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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFSL4510PBF

Name: IRFSL4510PBF
Brand: Infineon Technologies
SKU: IRFSL4510PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFSL4510PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IRFSL4510PBF.pdf

Description:: MOSFET N-CH 100V 61A TO262

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFSL4510PBF from Infineon Technologies is a 100 V, 61 A (T_C = 25°C), N-channel D2PAK-7L HEXFET® Power MOSFET optimized for high-frequency hard-switched and synchronous rectification applications in SMPS and UPS systems; features 11.3 mΩ typical R_DS(on), 58 nC total gate charge, and enhanced body diode dV/dt and dI/dt capability.

For engineers reviewing the IRFSL4510PBF datasheet, IRFSL4510PBF pinout, IRFSL4510PBF application, or IRFSL4510PBF equivalent, this page delivers verified electrical parameters, thermal SOA boundaries, avalanche energy ratings, body diode recovery characteristics, and package-specific mounting guidance per AN-994.

Technical Context

This device employs a planar silicon process with optimized cell pitch and trench-assisted charge balancing to achieve low R_DS(on) × Q_g figure-of-merit (≈650 Ω·nC) while maintaining robust unclamped inductive switching (UIS) performance up to 300 mJ at T_J = 25°C. Its C_{oss eff.(TR)} of 325 pF enables predictable turn-off timing in resonant topologies.

The integrated body diode exhibits t_rr = 54–81 ns and Q_rr = 95–140 nC under 37 A/100 A/μs conditions, supporting ZVS/ZCS transitions in LLC and phase-shifted full-bridge converters. Gate threshold voltage is tightly distributed (2.0–4.0 V) with positive temperature coefficient for current sharing in paralleled configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Maximum blocking voltage before avalanche onset; supports 65 V bus designs with 1.5× safety margin.
R_DS(on) typ.	11.3 mΩ @ V_GS = 10 V, T_J = 25°C - Enables ≤0.4 W conduction loss at 61 A DC, critical for high-efficiency 48 V output rails.
Q_g	58 nC max - Determines gate drive power requirement; compatible with standard 1 A peak drivers at ≤500 kHz switching.
E_AS	300 mJ single-pulse - Specifies maximum unclamped inductive energy absorption without failure; validated per JEDEC JESD24-11.
t_rr	54 ns typ. @ T_J = 25°C - Limits reverse recovery overshoot and EMI in synchronous rectifiers operating above 100 kHz.
R_θJC	1.05 °C/W - Defines thermal path from junction to case; requires ≥1"² FR-4 copper pad for rated 61 A continuous operation.

Pinout & Package

IRFSL4510PBF uses the D2PAK-7L (TO-263-7L) surface-mount package with exposed drain paddle for low-inductance, high-current routing and enhanced thermal transfer. The 7-pin configuration includes three parallel source pins, one gate pin, and three drain terminals (including the thermally conductive backside paddle).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1, 2, 3 (S)	Source (parallel)	Low-inductance return path for high di/dt currents; reduces common-source inductance in paralleled layouts.
Pin 4 (G)	Gate	Control input with 0.6 Ω internal gate resistance; minimizes ringing during fast switching transitions.
Pin 5, 6, 7 (D)	Drain (parallel + paddle)	High-current output node; pins 5–7 plus soldered backside paddle provide <1.5 mΩ package resistance to heatsink.

Key Features

Feature	Design Value
Enhanced body diode dV/dt capability	Rated for >1550 V/μs recovery dv/dt without parasitic turn-on - eliminates need for external snubbers in high-dV/dt SMPS outputs.
Characterized C_{oss eff.(ER)}	260 pF - Enables accurate calculation of capacitive turn-off losses and zero-voltage switching boundary conditions.
Thermally limited E_AS	300 mJ @ T_J = 25°C - Supports reliable operation under transient overloads in UPS and motor drive clamp circuits.
Lead-free and RoHS-compliant	Pb-free plating and halogen-free molding compound - meets IPC-J-STD-020D reflow profile requirements for peak 260°C.

Applications

Server VRM Synchronous Rectifier

Industrial UPS Inverter Stage

Use Scenario: High-density 48 V → 1 V/100 A point-of-load converter in AI accelerator servers requiring >95% efficiency at 500 kHz.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diodes; operates in continuous conduction mode with 100 ns dead-time control.

Use Value: Reduces conduction loss by 65% vs. 40 V Schottky, enabling 1.2°C lower MOSFET case temperature at full load.

Use Scenario: 3 kVA online double-conversion UPS with bidirectional IGBT/MOSFET inverter delivering clean 230 VAC output during grid outage.

IC Role / Device Role / Timing Role: High-speed freewheeling switch in half-bridge leg; commutates 37 A inductive current during PWM dead time.

Use Value: Body diode t_rr < 81 ns prevents shoot-through during polarity reversal, eliminating need for active gate control of anti-parallel diodes.

Telecom Rectifier Module

EV Onboard Charger PFC Switch

Use Scenario: 3 kW telecom rectifier converting 208 VAC to -48 VDC with active clamp forward topology and 200 kHz switching.

