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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFSL4710PBF

Name: IRFSL4710PBF
Brand: Infineon Technologies
SKU: IRFSL4710PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFSL4710PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IRFSL4710PBF.pdf

Description:: MOSFET N-CH 100V 75A TO262

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFSL4710PBF from Infineon Technologies is a 100V, 75A N-channel enhancement-mode HEXFET® Power MOSFET in TO-220AB package, featuring R_DS(on) = 0.014 Ω at V_GS = 10 V, 45 A, and optimized for high-efficiency switching in DC-DC converters, motor control, and UPS systems.

For engineers reviewing the IRFSL4710PBF datasheet, IRFSL4710PBF pinout, IRFSL4710PBF application, or IRFSL4710PBF equivalent, key selection criteria include its low gate charge (Q_g = 110–170 nC), fast switching (t_r = 130 ns, t_f = 38 ns), avalanche-rated ruggedness (E_AS = 190 mJ), and thermal resistance R_θJC = 0.74 °C/W.

Technical Context

This MOSFET employs planar silicon process technology with fully characterized output capacitance (C_oss = 440 pF at V_DS = 25 V) and effective C_oss = 430 pF across 0–80 V, enabling accurate snubberless flyback and resonant converter design. Its gate threshold voltage (V_GS(th) = 3.5–5.5 V) ensures reliable turn-on with standard 10 V logic-level drivers.

The device integrates a robust body diode with V_SD = 1.3 V at I_S = 45 A and reverse recovery time t_rr = 74–110 ns, supporting synchronous rectification and bidirectional power flow in half-bridge topologies without external freewheeling diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Maximum blocking voltage before avalanche; supports 48 V input bus designs with 2× safety margin.
R_DS(on) max	0.014 Ω - Measured at V_GS = 10 V, I_D = 45 A; enables ≤6.3 W conduction loss at 75 A continuous.
I_D @ T_C = 25°C	75 A - Continuous drain current rating under ideal heatsink conditions; defines maximum steady-state power handling.
Q_g	110–170 nC - Total gate charge determines driver strength requirement; 150 nC typical drives 10 V swing in <1 µs with 10 Ω gate resistor.
t_r/t_f	130/38 ns - Rise/fall times measured at V_DD = 50 V, I_D = 45 A, R_G = 4.5 Ω; sets practical hard-switching frequency limit near 500 kHz.
E_AS	190 mJ - Single-pulse avalanche energy rating; allows safe operation during inductive load turn-off transients without clamping.
R_θJC	0.74 °C/W - Junction-to-case thermal resistance; enables direct mounting to heatsink with predictable temperature rise under full load.

Pinout & Package

IRFSL4710PBF uses the TO-220AB package: insulated tab, 3-pin vertical lead frame with drain connected to both pins 2 and 4 for enhanced current sharing and thermal path redundancy.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	High-impedance input requiring ≤170 nC charge to switch; sensitive to ESD; must be driven with low-inductance path.
2 (Drain)	Main power output terminal	Connected internally to die drain metallization; shares current path with pin 4; primary heat conduction path to heatsink via tab.
3 (Source)	Reference node / return path	Common source for gate drive reference and load return; low-inductance layout critical for minimizing shoot-through risk.
4 (Drain)	Secondary drain connection	Redundant drain terminal providing parallel current path and improved thermal coupling to heatsink; electrically identical to pin 2.

Key Features

Feature	Design Value
Low gate-to-drain charge (Q_gd)	40 nC - Reduces Miller-induced switching delay and improves controllability during dV/dt transitions.
Fully characterized C_oss and C_rss	C_oss = 440 pF, C_rss = 250 pF at V_DS = 25 V - Enables precise soft-switching timing and zero-voltage switching (ZVS) design.
Avalanche-rated ruggedness	E_AS = 190 mJ, I_AR = 45 A - Eliminates need for external avalanche protection in inductive switching applications.
Lead-free construction	RoHS-compliant Pb-free plating per JEDEC J-STD-609 - Supports environmentally compliant manufacturing without solderability compromise.
Body diode with low V_SD	V_SD = 1.3 V at I_S = 45 A - Minimizes conduction loss during freewheeling; supports bidirectional current in H-bridge configurations.

Applications

High-Frequency DC-DC Converters

Motor Control (BLDC & Stepper)

Use Scenario: Primary switch in 300–500 kHz isolated forward or LLC resonant converters powering telecom and server PSUs.

IC Role / Device Role / Timing Role: High-side main switch handling 75 A peak currents with minimal conduction and switching losses.

Use Value: Low R_DS(on) and Q_g reduce total power loss by ≥18% vs. comparable 100 V MOSFETs, improving efficiency above 94% at full load.

Use Scenario: Half-bridge leg in 24–48 V brushless DC motor drives for industrial automation and robotics.

IC Role / Device Role / Timing Role: Synchronous switching element controlling phase current direction and magnitude with PWM duty cycle.

