PBF uses the D2PAK (TO-262) surface-mount package with exposed drain pad for thermal and electrical connection. The package measures 10.67 × 9.65 × 4.83 mm and is lead-free (PbF) compliant.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current-carrying terminal connected to die backside	Exposed copper pad on bottom of package; must be soldered to large PCB copper area or heatsink for thermal and electrical continuity
Source (S)	Reference node for gate drive and current return path	Internally bonded to source metallization; forms low-inductance return path for high di/dt switching currents
Gate (G)	Control electrode modulating channel conductivity	High-impedance input requiring controlled slew rate; 2.0 Ω internal R_G reduces ringing but mandates ≥2 A driver for fast edges

Key Features

Feature	Design Value
Enhanced body diode dV/dt capability	Rated >2.5 V/ns - prevents spurious turn-on during high-speed commutation in bridge configurations
Full UIS SOA characterization	Validated to 106 A, 25°C ΔT_j, 400 μs pulse - eliminates need for external avalanche protection in UPS and motor drives
C_{oss eff.} (TR) = 1112 pF	Time-related output capacitance - enables accurate prediction of turn-off delay and Miller plateau duration in hard-switched ZVS designs
Low C_iss/C_oss ratio (14.5:1)	Improves gate drive efficiency and reduces switching loss sensitivity to Miller feedback during high dv/dt transitions
Lead-free (PbF) construction	Complies with RoHS Directive 2011/65/EU - suitable for consumer, industrial, and telecom applications requiring halogen-free assembly

Applications

High-Efficiency Synchronous Rectification

Uninterruptible Power Supply (UPS)

Use Scenario: Secondary-side switching in 48 V–54 V output LLC resonant DC-DC converters for server PSUs.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diodes; driven by transformer-coupled gate signal synchronized to primary-side switching.

Use Value: Reduces conduction loss by >40% vs. 60 V Schottky, enabling >96% full-load efficiency at 2 kW output with 106 A peak current handling.

Use Scenario: Inverter stage in online double-conversion UPS delivering 3 kVA at 230 VAC output.

IC Role / Device Role / Timing Role: High-current half-bridge switch in H-bridge inverter; operated in 5–20 kHz PWM mode with dead-time control.

Use Value: Supports 180 A continuous output current with <1.2 W conduction loss per device, minimizing thermal stress during battery-backup operation.

Hard-Switched Telecom Rectifiers

Industrial Motor Drive Inverters

Use Scenario: Primary-side switch in 3.3 kW telecom rectifier operating at 100 kHz with active clamp forward topology.

IC Role / Device Role / Timing Role: Main power switch subjected to 100 V DC bus and 106 A peak current pulses with 1319 A/μs di/dt during turn-off.

Use Value: Avalanche-rated design withstands clamping transients without derating; 318 mJ E_AS ensures reliability over 10-year field life.

Use Scenario: Phase-leg switch in 7.5 kW variable-frequency drive controlling 3-phase induction motor.

IC Role / Device Role / Timing Role: 650 V bus-level switch operating at 4 kHz PWM with 127 A continuous current at 100°C case temperature.

Use Value: 0.40 °C/W R_θJC allows direct mounting to aluminum heatsink, eliminating thermal interface material and reducing system thermal resistance by 35%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW90NF10	R_DS(on) = 4.5 mΩ (typ), Q_g = 150 nC, TO-247 package, no UIS characterization published	Larger footprint and higher thermal resistance (R_θJC = 0.55 °C/W); lacks avalanche SOA curves in datasheet	Prefer when board space permits TO-247 and avalanche robustness is not required in final design validation
IXTH180N10L2	R_DS(on) = 3.6 mΩ (typ), Q_g = 240 nC, TO-247 package, specified E_AS = 420 mJ	Higher gate charge increases driver losses; larger package requires more PCB area and thermal via count	Choose when higher avalanche margin is critical and gate drive capability supports 240 nC charge

Compared with STW90NF10 and IXTH180N10L2, IRFSL4010PBF offers the lowest thermal resistance in surface-mount form factor and verified UIS performance at 106 A - making it optimal for space-constrained, high-reliability SMPS where thermal management and fault tolerance are prioritized over minimal gate charge.

Availability

IRFSL4010PBF is available at Aetrix Electronics and suitable for high-efficiency synchronous rectification, uninterruptible power supply inverters, and hard-switched telecom rectifiers requiring stable component supply across multi-year production cycles.

Supply support for IRFSL4010PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRFSL4010PBF belongs to Infineon's legacy HEXFET® power MOSFET product line, engineered specifically for high-current, high-ruggedness switching in offline SMPS, UPS, and motor control applications where avalanche reliability and thermal efficiency are critical.

FAQ

What is the maximum recommended gate voltage for IRFSL4010PBF?

The absolute maximum gate-to-source voltage is ±20 V per datasheet Absolute Maximum Ratings. Operation above +20 V risks permanent gate oxide damage; sustained operation at 10 V ensures full enhancement while maintaining safe margin against transient overshoot. Gate drive circuits must limit V_GS to ≤15 V for long-term reliability.

Can IRFSL4010PBF be used in parallel configurations?

Yes - its positive R_DS(on) temperature coefficient (0.10%/°C) enables inherent current sharing. Parallel operation requires matched gate drive impedance, symmetrical PCB layout, and individual gate resistors (≥5 Ω) to suppress oscillation. Derate total current by 15% for 2-device parallel use per AN-994 guidelines.

Is IRFSL4010PBF suitable for zero-voltage switching (ZVS) topologies?

Yes - its low C_{oss eff.} (TR) = 1112 pF and fast body diode (t_rr = 72 ns) support reliable ZVS turn-on in phase-shifted full-bridge and LLC converters. However, C_oss energy (E_oss) must be fully resonated before turn-on; minimum resonant inductance is calculated from V_bus, f_sw, and Q_oss = 757 pF × V_bus.

Does IRFSL4010PBF require a negative gate bias during off-state?

No - its V_GS(th) range (2.0–4.0 V) and low leakage (I_GSS ≤ ±100 nA) allow stable off-state operation with 0 V gate bias. Negative bias (–5 V) is unnecessary unless operating near maximum dV/dt conditions (>5 V/ns) in high-noise environments; standard 0 V to 10 V drive suffices for most SMPS applications.

IRFSL4010PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Last Time Buy

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 180A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4.7mOhm @ 106A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 215 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 9575 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 375W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-262

IRFSL4010PBF FAQ

1.How can I place an order for IRFSL4010PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFSL4010PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFSL4010PBF reliable?

The price and inventory of IRFSL4010PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFSL4010PBF is usually 5 days.

3.What payment methods are accepted for IRFSL4010PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFSL4010PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFSL4010PBF?

IRFSL4010PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFSL4010PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFSL4010PBF?

For technical support, including IRFSL4010PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFSL4010PBF requirements.

6.How does Aetrix verify that IRFSL4010PBF is sourced from the original manufacturer or authorized distributors?

All IRFSL4010PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFSL4010PBF meets industry standards.

7.What is the process for return or replacement of IRFSL4010PBF?

All IRFSL4010PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFSL4010PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFSL4010PBF part is unused and in its original packaging.

Return procedure for IRFSL4010PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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