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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFSL4229PBF

Name: IRFSL4229PBF
Brand: Infineon Technologies
SKU: IRFSL4229PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFSL4229PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IRFSL4229PBF.pdf

Description:: MOSFET N-CH 250V 45A TO262

Quantity:: RFQ Add To RFQ list

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Inventory:7,108

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Product details

Overview

IRFSL4229PBF from Infineon Technologies (formerly International Rectifier) is a 250 V, 91 A (T_C = 100°C), N-channel enhancement-mode HEXFET® Power MOSFET in TO-262 package, featuring 42 mΩ R_DS(on) @ V_GS = 10 V and 175°C maximum junction temperature. It delivers high repetitive peak current (300 A) and robust unclamped inductive switching capability for industrial motor drives and DC-DC converters.

For engineers reviewing the IRFSL4229PBF datasheet, IRFSL4229PBF pinout, IRFSL4229PBF application, or IRFSL4229PBF equivalent, key selection criteria include its 0.45°C/W typical junction-to-case thermal resistance, 72 nC total gate charge, avalanche-rated 300 V breakdown, fast 31 ns rise time, and body diode with 190–290 ns reverse recovery time under defined conditions.

Technical Context

This MOSFET employs advanced planar silicon process technology to achieve low specific on-resistance and high cell density. Its gate threshold voltage (3.0–5.0 V) and negative temperature coefficient of V_GS(th) (−14 mV/°C) support stable parallel operation across temperature ranges.

The device integrates an intrinsic fast-recovery body diode (V_SD ≤ 1.3 V, Q_rr = 840–1260 nC) and supports unclamped inductive switching with 33 mJ single-pulse avalanche energy at T_J = 25°C. Its SOA is limited by R_DS(on) at high V_DS, enabling reliable operation up to 100 µs pulse width in linear mode.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS Rating	250 V - Sustains 250 V drain-source blocking voltage before avalanche onset; rated for 200 V nominal bus applications with margin.
R_DS(on)	42 mΩ @ V_GS = 10 V - Enables <1 W conduction loss at 26 A continuous drain current in thermally optimized layouts.
I_D (T_C = 100°C)	91 A - Maximum continuous drain current achievable with case temperature held at 100°C using heatsink interface.
Q_g	72 nC typ. - Determines gate driver power requirement; enables ~100 kHz hard-switching with moderate gate resistance.
T_J max	175°C - Allows operation in high-ambient industrial environments without derating below full current rating.
E_AS	33 mJ - Specifies single-pulse unclamped inductive energy handling capability at T_J = 25°C, critical for flyback and H-bridge fault tolerance.
C_iss	4560 pF - Input capacitance value used in gate drive loop stability analysis and snubber design for high-frequency switching.

Pinout & Package

IRFSL4229PBF is housed in a TO-262 (I²PAK) surface-mount-compatible package with isolated tab, offering low 0.45°C/W typical junction-to-case thermal resistance. The package features three leads: Gate (G), Drain (D), and Source (S), with Drain electrically connected to the metal tab for direct heatsinking.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate control terminal	Receives 10 V logic-level signal to fully enhance channel; requires ≥72 nC charge for full turn-on.
D	Drain connection / heatsink interface	High-side switching node; electrically tied to metal tab-must be insulated from chassis unless referenced to same potential.
S	Source return path	Common reference for gate drive and load current return; internal source bond wires carry full 91 A continuous current.

Key Features

Feature	Design Value
Low Q_g for fast response	72 nC total gate charge enables sub-100 ns switching transitions with standard gate drivers, reducing switching losses.
High repetitive peak current	300 A pulsed rating supports short-circuit withstand in motor phase-legs and UPS inverters without immediate failure.
175°C operating junction temperature	Enables sustained operation in sealed enclosures or high-ambient environments without forced air cooling.
Repetitive avalanche capability	Rated for repeated unclamped inductive switching events (E_AR specified), improving system-level reliability over non-avalanche-rated MOSFETs.
Short rise/fall times	31 ns rise time and 21 ns fall time minimize overlap conduction loss during PWM transitions at 50–100 kHz.

Applications

Industrial Motor Drives

DC-DC Converters

Use Scenario: Half-bridge inverter stage for 3-phase BLDC motor control in HVAC compressors and industrial pumps.

IC Role / Device Role / Timing Role: High-side and low-side switching element in 20–40 kHz PWM-driven bridge; handles 91 A continuous phase current with body diode freewheeling.

Use Value: 42 mΩ R_DS(on) minimizes I²R losses at full load; 175°C T_J rating avoids thermal shutdown during transient overload conditions.

Use Scenario: Primary-side switch in isolated 400 V input, 12 V output LLC resonant converter for telecom power supplies.

IC Role / Device Role / Timing Role: Hard-switched or resonant-switched main power transistor; operates with ZVS at 300–500 kHz with low C_oss (390 pF).