Use Value: Fast t_r/t_f and low C_oss enable clean commutation at 20 kHz PWM, reducing audible noise and torque ripple.

Uninterruptible Power Supplies (UPS)

Industrial Inverters (Solar & Grid-Tie)

Use Scenario: Output inverter stage in line-interactive UPS delivering 1–3 kVA backup power with sine-wave output.

IC Role / Device Role / Timing Role: Bidirectional switching device managing battery-to-AC conversion and grid synchronization.

Use Value: Avalanche rating and robust body diode allow safe operation during grid fault transients and battery reversal events.

Use Scenario: DC-link switching stage in string inverters converting PV array output to 230 V AC grid interface.

IC Role / Device Role / Timing Role: High-current, high-reliability switching element in H-bridge topology handling 50–100 A DC input.

Use Value: R_θJC = 0.74 °C/W and 175 °C max T_J support sustained operation at 75 A with passive heatsinking in outdoor enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP75NF10	R_DS(on) = 0.015 Ω, Q_g = 160 nC, TO-220 package, no redundant drain pin	Higher gate charge increases driver loss; lacks pin 4 for dual-drain thermal path	Acceptable where board space limits multi-pin layouts and thermal margin permits 0.001 Ω R_DS(on) increase.
IXTH75N10L2	R_DS(on) = 0.012 Ω, Q_g = 145 nC, TO-247 package, logic-level (V_GS(th) = 2–4 V)	Lower V_GS(th) enables 5 V drive but reduces noise immunity; larger package requires more PCB area	Preferred when 5 V microcontroller drive is mandatory and heatsink footprint allows TO-247 mounting.

Compared with STP75NF10 and IXTH75N10L2, IRFSL4710PBF uniquely combines dual-drain thermal redundancy, industry-standard 10 V gate drive compatibility, and tightly specified C_oss for ZVS design-making it optimal for space-constrained, thermally demanding 100 V switching applications.

Availability

IRFSL4710PBF is available at Aetrix Electronics and suitable for high-frequency DC-DC converters, motor control systems, and uninterruptible power supplies requiring stable component supply and long-term industrial availability.

Supply support for IRFSL4710PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949 and ISO 14001.

The IRFSL4710PBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in industrial power conversion and motor drive applications up to 175 °C junction temperature.

FAQ

What is the maximum continuous drain current for IRFSL4710PBF at 100°C case temperature?

The maximum continuous drain current is 53 A at T_C = 100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220AB package and must be applied when heatsink temperature exceeds 25°C ambient. Designers should verify junction temperature using R_θJC = 0.74 °C/W and actual power dissipation.

Does IRFSL4710PBF have a built-in body diode, and what are its key parameters?

Yes, IRFSL4710PBF integrates a monolithic body diode with V_SD = 1.3 V at I_S = 45 A and T_J = 25°C, reverse recovery time t_rr = 74–110 ns, and Q_rr = 180–260 nC. These values are measured under standardized di/dt = 100 A/µs conditions and support use in freewheeling and synchronous rectification roles without external diodes.

Can IRFSL4710PBF be driven directly by a 3.3 V microcontroller GPIO pin?

No - its gate threshold voltage range is 3.5–5.5 V, and full enhancement requires V_GS ≥ 10 V for R_DS(on) = 0.014 Ω. A 3.3 V signal cannot reliably turn the device on; a gate driver IC (e.g., IR2110 or TC4420) or level-shifting circuit is required to deliver ≥10 V with sufficient peak current (>1 A) for fast switching.

What is the significance of the "PbF" suffix in IRFSL4710PBF?

The "PbF" suffix indicates lead-free (Pb-free) construction per RoHS Directive 2011/65/EU, with matte tin plating on leads and compliant internal materials. It does not affect electrical performance but mandates reflow profile adjustments (peak temperature ≤ 260°C for 10 s) and prohibits use of lead-based solder pastes in assembly.

IRFSL4710PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 14mOhm @ 45A, 10V

Vgs(th) (Max) @ Id:: 5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 170 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6160 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 200W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-262

IRFSL4710PBF FAQ

1.How can I place an order for IRFSL4710PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFSL4710PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFSL4710PBF reliable?

The price and inventory of IRFSL4710PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFSL4710PBF is usually 5 days.

3.What payment methods are accepted for IRFSL4710PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFSL4710PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFSL4710PBF?

IRFSL4710PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFSL4710PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFSL4710PBF?

For technical support, including IRFSL4710PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFSL4710PBF requirements.

6.How does Aetrix verify that IRFSL4710PBF is sourced from the original manufacturer or authorized distributors?

All IRFSL4710PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFSL4710PBF meets industry standards.

7.What is the process for return or replacement of IRFSL4710PBF?

All IRFSL4710PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFSL4710PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFSL4710PBF part is unused and in its original packaging.

Return procedure for IRFSL4710PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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