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Infineon Technologies IRFSL4020PBF

Part No.:
IRFSL4020PBF
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-262-3 Long Leads, I2PAK, TO-262AA
Datasheet:
AetrixIRFSL4020PBF.pdf
Description:
MOSFET N-CH 200V 18A TO262
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,079

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Product details

Overview

IRFSL4020PBF from Infineon Technologies (formerly International Rectifier) is a 200 V, 52 A N-channel enhancement-mode MOSFET in TO-262 (ISOTOP) package, optimized for Class-D audio amplifier half-bridge output stages. It delivers 300 W per channel into 8 Ω, features 85 mΩ RDS(on) @ 10 V, 18 nC total gate charge, and 175 °C maximum junction temperature.

For engineers reviewing the IRFSL4020PBF datasheet, IRFSL4020PBF pinout, IRFSL4020PBF application, or IRFSL4020PBF equivalent, key selection criteria include low QRR (280–420 nC) for THD reduction, low internal gate resistance (3.2 Ω) for switching control stability, and repetitive avalanche capability for robust unclamped inductive turn-off in high-fidelity audio power stages.

Technical Context

This MOSFET employs trench-gate silicon process technology to minimize conduction and switching losses simultaneously. Its body diode exhibits 82–120 ns reverse recovery time and 280–420 nC Qrr, directly supporting low-EMI, high-efficiency Class-D operation without external snubbers.

The device integrates a monolithic source-drain diode with 1.3 V forward voltage at 11 A and supports unclamped inductive switching up to 11 A avalanche current. Thermal design leverages 1.43 °C/W RθJC and 175 °C TJ(max) for sustained high-power audio output under transient thermal loads.

Key Specifications

ParameterValue and Actual Design Meaning
VDS200 V - Supports rail voltages up to ±90 V in bridged Class-D amplifiers
RDS(on) @ 10 V85 mΩ typ. - Enables ≤0.7 W conduction loss at 52 A continuous drain current
Qg18 nC typ. - Reduces gate drive power and improves switching transition control
Qrr280–420 nC - Low reverse recovery charge minimizes THD and EMI during dead-time commutation
TJ(max)175 °C - Allows sustained operation in compact heatsinked audio amplifier enclosures
RθJC1.43 °C/W - Enables direct mounting to heatsink with predictable thermal path for thermal management
ID @ 100°C18 A - Specifies usable continuous current under real-world board-level thermal conditions

Pinout & Package

IRFSL4020PBF uses the TO-262 (ISOTOP) package: 3-pin, single-ended, through-hole, isolated tab (drain-connected). The case is electrically connected to the drain terminal and must be mounted to a heatsink with appropriate insulation if not referenced to system ground.

Pin/TerminalCircuit RoleDesign Meaning
G (Gate)Control inputReceives PWM signal; 3.2 Ω internal gate resistance damps oscillation and simplifies external gate resistor selection
D (Drain)High-side power switch nodeConnected to package tab; requires insulated mounting when used in half-bridge high-side position
S (Source)Power return / reference nodeProvides low-inductance return path; internal source inductance is 7.5 nH, critical for minimizing shoot-through risk

Key Features

FeatureDesign Value
Optimized Qsw/Qg ratio6.7 nC/18 nC = 0.37 - Enables fast, low-loss transitions while maintaining gate drive simplicity
Low Coss eff.110 pF - Reduces Miller-induced turn-on risk and eases gate driver selection in high-frequency Class-D
Repetitive avalanche rating11 A, 250 mJ - Supports reliable operation during overcurrent or inductive load transients without derating
Body diode trr82–120 ns - Matches typical Class-D dead-time windows to prevent cross-conduction and distortion

Applications

High-Fidelity Home Audio AmplifierProfessional Stage Power Amplifier

Use Scenario: 200–500 W stereo Class-D amplifier driving 4–8 Ω loudspeakers in compact chassis with forced-air or passive heatsinking.

IC Role / Device Role / Timing Role: Half-bridge output switch; handles 100–500 kHz PWM switching with precise dead-time control.

Use Value: 85 mΩ RDS(on) and low Qrr enable >92% efficiency and <0.05% THD+N at full power.

Use Scenario: 1–2 kW multi-channel touring amplifier with rail-switching architecture and real-time thermal monitoring.

IC Role / Device Role / Timing Role: High-current output stage switch; operates with 175 °C TJ(max) and repetitive avalanche margin for stage lighting and bass transients.

Use Value: 1.43 °C/W RθJC and 18 A ID@100°C support stable output under sustained 90% duty-cycle program material.

Automotive Infotainment Subwoofer ModuleStudio Monitor Reference Amplifier

Use Scenario: Compact 300 W subwoofer amplifier integrated into vehicle dashboard or trunk-mounted enclosure with limited airflow.

