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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFSL4610PBF

Name: IRFSL4610PBF
Brand: Infineon Technologies
SKU: IRFSL4610PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFSL4610PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IRFSL4610PBF.pdf

Description:: MOSFET N-CH 100V 73A TO262

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFSL4610PBF from Infineon Technologies (formerly International Rectifier) is a 100V, 73A N-channel enhancement-mode HEXFET Power MOSFET in D2Pak (TO-263) package, optimized for high-efficiency synchronous rectification and hard-switched SMPS. It features 11 mΩ typical R_DS(on), 90 nC total gate charge, and enhanced body diode dV/dt and dI/dt capability for robust unclamped inductive switching.

For engineers reviewing the IRFSL4610PBF datasheet, IRFSL4610PBF pinout, IRFSL4610PBF application, or IRFSL4610PBF equivalent, key selection criteria include avalanche energy rating (370 mJ), SOA-limited pulsed drain current (290 A), thermal resistance (R_θJA = 40 °C/W on PCB mount), and body diode reverse recovery performance (Q_rr = 44–66 nC at 25°C).

Technical Context

This MOSFET employs planar silicon-gate technology with optimized cell pitch and trench-assisted drift region to achieve low R_DS(on) × Q_g figure-of-merit (≈1.0 mΩ·nC). Its gate threshold voltage (2.0–4.0 V) enables direct drive from 3.3 V or 5 V logic controllers without level-shifting.

The integrated body diode exhibits fast reverse recovery (t_rr = 35–53 ns) and low forward voltage (V_SD ≤ 1.3 V), supporting high-frequency synchronous rectification in DC/DC converters up to 500 kHz. Avalanche ruggedness is thermally limited and characterized per JEDEC JESD24-1.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Maximum blocking voltage before avalanche onset; supports 65 V bus designs with 1.5× safety margin
R_DS(on) typ.	11 mΩ - Enables <1.5 W conduction loss at 73 A DC, critical for high-current output stages
I_D @ T_C = 25°C	73 A - Continuous current rating under heatsink-cooled conditions; defines minimum heatsink sizing
Q_g max.	140 nC - Gate drive energy requirement; determines driver IC selection and switching loss budget
E_AS	370 mJ - Single-pulse avalanche energy; allows safe operation during inductive turn-off transients in UPS and motor drives
t_rr	35–53 ns - Body diode reverse recovery time; sets minimum dead-time in synchronous buck converters
R_θJA (PCB mount)	40 °C/W - Junction-to-ambient thermal resistance on FR-4 PCB; used to calculate max ambient temperature for 175°C T_J

Pinout & Package

D2Pak (TO-263) surface-mount package with isolated tab (drain-connected), 3-pin configuration, and 1.6 mm creepage distance. Designed for high-power density layouts with thermal pad soldered to copper pour.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Low-side reference node; connects to power ground or synchronous rectifier return path
Pin 2 (Gate)	Control input (G)	High-impedance MOS gate requiring <140 nC charge; sensitive to ESD and ringing
Pin 3 (Drain)	Power output (D)	Internally connected to exposed metal tab; must be electrically isolated from heatsink unless referenced to same potential

Key Features

Feature	Design Value
Enhanced avalanche SOA	370 mJ single-pulse rating validated per JEDEC test conditions (L = 0.39 mH, I_AS = 44 A)
Optimized body diode	dV/dt capability > 1.3 V/ns and dI/dt > 660 A/µs enable reliable operation in hard-switched topologies
Lead-free construction	RoHS-compliant Pb-free plating and molding compound; compatible with lead-free reflow profiles (260°C peak)
Low C_oss eff. (TR)	380 pF effective output capacitance (time-related) reduces turn-off losses in high-frequency ZVS circuits
Thermally robust package	R_θJC = 0.77 °C/W enables >200 W dissipation with modest heatsinking in compact D2Pak footprint

Applications

Server VRM Synchronous Rectifier

Industrial UPS Inverter Stage

Use Scenario: High-current (≥60 A), 12 V input synchronous buck converter in server voltage regulator modules.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET replacing Schottky diode to reduce conduction loss and improve efficiency above 90%.

Use Value: 11 mΩ R_DS(on) cuts conduction loss by >65% vs. 40 V Schottky, enabling 1–2% full-load efficiency gain and lower thermal stress on PCB.

Use Scenario: Bidirectional DC link switch in online double-conversion uninterruptible power supply inverters.

IC Role / Device Role / Timing Role: Hard-switched 100 V bridge leg device handling 50–60 Hz PWM with high dv/dt immunity during zero-crossing transitions.

Use Value: 370 mJ avalanche rating and 660 A/µs dI/dt capability prevent failure during line surges and battery-backup mode transitions.