Use Value: 72 nC Q_g reduces gate drive loss; 300 V avalanche rating tolerates voltage spikes during resonant valley switching transitions.

Uninterruptible Power Supplies

Welding Equipment

Use Scenario: Inverter output stage in online double-conversion UPS delivering 1–5 kVA sine-wave AC output.

IC Role / Device Role / Timing Role: Full-bridge switching device handling bidirectional 200 V DC bus; conducts 91 A peak during overload and battery boost modes.

Use Value: Repetitive avalanche capability absorbs line transients and inductive kickback from transformer leakage inductance without failure.

Use Scenario: Primary-side IGBT replacement in inverter-based arc welding machines with 200–300 V DC link.

IC Role / Device Role / Timing Role: High-current, high-dV/dt switching element in 10–20 kHz inverter leg; sustains 300 A pulsed current during arc ignition.

Use Value: 300 A repetitive peak current rating ensures robustness during short-duration arc strike events; TO-262 tab enables direct mounting to water-cooled heatsink.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW48N60M2	600 V V_DS, 48 A I_D, 60 mΩ R_DS(on), TO-247 package	Higher voltage rating but lower current and higher on-resistance; requires larger heatsink for same power dissipation	Select when 600 V bus voltage or higher avalanche margin is required; not suitable for 250 V systems needing >90 A continuous current.
IXFH42N30P	300 V V_DS, 42 A I_D, 65 mΩ R_DS(on), TO-247 package	Lower current rating and higher R_DS(on); lacks specified repetitive avalanche rating and 175°C T_J	Acceptable only in lower-power (<2 kW), lower-duty-cycle applications where thermal headroom is ample and fault energy is limited.

Compared with STW48N60M2 and IXFH42N30P, IRFSL4229PBF uniquely balances 250 V rating, 91 A current, 42 mΩ on-resistance, and 175°C operation in a compact TO-262 package-making it optimal for space-constrained, high-efficiency industrial power stages where thermal and avalanche robustness are co-critical.

Availability

IRFSL4229PBF is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC converters, uninterruptible power supplies, and welding equipment requiring stable component supply and long-term production continuity.

Supply support for IRFSL4229PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This device belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability switching in industrial power conversion and motor control applications demanding ruggedness and thermal resilience.

FAQ

What is the maximum continuous drain current for IRFSL4229PBF at 100°C case temperature?

The datasheet specifies 91 A continuous drain current (I_D) at T_C = 100°C with V_GS = 10 V. This rating assumes adequate heatsinking to maintain case temperature at or below 100°C and accounts for thermal derating above that point per Fig. 11. Operation beyond this limit risks exceeding 175°C junction temperature.

Does IRFSL4229PBF have a qualified avalanche rating for repetitive operation?

Yes-IRFSL4229PBF is explicitly rated for repetitive avalanche energy (E_AR) per datasheet Section "Avalanche Characteristics". While E_AS = 33 mJ is specified for single-pulse conditions, the device's construction and 175°C T_J rating support controlled repetitive avalanche events in properly designed circuits with appropriate gate drive and layout.

Can IRFSL4229PBF be driven directly from a 5 V microcontroller GPIO?

No-it cannot be fully enhanced with 5 V gate drive. Its gate threshold voltage range is 3.0–5.0 V, but R_DS(on) is specified at V_GS = 10 V (42 mΩ). At 5 V, R_DS(on) increases significantly (>150 mΩ), causing excessive conduction loss. A dedicated gate driver supplying ≥10 V is required for rated performance.

What is the thermal resistance from junction to case (R_θJC) for IRFSL4229PBF?

The typical junction-to-case thermal resistance is 0.45°C/W, measured under standard test conditions. A maximum value of 0.65°C/W is specified after 1000 thermal cycles (−55°C to +150°C) to account for die attach degradation, ensuring long-term thermal performance predictability in mission-critical applications.

IRFSL4229PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 250 V

Current - Continuous Drain (Id) @ 25°C:: 45A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 48mOhm @ 26A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 110 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 4560 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 330W (Tc)

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-262

IRFSL4229PBF FAQ

1.How can I place an order for IRFSL4229PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFSL4229PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFSL4229PBF reliable?

The price and inventory of IRFSL4229PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFSL4229PBF is usually 5 days.

3.What payment methods are accepted for IRFSL4229PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFSL4229PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFSL4229PBF?

IRFSL4229PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFSL4229PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFSL4229PBF?

For technical support, including IRFSL4229PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFSL4229PBF requirements.

6.How does Aetrix verify that IRFSL4229PBF is sourced from the original manufacturer or authorized distributors?

All IRFSL4229PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFSL4229PBF meets industry standards.

7.What is the process for return or replacement of IRFSL4229PBF?

All IRFSL4229PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFSL4229PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFSL4229PBF part is unused and in its original packaging.

Return procedure for IRFSL4229PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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