IC Role / Device Role / Timing Role: Low-profile TO-262 MOSFET in half-bridge configuration; switches at 300–400 kHz with minimal heatsink mass.

Use Value: TO-262 package enables mechanical robustness and thermal interface to aluminum chassis, reducing system size by 35% vs. D2Pak alternatives.

Use Scenario: Dual-mono 150 W/channel studio monitor with ultra-low-noise power supply and precision feedback topology.

IC Role / Device Role / Timing Role: Output stage switch; selected for consistent Qg and RDS(on) matching across channels to preserve stereo imaging.

Use Value: Tight RDS(on) tolerance (85–105 mΩ) and low ∆VGS(th)/∆TJ (−13 mV/°C) ensure channel balance over temperature and lifetime.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Class-D audio MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRFB4115PBF200 V, 65 A, 55 mΩ RDS(on), TO-220AB package, higher Qg (65 nC)Higher current rating but larger package footprint and slower switching due to higher gate chargePreferred where peak current >52 A is required and PCB layout allows TO-220 thermal relief
STW48N60M2600 V, 48 A, 65 mΩ, SuperMESH™2, TO-247 package, lower Qrr (180 nC)Higher voltage rating unnecessary for audio rails; larger TO-247 increases layout area and parasitic inductanceConsider only if system requires 400 V+ bus or legacy TO-247 socket compatibility

Compared with IRFB4115PBF and STW48N60M2, IRFSL4020PBF offers optimal trade-off of low RDS(on), moderate Qg, and TO-262 thermal/mechanical fit for space-constrained, high-fidelity audio amplifiers-without over-specifying voltage or sacrificing switching fidelity.

Availability

IRFSL4020PBF is available at Aetrix Electronics and suitable for high-fidelity home audio amplifiers, professional stage power amplifiers, and automotive infotainment subwoofer modules requiring stable component supply and long-term production continuity.

Supply support for IRFSL4020PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in energy-efficient power conversion and automotive electronics.

This device belongs to Infineon's "HEXFET® Digital Audio" product line, engineered specifically for high-efficiency, low-distortion Class-D audio amplifier output stages-balancing conduction loss, switching loss, and ruggedness in thermally demanding environments.

FAQ

What is the recommended gate resistor value for IRFSL4020PBF in a 300 kHz Class-D amplifier?

A 10 Ω to 22 Ω series gate resistor is recommended to damp ringing while maintaining fast turn-on/turn-off. The device's 3.2 Ω internal gate resistance reduces sensitivity to PCB trace inductance, enabling stable switching even with short gate traces and minimal external damping.

Does IRFSL4020PBF require a negative gate voltage for reliable turn-off in half-bridge configurations?

No. With a gate threshold voltage of 3.0–4.9 V and −20 V maximum VGS, a 0 V turn-off is sufficient. However, applying −5 V improves noise immunity and ensures complete depletion during high-dV/dt conditions common in half-bridge node switching.

Can IRFSL4020PBF be paralleled for higher current output in a mono amplifier?

Yes-its positive RDS(on) temperature coefficient (RDS(on) increases with temperature) enables natural current sharing. Use matched gate resistors, symmetrical PCB layout, and shared heatsink mounting to maintain thermal balance across paralleled devices.

Is the TO-262 package of IRFSL4020PBF compatible with standard TO-220 heatsinks?

No. TO-262 has a different pin pitch (2.54 mm vs. 5.4 mm), wider body, and isolated tab geometry. It requires dedicated TO-262-compatible heatsinks or custom mounting hardware; using TO-220 clips or retainers may cause mechanical stress or poor thermal contact.

IRFSL4020PBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
200 V
Current - Continuous Drain (Id) @ 25°C:
18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
105mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:
4.9V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:
29 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1200 pF @ 50 V
FET Feature:
-
Power Dissipation (Max):
100W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-262

IRFSL4020PBF FAQ

1.How can I place an order for IRFSL4020PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFSL4020PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFSL4020PBF reliable?

The price and inventory of IRFSL4020PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFSL4020PBF is usually 5 days.

3.What payment methods are accepted for IRFSL4020PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFSL4020PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFSL4020PBF?

IRFSL4020PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFSL4020PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFSL4020PBF?

For technical support, including IRFSL4020PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFSL4020PBF requirements.

6.How does Aetrix verify that IRFSL4020PBF is sourced from the original manufacturer or authorized distributors?

All IRFSL4020PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFSL4020PBF meets industry standards.

7.What is the process for return or replacement of IRFSL4020PBF?

All IRFSL4020PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFSL4020PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFSL4020PBF part is unused and in its original packaging.

Return procedure for IRFSL4020PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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