Infineon Technologies IRFSL4115PBF

Overview

IRFSL4115PBF from Infineon Technologies is a 150V, 99A (silicon-limited), N-channel enhancement-mode HEXFET Power MOSFET in TO-262 package with R_DS(on) typ. 10.3 mΩ, Q_g 77 nC, and enhanced body diode dV/dt/dI/dt capability. It serves as a high-current, hard-switched power switch in SMPS synchronous rectification, UPS output stages, and high-frequency DC-DC converters.

For engineers reviewing the IRFSL4115PBF datasheet, IRFSL4115PBF pinout, IRFSL4115PBF application, or IRFSL4115PBF equivalent, key selection criteria include its 195A package-limited pulsed current rating, 0.4°C/W junction-to-case thermal resistance, avalanche energy rating (E_AS = 375 mJ), and optimized gate charge profile for fast switching with low drive loss.

Technical Context

This MOSFET employs planar silicon-gate technology with optimized cell layout to achieve high dV/dt ruggedness (≥2.5 V/ns) and robust unclamped inductive switching performance. Its body diode features t_rr = 86 ns and Q_rr = 300 nC at T_J = 25°C, enabling reliable operation in synchronous rectifier topologies without external Schottky supplementation.

The device's dynamic parameters-including C_iss = 5270 pF, C_oss = 490 pF, and C_rss = 105 pF-support stable gate drive design in high-frequency (>100 kHz) hard-switched applications. Thermal design is enabled by its low R_θJC (0.4°C/W) and validated SOA up to 100 μs pulse width at 175°C junction temperature.

Key Specifications

Pinout & Package

IRFSL4115PBF uses the TO-262 (ISOTOP) package: 3-pin, single-ended, through-hole, with isolated metal tab (drain-connected). Mounting torque: 10 lb·in (1.1 N·m); soldering temperature: 300°C for 10 s at 1.6 mm from case.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 150 V power MOSFET applications.

Compared with STW100N150D and IXFH100N15X3, IRFSL4115PBF offers superior dV/dt immunity and lower thermal resistance in a smaller TO-262 footprint-ideal for space-constrained, high-reliability industrial power supplies where switching speed and ruggedness outweigh marginal R_DS(on) differences.

Availability

IRFSL4115PBF is available at Aetrix Electronics and suitable for server VRM output stages, industrial UPS inverters, and telecom rectifier modules requiring stable component supply and long-term production continuity.

Supply support for IRFSL4115PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability power conversion in industrial, telecom, and computing infrastructure where ruggedness, thermal performance, and consistent avalanche behavior are critical.

FAQ

What is the maximum continuous drain current for IRFSL4115PBF at 100°C case temperature?

At T_C = 100°C, the continuous drain current is 70 A (silicon-limited), as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the silicon die-not package or bond wire limits-and assumes proper heatsinking with R_θJC = 0.4°C/W maintained.

Does IRFSL4115PBF have a fully characterized safe operating area (SOA) for repetitive avalanche?

No-only single-pulse avalanche energy (E_AS) is characterized and rated at 375 mJ. Repetitive avalanche is not guaranteed; the datasheet specifies E_AR = 0 mJ, indicating that only transient fault conditions are supported. Designers must implement external clamping or current limiting to avoid cumulative junction damage.

Can IRFSL4115PBF be used in parallel configurations without current-sharing resistors?

Yes-its positive R_DS(on) temperature coefficient (see Fig. 4) ensures inherent thermal current sharing. However, matched gate drive layout (equal trace inductance/resistance) and symmetrical thermal mounting are mandatory. Parallel operation beyond two units requires individual gate resistors (≥5 Ω) to suppress oscillation.

Is the TO-262 package of IRFSL4115PBF electrically insulated from the drain terminal?

No-the metal tab is internally connected to the drain. Electrical isolation from the heatsink must be achieved using an insulating washer and shoulder washer, or ceramic pad, rated for ≥150 V working voltage and compatible with 10 lb·in mounting torque. FR-4 PCB mounting requires isolation via non-conductive thermal interface material.