Telecom DC/DC Brick

EV Onboard Charger PFC Switch

Use Scenario: 48 V input, 3.3/5/12 V isolated DC/DC converter in telecom power bricks operating at 300–500 kHz.

IC Role / Device Role / Timing Role: Primary-side high-side switch in active-clamp forward or LLC resonant topology.

Use Value: 3550 pF C_iss and 150 pF C_rss support clean gate drive and predictable timing in high-frequency soft-switching control loops.

Use Scenario: Boost switch in 6.6 kW OBC PFC stage operating at 65–100 kHz with 400 V DC bus.

IC Role / Device Role / Timing Role: Fast-turning, low-loss switching element handling continuous 30 A RMS current and repetitive 100 A peak pulses.

Use Value: 90 nC Q_g enables efficient drive with standard 2 A gate drivers; 1.3 V V_SD minimizes body diode conduction loss during light-load discontinuous mode.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP110N10F7	R_DS(on) = 9.5 mΩ (lower), Q_g = 115 nC (higher), TO-220FP package	Lacks D2Pak thermal performance; R_θJA = 62 °C/W limits PCB-mounted power density	Prefer when cost-sensitive TO-220 layout exists and heatsink cooling is available
IXTH76N10L2	R_DS(on) = 10.5 mΩ, Q_g = 120 nC, TO-247 package, higher E_AS (420 mJ)	Through-hole mounting only; larger footprint but superior heatsink interface (R_θJC = 0.45 °C/W)	Prefer for industrial inverters requiring maximum avalanche margin and forced-air heatsinking

Compared with STP110N10F7 and IXTH76N10L2, IRFSL4610PBF uniquely balances surface-mount integration, 40 °C/W PCB thermal performance, and 370 mJ avalanche rating-making it optimal for space-constrained, high-reliability SMPS where D2Pak's thermal-pad soldering delivers measurable efficiency and reliability gains over through-hole alternatives.

Availability

IRFSL4610PBF is available at Aetrix Electronics and suitable for server VRMs, industrial UPS systems, telecom DC/DC bricks, and EV onboard charger PFC stages requiring stable component supply and long-term lifecycle support.

Supply support for IRFSL4610PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to Infineon's legacy HEXFET Power MOSFET product line, designed specifically for high-efficiency, high-reliability power conversion in enterprise computing, telecom infrastructure, and industrial power supplies.

FAQ

Is IRFSL4610PBF pin-compatible with IRFS4610PbF?

Yes-both share identical D2Pak (TO-263) pinout: Pin 1 = Source, Pin 2 = Gate, Pin 3 = Drain. The "L" in IRFSL4610PBF denotes D2Pak packaging, while IRFS4610PbF is the same die in TO-220AB. Electrical specs are identical; only thermal and mounting characteristics differ.

What is the maximum recommended gate drive voltage?

The absolute maximum V_GS is ±20 V, but Infineon specifies 10 V for rated R_DS(on) and SOA performance. Driving above 15 V increases gate oxide stress and does not significantly reduce R_DS(on); 10–12 V is optimal for reliability and loss trade-off.

Can IRFSL4610PBF replace IRFB4610PbF in TO-262 designs?

No-IRFB4610PbF uses TO-262 (single-ended flange) package with different mechanical footprint, thermal pad layout, and mounting hole pattern. While electrically identical, PCB redesign and thermal validation are required due to R_θJA differences (TO-262: 50 °C/W vs. D2Pak: 40 °C/W).

Does this MOSFET require a gate resistor for stability?

Yes-a series gate resistor (5–22 Ω) is mandatory to dampen parasitic oscillation caused by L_g–C_iss resonance. Layout-dependent ringing can exceed 20 V overshoot without damping; resistor value must be tuned per PCB trace inductance and driver strength.

IRFSL4610PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 73A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 14mOhm @ 44A, 10V

Vgs(th) (Max) @ Id:: 4V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 140 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3550 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 190W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-262

IRFSL4610PBF FAQ

1.How can I place an order for IRFSL4610PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFSL4610PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFSL4610PBF reliable?

The price and inventory of IRFSL4610PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFSL4610PBF is usually 5 days.

3.What payment methods are accepted for IRFSL4610PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFSL4610PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFSL4610PBF?

IRFSL4610PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFSL4610PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFSL4610PBF?

For technical support, including IRFSL4610PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFSL4610PBF requirements.

6.How does Aetrix verify that IRFSL4610PBF is sourced from the original manufacturer or authorized distributors?

All IRFSL4610PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFSL4610PBF meets industry standards.

7.What is the process for return or replacement of IRFSL4610PBF?

All IRFSL4610PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFSL4610PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFSL4610PBF part is unused and in its original packaging.

Return procedure for IRFSL4610PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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