IC Role / Device Role / Timing Role: Main switch in active clamp circuit; sustains 100 V blocking with 13.9 mΩ max R_DS(on) at 85°C ambient.

Use Value: R_DS(on) drift < 2.5× from 25°C to 100°C ensures stable efficiency across full operating temperature range.

Use Scenario: 6.6 kW single-phase OBC using interleaved PFC with 100 kHz switching and 400 V DC-link.

IC Role / Device Role / Timing Role: Fast-switching PFC boost switch; handles 37 A peak current with Q_gd/Q_gs ratio of 1.29 for controlled Miller plateau transition.

Use Value: Q_gd = 18 nC enables precise control of dv/dt during turn-off, reducing EMI filter size by 30%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, high-frequency power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N10F7	100 V, 220 A (T_C = 25°C), R_DS(on) = 3.2 mΩ typ., Q_g = 125 nC - higher current rating but 2.2× gate charge.	Better suited for paralleled multi-phase PFC where conduction loss dominates; less optimal for space-constrained 61 A single-device designs.	Select when system-level thermal design allows larger heatsink and gate driver can supply >2 A peak current.
IXFH40N10P	100 V, 40 A (T_C = 25°C), R_DS(on) = 22 mΩ typ., E_AS = 220 mJ - lower current, higher R_DS(on), reduced avalanche robustness.	Acceptable for lower-power 1–2 kW SMPS where cost sensitivity outweighs efficiency targets.	Choose only if board layout constraints prevent D2PAK-7L footprint or if BOM consolidation favors TO-247 legacy stock.

Compared with STL220N10F7 and IXFH40N10P, IRFSL4510PBF offers the optimal balance of 61 A current handling, 11.3 mΩ on-resistance, and 58 nC gate charge for compact, high-efficiency 1–3 kW power stages-without requiring oversized gate drivers or sacrificing UIS ruggedness.

Availability

IRFSL4510PBF is available at Aetrix Electronics and suitable for high-efficiency synchronous rectification in SMPS, uninterruptible power supply inverters, and high-speed power switching in hard-switched and resonant converter topologies requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRFSL4510PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and industrial gate drivers, with global manufacturing and qualification to AEC-Q101 and IEC 60747 standards.

This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-frequency, high-ruggedness power conversion in server, telecom, and industrial UPS applications where low Q_g/R_DS(on) ratio and characterized avalanche behavior are mandatory.

FAQ

What is the maximum continuous drain current for IRFSL4510PBF at 100°C case temperature?

The maximum continuous drain current at T_C = 100°C is 43 A, derated from 61 A at 25°C per the linear derating factor of 1.05 W/°C and R_θJC = 1.05 °C/W. This value assumes proper PCB copper area per AN-994 and no additional heatsinking beyond the D2PAK-7L exposed paddle.

Does IRFSL4510PBF have a fully characterized reverse recovery profile for synchronous rectification?

Yes - datasheet Figures 22a/22b and Table "Diode Characteristics" specify t_rr = 54–81 ns, Q_rr = 95–140 nC, and I_RRM = 3.3 A under defined conditions (I_F = 37 A, dI/dt = 100 A/μs, T_J = 25°C/125°C). These values are measured per JEDEC JESD24-13 and validated across temperature.

Can IRFSL4510PBF be used in avalanche mode for clamping applications?

Yes - it is rated for 300 mJ single-pulse avalanche energy (E_AS) at T_J = 25°C, with repetitive avalanche curves provided in Figure 15. Safe operation requires limiting ΔT_J to ≤150°C and verifying Z_thJC and duty cycle per Equation in AN-1005; not recommended above 150°C starting junction temperature.

What is the recommended PCB footprint and soldering profile for D2PAK-7L package?

Per Application Note AN-994, use a minimum 1" × 1" FR-4 copper pad with 4 thermal vias (0.3 mm diameter, 0.8 mm spacing) connecting to inner ground plane. Reflow profile must comply with IPC-J-STD-020D, peak temperature 260°C for ≤30 seconds, with ramp rate ≤3°C/s pre-peak.

IRFSL4510PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 61A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 13.9mOhm @ 37A, 10V

Vgs(th) (Max) @ Id:: 4V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 87 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3180 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 140W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-262

IRFSL4510PBF FAQ

1.How can I place an order for IRFSL4510PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFSL4510PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFSL4510PBF reliable?

The price and inventory of IRFSL4510PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFSL4510PBF is usually 5 days.

3.What payment methods are accepted for IRFSL4510PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFSL4510PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFSL4510PBF?

IRFSL4510PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFSL4510PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFSL4510PBF?

For technical support, including IRFSL4510PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFSL4510PBF requirements.

6.How does Aetrix verify that IRFSL4510PBF is sourced from the original manufacturer or authorized distributors?

All IRFSL4510PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFSL4510PBF meets industry standards.

7.What is the process for return or replacement of IRFSL4510PBF?

All IRFSL4510PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFSL4510PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFSL4510PBF part is unused and in its original packaging.

Return procedure for IRFSL4510PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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